缓冲层对铜催化生长碳管形貌和性能的影响

碳纳米管的生长通常使用Fe,Co,Ni作为催化剂,除此以外的一些过渡元素也能催化裂解生长碳管。其中用铜制备的碳管阈值电场低、发射电流密度大、发射均匀性好等等良好的场发射特性。铜与硅、或金属之间具有很强的的扩散特性,而碳管应用于场发射显示器必然使用玻璃、硅片作为衬底,所以需要一层缓冲层阻挡催化剂铜扩散入衬底。本文使用磁控溅射制备铜薄膜作为催化剂,化学气相沉积方法裂解乙炔生长碳管薄膜形成场发射阴极。并试验W,Ni,Cr和Ti作为铜薄膜的缓冲层,结果表明不同的金属阻挡特性不同,生长后碳管的形貌和特性都有差异。结果表明Ti和W能很好地阻挡铜的扩散,从而使铜催化裂解出附着性好、分布均匀、密度适中、场发射特性良好的碳管薄膜。对于Ni和Cr金属,由于生长的碳管与衬底结合差或者场发射能力差而不适合作铜的缓冲层。     

浅谈CTE及其对FC—BGA焊点可靠性的影响

PCB对封装行业来说,最关键的莫过不同元器件和PCB之间的热膨胀系数（CTE）匹配性问题。其中FCRGA封装,通过倒装芯片实现芯片焊料凸点与FCBGA基板的直接连接,在FCBGA类产品中可实现较高的封装密度,获得更优良的电性能和热性能。但由于PCB与芯片之间cTE的不匹配,而导致FCBGA焊点的可靠性问题。本文就CTE影响FCBGA焊点可靠性展开讨论。     

回流焊对SnAgCu焊点IMC及剪切强度的影响

研究了回流焊次数对Sn-0.3Ag-0.7Cu-xNi/Cu(x=0,0.05)焊点的界面反应及其剪切强度的影响。结果表明:随着回流焊次数的增加,界面金属间化合物(IMC)Cu6Sn5和(Cu1-xNix)6Sn5的厚度均增加。在钎料中添加w(Ni)为0.05%,可有效抑制IMC的生长,与回流焊次数无关。回流焊次数对Sn-0.3Ag-0.7Cu/Cu和Sn-0.3Ag-0.7Cu-0.05Ni/Cu的剪切强度影响都不大,五次回流焊后剪切强度略有下降,剪切强度分别为21MPa和25MPa。发现断裂面部分在钎料中,部分在钎料和IMC之间。     

剪切推球测试条件对Au球焊点推球结果的影响

Au引线键合是电子封装中应用广泛的芯片互连技术,剪切推球测试是评价引线键合球焊点质量和完整性的主要方法之一.利用未热老化和热老化不同时间的Au球键合试样,通过试验和数值模拟研究了推球高度和推球速度对推球值和推球失效界面形貌的影响.     

液态时效对Sn-0.7Cu焊点界面形貌及力学性能的影响

对不同温度下Sn-0.7Cu/Cu界面金属间化合物的生长进行了研究并对其拉伸性能进行了测试,计算了液态下Sn-0.7Cu/Cu界面IMC的扩散系数。研究结果表明,液态时效的过程中,界面Cu_6Sn_5晶粒尺寸逐渐增大,界面晶粒变得致密,Cu_6Sn_5晶粒表面产生新的凸起,并逐渐沿高度方向生长。液态时效下,界面IMC的生长受到扩散机制控制,其扩散系数高出固态时效2个数量级。随着时效时间的增加,焊点的抗拉强度先下降后趋于稳定,断裂方式由韧性断裂向解理断裂转变。     

SiO2/Ta界面反应及其对铜扩散的影响

利用磁控溅射方法在表面有SiO2层的Si基片上溅射Ta/NiFe薄膜,采用X射线光电子能谱(XPS)研究了SiO2/Ta界面以及Ta5Si3标准样品,并进行计算机谱图拟合分析.实验结果表明在制备态下在SiO2/Ta界面处发生了热力学上有利的化学反应:37Ta+15SiO2=5Ta5Si3+6Ta2O5,界面处形成更稳定的化合物新相Ta5Si3、Ta2O5.在采用Ta作阻挡层的ULSI铜互连结构中这些反应产物可能有利于对Cu扩散的阻挡.     

SiO2/Ta界面反应及其对铜扩散的影响

利用磁控溅射方法在表面有SiO2层的Si基片上溅射Ta/NiFe薄膜,采用X射线光电子能谱(XPS)研究了SiO2/Ta界面以及Ta5Si3标准样品,并进行计算机谱图拟合分析.实验结果表明在制备态下在SiO2/Ta界面处发生了热力学上有利的化学反应:37Ta+15SiO2=5Ta5Si3+6Ta2O5,界面处形成更稳定的化合物新相Ta5Si3、Ta2O5.在采用Ta作阻挡层的ULSI铜互连结构中这些反应产物可能有利于对Cu扩散的阻挡.     

Cu/Zr-Si-N/Si金属化系统制备及退火气氛对其热稳定性的影响

采用磁控溅射法在n型〈111〉晶向的Si衬底上形成了Zr-Si-N薄膜及Cu/Zr-Si-N/Si金属化系统.将Cu/Zr-Si-N/Si金属化系统样品分别在真空及H2/N2(体积比为1∶9)气氛中800℃退火1h.对Zr-Si-N薄膜和退火后的金属化系统样品进行X射线衍射、X射线光电子能谱、扫描电镜、薄层电阻率及俄歇电子能谱测试与分析.结果表明,Zr-Si-N阻挡层是以ZrN晶体与非晶相Si3N4或其他Si-N化合物的复合结构形式存在.经过两种气氛退火后的样品均没有发生阻挡层失效,但与真空退火相比,H2/N2退火气氛由于不存在残余O2的作用而表现出较低的Cu膜薄层电阻率及较好的Cu/Zr-Si-N/Si界面状态.     

Cu/Zr-Si-N/Si金属化系统制备及退火气氛对其热稳定性的影响

采用磁控溅射法在n型〈111〉晶向的Si衬底上形成了Zr-Si-N薄膜及Cu/Zr-Si-N/Si金属化系统.将Cu/Zr-Si-N/Si金属化系统样品分别在真空及H2/N2(体积比为1∶9)气氛中800℃退火1h.对Zr-Si-N 薄膜和退火后的金属化系统样品进行X射线衍射、X射线光电子能谱、扫描电镜、薄层电阻率及俄歇电子能谱测试与分析.结果表明,Zr-Si-N阻挡层是以ZrN晶体与非晶相Si3N4或其他Si-N化合物的复合结构形式存在.经过两种气氛退火后的样品均没有发生阻挡层失效,但与真空退火相比,H2/N2退火气氛由于不存在残余O2的作用而表现出较低的Cu膜薄层电阻率及较好的Cu/Zr-Si-N/Si界面状态.     

同质缓冲层厚度对掺铝氧化锌薄膜性能的影响

室温下,采用射频磁控溅射法在玻璃衬底上制备具有同质缓冲层的ZnO∶Al(AZO)薄膜。用X射线衍射仪、紫外-可见分光光度计、四探针探测仪等对薄膜的结构和光电性能进行了研究。结果表明:当薄膜总厚度为400 nm时,制备具有66 nm同质缓冲层的AZO薄膜的方块电阻为26Ω.□–1,与单层AZO(400 nm)薄膜的方块电阻(63Ω.□–1)相比,下降了59%,其在可见光范围内的平均透过率为91%。     

WLCSP焊球直径对其剪切强度和失效模式的影响

为满足电子设备不断小型化与多功能化的需要,圆片级芯片尺寸封装(WLCSP)芯片上焊球的尺寸不断缩小,焊球直径达100 μm.选用100,150,200,250和300 μm SAC (Sn-Ag-Cu)5种不同尺寸焊球的WLCSP芯片样品,经历相同的回流历程,对不同尺寸单个焊球进行剪切实验,从而得到焊球剪切强度和失效模式,抛光截面并测量了焊球金属间化合物(IMC)层的厚度.研究发现,随着焊球直径减小,IMC层厚度呈线性下降,经过回流历程后,IMC厚度随焊球直径增大而增厚,过薄和过厚的IMC层都减弱焊球剪切强度.经过回流后,界面断裂成为主要的断裂模式.     

Sn-9Zn/Cu焊点剪切强度及断口形貌分析

研究了BGA直径分别为750μm、1 000μm、1 300μm的Sn-9Zn/Cu焊点剪切强度及其变化规律。采用SEM和EDX对剪切断口进行观察和元素成分分析。试验结果表明,随着焊球直径的增大,焊点剪切强度先减小后增大。剪切断裂位置大部分位于钎料内部,局部位于界面化合物Cu5Zn8处。在相同的剪切高度与剪切速率下,随...     

The Shear Strength and Fracture Behavior of Sn-Ag-<Emphasis Type="Italic">x</Emphasis>Sb Solder Joints with Au/Ni-P/Cu UBM

This study investigates the effects of Sb addition on the shear strength and fracture behavior of Sn-Ag-based solders with Au/Ni-P/Cu underbump metallization (UBM) substrates. Sn-3Ag-xSb ternary alloy solder joints were prepared by adding 0 wt.% to 10 wt.% Sb to a Sn-3.5Ag alloy and joining them with Au/Ni-P/Cu UBM substrates. The solder joints were isothermally stored at 150°C for up to 625 h to study their microstructure and interfacial reaction with the UBM. Single-lap shear tests were conducted to evaluate the mechanical properties, thermal resistance, and failure behavior. The results show that UBM effectively suppressed intermetallic compound (IMC) formation and growth during isothermal storage. The Sb addition helped to refine the Ag₃Sn compounds, further improving the shear strength and thermal resistance of the solders. The fracture behavior evolved from solder mode toward the mixed mode and finally to the IMC mode with increasing added Sb and isothermal storage time. However, SnSb compounds were found in the solder with 10 wt.% Sb; they may cause mechanical degradation of the solder after long-term isothermal storage.     

Stability of Flip-Chip Interconnects Assembled with Al/Ni(V)/Cu-UBM and Eutectic Pb-Sn Solder During Exposure to High-Temperature Storage

The thermal stability of flip-chip solder joints made with trilayer Al/Ni(V)/Cu underbump metalization (UBM) and eutectic Pb-Sn solder connected to substrates with either electroless Ni(P)-immersion gold (ENIG) or Pb-Sn solder on Cu pad (Cu-SOP) surface finish was determined. The ENIG devices degraded more than 50 times faster than the Cu-SOP devices. Microstructural characterization of these joints using scanning and transmission electron microscopy and ion beam microscopy showed that electrical degradation of the ENIG devices was a direct result of the conversion of the as-deposited Ni(V) barrier UBM layer into a porous fine-grained V₃Sn-intermetallic compound (IMC). This conversion was driven by the Au layer in the ENIG surface finish. No such conversion was observed for the devices assembled on Cu-SOP surface finish substrates. A resistance degradation model is proposed. The model captures changes from a combination of phenomena including increased (1) intrinsic resistivity, (2) porosity, and (3) electron scattering at grain boundaries and surfaces. Finally, the results from this study were compared with results found in a number of published electromigration studies. This comparison indicates that degradation during current stressing in the Pb-Sn bump/ENIG system is in part due to current-crowding-induced Joule heating and the thermal gradients that result from localized Joule heating.     

不同加载速率对SAC/Cu焊点剪切强度的影响

通过对Sn0.3Ag0.7Cu/Cu和Sn3.0Ag0.5Cu/Cu焊点进行剪切测试结果表明:两种钎料焊点的剪切强度与加载速率有着明显的相关性,即焊点的剪切强度都随着加载速率的增加而增加。当加载速率为0.01 mm/s时,断裂模式为韧脆混合断裂,随着加载速率的增加,两种钎料焊点断口的韧窝数量不断增加,呈现韧性断裂特征,断口以韧窝为主。另外在相同加载速率下,Sn3.0Ag0.5Cu/Cu焊点断口的韧窝数量和分布情况都优于Sn0.3Ag0.7Cu/Cu焊点,即其韧性断裂的趋势更加明显,剪切强度更大。     

倒装焊器件尺寸参数对低k层及焊点的影响

当前。集成电路制造中低k介质与铜互连集成工艺的引入已经成为一种趋势,因此分析封装器件中低矗结构的可靠性是很有必要的。利用有限元软件分析了倒装焊器件的尺寸参数对低k层及焊点的影响。结果表明：减薄芯片,减小PI层厚度,增加焊点高度,增加焊盘高度,减小基板厚度能够缓解低k层上的最大等效应力;而减薄芯片,增加PI层厚度,增加焊点高度,减小焊盘高度,减小基板厚度能够降低焊点的等效塑性应变。     

Sn-9Zn/Cu焊点的结合强度与抗蠕变性能

基于前期进行的锡锌合金无铅钎料新型助焊剂研究,实验考查了其中二氯化锡活化剂含量水平对Sn-9Zn/Cu焊点剪切强度和常温抗剪切蠕变性能的影响.结果表明:就上述焊点强度而言,二氯化锡含量的影响与它对润湿性的影响[5]不尽一致,存在一个最佳的质量分数5%,超过该含量后尽管润湿性还继续提高,上述强度值却均会下降.在二氯化锡质量分数为5%时制得的焊点在剪切实验中呈良好韧性断裂模式.实验还显示:焊剂中较高的松香浓度明显有益于焊点的抗剪切蠕变强度,而对瞬时剪切强度影响不大.     

Effects of Joining Sequence on the Interfacial Reactions and Substrate Dissolution Behaviors in Ni/Solder/Cu Joints

The effects of the joining sequence on the interfacial reactions and substrate dissolution behaviors in Ni/solder/Cu joints were studied by using 500-μm (diameter) Sn-3.5Ag solder balls and substrates with a 375-μm (diameter) opening. Three distinct paths for the joining sequence were studied. In path I, a solder ball was first joined to the Cu substrate and then to the Ni substrate. In path II, a solder ball was joined to both the Cu and Ni substrates simultaneously. Path III had the opposite joining sequence to path I. The results of this study indicated that (Cu,Ni)₆Sn₅ was the predominant reaction product at both the Ni/solder and solder/Cu interfaces regardless of the joining sequence. However, the composition, morphology, and thickness of the (Cu,Ni)₆Sn₅ varied considerably with the different paths. The dissolution behaviors of Cu and Ni were also different. Dybkov’s dissolution kinetics and Cu-Ni-Sn isotherm data were utilized to rationalize these differences.     

Effect of Pd Thickness on the Interfacial Reaction and Shear Strength in Solder Joints Between Sn-3.0Ag-0.5Cu Solder and Electroless Nickel/Electroless Palladium/Immersion Gold (ENEPIG) Surface Finish

Intermetallic compound formation at the interface between Sn-3.0Ag-0.5Cu (SAC) solders and electroless nickel/electroless palladium/immersion gold (ENEPIG) surface finish and the mechanical strength of the solder joints were investigated at various Pd thicknesses (0 μm to 0.5 μm). The solder joints were fabricated on the ENEPIG surface finish with SAC solder via reflow soldering under various conditions. The (Cu,Ni)₆Sn₅ phase formed at the SAC/ENEPIG interface after reflow in all samples. When samples were reflowed at 260°C for 5 s, only (Cu,Ni)₆Sn₅ was observed at the solder interfaces in samples with Pd thicknesses of 0.05 μm or less. However, the (Pd,Ni)Sn₄ phase formed on (Cu,Ni)₆Sn₅ when the Pd thickness increased to 0.1 μm or greater. A thick and continuous (Pd,Ni)Sn₄ layer formed over the (Cu,Ni)₆Sn₅ layer, especially when the Pd thickness was 0.3 μm or greater. High-speed ball shear test results showed that the interfacial strengths of the SAC/ENEPIG solder joints decreased under high strain rate due to weak interfacial fracture between (Pd,Ni)Sn₄ and (Cu,Ni)₆Sn₅ interfaces when the Pd thickness was greater than 0.3 μm. In the samples reflowed at 260°C for 20 s, only (Cu,Ni)₆Sn₅ formed at the solder interfaces and the (Pd,Ni)Sn₄ phase was not observed in the solder interfaces, regardless of Pd thickness. The shear strength of the SAC/ENIG solder joints was the lowest of the joints, and the mechanical strength of the SAC/ENEPIG solder joints was enhanced as the Pd thickness increased to 0.1 μm and maintained a nearly constant value when the Pd thickness was greater than 0.1 μm. No adverse effect on the shear strength values was observed due to the interfacial fracture between (Pd,Ni)Sn₄ and (Cu,Ni)₆Sn₅ since the (Pd,Ni)Sn₄ phase was already separated from the (Cu,Ni)₆Sn₅ interface. These results indicate that the interfacial microstructures and mechanical strength of solder joints strongly depend on the Pd thickness and reflow conditions.