Cr应力缓释层对柔性Cu2ZnSn(S,Se)4薄膜太阳电池性能的影响

柔性Cu₂ZnSn(S,Se)₄(CZTSSe)薄膜太阳电池中的应力是阻碍其发展的一大瓶颈。采用磁控溅射法在柔性Ti衬底和Mo背电极之间引入不同厚度的Cr缓释层,研究其对CZTSSe薄膜应力的影响。结果表明,当Cr应力缓释层厚度为80 nm时,薄膜的结晶质量最好,电池具有最佳的光电性能,相比没有Cr应力缓释层存在的情况,薄膜的残余应力从-7.15 GPa降低至-3.61 GPa,电池的光电转换效率(PCE)从2.89%提高至4.65%,增加了60.9%。Cr应力缓释层的引入不会影响CZTSSe薄膜的晶体结构,相反可有效提高薄膜的结晶质量,降低薄膜的残余应力,最终提高电池的光电性能。     

Cu2ZnSnS4薄膜及其太阳电池的研究进展

Cu2ZnSnS4（CZTS）薄膜材料成本低廉且无毒,其电学性能主要由自身所含的缺陷决定,一般呈P型导电性。CZTS的禁带宽度为1．5eV左右,在可见光范围内的光学吸收系数一般都大于10^4cm^-1,所以其非常适合作为太阳电池的吸收层。经过国内外学者10余年的努力,CZTS太阳电池光电转换效率提升明显。相信不久的将来,CZTS薄膜电池必将得到广泛的应用。主要介绍了CZTS材料的制备方法、CZTS材料性能和CZTS太阳电池的研究进展。     

Cu(In,Ga)Se2太阳电池缓冲层ZnS薄膜性质及应用

在含有ZnSO4,SC(NH2)2,NH4OH的水溶液中采用CBD法沉积ZnS薄膜,XRF和热处理前后的XRD测试表明,ZnS沉积薄膜为立方相结构,薄膜含有非晶态的Zn(OH)2.光学透射谱测试表明,制备的薄膜透过率(λ＞500nm)约为90%,薄膜的禁带宽度约为3.51eV.ZnS薄膜沉积时间对Cu(In,Ga)Se2太阳电池影响显著,当薄膜沉积时间在25～35min时,电池的综合性能最好.对比了不同缓冲层的电池性能,采用CBD-CdS为缓冲层的电池转换效率、填充因子、开路电压稍高于CBD-ZnS为缓冲层的无镉电池,但无镉电池的短路电流密度高于前者,两者转换效率相差2%左右.ZnS可以作为CIGS电池的缓冲层,替代CdS,实现电池的无镉化.     

PbI2对钙钛矿薄膜及太阳电池性能的影响

碘化铅(PbI₂)是两步法制备钙钛矿薄膜最常使用的金属卤化物前驱体,精确控制PbI₂在钙钛矿薄膜中的含量和空间分布以及优化PbI₂薄膜的形貌结构对于制备高效稳定的太阳电池具有重要意义。探索了PbI₂的浓度和退火方式对钙钛矿薄膜及太阳电池性能的影响。研究发现,PbI₂溶液的浓度不仅决定钙钛矿薄膜中PbI₂的含量,也影响钙钛矿的晶粒尺寸、取向及光学吸收等性质,从而导致器件性能的改变,当钙钛矿薄膜表面分布约45%的PbI₂时器件性能更佳。此外,PbI₂的形貌、结晶性和孔隙度受退火方式的影响显著,与溶剂退火相比,通过短暂的1 min热退火制备的PbI₂薄膜更有利于减少钙钛矿表界面缺陷,提升器件的开路电压,最终使器件的基础光电转换效率(PCE)可以提升至20.89%。上述研究结果有助于进一步优化钙钛矿太阳电池制备工艺,提升器件性能。     

CdS/CuInSe2多晶薄膜太阳电池参数分析

利用Rothwarf模型,通过理论计算,讨论了多晶CdS/CuInSe2薄膜太阳电池的掺杂浓度、厚度和晶粒尺寸对太阳电池转换效率的影响.结果表明太阳电池的吸收层掺杂浓度存在一个最佳值;晶粒半径、太阳电池厚度对电池效率有显著影响,但达到一定值后,对效率的影响可以忽略.     

Cu(In,Ga)Se2太阳电池缓冲层ZnS薄膜性质及应用

在含有ZnSO4,SC(NH2)2,NH4OH的水溶液中采用CBD法沉积ZnS薄膜,XRF和热处理前后的XRD测试表明,ZnS沉积薄膜为立方相结构,薄膜含有非晶态的Zn(OH)2.光学透射谱测试表明,制备的薄膜透过率(λ＞500nm)约为90%,薄膜的禁带宽度约为3.51eV.ZnS薄膜沉积时间对Cu(In,Ga)Se2太阳电池影响显著,当薄膜沉积时间在25～35min时,电池的综合性能最好.对比了不同缓冲层的电池性能,采用CBD-CdS为缓冲层的电池转换效率、填充因子、开路电压稍高于CBD-ZnS为缓冲层的无镉电池,但无镉电池的短路电流密度高于前者,两者转换效率相差2%左右.ZnS可以作为CIGS电池的缓冲层,替代CdS,实现电池的无镉化.     

ZnO薄膜对于CdTe太阳电池的影响*

通过直流磁控溅射法在ITO薄膜上沉积的ZnO薄膜可以作为CdTe太阳电池的高阻层。通过XRD,可见-红外可见光谱仪和四探针法分析了制备薄膜的结构,光学和电学性质。通过紫外光电子能谱和X射线光电子能谱深度刻蚀法分析了ITO/ZnO和ZnO/CdS薄膜的界面性质。结果表明：ZnO 作为高阻层有良好的光学和电学性质。ZnO 薄膜降低了ITO和CdS之间的势垒。 制备出来电池有ZnO（没有ZnO）的能量转换效率和量子效率是12.77% (8.9%) 和 >90% (79%)。 进一步,通过AMPS-1D模拟分析了ZnO薄膜厚度对于CdTe太阳电池的影响。     

Cu(In,Ga)Se2材料成分对其电池性能的影响

利用三步共蒸发法制备铜铟硒薄膜太阳电池中的吸收层CIGS薄膜，采用多种测试手段，研究其成分比例与薄膜的电阻率、载流子浓度、表面粗糙度之间的关系电阻率为1e2～1e3Ω·cm之间，是Cu、III族元素、Se配比较为合适的区域载流子浓度在1e15～1e16cm-3范围内，薄膜表面粗糙度是随着Cu/(Ga+In)比呈下降趋势，Cu越多，表面越光滑，当Cu/(Ga+In)比超过1.25以后，变化趋势逐渐减弱. 当Cu/(Ga+In)比在1.0附近时，粗糙度处于30～60nm之间. 在上述范围内，研制出转换效率为12.1%的CIGS薄膜太阳电池.     

Cu(In,Ga)Se2材料成分对其电池性能的影响

利用三步共蒸发法制备铜铟硒薄膜太阳电池中的吸收层CIGS薄膜,采用多种测试手段,研究其成分比例与薄膜的电阻率、载流子浓度、表面粗糙度之间的关系.电阻率为102～103Ω·cm之间,是Cu、Ⅲ族元素、Se配比较为合适的区域.载流子浓度在1015～1016cm-3范围内,薄膜表面粗糙度是随着Cu/(Ga+In)比呈下降趋势,Cu越多,表面越光滑,当Cu/(Ga+In)比超过1.25以后,变化趋势逐渐减弱.当Cu/(Ga+In)比在1.0附近时,粗糙度处于30～60nm之间.在上述范围内,研制出转换效率为12.1%的CIGS薄膜太阳电池.     

Na-Bi共掺对Cu2ZnSnS4薄膜性能的影响

Cu₂ZnSnS₄(CZTS)薄膜因其元素储量高、较佳的光学带隙、优异的电学性能等优势而得到广泛关注。以硝酸铋为铋源、乙酸钠为钠源,采用溶胶-凝胶法制备Na-Bi掺杂的CZTS薄膜。研究Na-Bi共掺对CZTS薄膜的物相结构、微观形貌、光学性能以及光电性能的影响。结果表明,制备的薄膜为锌黄锡矿结构。Na和Bi元素的掺入对薄膜的微观形貌影响较大。固定Na的原子数分数为1%,随着Bi元素原子数分数的增加,薄膜的晶粒尺寸先增大后减小,均匀性逐渐提高,光敏性先增大后减小,光学带隙逐渐增大。当Na和Bi原子数分数分别为1%和0.5%时,薄膜的光学带隙为1.42 eV,光敏性最佳为1.17。     

原子层淀积技术应用于太阳电池的研究进展

原子层淀积(ALD)是一种先进的纳米级薄膜生长技术,在微电子和光电子领域有着广泛的应用前景,尤其在提高太阳电池的光电转换效率方面正发挥越来越大的作用,很可能成为下一代太阳电池工艺中的重要方法。文章综述了近年来ALD技术在太阳电池领域的应用研究进展,详细介绍了ALD技术应用在不同类型太阳电池的最新研究成果和存在的问题,并对其发展趋势进行了展望。     

薄膜太阳电池研究综述

薄膜太阳电池是最具发展潜力的新型能源之一,对缓解能源危机、保护人类生存环境提供了一种新的切实可行的方法。综述了目前国际上研究较多的几种薄膜太阳电池的最新进展,包括硅基薄膜(非晶硅、多晶硅)、多元化合物类(碲化镉、铜铟硒、铜铟镓硒、铜锌锡硫等)、有机薄膜太阳电池以及染料敏化太阳电池等。分析并总结了其在成本、转换效率等方面的优劣。为更有效地降低成本及提高电池效率,新技术、新结构的不断创新应该是未来薄膜太阳电池的发展趋势。     

Systematic Efficiency Improvement for Cu2ZnSn(S,Se)4 Solar Cells By Double Cation Incorporation with Cd and Ge

The performance of kesterite Cu₂ZnSn(S,Se)₄ (CZTSSe) solar cell is known to be severely limited by the nonradiative recombination near the heterojunction interface and within the bulk of the CZTSSe absorber resulting from abundant recombination centers and limited carrier collection efficiency. Herein, nonradiative recombination is simultaneously reduced by incorporating small amounts of Ge and Cd into the CZTSSe absorber. Incorporation of Ge effectively increases the p-type doping, thus successfully improving the bulk conductance and reducing the recombination in the CZTSSe bulk via enhanced quasi-Fermi level splitting, while the incorporation of Cd greatly reduces defects near the junction region, enabling larger depletion region width and better carrier collection efficiency. The combined effects of Cd and Ge incorporation give rise to systematic improvement in open-circuit voltage (V_OC), short-circuit current density (J_SC), and fill factor (FF), enabling a high conversion efficiency of 11.6%. This study highlights the multiple cation incorporation strategy for systematically manipulating the opto-electronic properties of kesterite materials, which may also be applicable to other semiconductors.     

Above 16% efficient sequentially grown Cu(In,Ga)(Se,S)2‐based solar cells with atomic layer deposited Zn(O,S) buffers

We report the development of Cd‐free buffers by atomic layer deposition for chalcopyrite‐based solar cells. Zn(O,S) buffer layers were prepared by atomic layer deposition on sequentially grown Cu(In,Ga)(Se,S)₂ absorbers from Bosch Solar CISTech GmbH. An externally certified efficiency of 16.1% together with an open circuit voltage of 612 mV were achieved on laboratory scale devices. Stability tests show that the behavior of the ALD‐Zn(O,S)‐buffered devices can be characterized as stable only showing a minor drift of the open circuit voltage and the fill factor. Copyright © 2015 John Wiley & Sons, Ltd.     

Wide Bandgap Sb2S3 Solar Cells

The wide bandgap Sb₂S₃ is considered to be one of the most promising absorber layers in single-junction solar cells and a suitable top-cell candidate for multi-junction (tandem) solar cells. However, compared to mature thin-film technologies, Sb₂S₃ based thin-film solar cells are still lagging behind in the power conversion efficiency race, and the highest of just 7.5% has been achieved to date in a sensitized single-junction structure. Furthermore, to break single junction solar cell based Shockley–Queisser (S–Q) limits, tandem devices with wide bandgap top-cells and low bandgap bottom-cells hold a high potential for efficient light conversion. Though matured and desirable bottom-cell candidates like silicon (Si) are available, the corresponding mature wide bandgap top-cell candidates are still lacking. Hence, a literature review based on Sb₂S₃ solar cells is urgently warranted. In this review, the progress and present status of Sb₂S₃ solar cells are summarized. An emphasis is placed mainly on the improvement of absorber quality and device performance. Moreover, the low-performance causes and possible overcoming mechanisms are also explained. Last but not least, the potential and feasibility of Sb₂S₃ in tandem devices are vividly discussed. In the end, several strategies and perspectives for future research are outlined.     

Low-cost TiO2/Sb2(S,Se)3 heterojunction thin film solar cell fabricated by sol-gel and chemical bath deposition

Low cost TiO₂/ Sb₂(S, Se)₃ heterojunction thin film solar cell are prepared successfully by using sol-gel and chemical bath deposition. At first, TiO₂ thin film is prepared on the ITO-coated glass substrate by a simple sol-gel and dip-coating method. Subsequently, Sb₂(S, Se)₃ film is fabricated on TiO₂ by selenizing the Sb₂S₃ film prepared by chemical bath deposition (CBD). The heat-treated process of TiO₂ and Sb₂(S, Se)₃ films has been discussed, respectively. After being heat-treated at 550 °C for TiO₂ and 290 °C for Sb₂(S, Se)₃ films, the photovoltaic devices are completed with the conductive graphite as electrode. The J-V characteristics of TiO₂/ Sb₂(S, Se)₃ solar cell are measured and the open circuit voltage (V_oc) of this cell is about 350 mV.