8GHz带有RC稳定网络的AlGaN/GaN HEMTs内匹配功率合成放大器的设计

设计了工作在8GHz的基于AIGaN/GaN HEMTs的内匹配功率合成放大器.输入和输出匹配电路制作在0.381mm厚的氧化铝陶瓷基片上,为了提高整个电路的稳定因子K,在电路输入端增加了片上RC有损网络.在8GHz测出连续波ldB压缩点时的输出功率为PldB=43dBm(20W),线性增益7.3dB,最大PAE为38.1%,合成效率达到70.6%.     

8GHz带有RC稳定网络的AIGaN/GaN HEMTs内匹配功率合成放大器的设计

设计了工作在8GHz的基于AIGaN/GaN HEMTs的内匹配功率合成放大器.输入和输出匹配电路制作在0.381mm厚的氧化铝陶瓷基片上,为了提高整个电路的稳定因子K,在电路输入端增加了片上RC有损网络.在8GHz测出连续波ldB压缩点时的输出功率为PldB=43dBm(20W),线性增益7.3dB,最大PAE为38.1%,合成效率达到70.6%.     

高性能1mm AlGaN/GaN功率HEMTs研制

报道了基于蓝宝石衬底的高性能1mm AlGaN/GaN HEMTs功率器件.为了提高微波功率器件性能，采用新的欧姆接触和新型空气桥方案．测试表明，器件电流密度为0.784A/mm，跨导197mS/mm，击穿电压大于40V，截止态漏电较小，1mm栅宽器件的单位截止频率达到20GHz，最大振荡频率为28GHz，功率增益为11dB，功率密度为1.2W/mm,PAE为32%,两端口阻抗特性显示了在微波应用中的良好潜力．     

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at V _ds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for V _ds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.     

14W X波段AlGaN/GaN HEMT功率MMIC

报道了研制的SiC衬底AIGaN/GaN HEMT微带结构微波功率MMIC,芯片工艺采用凹槽栅场板结构提高AlGaN/GaNHEMTs的微波功率特性.S参数测试结果表明AlGaN/GaN HEMTs的频率特性随器件的工作电压变化显著.研制的该2级功率MMIC在9～11GHz带内30V工作,输出功率大于10W,功率增益大于12dB,带内峰值输出功率达到14.7W,功率增益为13.7dB,功率附加效率为23%,该芯片尺寸仅为2.0mm×1.1mm.与已发表的X波段AlGaN/GaN HEMT功率MMIC研制结果相比,本项工作在单位毫米栅宽输出功率和芯片单位面积输出功率方面具有优势.     

A 24 W Ku band GaN based power amplifier with 9.1 dB linear gain

A Ku-band power amplifier is successfully developed with a single chip 4.8 mm AlGaN/GaN high electron mobility transistors (HEMTs). The AlGaN/GaN HEMTs device, achieved by E-beam lithography г-gate process, exhibited a gate-drain reverse breakdown voltage of larger than 100 V, a cutoff frequency of f_T=30 GHz and a maximum available gain of 13 dB at 14 GHz. The pulsed condition (100 μs pulse period and 10% duty cycle) was used to test the power characteristic of the power amplifier. At the frequency of 13.9 GHz, the developed GaN HEMTs power amplifier delivers a 43.8 dBm (24 W) saturated output power with 9.1 dB linear gain and 34.6% maximum power-added efficiency (PAE) with a drain voltage of 30 V. To our best knowledge, it is the state-of-the-art result ever reported for internal-matched 4.8 mm single chip GaN HEMTs power amplifier at Ku-band.     

A Ku band internally matched high power GaN HEMT amplifier with over 30%of PAE

正We report a high power Ku band internally matched power amplifier(IMPA) with high power added efficiency(PAE) using 0.3μm AlGaN/GaN high electron mobility transistors(HEMTs) on 6H-SiC substrate.The internal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm.To improve the bandwidth of the amplifier,a T type pre-matching network is used at the input and output circuits,respectively.After optimization by a three-dimensional electromagnetic(3D-EM) simulator,the amplifier demonstrates a maximum output power of 42.5 dBm(17.8 W),PAE of 30%to 36.4%and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10%duty cycle pulse condition when operated at V_(ds) = 30 V and V_(gs)=—4 V.At such a power level and PAE,the amplifier exhibits a power density of 4.45 W/mm.     

Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE

We report AlGaN-GaN high electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on SiC substrates with excellent microwave power and efficiency performance. The GaN buffers in these samples were doped with carbon to make them insulating. To reduce gate leakage, a thin silicon nitride film was deposited on the AlGaN surface by chemical vapor deposition. At 4 GHz, an output power density of 6.6 W/mm was obtained with 57% power-added efficiency (PAE) and a gain of 10 dB at a drain bias of 35 V. This is the highest PAE reported until now at 4 GHz in AlGaN-GaN HEMTs grown by MBE. At 10 GHz, we measured an output power density of 7.3 W/mm with a PAE of 36% and gain of 7.6 dB at 40-V drain bias.     

8W AlGaN/GaN HEMT功率器件的研制

报道了基于国产衬底以及国产外延的AlGaN/GaN HEMT X波段功率器件的研究进展.利用国产衬底以及外延材料,优化了器件栅场板的结构,研制成功栅长0.35μm,栅宽为lmm的微波功率器件.该器件输出电流密度达到0.83A/mm,击穿电压大于100V,跨导为236mS/mm,截止频率(fT)达到30GHz,最大振荡频率(fmax)为32GHz,8GHz下在片进行连续波测试,漏端电压为40V时测试得到功率增益4.9dB,输出功率达8W,功率附加效率(PAE)为45%.     

Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates

Reports on the CW power performance at 20 and 30 GHz of 0.25 /spl mu/m /spl times/ 100 /spl mu/m AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (f/sub T/) of 65 GHz, and maximum frequency of oscillation (f/sub max/) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-/spl mu/m gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.     

30-W/mm GaN HEMTs by field plate optimization

GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance. Great enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltages. When biased at 120 V, a continuous wave output power density of 32.2 W/mm and power-added efficiency (PAE) of 54.8% at 4 GHz were obtained using devices with dimensions of 0.55/spl times/246 /spl mu/m/sup 2/ and a field-plate length of 1.1 /spl mu/m. Devices with a shorter field plate of 0.9 /spl mu/m also generated 30.6 W/mm with 49.6% PAE at 8 GHz. Such ultrahigh power densities are a dramatic improvement over the 10-12 W/mm values attained by conventional gate GaN-based HEMTs.     

High-power AlGaN/GaN HEMTs for Ka-band applications

We report on the fabrication and high-frequency characterization of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). In devices with a gate length of 160 nm, a record power density of 10.5 W/mm with 34% power added efficiency (PAE) has been measured at 40 GHz in MOCVD-grown HEMTs biased at V/sub DS/=30 V. Under similar bias conditions, more than 8.6 W/mm, with 32% PAE, were obtained on the MBE-grown sample. The dependence of output power, gain, and PAE on gate and drain voltages, and frequency have also been analyzed.     

4 W/mm蓝宝石衬底AlGaN/GaN HEMT

报道了利用南京电子器件研究所生长的蓝宝石衬底AlGaN/GaN异质结材料制作的HEMT,器件功率输出密度达4W/mm。通过材料结构及生长条件的优化,利用MOCVD技术获得了二维电子气(2DEG)面密度为0.97×1013cm-2、迁移率为1000cm2/Vs的AlGaN/GaN异质结构材料,用此材料完成了栅长1μm、栅宽200μm AlGaN/GaN HEMT器件的研制。小信号测试表明器件的fT为17GHz、最高振荡频率fmax为40GHz;负载牵引测试得到2GHz下器件的饱和输出功率密度为4.04W/mm。     

蓝宝石衬底上Ka波段AlN/GaN高电子迁移率晶体管

We report the DC and RF characteristics of AlN/GaN high electron mobility transistors(HEMTs) with the gate length of 100 nm on sapphire substrates. The device exhibits a maximum drain current density of 1.29 A/mm and a peak transconductance of 440 m S/mm. A current gain cutoff frequency and a maximum oscillation frequency of 119 GHz and 155 GHz have been obtained, respectively. Furthermore, the large signal load pull characteristics of the AlN/GaN HEMTs were measured at 29 GHz. An output power density of 429 m W/mm has been demonstrated at a drain bias of 10 V. To the authors’ best knowledge, this is the earliest demonstration of power density at the Ka band for Al N/Ga N HEMTs in the domestic, and also a high frequency of load-pull measurements for Al N/Ga N HEMTs.     

SiN钝化前的NF3等离子体处理对AlGaN/GaN HEMT性能的影响

研究了SiN钝化前利用感应耦合等离子体（ICP）对AlGaN/GaN HEMT表面进行NF3等离子体处理对器件性能的影响. 结果表明,运用低能量的NF3等离子体处理钝化前的AlGaN/GaN HEMT表面能有效抑制器件电流崩塌,而器件直流及微波小信号特性则未受影响. 微波功率测试表明,经过6min NF3等离子体处理的AlGaN/GaN HEMT在2GHz, 30V工作电压下达到6.15W/mm的输出功率密度,而未经过处理的器件只达到1.82W/mm的输出功率密度.     

AlGaN/GaN HEMT High Power Densities on $hbox{SiC/} hbox{SiO}_{2}$/poly-SiC Substrates

In this letter, successful operation at 10 GHz of T-gate HEMTs on epitaxial structures grown by metal–organic chemical vapor deposition (MOCVD) or MBE on composite substrates is demonstrated. The used device fabrication process is very similar to the process used on monocrystalline SiC substrate. High power density was measured on both epimaterials at 10 GHz. The best value is an output power density of 5.06 W/mm associated to a power-added efficiency (PAE) of 34.7% and a linear gain of 11.8 dB at $V_{rm DS} = hbox{30} hbox{V}$ for the components based on MOCVD-grown material. The output power density is 3.58 W/mm with a maximum PAE of 25% and a linear gain around 15 dB at $V_{rm DS} = hbox{40} hbox{V}$ for the MBE-grown material.      

2.1 A/mm current density AlGaN/GaN HEMT

The electrical performance of high current density AlGaN/GaN HEMTs is reported. 2 /spl times/ 75 /spl mu/m /spl times/ 0.7 /spl mu/m devices grown on sapphire substrates showed current densities up to 2.1 A/mm under 200 ns pulse condition. RF power measurements at 8 GHz and V/sub DS/=15 V exhibited a saturated output power of 3.66 W/mm with a 47.8% peak PAE.     

High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC

High electron mobility transistors (HEMTs) were fabricated from AlGaN/GaN on semi-insulating SiC substrates with excellent performance and high yield. The devices had 0.14 /spl mu/m T-gates with a total width of 300 /spl mu/m. Extrinsic, unpassivated peak performance values for these HEMTs include transconductance of 338 mS/mm, maximum drain current of 1481 mA/mm, unity current gain cutoff frequency of 91 GHz, and maximum frequency of oscillation of 122 GHz. Saturated CW power measurements of these devices at 10 GHz result in 4.6 W/mm with PAE at 46% when optimized for power and 3.0 W/mm with PAE at 65% when optimized for efficiency.     

蓝宝石衬底上槽栅型X波段增强型AlGaN/GaN HEMT

研制了一款X波段增强型AlGaN/GaN高电子迁移率晶体管(HEMT)。在3英寸(1英寸=2.54 cm)蓝宝石衬底上采用低损伤栅凹槽刻蚀技术制备了栅长为0.3μm的增强型AlGaN/GaN HEMT。所制备的增强型器件的阈值电压为0.42 V,最大跨导为401 mS/mm,导通电阻为2.7Ω·mm。器件的电流增益截止频率和最高振荡频率分别为36.1和65.2 GHz。在10 GHz下进行微波测试,增强型AlGaN/GaN HEMT的最大输出功率密度达到5.76 W/mm,最大功率附加效率为49.1%。在同一材料上制备的耗尽型器件最大输出功率密度和最大功率附加效率分别为6.16 W/mm和50.2%。增强型器件的射频特性可与在同一晶圆上制备的耗尽型器件相比拟。     

High-power microwave GaN/AlGaN HEMTs on semi-insulating siliconcarbide substrates

Record performance of high-power GaN/Al_0.14-Ga_0.86 N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates is reported. Devices of 0.125-0.25 mm gate periphery show high CW power densities between 5.3 and 6.9 W/mm, with a typical power-added efficiency (PAE) of 35.4% and an associated gain of 9.2 dB at 10 GHz. High-electron mobility transistors with 1.5-mm gate widths (12×125 μm), measured on-wafer, exhibit a total output power of 3.9 W CW (2.6 W/mm) at 10 GHz with a PAE of 29% and an associated gain of 10 dB at the -2 dB compression point. A 3-mm HEMT, packaged with a hybrid matching circuit, demonstrated 9.1 W CW at 7.4 GHz with a PAE of 29.6% and a gain of 7.1 dB. These data represent the highest power density, total power, and associated gain demonstrated for a III-nitride HEMT under RF drive