Polarization Switching in (100)/(001) Oriented Epitaxial Pb(Zr, Ti)O3 Thin Films

Thin films made of (100)/(001)-oriented Pb(Zr, Ti)O₃ (PZT) were deposited by liquid-delivery metal-organic chemical vapor deposition on Ir/MgAl₂O₄/SiO₂/Si(100) substrates. For comparison, PZT thin films were also deposited on Ir/MgO(100) substrates. The X-ray scan spectra for the (202) reflections revealed that the PZT films have four-fold symmetry. It indicates that the PZT films were epitaxially grown as a cube-on-cube structure on both substrates. The switchable polarization (Q_sw) of the PZT capacitors on the silicon substrate was only 23 C/cm² at 1.8 V; however, Q_sw of PZT capacitors on MgO was 99 C/cm². In the case of PZT films deposited on silicon, the volume fraction of (001)-oriented domains (which contribute to polarization switching) was 15.1% (calculated from an XRD pattern). This result is due to the lower Q_sw of PZT capacitors on silicon. By piezoresponse-force microscopy, switchable and unswitchable domains could be identified by imaging color contrast, namely, (001) and (100) domains, respectively. Consequently, domain distribution of the PZT film on a silicon substrate indicates that the (001) domain exists in the (100) domain matrix.     

Fabrication of PZT Thick Films on Silicon Substrates for Piezoelectric Actuator

In recent years, there has been an increased interest in ferroelectric lead zirconate titanate (PZT) films for applications in piezoelectric devices. Many potential applications require a film thickness of about 10 m for higher force, better sensitivity and stability. In this study we fabricate lead zirconate titanate (PZT) thick films by screen printing on silicon substrates with a platinum bottom electrode. Various substrates were studied. The longitudinal piezoelectric coefficient, d₃₃, was measured by the normal load testing method. Breakdown voltage, tan , P-E hysteresis loop and permittivity were measured on the PZT thick films. The results are promising for the use of PZT thick films in various applications, for example, in silicon micromachined micro-pump.     

Grenzen von MOS-Speicherzellen

Übersicht Das Verhalten von MOS-Feldeffekt-Transistoren mit Kanallängen im Submikrometer-Bereich wird anhand verschiedener Kurzkanaleffekte beschreibender Modelle untersucht. Neben den klassischen Begrenzungen der Kanallänge, gegeben durch Durchgriff, Durchbruch und heißen Elektronen, wird eine weitere Grenze aufgezeigt, die von der Empfindlichkeit der betrachteten Schaltung bezüglich Änderungen der Schwellspannung bestimmt wird. Die Schwellspannung ist stark von der Kanallänge abhängig. MOS-Transistoren mit Flächen von etwa 0,06 m² bei Betriebsspannungen von 1 V scheinen möglich und erlauben Speicherzellen von minimal 0,1 m² (dynamisch) bzw. 1,1 m² bei statischem Betrieb mit 6 Transistoren. Auf Grund wesentlich besserer Transistoreigenschaften erscheint der Betrieb solcher hochintegrierten MOS-Schaltungen bei tiefen Temperaturen günstig.

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Limitations of MOS-memory cells

Contents The behaviour of MOS Field-Effect-Transistors with submicrometer channel lengths is investigated with the aid of different models describing short-channel-effects. Beyond classical limitations of the channel length determined by punchthrough, breakdown and hot electrons a further limit is shown resulting of the threshold voltage sensitivity of the circuit. The threshold voltage depends strongly on the channel length. MOSFETs of an area of 0.06 m² with supply voltages of 1 V seem possible, permitting the design of memory cells with a minimum cell area of 0.1 m² (dynamic) respectively 1.1 m² for a static 6-device cell. Because of the improved characteristics of the transistors low temperature operation of such highly integrated MOS-circuits seems favourable.

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Mitteilung aus dem Institut für Elektrische Nachrichtentechnik der Universität Stuttgart     

Multilayer Ceramic Capacitors with Thin (Ba,Sr)TiO3 Layers by MOCVD

Barium strontium titanate ((Ba,Sr)TiO₃; BST) thin films were prepared on platinum-coated MgO substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Perovskite single phased BST thin films were obtained. Dielectric constant at 1 kHz–100 mV was 1000. Multilayer ceramic capacitor with twelve BST dielectric layers of 0.26 m thick was formed on the MgO substrate. Capacitance and dissipation factor (tan) at 1 kHz–100 mV were 32 nF and 1.5% respectively. Capacitance per unit volume of 33 F/mm³ provided 10 to 20 times larger volumetric efficiency than the conventional multilayer ceramic capacitors. Temperature coefficient of capacitance was –4000 ppm/°C. The leakage current at 1 V was 2.3×10^-9 A that yielded an acceptable CR product of 12.8 M-F. MOCVD was proposed as one of the promising manufacturing technologies for multilayer ceramic capacitors of high performance with sub-micron thick dielectric layers.     

Recent Developments on MOCVD of Ferroelectric Thin Films

Ferroelectric Pb(Zr, Ti)O₃ thin films were fabricated by liquid delivery MOCVD using Pb(DPM)₂, Ti(OiPr)₂(DPM)₂ and Zr(DIBM)₄. The deposition rate of 12.3 nm/min was attained on 6-inch Pt/Ti/SiO₂/Si wafers at 550C. The average and the deviation of twofold remanent polarization were 45.5 C/cm² and ± 6.4%, respectively, over the 6-inch wafer. Step coverage was improved from 44% to 90% by decreasing deposition temperature from 550 to 400C although the deposition rate decreased by 60%. TiO₂ nanoparticles diffused to the surface of platinum bottom electrodes were effective as a seed to obtain 111 preferential oriented PZT thin films at the deposition temperature of 550C. Iridium oxide bottom electrodes were reduced to metal ones by CO and/or H₂ gases generated by decomposition of precursors. Oxide materials seem to be not the best as bottom electrodes in liquid delivery MOCVD. A cocktail source consisted of Pb(METHD)₂, Ti(MPD)(METHD)₂ and Zr(METHD)₄ was also examined. PbPt_x alloy phase existed in PZT films deposited at 500C was disappeared by post-annealing at 600C and the annealed film showed hysteresis properties with the 2P_r of 56 C/cm² and the 2E_c of 181 kV/cm.     

Novel Low Voltage Piezoactuators for High Displacements

To improve the performance of piezoelectric actuators, new 3-D designs were developed to gain higher displacements or specific bending effects. Such 3-D actuators of e.g. helical structure have next to the standard actuator or sensor applications the potential to be used in Hi-Fi digital sound projectors. To lower the voltage of the power supply for these miniaturized devices, multilayer structures based on thin tapes must be used. Two processing routes to manufacture helical shaped multilayer PZT structures with specific electrode designs are tested. One route starts from tape cast PZT green tapes of 90 m or 50 m thickness, the other from extruded and stretched PZT filled thermoplastic films (Solufill) of 9 m thickness. The properties of these two films are compared. The sheets are screen printed and laminated similar to standard planar multilayer processing. To manufacture helical three-dimensional multi-layers from these laminates new processing techniques are required. The most important difference compared to planar multilayer processing is the necessity to bend the laminated structures. The bending behavior depends on the layer thickness, the number of layers, the diameter of the helix and the flexibility of the tape. In addition, specific measures have to be taken to ensure that the bent multilayer keeps its shape and keeps the alignment of the electrode design during binder burnout and sintering. Finally, working products of super-helical structure suitable for miniaturized loudspeaker application are built and tested.     

Piezoresistivity in Silicon Carbide Fibers

The polycrystalline -SiC fiber of diameter 14 m (without a carbon core) is piezoresistive under tension, with gage factor 5. The resistivity increases linearly and reversibly with strain in the elastic regime. The fiber of diameter 140 m (with a carbon core) is not piezoresistive, due to the carbon core controlling the electrical resistance.     

Effect of Solution Processing on PZT Thin Films Prepared by a Hybrid MOD Solution Deposition Route

Lead zirconate titanate, Pb(Zr_0.53Ti_0.47)O₃ (PZT), thin films were prepared by a hybrid metalorganic decomposition (MOD) solution deposition route; the effects of processing conditions on the film structure and properties were investigated. Solutions were synthesized by mixing and reacting Zr acetylacetonate and Pb acetate trihydrate with a solution prepared from Ti isopropoxide, acetic acid and water. Chemical changes in the solution during preparation and solution storage (i.e., aging) were investigated by visual observation and FTIR, and were evidenced by changes in phase content and properties of the final PZT films. Results suggest that Zr acetylacetonate and Pb acetate trihydrate react with a Ti oxoacetate-based precursor, and that this reaction continues during aging at room temperature. The PZT film quality and properties improved with aging time of the solution before deposition. To achieve good properties and design a convenient processing route, an accelerated aging scheme, including a brief aging at 60°C and freezing to prevent further reaction, was developed. PZT films prepared from these solutions had average dielectric constants of 1040, loss tangents of 0.05, remnant polarizations of 26 C/cm², and coercive fields of 39 kV/cm.     

Accuracy of 3D MR microscopy for trabecular bone assessment: a comparative study on calcaneus samples using 3D synchrotron radiation microtomography

Magnetic resonance (MR) imaging is attractive for a noninvasive and radiation-free assessment of in vivo trabecular bone architecture. However the quantitative evaluation of architectural parameters could be biased by the limited sensitivity of MR. The aim of this study was to determine the accuracy of trabecular bone architectural parameters obtained from 3D high-resolution MR images, by comparison to reference images obtained by high-resolution X-ray microtomography using synchrotron radiation, from 29 samples of human calcaneus. MR images were obtained with a 66 m×66 m×66 m voxel size, using a 8.5 T MR microscope. Microtomography images were acquired with a 10 m×10 m×10 m voxel size, from the same samples. 3D architectural parameters characterizing the morphometry, topology, anisotropy, and orientation were computed from both modalities and carefully compared. To avoid errors, an identical region of interest was selected in the two corresponding images, and the same algorithms were run at identical spatial resolution. Our results establish that network connectivity, orientation and anisotropy are reliable from the MR data. The bone volume fraction, and morphometric parameters measured from the MR data, were found to be biased with respect to their values from the microtomography data, although there was a significant correlation between the two modalities.An erratum to this article can be found at     

Process Integration of Embedded FeRAMs

This paper describes the general aspects of embedding Ferroelectric Memories (FeRAMs) with logic circuits and/or microcontrollers. These devices and stand-alone memories constitute the main thrust of applications of ferroelectric memories. The problems associated with embedding test the robustness and compatibility of the FeRAM process with established CMOS integrated circuits. As integrated circuits technology advances in lithography, FeRAMs meet the challenge, but new problems appear. In this review, existing embedded FeRAMs of the 0.8/0.6 generation will be discussed. A program for the 0.35/0.25 generation, and the 0.18 challenges are outlined and addressed. The paper also reviews the application of FeRAM Smart Cards. This application is becoming the best example of embedded FeRAMs in which to demonstrate the System-One-Chip technology direction. Smart Card ICs clearly take advantage of the low power, high-write speed and long endurance characteristics of Ferroelectric Memories.     

Modern aspects of far-infrared gas lasers

Contents A short survey is presented on the recent development of optically pumped pulsed far-infrared (FIR) or THz gas lasers. This includes the new distributed-feedback (DFB) and helical-feedback (HFB) FIR gas lasers as well as the subnanosecond-single-pulse FIR gas lasers pumped by 50 ns 10 m pulses of hybrid CO₂ lasers truncated within ca. 10 ps at their maximum by a novel ultrafast laser-triggered plasma shutter. These lasers show interesting phenomena such as standard and swept-gain superradiance as well as anticorrelated oscillations of the far-infrared emission and the 10 m pump radiation in the Raman regime. In this context it was discovered that FIR laser gases, e.g., CH₃F, NH₃, D₂O, CH₃CN, can be used successfully as spectral filters in Optical-Free-Induction-Decay 10 m CO₂ laser systems instead of the standard hot CO₂ gas. Finally, the single ultrashort FIR pulses are presently applied to FIR or THz quantumwell detectors and to high-T _c superconductors to gain further information on their exciting and complicated features.

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Aktuelle Aspekte der Ferninfrarot (THz) Gaslaser

Übersicht Aktuelle Probleme und Resultate der Forschung über optisch-gepumpte gepulste Ferninfrarot (FIR)- resp. THz-Gaslaser werden erläutert. Diese betreffen sowohl die neuartigen Distributed Feedback (DFB) und Helical Feedback (HFB) FIR Gaslaser, als auch FIR Gaslaser, die gepumpt werden mit den 50 ns 10 m Pulsen von Hybriden CO₂ Lasern, welche mit neu entwickelten, Lasergesteuerten Plasmaschaltern innerhalb ca. 10 ps im Maximum abgeschnitten werden. Damit erzielt man Subnanosekunden-FIR Einzelpulse. Diese Laser zeigen interessante Phänomene, wie normale und verstärkte Superstrahlung oder antikorrelierte Fluktuationen der FIR Strahlung und 10 m Pumpstrahlung im Raman-Emissionsstadium. In diesem Zusammenhang wurde festgestellt, daß FIR Laser-Gase, z. B. CH₃F, NH₃, D₂O, CH₃CN, erfolgreich als Spektralfilter in Optical-Free-Induction-Decay 10 m CO₂ Lasersystemen das übliche heiße CO₂ Gas ersetzen können. Die einzelnen ultrakurzen FIR-Pulse werden zur Zeit zum Test neuer FIR resp. THz Quantum-Well-Detektoren und zur Untersuchung ihrer Einwirkung auf Hoch-T _c -Supraleiter verwendet.

     

On the calculation of pole surface leakage flux

Contents In designing electromagnetic circuits the pole surface leakage flux introduced by an air-gap, must be known. After defining the so called utilization factor, a review of the existing formulas for calculating it, is given. The major part of the paper deals with the presentation of a new and very accurate formula, based on the method of conformal mapping. Finally this formula is compared with experimental results.

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Übersicht Beim Entwurf magnetischer Kreise muß der Streufluß im Luftspalt bekannt sein. Nach der Definition des sogenannten Ausnützungsfaktors—d. h. des Verhältnisses von Nutzfluß zur Gesamtfluß—wird ein Überblick über bekannte Methoden zu seiner Berechnung gegeben. Mit Hilfe der konformen Abbildung wird eine neue und sehr genaue Berechnungsmethode vorgestellt. Die hieraus gewonnenen Lösungen werden mit experimentellen Ergebnissen verglichen.

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List of principal symbols a cylinder radius - g air-gap width - k modulus of the Jacobian elliptic functions - k complementary modulus - l fringe-path extent - n constant - q auxiliary quantity - t auxiliary variable - u, v, x, y real variables - ,z complex variables - A, B, C, D, E, F vertexes - E(u) fundamental elliptic integral of the second kind - E complete elliptic integral of the second kind - K complete elliptic integral of the first kind - M, N constants - , constants - , °, very small real values - running variable in thez-plane - utilization factor - , polar coordinates - ₀, _A , _C ,v _A ,v _A real exponents - , real variables - complex variable - _l , _m , _t leakage, main and total magnetic flux.     

Electrodynamic forces at thin non-magnetic tapes placed above ferromagnetic plates

Contents A method of calculation of the current density and electrodynamic forces at thin non-magnetic tapes placed in parallel to thick ferromagnetic plate is presented. The integral equation approach is applied, which permits to obtain an approximate solution of the problem considered. The tapes of finite width are considered. As an example, forces as a function of position and time are given.

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Elektrodynamische Kräfte auf dünne, nicht-magnetische Bänder, die parallel zu einer ferromagnetischen Platte angeordnet sind

Übersicht Es wird eine Methode zur Berechnung der Stromdichte und der elektrodynamischen Kräfte bei parallel zu einer dicken ferromagnetischen Platte angeordneten dünnen, nichtmagnetischen Bändern dargestellt. Eine Näherungslösung des betrachteten Problems wird mit Hilfe einer Integralgleichungsmethode erhalten, wobei ein Band mit endlicher Breite betrachtet wird. Als Beispiel werden die Kräfte in Abhängigkeit von Ort und Zeit angegeben.

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List of Symbols A vector potential - B magnetic density - 2d width of tape - h height of conductor above tape - l current in tape - J current density - k ² j _{0 s} - thickness of tape - ₀ permeability of vacuum - _r relative permeability of the ferromagnetic plate - conductivity of tape - _s conductivity of steel plate - _ij Kronecker delta - angular frequency     

Synthesis of Sr0.5Ba0.5Nb2O6 by Coprecipitation Method—Dielectric and Microstructural Characteristics

Sr_0.5Ba_0.5Nb₂O₆ (SBN50) has been synthesized by coprecipitation method using Sr(NO₃)₂, Ba(NO₃)₂ and Nb-oxalate as precursors and ammonium hydroxide as precipitant. Calcination at 1150C resulted in pure SBN50 phase (XRD) and nano powder with size varying between 100–250 nm (TEM). The average grain size (SEM) in the sintered pellets ranged from 2.5 to 5 m as the sintering temperature varied from 1250 to 1350C. The maximum sintered density was observed to be 93% of _th. The plot of dielectric constant vs. temperature clearly showed a shift of dielectric maxima (_max) with frequency, indicating the relaxor nature of SBN50. The room temperature dielectric constant (_RT > 2300) observed for all these samples is higher compared to the earlier reported values (_RT 1500). The T_c (for 1 KHz) varied from 47–60C depending on the sintering conditions. The hystersis loops were recorded at various temperatures. The maximum saturation polarization for the unpoled pellets was found to be 2.3 C/cm² when sintered at 1350C. The improvement in dielectric and ferroelectric behavior is attributed to the enhanced homogeneity attained by the coprecipitation synthesis route used in the present study. Correlations between microstructure (sintering conditions) and dielectric behavior is explored.     

FGTO — A fine structured GTO-thyristor with improved switching characteristics

Contents A fine structured GTO thyristor, abbreviated FGTO, has been developed to improve the switching characteristics. The new device has a cathode finger width of only 20 m and can be turned off without a negative gate bias at an anode current level of more than 200 A/cm². The turn-off time can be shortened down tot _off 500 ns by increasing the negative gate current. A snubber circuit is not necessary to turn off the FGTO's. The maximum rate of rise of anode voltage du/dl reaches more than 10 kV/s. Analytical models are developed to describe the turn-off transients of the FGTO's. Good agreement between the theoretical and experimental results could be achieved.

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FGTO — Ein feinstrukturierter GTO-Thyristor mit verbessertem Schaltverhalten

Übersicht Zur Verbesserung des Schaltverhaltens ist ein feinstrukturierter GTO-Thyristor, abgekürzt FGTO, entwickelt worden. Dieses neue Bauelement hat eine Kathoden-streifenbreite von nur 20 m und kann ohne negative Gatevorspannung bei einer Anodenstromdichte von mehr als 200 A/cm² abgeschaltet werden. Die Abschaltzeit läßt sich durch Erhöhung des negativen Gatestroms bis zut _off 500 ns verkürzen. Beim Abschalten von FGTOs ist keine RC-Beschaltung erforderlich. Der maximale du/dl-Wert erreicht mehr als 10 kV/s. Zur Beschreibung des Abschalt-verhaltens von FGTOs werden analytische Modelle entwickelt, die eine gute Übereinstimmung mit den Meßergebnissen liefern.

     

Das Feld der elektromagnetischen Strahlung im Innern eines hohlen Drehparabols mit einem axial gerichteten elektrischen oder magnetischen Dipol im oder vor dem Brennpunkt

Ohne ZusammenfassungZusammenstellung der Formelzeichen =2 f die Kreisfrequenz und die gewöhnliche Schwingungszahl in Hz/s, - exp (–it) das Zeitgesetz der stationären Dipolschwingung - g ^(e)=–i die elektrodynamische Leitfähigkeit für den elektrischen Verschiebungsstrom in S/cm mit= =1/36·10^–11 F/cm für das Vakuum - g ^(m)=+i die elektrodynamische Leitfähigkeit für den magnetischen Verschiebungsstrom in Ohm/cm mit=4·10^–H/cm für das Vakuum - c=()^–1/2 die dem Medium zukommende Lichtgeschwindigkeit in cm/s, - =c/f die der aufgedrückten Schwingung zukommende Vakuumwellenlänge in cm - 2/ die Wellenzahl des Mediums in 1/cm - (/)^1/2 der Wellenwiderstand der freien Raumwelle mit dem Zahlenwert 120 Ohm - die elektrische und magnetische Feldstärke in V/cm und A/cm - x, y, z die drei rechtwinkligen und rechtshändigen Cartesischen Koordinaten - , , die drei rechtwinkligen und rechtshändigen Zylinderkoordinaten - , , die drei rechtwinkligen und rechtshändigen parabolischen Koordinaten - _r der Wert für die parabolische Koordinate in der Begrenzungsfläche des parabolischen Horns oder die Brennweite des Drehparabols in cm - _q der Wert für die parabolische Koordinate, die die Lage des Dipols auf der Achse fixiert - ^'=2k die dimensionslosen, reduzierten, parabolischen Koordinaten - R, R _q der Abstand des Brennpunkts oder des Dipols vom Aufpunkt in cm - I ^(e)·,I ^(m)· das elektrische oder magnetische Moment des Dipols in A/cm und V/cm mit als elementare Dipollänge - zwei Hilfsvektoren in A und V, von denen nur diez-Komponente von Null verschieden ist     

Beitrag zur Theorie des Spaltpolmotors

Übersicht Der im Aufbau einfache Spaltpolmotor erfordert zur Erklärung und Behandlung aller Erscheinungen ein umfangreiches Gleichungssystem. Aus den Spannungsgleichungen lassen sich über die Motorkenngrößen die Ströme und hieraus über die fiktiven Luftspaltfelder die Drehmomente ermitteln. Sättigungs-und Oberfeld-Einflüsse werden berücksichtigt. Die Wirkungen der Luftspaltfelder, wie Erzeugung von Drehmomenten, Stromwärmeverlusten, Luft- und Körperschall, werden ebenso behandelt wie die Verringerung der schädlichen Felder. Messungen an einem großen, stark ausgenutzten Motor bestätigen die abgeleiteten Gleichungen. Für die Untersuchung der Luftspaltfelder werden drei Verfahren benutzt. Die Arbeit schließt mit Auslegungsrichtlinien und Regeln für die Vorausberechnung.Übersicht der benutzten Formelzeichen Augenblickswert des Strombelags in A/cm - Augenblickswert der Induktion in Vs/cm² - Diagrammvektor des Stromes in A - Totale Induktivität in Hy - Teilinduktivität in Hy - Gegeninduktivität in Hy - Augenblickswert der Radialkraftwelle in kp - Amplitude der Radialkraftwelle in kp - Diagrammvektor der Spannung in V - A Amplitude der Strombelagswelle in A/cm - B Amplitude der Drehinduktionswelle in Vs/cm² - b Ständerabmessung in cm - C ₁ Federhärte der Läuferwelle in kp/cm - c _y Fourierkoeffizient fürv-tes Feld - d _v Fourierkoeffizient fürv-tes Feld - E Effektivwert der EMK in V - e 2, 7182=Basis des natürlichen Logarithmus - e _x Augenblickswert der an der Stelle induzierten EMK in V - F Amplitude der Felderregerwelle in A - F _sp Wirksamer Durchtrittsquerschnitt der Meßspule in cm² - f Frequenz in Hz - f() Augenblickswert der Felderregerkurve in A - g ganze Zahlen=1,2,3,... - I Effektivwert des Stromes in A - i Augenblickswert des Stromes in A - j - K Konstante - l Effektive, achsiale Länge des Blechpakets in cm - l _m Mittlere Windungslänge in m - M Drehmoment in cmkp - N _rel Relative Strahlungsleistung in W - n Umdrehungszahl in 1/min - n ₀ Synchrone Drehzahl des Grundfeldes in 1/min - p Polpaarzahl des Grundfeldes - q Leiterquerschnitt in mm² - R Läuferaußenradius in cm - R Gesamter Wirkwiderstand einer Wicklung in (gekennzeichnet durch , oder ) - ^– Ordnungszahl (Polpaarzahl) der Radialkraftwelle - Teilwiderstand in (gekennzeichnet durch , oder ) - s Schlupf - t Zeit in s - t Polteilung in cm - U Effektivwert der Spannung in V - u Augenblickswert der Spannung in V - V Stromwärmeverluste in W - Windungszahl - Umfangskoordinate - Z Läufernutenzahl - _s Schrägungswinkel - Geometrischer Luftspalt in cm (ohne Kennzeichnung) - Effektiver Luftspalt in cm (mit Kennzeichnung) - Räumlicher Winkel zwischen Haupt- und Spaltpol - Feldfaktor - ₁ Resonanzüberhöhung - Spezifische elektrische Leitfähigkeitin m/mm² - Ordnungszahl der Felder - Streuleitwert (mit Kennzeichnung) - Ordnungszahl der Oberströme - ₀ 4 °10^–9 - _str Relative magnetische Leitfähigkeit des Streublechs - v Polpaarzahl der Felder - 3,1415 - Ordnungszahl der Oberströme - Streufaktor (mit Kennzeichnung) - _g Geometrischer Streukoeffizient des Läufers - Scheitelwert des magnetischen Flusses in Vs - Elektrischer Phasenwinkel - Kreisfrequenz in 1/s - A Anzugs- - ges. Gesamt- - i Bestimmter Wert - K Kipp- - L Luftspalt- - m Mittlerer Wert - N Nenn- - o Leerlauf, offener Läufer - p Grundfeld - R Läuferendring oder Wickelkopf - res. Resultierend - s Läuferstab- - sp Meßspule - str Streublech - Stelle - -tes Feld - -ter Erregerstrom - v v-tes Feld - -ter Erregerstrom - Streuinduktivität (ber und ) - -ter Erregerstrom - 1 r=1 - 12 Hauptopol-Läufer - 32 Spaltpol-Läufer - 13 Hauptpol-Spaltpol - 3p 3p-faches Feld - + Mitlaufende Komponente - – Gegenlaufende Komponente - = Gleichstrom - Hauptpol - Läufer - Spaltpol - Vektor Mit 25 Textabbildungen     

Watt-hour efficiency of system loop inductor-ferromagnetic plate

Contents A numerical method of calculation of Watt-hour efficiency of a system loop inductor-ferromagnetic plate is presented. The integral equation approach is applied. The presented method permits to compute the eddy-current losses in the ferromagnetic plate without integrating the Poynting vector. As an example the watt-hour efficiency as a function of angular frequency is calculated.

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Elektrischer Wirkungsgrad im System Induktionsschleife — Ferromagnetische Platte

Übersicht In der Arbeit wird eine numerische Berechnungs-methode des elektrischen Wirkungsgrades in dem System Induktionsschleife—ferromagnetische Platte dargestellt.Es wird die Methode der Integralgleichungen angewendet. Die Methode gestattet die Berechnung der Wirbelstromverluste in einer ferromagnetischen Platte ohne den Poynting-Vector zu integrieren. Ein Berechnungsbeispiel zeigt den elektrischen Wirkungsgrad als Funktion der Kreisfrequenz.

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List of principal symbols A vector potential - I total current in the loop-inductor - J current density - k ² j _{0 f f} - P active power loss - R _{l, m} mutual resistance of conductorsl andm - Z _{l, m} mutual impedances of conductorsl andm - _c conductivity of the conductors - _f conductivity of the ferromagnetic plate - ₀ Kronecker delta - _f relative permeability of the ferromagnetic plate - ₀ permeability of the vacuum - angular frequency - watt-hour efficiency     

Elektrische Leitfähigkeit von kugelförmigem Kupferpulver unter Druck

Übersicht Die elektrische Leitfähigkeit von kugelförmigem Kupferpulver verhält sich zwischen 50 bar und 500 bar proportional zum Preßdruck und steigt im Bereicht zwischen 4 m und 25 m ebenfalls annähernd proportional mit dem Korndurchmesser an. Dies steht i m Einklang zu theoretischen Erwartungen. Bei höherem Druck und inbesondere bei groben Kornfraktionen auftretende Abweichungen lassen sich durch die Zerstörung der auf der Oberfläche der Pulverkörner vorhandenen Oxidschicht erklären.

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On the electric conductivity of compressed spherical copper powder

Contents The electric conductivity of copper powder of spherical particle shape approximately increases proportionally to both the applied pressure in the range between 50 bar and 500 bar and the grain diameter between 4 m and 25 m. This is in agreement with known theory. At higher pressures deviations have been observed, especially at large grain diameters. This may be expalined by the damage of oxide layers on the surface of the powder particles.

     

High-resolution magnetic resonance imaging of iron-labeled myoblasts using a standard 1.5-T clinical scanner

Myoblast transplantation is a promising means of restoring cardiac function in infarcted areas. For optimization of transplant protocols, tracking the location and fate of the injected cells is necessary. An attractive imaging modality for this is magnetic resonance imaging (MRI) as it is noninvasive and as iron-labeled myoblasts provide a signal attenuation in T2*-weighted protocols. The aim of this study was to develop an efficient iron-labeling protocol for myoblasts and to visualize single-labeled cells using a clinical 1.5-T scanner. Pig myoblasts were labeled with a superparamagnetic iron oxide (SPIO) agent using a liposome transfection agent. Labeling efficiency, toxicity, cell viability, and proliferative capacity were measured for 10 days. Magnetic resonance (MR) of myoblast cultures used a T2*-weighted three-dimensional protocol with a maximum in-plane resolution of 19.5 × 26.0 m² and 50 m slices. Use of liposomes improved SPIO labeling efficiency. Labeling did not induce toxicity or affect cell viability or proliferation. The cell distribution as observed with light and fluorescence microscopy matched the signal voids observed in the MRI datasets. Liposomes promote fast, nontoxic and efficient SPIO labeling of myoblasts that can be tracked by MRI microscopy in clinical scanners using susceptibility-weighted protocols.