Substrate effects on surface morphologies and magnetic properties of nanostructured FePt thin films

The substrate effects on surface morphologies, crystal structures, and magnetic properties of the sputter-deposited FePt thin films on Corning 1737, normal glass, and Si wafer substrates, respectively, were investigated. High in-plane coercivities of 10 kOe were obtained for the air-annealed films on Corning 1737 and Si wafer, where both films similarly have granular-like morphologies. Besides, increasing grain size and surface roughness of all the FePt films with the post-anneal temperature were observed. Moreover, partially separated grains were seen in the film on Si wafer, where the formation of Fe silicides during post-anneal is suspected, in which has enhanced the magnetic ordering.     

Optimization of L10-FePt/MgO/CrRu thin films for next-generation magnetic recording media

L1₀-FePt thin films were deposited on silicon substrates with the structure of Si/CrRu/MgO/FePt. The magnetic and microstructural properties were optimized by varying the FePt sputter pressure and temperature, as well as the thicknesses of all three layers. High coercivity films greater than 1.8 T were grown when the FePt sputter pressure was at 1.33 Pa with a thickness of only 4 nm, on CrRu and MgO underlayers as thin as 10 nm and 2 nm, respectively.     

FeTaC magnetic soft underlayer for L1(0) FePt based perpendicular recording media

FeTaC magnetic soft underlayer under elevated temperature process conditions for L1(0) FePt based perpendicular recording media has been investigated. After annealing FeTaC for 40 min at 350 degrees C, saturation moment increases to 750 emu/cm3 and, coercivity and remanent moment reduce to 2.3 Oe and 166 emu/cm3 respectively. The microstructure of FeTaC annealed at 350 degrees C for 40 min composes of Fe nanocrystals with random orientations immersed in an amorphous matrix. FeTaC surface roughness due to elevated temperature process is reduced by 100 W RF plasma etching and CrRu with (200) orientation is developed. It is found that changing elemental composition due to C diffusion into the CrRu layer and RF preferential etching over Fe, Ta and C has the influence on the magnetic properties of FeTaC.     

Effect of carbon additive on microstructure evolution and magnetic properties of epitaxial FePt (001) thin films

FePt:C thin films were deposited on CrRu underlayers by DC magnetron co-sputtering. The effects of C content, FePt:C film thickness and substrate temperature on the microstructural and magnetic properties of the epitaxial FePt (001) films were studied. Experimental results showed that even with 30 vol.% C doping, the FePt films could keep a (001) preferred orientation at 350 °C. When a FePt:C film was very thin (< 5 nm), the film had a continuous microstructure instead of a granual structure with C diffused onto the film surface. With further increased film thickness, the film started to nucleate and formed a column microstructure over continuous FePt films. A strong exchange coupling in the FePt:C films was believed to be due to the presence of a thin continuous FePt layer attributed to the carbon diffusion during the initial stage of the FePt:C film growth. Despite the presence of a strong exchange coupling in the FePt:C (20 vol.% C) film, the SNR ratio of the FePt:C media was about 10 dB better than that of the pure FePt media. The epitaxial growth of the FePt:C films on the Pt layers was observed from high resolution TEM cross sectional images even for the films grown at about 200 °C. The TEM images did not show an obvious change in the morphology of the FePt:C films deposited at different temperatures (from 200 °C to 350 °C), though the ordering degree and coercivity of the films increased with increased substrate temperature.     

Low temperature ordering of FePt films by in-situ heating deposition plus post deposition annealing

FePt thin films with 40 nm thickness were prepared on thermally oxidized Si (001) substrates by dc magnetron sputtering at the nominal growth temperature 375 °C. The effects of annealing on microstructure and magnetic properties of FePt thin films were investigated. The as-deposited FePt thin films show soft magnetic properties. After the as-deposited FePt thin films were annealed at various temperatures and furnace cooled, it is found that the ordering temperature of L1₀ FePt phase could be reduced to 350 °C. For FePt thin films annealed at 350 °C, the in-plane and out-of-plane coercivities of the films increased to 510 and 543 kA/m, respectively, and the films had hard magnetic properties. A highly (001) orientation was obtained, when FePt thin films were annealed at 600 °C. And the hysteresis loops of FePt thin films annealed at 600 °C show out-of-plane magnetic anisotropy.     

A comparative study of InN growth on quartz,silicon, C-sapphire and bulk GaN substrates by RF magnetron sputtering

In this work, we investigate the growth of indium nitride (InN) films on quartz, bulk GaN, sapphire (001) and Si (111) substrates. An InN buffer layer was first deposited on all the substrates, then an InN film was grown on bare substrate and InN buffered substrates. The films were polycrystalline in nature with preferred orientation along (002) plane. Best structural quality was observed on InN buffered Si substrate. The structural properties were explained by calculating the full width at half maximum, crystallite size, micro-strain, and dislocation density. The morphology of the films revealed similar granular features except for bare sapphire substrate which showed cracks and more oxygen percentage. The application of buffer layer increased the surface roughness for quartz and reduced in other cases. The band gap of InN films was determined using UV–visible reflectance spectroscopy. The lowest band gap value was observed for InN buffered quartz substrate.     

Dendrimer-Mediated Adhesion between Vapor-Deposited Au and Glass or Si Wafers

Here, we report the use of amine-terminated poly(amidoamine) (PAMAM) dendrimers as adhesion promoters between vapor-deposited Au films and Si-based substrates. This method is relatively simple, requiring only substrate cleaning, dipping, and rinsing. Proof of concept is illustrated by coating glass slides and single-crystal Si wafers with monolayers of PAMAM dendrimers and then evaporating adherent, 150-nm-thick Au films atop the dendritic adhesion promoter. Scanning tunneling microscopy and cyclic voltammetry have been used to assess the surface roughness and electrochemical stability of the Au films. The effectiveness of the dendrimer adhesion layer is demonstrated using standard adhesive-tape peel tests.     

Influence of substrate and Ar/N<Subscript>2</Subscript> gas flow ratio on structural,optical and electrical properties of TiN thin films synthetized by DC magnetron sputtering

Titanium nitride (TiN) thin films have been prepared by direct-current reaction magnetron sputtering technique on different substrates (glass and Si) and the influence of substrate and Ar/N₂ gas flow ratio on structural, optical and electrical properties of TiN thin films were discussed. X-ray diffraction suggested that with the ratio of Ar/N₂ decreasing, the diffraction intensity of (111) plane gradually diminished while (200) plane increased and films on Si substrate exhibited better crystalline quality than glass substrate. Improvement of Ar/N₂ ratio is contribute to enhance the deposition rate and the obvious surface roughness were observed when the ratio up to 49. Photoluminescence spectra showed that TiN films on Si substrate showed higher intrinsic emission and lower defect emission. Moreover, the resistivity of TiN films showed obviously decreasing as the flow rate ratio of Ar/N₂ increased, especially films on Si substrate.     

Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN film grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth.     

Effect of capped layer on microstructure and magnetic properties of FePt films

Sputter-deposited FePt films exhibit an in-plane magnetic anisotropy when MgO is used as the capped layer. The perpendicular magnetic anisotropy of FePt films can be enhanced by introducing a Ag capped layer instead of a MgO capped layer. Although the in-plane coercivity (Hc_//) of FePt films decreases slightly after introducing a Ag capped layer instead of a MgO capped layer, the perpendicular coercivity (Hc_⊥) is increased significantly from 3169 Oe to 6726 Oe. Auger electron spectroscopy analysis confirms that Ag atoms diffuse from the capped layer into the FePt magnetic layer and are mainly distributed at the grain boundary of FePt. This phenomenon results in enhancement of the grain boundary energy and inhibition of grain growth, thus increasing the perpendicular coercivity and reducing the grain size of the FePt film.     

Coercivity variation in exchange-coupled Fe/FePt bilayer with perpendicular magnetization

The soft/hard Fe/FePt film with perpendicular magnetization has been deposited on a glass substrate. The (001) oriented L1₀ FePt film was obtained when annealed by rapid thermal process at 800 °C and a Fe layer was deposited at room temperature with thicknesses of 2 nm to 20 nm. Controlling the Fe layer thickness allowed modification of the hysteresis loops from out-of-plane rigid magnet to in-plane exchange-spring like magnet due to the nanometer scale interface coupling. When the Fe layer thickness increased to 2 nm, the out-of-plane coercivity is reduced to 5.9 kOe but the remanence ratio (0.98) is still high. The Fe (2 nm)/FePt film shows perpendicular magnetization with linear in-plane hysteresis loop. The remanence ratio is reduced to 0.85 when the Fe layer thickness increased to 5 nm. When the Fe layer thickness was varied up to 10-20 nm, the in-plane hysteresis loop shows exchange-spring like behavior with two-step magnetization reversal processes. The films with perpendicular coercivity were moderated by the thickness of soft magnetic layer.     

Mo/Si and Mo/Be multilayer thin films on Zerodur substrates for extreme-ultraviolet lithography

Multilayer-coated Zerodur optics are expected to play a pivotal role in an extreme-ultraviolet (EUV) lithography tool. Zerodur is a multiphase, multicomponent material that is a much more complicated substrate than commonly used single-crystal Si or fused-silica substrates. We investigate the effect of Zerodur substrates on the performance of high-EUV reflectance Mo/Si and Mo/Be multilayer thin films. For Mo/Si the EUV reflectance had a nearly linear dependence on substrate roughness for roughness values of 0.06-0.36 nm rms, and the FWHM of the reflectance curves (spectral bandwidth) was essentially constant over this range. For Mo/Be the EUV reflectance was observed to decrease more steeply than Mo/Si for roughness values greater than approximately 0.2-0.3 nm. Little difference was observed in the EUV reflectivity of multilayer thin films deposited on different substrates as long as the substrate roughness values were similar.     

Tunable magnetic properties by interfacial manipulation of L1(0)-FePt perpendicular ultrathin film with island-like structures

Based on interfacial manipulation of the MgO single crystal substrate and non-magnetic AIN compound, a L1(0)-FePt perpendicular ultrathin film with the structure of MgO/FePt-AIN/Ta was designed, prepared, and investigated. The film is comprised of L1(0)-FePt "magnetic islands," which exhibits a perpendicular magnetic anisotropy (PMA), tunable coercivity (Hc), and interparticle exchange coupling (IEC). The MgO substrate promotes PMA of the film because of interfacial control of the FePt lattice orientation. The AIN compound is doped to increase the difference of surface energy between FePt layer and MgO substrate and to suppress the growth of FePt grains, which takes control of island growth mode of FePt atoms. The AIN compound also acts as isolator of L1(0)-FePt islands to pin the sites of FePt domains, resulting in the tunability of Hc and IEC of the films.     

Growth of pseudocubic perovskite-type SrRuO3 thin films on quartz substrate using pulsed laser deposition method

Strontium ruthenium oxide (SrRuO₃) thin films have been grown using pulsed laser deposition technique on silicon, Pt coated silicon and quartz substrates. The effect of substrate temperatures on the structural, microstructure, and electrical properties of the SrRuO₃ films on quartz substrate has been investigated using XRD, SEM, AFM and four-probe method, respectively. The lowest resistivity at room temperature for the SrRuO₃ thin film on quartz substrate has been achieved at substrate temperature of 700 °C. Furthermore, the comparisons of SrRuO₃ thin films deposited on various substrates have been done with respect to structural, microstructural and electrical properties. XRD patterns exhibit that all thin films are a single phase, pseudo-cubic perovskite structure. Study of surface morphology shows that grain size and roughness varies with respect to substrate. It is observed that SrRuO₃ thin films yield larger grain size and root mean square roughness on Pt/Si substrate. Investigation of electrical properties shows that SrRuO₃ thin films can serve the purpose of the bottom electrode in dielectric and ferroelectric devices.     

Controlling the crystallinity and roughness of atomic layer deposited titanium dioxide films

The surface roughness of thin films is an important parameter related to the sticking behaviour of surfaces in the manufacturing of microelectomechanical systems (MEMS). In this work, TiO2 films made by atomic layer deposition (ALD) with the TiCl4-H2O process were characterized for their growth, roughness and crystallinity as function of deposition temperature (110-300 degrees C), film thickness (up to approximately 100 nm) and substrate (thermal SiO2, RCA-cleaned Si, Al2O3). TiO2 films got rougher with increasing film thickness and to some extent with increasing deposition temperature. The substrate drastically influenced the crystallization behaviour of the film: for films of about 20 nm thickness, on thermal SiO2 and RCA-cleaned Si, anatase TiO2 crystal diameter was about 40 nm, while on Al2O3 surface the diameter was about a micrometer. The roughness could be controlled from 0.2 nm up to several nanometers, which makes the TiO2 films candidates for adhesion engineering in MEMS.     

X-ray reflectivity study of bias graded diamond like carbon film synthesized by ECR plasma

Diamond like carbon (DLC) coatings were deposited on silicon substrates by microwave electron cyclotron resonance (ECR) plasma CVD process using plasma of Ar and CH ₄ gases under the influence of negative d.c. self bias generated on the substrates by application of RF (13·56 MHz) power. The negative bias voltage was varied from ?60 V to ?150 V during deposition of DLC films on Si substrate. Detailed X-ray reflectivity (XRR) study was carried out to find out film properties like surface roughness, thickness and density of the films as a function of variation of negative bias voltage. The study shows that the DLC films constituted of composite layer i.e. the upper sub surface layer followed by denser bottom layer representing the bulk of the film. The upper layer is relatively thinner as compared to the bottom layer. The XRR study was an attempt to substantiate the sub-plantation model for DLC film growth.     

Effect of substrates on the chemical characteristics and evolving structures of an organic superhydrophobic coating

While recent research has used organic coatings to replace chromium-based coatings, the ability of a coating material to repeat its chemical properties on different substrates is still under investigation. The Repellix superhydrophobic compound was developed and deposited on three different substrates using the atomic layer deposition method under the same condition. The films were characterized using the scanning electron microscope, atomic force microscope, water contact angle, attenuated Fourier transform infrared, and x-ray diffractometer. The surface morphology revealed that microstructural evolutions and topologies are different. The roughness of the coating deposited on stainless steel is the highest at 38.39 nanometers, while mild steel substrate showed the least surface roughness at 28.66 nanometers. From observations, the roughness also contributed to the degree of superhydrophobicity of the films deposited on substrates. The multiple hydroxyl functional groups observed in the Fourier transform spectroscopy in the range 3200 cm⁻¹ to 4000 cm⁻¹ would aid the adhesion of deposited films to the substrates. The x-ray diffraction results showed that all substrates had chemical stability, and the Repellix compound is amorphous on all substrates. Stainless steel showed to be the most robust among the substrates considered.     

Tensile strain engineering of Si thin films using porous Si substrates

Highly tensile strained (up to 2.2%) thin monocrystalline silicon (mc-Si) films were fabricated by a simple and low-cost method based on the in-plane expansion of meso-porous silicon (PS) substrates upon low temperature oxidation. To control the film thickness below 100 nm, an original “two wafer” technique was employed during the porosification process. This method enables the fabrication of a 60 nm thick mc-Si films on 250 μm thick meso-porous silicon substrates over areas as large as 2 in. with a surface roughness and cleanliness comparable to that of standard Si wafers. Crack-free 60 nm thick Si films can be strained up to 1.2% by controlled low temperature oxidation of the PS substrate. Structural and strain analysis of the PS/mc-Si structures performed by transmission electron microscopy and micro-Raman scattering spectroscopy are reported.     

Self-assembled nano-size FePt islands for ultra-high density magnetic recording media

To find a method to form nano-size FePt alloy for ultra-high density magnetic recording media, this work concentrated on the formation mechanisms of nano-island FePt films on amorphous glass substrates. FePt films of different thicknesses (1-10 nm) were deposited on amorphous glass substrates and post-annealed at 700 °C for 10 and 30 min. The configuration of the film changed during the annealing process due to the surface energy difference between the glass substrate and FePt alloy. Investigation of the microstructures and magnetic properties of the ordered L1₀ FePt films revealed that the 1 nm FePt film annealed at 700 °C for 10 min had perpendicular magnetic anisotropy and good reproducibility of forming well-separated FePt nano-size islands for ultra-high density magnetic recording media.     

Nanogranular L1(0) FePt-C-Ta2O5 composite media for perpendicular recording applications

In this report, the effect of simultaneously adding two dopants (C and Ta2O5) in FePt was investigated. (Fe55Pt45)79C21-(x vol%) Ta2O5 films (where x = 0% to 20%) were prepared using both low and high power magnetron sputtering on MgO (2 nm)/CrRu (30 nm) underlayers with in-situ heating at 350 degrees C. Films deposited at low power showed a decrease in exchange coupling with increasing Ta2O5 content. Out-of-plane coercivity of 7.2 kOe was observed even with up to 20 vol% Ta2O5. X-Ray diffraction spectra showed presence of FePt(001) texture for all compositions of Ta2O5 ranging from 0 to 20 vol% suggesting that the perpendicular anisotropy was maintained even with up to 20 vol% of dopant content. Films deposited at high power showed a different behavior with an initial increase in out-of-plane coercivity to 8.2 kOe and a reduction in exchange coupling with loop slope parameter (alpha) approaching a fully decoupled value of 1. Further increase in doping content led to deterioration in the out-of-plane coercivity, as well as an increase in the exchange coupling.