Nanocell logic gates for molecular computing

Molecular electronics seeks to build electrical devices to implement computation - logic and memory - using individual or small collections of molecules. These devices have the potential to reduce device size and fabrication costs, by several orders of magnitude, relative to conventional CMOS. However, the construction of a practical molecular computer will require the molecular switches and their related interconnect technologies to behave as large-scale diverse logic, with input/output wires scaled to molecular dimensions. It is unclear whether it is necessary or even. possible to control the precise regular placement and interconnection of these diminutive molecular systems. This paper describes genetic algorithm-based simulations of molecular device structures in a nanocell where placement and connectivity of the internal molecular switches are not specifically directed and the internal topology is generally disordered. With some simplifying assumptions, these results show that it is possible to use easily fabricated nanocells as logic devices by setting the internal molecular switch states after the topological molecular assembly is complete. Simulated logic devices include an inverter, a NAND gate, an XOR gate and a 1-bit adder. Issues of defect and fault tolerance are addressed.     

Silver and proton driven fluorescent multiple-mode molecular logic gates employing phthalocyanines

Spectral properties and switch behavior of two alkyl thia units bearing Zn (II) phthalocyanine derivatives (Pc-A and Pc-B) were investigated in solvents and in solid matrix of ethyl cellulose by means of absorption and emission spectroscopy. Fluorescence lifetime and fluorescence quantum yield values of the Zn (II) phthalocyanines were calculated. The employed phthalocyanines demonstrated multiple molecular logic gate functions operated by H⁺ and Ag⁺ ions as chemical inputs. The silver driven fluorescence modulation of the Pc-A arises from reversible variations in emission signal intensity at 717 nm. The Pc-B exhibited a similar decreasing emission response to proton and silver ions and an accompanying increasing peak yielding an isobestic point at 746 nm upon protonation. The phthalocyanine doped thin films selectively responded to silver ions in sub-nano and/or pico molar levels. Observed detection limits were 7.6 × 10⁻¹² and 2.3 × 10⁻¹¹ M for Pc-A and Pc-B, respectively. In immobilized phases the attained reversible relative signal changes of Pc-A and Pc-B were 82 and 90%, respectively.     

Polymetallated porphyrin ultrathin films as transducing elements for molecular devices and logic gates

Meso-tetrapyridylporphyrins peripherally coordinated to four ruthenium complexes, such as [Ru(bpy)2Cl] and [Ru(5-ClPhen)2Cl] (bpy = 2,2'-bipyridine; Phen = 1,10-phenanthroline), provide a versatile class of molecular materials in which the complexes act as co-factors, inducing electronic effects and acting as electron-transfer relays and electron pools or sinks, depending upon their oxidation state. These cationic porphyrins can be assembled into thin films by conventional methods, or into organized layer-by-layer structures by combining with negatively charged tetrasulfonated porphyrins or phthalocyanines. Their electrocatalytic and photoelectrochemical properties have been successfully exploited in chemical sensors. Their usefulness in molecular logic gates are being demonstrated by using modified transparent conducting electrodes in miniaturized flow injection cells. In such designs, the chemical, electrochemical, and light inputs can be readily combined to perform the basic logic functions, such as AND, OR, and NOT, for molecular computing.     

All-optical logic gates based on photoinduced anisotropy of bacteriorhodopsin film

All-optical logic gates based on photoinduced anisotropy of bacteriorhodopsin (BR) film are proposed. The photoinduced anisotropy in BR film, which arises from the selective absorption of BR molecules to polarized light, can be controlled by changing the amplitudes and polarizations of exiting beams. As a consequence, the polarization of the probe light passing through the BR film can be controlled by the polarization of the exiting beam. Based on this property, a novel scheme of all-optical logic gates, such as AND, OR, XOR and NOT, has been implemented via the pump-probe technique. A theoretical model for the all-optical logic gates is proposed, and the theoretical predictions are demonstrated with the experimental results.     

Theoretical investigation of phase-based all-optical logic gates based on AlGaAs microring resonators

We propose and numerically verify a phase-based all-optical logic gates (AND, OR, XOR, NOT, NAND, NOR and XNOR, i.e. all seven basic logic gates) operation scheme based on cascaded AlGaAs microring resonators. The logic function realization is supported by the signal light phase change and extraction, the phase control in this scheme depending on cross phase modulation (XPM) in the AlGaAs microring. By inputting a non-return zero (NRZ) intensity signal as pump light, the probe light (continuous-wave, CW) will experience different phase shift and then a phase-based logical function can be obtained in this process. By choosing different pump power level, reference phase and the output port of a Mach–Zehnder interferometer (MZI), all seven basic logic operations can be realized by using the same device. The modulation depth, bandwidth and minimum power requirement of this scheme have also been discussed in detail.     

Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations

High performance NOT, NAND and NOR logic gates composed of GaAs-nanowire (NW)-based metal-semiconductor field-effect transistors (MESFETs) were constructed on flexible plastics through a noble top-down route. The representative GaAs-NW-based MESFETs exhibited superior electrical characteristics such as a high mobility (～3300 cm(2) V(-) s(-1)), large I(on)/I(off) ratio (～10(8)) and small subthreshold swing (～70 mV/dec). The NOT, NAND and NOR logic gates showed a maximum voltage gain of 108 and logic swings of 97-99%. All of the logic gates successfully retained their electrical characteristics during 2000 bending cycles. Furthermore, the logic gates were well operated by square-wave signals of up to 100 MHz under various strain conditions. The high performances demonstrated in this study open the way to the realization of high speed flexible logic devices.     

Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates

In this paper, we propose a novel construction of silicon nanowire (SiNW) negative-AND (NAND) logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating with a supply voltage as low as 0.8 V, with switching and standby power consumption of approximately 1.1 and 0.068 nW, respectively. Superior electrical characteristics of each SiNW transistor, including steep subthreshold slopes, high I _on/off ratio, and symmetrical threshold voltages, are the major factors that enable nanowatt-range power operation of the logic gates. Moreover, the mechanical bendability of the logic gates indicates that they have good and stable fatigue properties.

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An integration of all refractory Josephson logic LSI circuit

An integration process for the fabrication of an all refractory Josephson LSI logic circuit is described. In this process, niobium nitride and niobium double-layered Josephson junctions were integrated using a reactive ion etching with a 2.5 μm minimum feature. A highly selective and anisotropic RIE process and a planarizing technology have been developed for intagrating a circuit with LSI complexity. For evaluating the process capability, test vehicle circuits with MSI/LSI level complexity have been designed and fabricated using this process. An 8 bit ripple carry adder and a 4×4 bit parallel multiplier have been integrated with Josephson four junction logic ( 4JL ) gates, the largest of which contains more than 2800 Josephson junctions. Both functionality and high-speed performance testings have been successfully performed with these test circuits.     

Theoretical investigation of phase-based all-optical NOT,XOR and XNOR logic gates based on AlGaAs microring resonators

We propose and numerically verify a phase-based all-optical logic gate (NOT, XOR and XNOR) operation scheme based on cascaded AlGaAs microring resonators. Phase control in this scheme depends on cross-phase modulation in the AlGaAs microring. The realization of NOT logic depends on the π phase shift of light transmission, and this π phase shift can be naturally obtained in microring resonators in the under-coupled state. Inputting a non-return zero intensity signal as pump light, the probe light (continuous wave) will experience a different phase shift and a phase-based logical function can be realized in this process. The bandwidth and the minimum power requirement of this scheme are also discussed in detail.     

Computational lateral flow biosensor for proteins and small molecules: a new class of strip logic gates

The first example of strip logic gates ("OR" and "AND" functions) for proteins and small molecules has been constructed on the basis of target-induced self-assembly of split aptamer fragments. Using thrombin and ATP as inputs, the corresponding split/integrated aptamers as molecular recognition elements, and gold nanoparticles as a tracer, the output signals can be directly visualized by observing the red bands on the test zones of the strips. The assay is simple, easy to perform, and cost-effective, allowing portable analysis at ambient temperature. The strip logic system is resistant to nonspecific interfering agents and can operate effectively even in human serum samples. Such logic strips hold great promise for application in intelligent point-of-care and in-field diagnostics.     

Microstructural modelling of dynamic recrystallisation using an extended cellular automaton approach

Dynamic recrystallisation (DRX) governs the plastic flow behaviour and the final microstructure of many crystalline materials during thermomechanical processing. Understanding the recrystallisation process is the key to linking dislocation activities at the mesoscopic scale to mechanical properties at the macroscopic scale. A modelling methodology coupling fundamental metallurgical principles with the cellular automaton (CA) technique is here derived to simulate the dynamic recrystallisation process. Experimental findings of a titanium alloy are considered for comparison with theory. The model takes into account practical experimental parameters and predicts the nucleation and the growth kinetics of dynamically recrystallised grains. Hence it can simulate different stages of microstructural evolution during thermomechanical processing. The effects of hot working temperature and strain rate on microstructure were studied, and the results compared with experimental findings.     

Microfabrication and integration of diazonium-based aromatic molecular junctions

Microfabrication techniques common in commercial semiconductor manufacturing were used to produce carbon/nitroazobenzene/Cu/Au molecular junctions with a range of areas from 3×3 to 400×400 μm, starting with 100-mm-diameter silicon wafers. The approach exhibited high yield (90-100%) and excellent reproducibility of the current density (relative standard deviation of typically 15%) and 32 devices on a chip. Electron-beam-deposited carbon films are introduced as substrates and may be applied at the full wafer level before dicing and electrochemical deposition of the molecular layer. The current scaled with the device area over a factor of >600, and the current density was quantitatively consistent with structurally similar molecular junctions made by other techniques. The current densities were weakly dependent on temperature over the range of 100-390 K, and maximum current densities above 400 A/cm2 were observed without breakdown. To simulate processing and operation conditions, the junction stability was tested at elevated temperatures. The JV curves of microfabricated junctions were unchanged after 22 h at 100 °C. A ～50% increase in the current density was observed after 20 h at 150 °C but then remained constant for an additional 24 h. Parallel fabrication, thermal stability, and high yield are required for practical applications of molecular electronics, and the reported results provide important steps toward integration of molecular electronic devices with commercial processes and devices.     

化学镀铜在超大规模集成电路中的应用和发展

随着集成电路的特征尺寸减小至深亚微米以下,互连延迟成为集成电路性能进一步提高的主要障碍.为解决互连延迟带来的危机,国际上已开发出以铜为互连材料,大马士革工艺为制造方法的铜互连工艺以取代亚微米时代的铝互连工艺.本文介绍了大马士革工艺中铜金属化以及阻挡层的研究现状.     

Network integration and graph analysis in mammalian molecular systems biology

Abstraction of intracellular biomolecular interactions into networks is useful for data integration and graph analysis. Network analysis tools facilitate predictions of novel functions for proteins, prediction of functional interactions and identification of intracellular modules. These efforts are linked with drug and phenotype data to accelerate drug-target and biomarker discovery. This review highlights the currently available varieties of mammalian biomolecular networks, and surveys methods and tools to construct, compare, integrate, visualise and analyse such networks.     

Fabrication of nanosized molecular array device and logic gate using dimethyl-phenylethynyl thiol

We fabricated an array of molecular devices with a simple vertical metal-molecule-metal (MMM) junction. The nano via holes are formed in SiNx or SiO2 layer by RIE to contain the molecules inside. Finally, the top Ti/Au contact has been deposited by e-beam evaporation with cooling stage. By using self-assembly process, the organic molecules dissolved in dry and oxygen-free THF are inserted to the nanopore array device for 24 hours. We used the newly synthesized compound 4-[4-(3,5-Dimethyl-phenylethynyl)-3-nitro-phenylethynyl]-benzenethiol (DN), which is designed for adding two methyl groups at 3,5 position of phenylethynyl group of Tour's compound (4-(2-Nitro-4-phenylethynyl-phenylethyyl)-benzenethiol). The molecular devices produced the diode-like I-V characteristics and were implemented to logic gate with 3 x 3 array devices containing the DN molecule.     

A performance study of an all-optical logic gate based in PAM-ASK

In this paper a numerical study of an all-optical logical gate based in a symmetric nonlinear directional coupler (NLDC) operating with two ultrashort fundamental soliton pulses of 2ps, modulated by PAM-ASK with binary amplitude modulation to represent the logical level 1 and 0, is presented. The performance of a symmetric dual core NLDC performing two-input logical functions is examined. Initially, we evaluate the effect resulting from an increment in the PAM coding parameter offset (?), considering the anomalous Group Velocity Dispersion (GVD), nonlinear Self Phase Modulation (SPM) in a lossless configuration. We can conclude that is possible to get logical operations for the cores 1 or 2 since a phase control exists which is applied to the input pulse in fiber 1.     

On conversion from an energy scale to a depth scale in channelling experiments

We have studied the problem of determining the appropriate value of the stopping power to be used in obtaining depth information from back-scattering measurements using the channelling effect technique, by observing the energy spectra of 0.2 and 0.4 MeV protons transmitted through thin (1 μm) silicon crystals. The transmitted particles were detected and energy analyzed with an electrostatic analyzer at scattering angles of 0°, 10° and 15°. We conclude that the stopping power to be used in dechannelling experiments and localization studies of substitutional impurities should be the random stopping power. In the case of a buried damage layer the appropriate stopping power is that derived from the most probable energy loss of the channelled protons. We propose that the results of these experiments can be generalized to channelling effect measurements at other energies and with different projectiles and targets.     

Multilevel redox heterogeneity in polyaniline films: from molecular to macroscopic scale

The derivative voltabsorptoammetry, XPS, AFM and optical microscopy reveal the redox heterogeneity in thin polyaniline (PAn) films. The autocatalytic character of the oxidation processes results in the formation of the heterogeneous structures in PAn at various scales from molecular to macroscopic.