Frequency and Voltage Dependent Dielectric Properties of Ni-doped Ba0.6Sr0.4TiO3 Thin Films

Highly (100) preferred undoped and 1–5% Ni-doped Ba_1–xSr_xTiO₃ (BST) thin films were deposited onto MgO (100) single crystal substrate at 750°C using pulsed laser deposition. BST thin film-based interdigital capacitors (IDC) were prepared by standard photolithography process. The microwave properties of BST films were measured at 10 GHz. Ni-doped BST films showed better dielectric properties by exhibiting improved dielectric Q while retaining an appropriate capacitance tuning compared to undoped BST films. 1% Ni-doped BST film showed the maximum figure of merit of 2896.1. It is suggested that 1 mol% Ni doped BST film is an effective candidate for high performance tunable device applications.     

Microwave Characterization of BST Thin Films on LAO Interdigital Capacitor

The dielectric properties of (Ba_0.5Sr_0.5)TiO₃ (BST) thin films on LaAlO₃ (LAO) single crystals were studied over a wide frequency range. The samples with interdigital electrodes were prepared by microelectronic processing. The dielectric characterizations were carried out in the following steps: 1) the standard calibration of the instrument, 2) the removal of parasitic capacitance and the extraction of the capacitance of the interdigital capacitor (IDC) and 3) the extraction of the dielectric permittivity (?) of BST. It was found that ? of BST has a constant value (about 400) from 50 MHz to 2 GHz; at higher frequencies, ? gradually decreases. The BST interdigital capacitors exhibited good dielectric tunability.     

Processing Effects on the Microstructure and Dielectric Properties of Barium Strontium Titanate (BST) Ceramics

Barium Strontium Titanate (BST) ferroelectric thick films have been investigated as potential candidates for use in frequency agile microwave circuit devices. Powder processing techniques such as screen-printing have been used to make BST thick films. However, due to the interactions between the BST and substrates such as alumina, the sintering temperatures for the BST thick films are limited and the resultant films are difficult to achieve full densification. In this paper, the effects of different powder processing conditions (calcination, sintering temperature and time) on the sintering behaviour and dielectric properties of the BST ceramics have been investigated. The dielectric behaviour of the ceramics has been correlated with composition and microstructural features such as chemical homogeneity, grain size and domain wall movements.     

钛酸锶钡铁电薄膜的制备与性能优化研究

综述了目前钛酸锶钡(BST)铁电薄膜最为常用的4种制备工艺:磁控溅射法(Magnetron Sputtering)、脉冲激光沉积法(PLD)、溶胶-凝胶法(Sol-gel)、金属有机物化学气相沉积法(MOCVD)。并介绍了在优化BST铁电薄膜性能方面所作的工作和取得的成果。     

Characterization of Crystalline Carbon Nitride Films Deposited on Si and Si3N4/Si Substrate by RF Magnetron Sputtering System with DC Bias

Crystalline carbon nitride films were deposited on Si and Si₃N₄/Si substrate by reactive RF magnetron sputtering system with chamber heating and DC bias. The deposited films showed -C₃N₄, -C₃N₄ and lonsdaleite phase by XRD, XPS and FTIR. The crystalline morphology was found to gave a hexagonal structure, which has theoretical unit cell of carbon nitride observed in SEM photographs. When nitrogen gas ratio is 70%, RF power is 300 W and DC bias is –80 V, the growth rate of carbon nitride film on Si₃N₄ substrate is 2.2 m/hr, which is a relatively high growth rate compared with those in previously reported papers. The deposited films have thermally stable properties in the range of 650_C to 1,400_C.     

Pulsed Laser Deposition of Ba0.6Sr0.4TiO3 Thin Films and Their Optical Properties

ABSTRACT

Barium strontium titanate [Ba_0.6Sr_0.4TiO₃ or BST (60/40)] thin films were deposited on MgO (100) substrates using pulsed laser deposition. X-ray diffraction (XRD) measurements revealed that the BST thin films had epitaxially grown on the MgO (100) substrates. The surface morphology of the thin films was observed using an atomic force microscope and the grain size was found to be about 100–150 nm. The surface roughness was around 4.9 nm for a 250 nm thick film. The optical transmittance of the BST thin film was measured using a transmission mode ellipsometer. The BST/MgO configuration was highly transparent in the visible region. The optical band gap energy of the BST film, calculated by applying the Tauc relation, was 3.56 eV. Optical waveguide characteristics of the BST (60/40) thin film were determined using a prism coupler. The electro-optic (E-O) properties were measured at 632.8 nm wavelength using a phase modulation detection method. The BST film exhibited a predominately quadratic E-O behavior and the quadratic E-O coefficient was found to be 0.58 × 10^{? 17} m²/V².     

基片温度对Fe-N化合物薄膜制备及磁性能的影响

用X射线衍射仪和振动样品磁强计研究了双离子束溅射法制备的Fe—N薄膜的相组成和磁性能。结果表明,基片温度对不同基片上制得的薄膜的结构和磁性能有显著影响。基片温度为250℃和300℃时,在(111)硅片基片上制得无晶粒择优取向的单—γ″—Fe4N相;基片温度为160℃时,可在玻璃基片上制得具有(100)面晶粒取向的单一γ′—Fe4N相薄膜。薄膜磁性测量表明,与无晶粒择优取向的γ′—Fe4N相比较,具有(100)面晶粒取向的γ′—Fe4N相的矫顽力较低,易达到磁饱和,但二者的饱和磁化强度基本一致。     

变压器直流偏磁及其与接地电阻关系的研究

Recently years,UHVDC transmission system is paid more attention to in the field of China’s power system.It takes key part in the China electrical power development stratagem.But,many problems are caused by UHVDC system,such as DC bias,corrosion of metal underground and so on.DC bias is harm to the transformers nearby UHVDC grounding polar.In this paper,the influences of DC grounding current on transformer are introduced and some suggestions of DC bias solution were provided.And,the relationship between UHVDC Grounding Current and grounding Resistance of Substation was analyzed.Firstly,two-part network circuit was used to equivalent the grounding circuit.Then,an analysis of rules was done between DC bias current and grounding resistance.Finally,the conclusion is given that DC bias current rises fast as DC grounding resistance or AC grounding resistance rises.It drops when resistance of AC transmission line or interaction resistance between DC grounding system and AC grounding system rises.Decreasing AC grounding resistance and DC grounding resistance is important to restrain DC bias current.Increasing resistance of AC transmission line such as adding resistance into transformer neutral-point grounding is a useful way to limit DC bias current.     

Leakage Current Measurements of STO and BST Thin Films Interpreted by the "Dead" Layer Model

Electrical properties of Strontium-Titanate (STO) and Barium-Strontium-Titanate (BST) thin films capacitors were investigated. The STO films were fabricated by chemical solution deposition (CSD) with thickness between 50 and 150 nm, while the BST films were deposited by metal organic chemical vapor deposition (MOCVD) with thickness between 20 and 110 nm. All films were grown on platinized and oxidized silicon wafers. As top electrodes platinum (Pt) was deposited on top of the ceramic film by sputtering. The electrode size varied between 8*10 m 3 to 1 mm 2 . The leakage current measurements were performed at different temperatures ranging from 15 to 200C and the applied voltage varied between 0 and - 4 V. Capacitance was measured at RT up to - 3 V bias at 1 kHz and 50 mV oscillation voltage. The main results are: The effective barrier heights extracted from the temperature dependence of leakage current are about 1.35 eV for STO and 0.94 eV for BST for the temperature region >100C. The field dependencies of the leakage current show almost perfect linear behavior in a "Schottky" plot for BST while STO reveals 2 separated Schottky regions. The permittivity extracted from the field dependence using the simple thermionic emission model with Schottky lowering results in rather improbable values of the effective Richardson constant A * and unphysical values of the relative optical permittivity, l r, opt <1. The use of a modified model with low permittivity interface layers ("dead layers"), as suggested by the thickness dependence of the inverse capacitance, solved these difficulties. The parameters extracted from fits of this model are discussed.     

变压器直流偏磁的仿真研究及限制措施

对高压直流输电系统接地极电流对中性点接地变压器的影响进行了研究。以实际工程中广泛应用的Jiles-Atherton铁磁磁滞原理为基础建立变压器模型进行电力变压器直流偏磁的仿真研究,结果较好地反映了励磁电流波形和幅值的变化对变压器的不利影响;提出了在变压器中性线串联电容器并设置其旁路电路等措施,分析说明该措施能有效地限制直流偏磁现象。文中介绍的模型和措施可分析处理变压器直流偏磁导致的铁耗、铜耗以及噪声增大等问题,实例的仿真结果证明了该方法的正确性。     

直流偏磁对变压器保护的影响及直流偏磁保护改进

随着高压直流输电工程的建设,直流系统对周边电力设备的影响逐步受到关注.当直流系统单极大地运行或直流控制系统出现异常时,可能产生较大的直流电流注入相邻变压器.此时变压器可能产生直流偏磁.文中通过对变压器几种磁饱和特性的对比指出了直流偏磁的特殊性,结合现场波形特征分析直流偏磁及常见的偏磁抑制装置对保护设备的影响,指出现有直...     

Planar and Parallel Dielectric Properties of Compositionally Graded (Ba,Sr)TiO3 Thin Films for Tunable Microwave Applications

Compositionally graded (Ba_x,Sr_{1 ? x})TiO₃ [BST] ferroelectric thin films have been received much attention in graded ferroelectric devices due to their unique properties, such as large pyroelectric coefficients, large polarization offset and small temperature coefficient of dielectric constant for microwave tunable devices. Compositionally graded BST thin films were deposited epitaxially on LaAlO₃ [LAO] and Nb-doped SrTiO₃ [STO:Nb] substrates by pulsed laser deposition. The planar and parallel dielectric properties of compositionally graded BST epitaxial thin films ware investigated in the frequency ranges of 100 Hz ～ 1 MHz as a function of the direction of the composition gradient with respect to the substrate at room temperature. The dielectric properties of the graded BST films depended strongly on the direction of the composition gradient with respect to the substrate. The graded ST → BT films grown on LAO and STO:Nb substrates exhibited a excellent dielectric properties than the graded BT → ST films.     

Investigation of the effects of milling ceramic targets on the optical and electrical properties of BST thin films deposited by RF sputtering

Abstract

The RF sputtering method was utilized to deposit thin films of Ba_1-xSr_xTiO₃ (BST). The targets utilized in these experiments were prepared from ceramic powders with different particle size. The goal of this work is to examine whether the particle size distribution of the target can affect the properties of the thin films fabricated by the sputtering method. The Atomic Force Microscope (AFM) was used to examine the grain size in the thin films. The composition of the thin films and the bulk materials were examined by Fourier Transform Infrared (FTIR) spectroscopy. The dielectric properties of the thin films were measured and compared to its bulk counterparts. It was found that on lattice matched electrodes of SrRuO₃ on LaAlO₃ substrates, the thin films deposited from ceramic targets manufactured from ball-milled powders had finer grain size than those deposited from targets made from unmilled powders. However, this phenomenon was not observed in the case of polycrystalline films deposited on platinized silicon wafers.     

交直流线路同塔输电对换流变直流偏磁的影响

华东地区输电线路走廊资源紧缺,为了充分利用架空线路走廊,将出现特高压直流线路与交流线路同塔架设的情况.根据规划的宁东-绍兴±800kV特高压直流主回路参数和华东地区交直流同塔线路数据,采用EMTDC建立了交直流输电系统的仿真模型.计算了交流线路输送功率、直流系统运行工况以及同塔段位置对直流线路工频感应分量的影响,给出了工频感应分量沿直流线路的分布规律.研究结果表明,由于直流线路上的工频感应分量与直流额定电压和电流相比很小,故对直流滤波器、平波电抗器和换流阀的参数选择影响不大,而工频感应分量所引起的换流变压器(简称换流变)阀侧直流偏磁电流则会对换流变正常运行产生一定程度的不利影响.最后,根据换流变可承受直流偏磁电流的能力,给出了可能的同塔架设的长度,并提出了限制直流偏磁电流的措施.     

Annealing Effects on Structural and Dielectric Properties of Tunable BZT Thin Films

Ba(Zr, Ti)O₃ thin films have attracted great attention in recent years for their potential use in DRAMs and MCMs due to their high dielectric constant and relatively low leakage current. However, their tunable dielectric properties were rarely investigated and the corresponding potential for tunable microwave applications was seldom reported. In this paper, we present the tunable dielectric behavior of BZT thin films deposited by RF magnetron sputtering from a Ba(Zr_0.3Ti_0.7)O₃ ceramic target on MgO single crystal substrates. The composition, thickness and crystallinity of the thin films were analyzed by Rutherford backscattering (RBS), scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The dielectric constant and loss tangent were measured as a function of electric field (0–7 kV/mm) and temperature (–140 to +160°C) at frequencies up to 1 MHz, using interdigital capacitors (IDC) with Au electrodes on thin films. By optimizing the preparation process, a tunability {defined as = [ (0) – (E_max)]/ (0)} of 76% at E_max = 7 kV/mm and a low loss tangent of 0.0078 can be achieved. In addition, the influence of annealing temperature on the dielectric properties of the thin films is also discussed.     

VO2薄膜制备及掺杂研究进展

二氧化钒(VO2)是一种性能优异的功能材料,在68℃左右发生金属态-半导体态的转变,其光学和电学性能发生突变,在热电开关、光存储介质和激光防护方面有广泛的应用前景。但是由于钒氧体系十分复杂,给制备高质量的VO2带来了困难。人们做了许多工作来研究VO2的结构性能,使用不同的工艺方法制备VO2以及通过掺杂降低其相变温度。本文通过一些有代表性的VO2的研究成果,从制备工艺和元素掺杂方面做了介绍。     

大型电力变压器直流偏磁试验研究

以实例阐述了单相电力变压器的试验方法,研究了变压器在额定电压情况下发生直流偏磁时,励磁电流、运行噪声和振动等特性的变化。     

变压器组直流偏磁及其内部特性的研究

介绍了变压器组直流偏磁的机理及其内部特性。     

直流偏磁对变压器振动噪声的影响

取向硅钢片的磁致伸缩特性是引起变压器振动噪声的主要原因,并且直流偏磁在很大程度上加剧了变压器的振动噪声。本文首先测量了取向硅钢在不同磁密下的磁致伸缩蝴蝶曲线族,研究了轧制方向(RD)和垂直轧制方向(TD)磁致伸缩的特性,同时研究了直流偏磁对磁致伸缩特性的影响,然后用平均磁致伸缩曲线来模拟取向硅钢片的磁致伸缩特性,并将其应用到直流偏磁条件下一台160k V·A干式变压器空载振动的有限元计算。最后实验测量了直流偏磁条件下变压器铁心不同位置的空载振动,以及随着直流偏磁的增大,噪声声压级的值。综合有限元计算和实验测得的空载振动噪声值,分析了直流偏磁对变压器振动噪声的影响。     

MnO_2掺杂对锂/氟化碳电池性能的影响

通过球磨法制备了二氧化锰(MnO_2)掺杂的氟化石墨(CF_x)复合材料;以复合材料为正极、锂带为负极,制备了1 Ah方形软包装锂/氟化碳(Li/CF_x)电池。探讨掺杂比例对Li/CF_x电池电化学性能的影响。与纯CF_x相比,掺杂30%MnO_2的电池以0.1 C倍率放电,低波电压和平台电压分别为2.360 V、2.463 V;以0.5 C、1.0 C倍率放电,低波电压分别提高约0.4 V、0.5 V。掺杂MnO_2可改善Li/CF_x电池的电压滞后现象,并提高放电平台电压。