Ge-Source Based L-Shaped Tunnel Field Effect Transistor for Low Power Switching Application

Silicon - In this work, the performance of the heterojunction L-Tunnel Field Effect Transistor (LTFET) has been analyzed with different engineering techniques such as bandgap engineering, pocket...     

Recent Study on Schottky Tunnel Field Effect Transistor for Biosensing Applications

Silicon - In this review, we discussed highly sensitive biosensor devices which is having a more attractive, wide scope and development in the sensing field. Biosensor devices can detect the...     

Segmented Drain Engineered Tunnel Field Effect Transistor for Suppression of Ambipolarity

Silicon - In this paper, a new Si0.6Ge0.4/Si heterostructure tunneling field-effect transistor with segmented drain (SiGe/Si SD TFET) is proposed and simulated by Silvaco ATLAS simulator. The drain...     

Low Power Circuit and System Design Hierarchy and Thermal Reliability of Tunnel Field Effect Transistor

Silicon - Tunnel FET is one of the promising devices advocated as a replacement of conventional MOSFET to be used for low power applications. Temperature is an important factor affecting the...     

Performance and Analysis of Stack Junctionless Tunnel Field Effect Transistor

Silicon - To overcome the fabrication complexity and achieve a better switching ratio is a major grave concern for applications in semiconductor devices. In this regards, a novel stack gate-oxide...     

Silicon-On-Nothing Electrostatically Doped Junctionless Tunnel Field Effect Transistor (SON-ED-JLTFET): A Short Channel Effect Resilient Design

Silicon - This work investigates the novel device structure, silicon-on-nothing electrostatically doped junctionless tunnel field effect transistor (SON-ED-JLTFET) with high-K stacked hetero-gate...     

Parametric Investigation and Design of Junctionless Nanowire Tunnel Field Effect Transistor

Silicon - An integrated design based on Gate-All-Around (GAA) silicon Junctionless (JL) vertical profile Nanowire (NW) structure has been proposed for JL-NW-Tunnel-Field Effect Transistor...     

Effect of Temperature on Reliability Issues of Ferroelectric Dopant Segregated Schottky Barrier Tunnel Field Effect Transistor (Fe DS-SBTFET)

This paper addresses reliability issues associated with temperature of Ferroelectric Dopant Segregated Schottky Barrier Tunnel Field Effect Transistor (Fe DS-SBTFET). The simulated results are compared with Dopant Segregated Schottky Barrier TFET (DS-SBTFET). This is achieved by varying the operating temperature from 300 to 500 K. DC parameters such as I_ON/I_OFF ratio, drain current characteristics and subthreshold swing (SS) for a range of temperature have been highlighted. Moreover, the influence of temperature on various RF figure of merits such as gate capacitance (C_GG), intrinsic delay, cutoff frequency (f_T) etc. have been investigated. The device linearity has been analyzed by considering the effect of temperature variation on linearity parameters like g_m2, g_m3, 1-dB compression point, VIP₂, VIP₃ and IIP₃. The device characteristics get upgraded by the increase in cut-off frequency and reduction in intrinsic delay at elevated temperature.

     

Junctionless Silicon Nanotube Tunnel Field Effect Transistor Based Resistive Temperature Detector

Silicon - A Junctionless Nanotube Tunnel Field Effect Transistor (JL-SiNT TFET) with platinum source and the aluminium gate electrode to enable band-to-band tunneling is proposed in this paper for...     

A Novel Self-Aligned Dopingless Symmetric Tunnel Field Effect Transistor (DL-STFET): A Process Variations Tolerant Design

Silicon - This work reports a novel device structure, dopingless heterojunction symmetric tunnel field effect transistor (DL-STFET), based on the work-function engineering. For realizing dopingless...     

Suppression of Ambipolar Behavior and Simultaneous Improvement in RF Performance of Gate-Overlap Tunnel Field Effect Transistor (GOTFET) Devices

Silicon - This paper investigates a method to suppress the ambipolar current Iamb effectively, enhance the device performance with higher on current Ion, lower off current Ioff, lower inverse...     

Metal Drain Double-Gate Tunnel Field Effect Transistor with Underlap: Design and Simulation

Silicon - In this paper, we propose and simulate a novel double gate tunnel field effect transistor (DG-TFET) employing a metallic drain and a gate-drain underlap. The use of a metallic drain and...     

MUX-DEMUX using a Spatial Wave-Function Switched Field Effect Transistor (SWSFET)

A spatial wave-function switched field effect transistor (SWSFET) conducts through different channels within its structure. The switching of charge carriers between different channels can be controlled by the gate voltage. The self-consistent Schrodinger and Poisson equation solution can explain the switching of charge population in different channels of a SWSFET. A circuit model is developed by modifying the BSIM 3.2.2 IGFET (Insulated Gate Field Effect Transistor) model. Different circuits can be designed for a SWSFET with less circuit elements than conventional CMOS. The innovative circuit design using the SWSFET can make only electrons participate in the circuit operation with better performance. This work discusses the design of an ultrafast 3-in-1 multiplexer and 1-to-3 demultiplexer using the SWSFET where only one SWSFET is used to design the circuit.     

Performance Evaluation of Transition Metal Dichalcogenides Based Steep Subthreshold Slope Tunnel Field Effect Transistor

Silicon - In this paper, Transition Metal Dichalcogenides (TMDC) material based Tunnel Field Effect Transistor (TFET) has been studied by including coverage of a wide range of characteristics....     

Ground Plane Electrostatically Doped Junctionless Tunnel Field Effect Transistor: Process Immune Design for Suppressed Ambipolarity

Silicon - The incorporation of a highly doped Si layer below the Si film, termed as the ground plane, in the electrostatically doped junctionless tunnel field effect transistor (ED-JLTFET) with...     

Core-Shell Nanowire Junctionless Accumalation Mode Field-Effect Transistor (CSN-JAM-FET) for High Frequency Applications - Analytical Study

Silicon - Here, an analytical model has been proposed for Core-Shell-Nanowire-Junctionless-Accumulation-Mode- Field-Effect Transistor (CSN-JAM-FET) for High Frequency Applications. CSN-JAM-FET has...     

Charge Plasma Based Vertical Nanowire Tunnel Field Effect Transistor: Design and Sensitivity Analysis for Biosensing Application

Silicon - The device Dopingless Vertical Nanowire Tunnel Field Effect Transistor is simulated as a biosensor in this paper. The technique used is Charge Plasma for general doping in this device....     

Performance Analysis of Charge Plasma Based Five Layered Black Phosphorus-Silicon Heterostructure Tunnel Field Effect Transistor

Silicon - In this paper, five layered Black Phosphorus (BP) – Silicon (Si) based Tunnel Field Effect Transistor (TFET) is used to overcome the thermionic limits faced by Metal Oxide...     

Deep Insight into the Noise Behavior of SiGe Source Based Epitaxial Layer Tunnel Field Effect Transistor

Silicon - A detailed simulation-based investigation on the noise behavior of SiGe source-based Epitaxial layer Tunnel field effect transistor (SiGe source ETLTFET) and Silicon Synthetic Electric...     

Design and Analog Performance Analysis of Charge-Plasma Based Cylindrical GAA Silicon Nanowire Tunnel Field Effect Transistor

Silicon - Due to the rigorous practice of scaling down the device technology, certain factors such as proper electrostatic controlling of the channel, dopingless substrate, and low thermal budget...