Point defects reactions in ion irradiated SiC

The defects produced in 4H-SiC epitaxial layers by irradiation with 800 keV C⁺ were characterized by Low Temperature Photoluminescence. Ion beam irradiation induces the formation of some sharp lines in the wavelength range 428-441 nm of the photoluminescence spectra, that are typically known as “alphabet lines”. These photoluminescence features are due to the recombination of excitons at structural defects. The photoluminescence results allow to single out two groups of peaks: the P₁ lines (e-f-g) and the P₂ lines (a-b-c-d), that exhibit a different trend with the ion fluence. The P₁ group intensity increases with fluence and tends to reach a saturation value at high fluence. The P₂ group yield, instead, exhibits a threshold at low fluence and then increases toward a saturation. Subsequent UV-laser irradiation decreases the intensity of the P₂ lines related to a change in the structural configuration of the associated defects.     

Physical and thermal properties of 8 MeV electron beam irradiated HPMC polymer films

Microstructural modification in hydroxypropyl methylcellulose (HPMC) polymer films induced by electron irradiation is studied. Irradiation was performed in air at room temperature using a 8 MeV electron accelerator at doses of 25, 50, 75 and 100 kGy. Irradiation can be used to crosslink or degrade the desired component or to fix the polymer morphology. Changes in microstructural parameters, crystallinity and thermal properties in virgin and irradiated HPMC films have been studied using wide angle X-ray scattering data and differential scanning calorimetry. The heat of fusion and the degree of crystallinity are found to be highest for unirradiated HPMC and the crystallite size is larger in virgin HPMC films.     

中子辐照注量对单晶硅中缺陷退火行为的影响

用正电子湮没寿命和多普勒加宽测量研究了不同注量中子辐照的氩气氛区熔单晶硅中缺陷的退火行为，发现不同中子注量辐照时，辐照致空位型缺陷的退火行为十分类似，并均在５５０℃时退火消除；但辐照致双空位浓度、二次双空位和四空位型缺陷的产生、浓度和消除温度很不相同。简单陷阱模型不适用于５００℃以下退火的离中子注量辐照的单晶硅，但能部分适用于中等注量辐照的单晶硅。     

裂变快中子辐照在GaAs中产生缺陷的正电子湮没研究

采用自电子湮没寿命测量方法研究了注量为６．５×１０＾１５／ｃｍ＾２和１．４×１０＾１４／ｃｍ＾２，Ｅｎ≥１ＭｅＶ的裂变中子辐照在掺Ｓｉ，Ｎ型单晶ＧａＡｓ产物的缺陷，此辐照在ＧａＡｓ中产生单空位和双空位缺限，缺陷浓度于比于辐照注量，高温退火产生三空位缺陷及小空位团，单空位，双空位和三空位缺陷的退火温度分别为２５０，４５０，６５０℃。     

5.0MeV和9.5MeV快中子辐照在GaAs中产生的辐射损伤的正电子湮没研究

采用正电子湮没寿命测量方法研究了５．０ＭｅＶ和９．５ＭｅＶ快中子辐照在ＧａＡｓ中产生的辐射损伤，实验结果表明１０＾１１－１０＾１２ｎ／ｃｍ＾２注量的中子辐照只产生单空位缺陷１０＾１３ｎ／ｃｍ＾３注量的中子辐照产生单空位和双空位缺陷，１０＾１２ｎ／ｃｍ＾２注量的９．５ＭｅＶ中子辐照的ＧａＡｓ经４５０－６２０℃退火产生三空位缺陷，产生的缺陷浓度随中子能量和注量的增大而增大，但缺陷产生率对中子注量更灵敏     

纯铝中氢致缺陷的正电子湮没和透射电镜研究

用正电子湮没技术和透射电镜研究了退火和变形纯铝中的氢致缺陷。光学显微镜和透射电镜观察结果表明充氢可以在退火铝中引入气泡、位错等．纯度较低的样品比较容易形成氢致缺陷．说明铝中杂质是氢致缺陷的成核中心。正电子湮没结果表明．随着充氮量的增加．退火铝的平均正电子寿命无显著变化．变形铝的平均正电子湮没寿命有所缩短：这一结果从实验上证实了充入铝中的氢以质子形式填充于缺陷中。屏蔽了缺陷对正电子的吸引或使缺陷内的正电子寿命下降．从而降低了正电子寿命方法对缺陷的敏感性．     

Modification of the mesoscopic structure in neutron irradiated EPDM viewed through positron annihilation spectroscopy and dynamic mechanical analysis

This article focuses on the study of the mesoscopic structure in neutron irradiated EPDM both from experimental and theoretical points of view. In this work we reveal completely the modification of the mesostructure of the EPDM due to neutron irradiation, resolving volume fraction, size and distribution of the crystalline zones as a function of the irradiation dose. Positron annihilation spectroscopy and dynamic mechanical analysis techniques are applied and the results are discussed by means of new theoretical results for describing the interaction process between the crystals and amorphous zones in EPDM.     

Recovery of neutron-induced damage of SiC by thermal annealing up to 1400 °C

Recovery of the specimen length of neutron-irradiated SiC was observed using a precision dilatometer. The specimens were heated isothermally and isochronally. The accuracy of length measurement at high temperature using the dilatometer was compared with that of length measurement at room temperature using a micrometer. It was clarified that the dilatometer method showed high accuracy and stability. The dilatometer method was applied to observe length recovery by isothermal annealing at 1200 °C of the neutron-irradiated SiC, and at least two recovery rates were clarified.     

正电子湮没诱发俄歇电子能谱装置的物理设计

与X射线、高能电子或中子激发俄歇电子能谱相比,正电子湮没诱发俄歇电子能谱(PAES)具有极表面选择性、高信噪比、低辐照损伤等特点.本文介绍北京慢正电子强束流的PAEs装置,采用4×10-3 T磁场对正电子和俄歇电子进行输运,强弱磁场梯度对俄歇电子进行平行化,法拉第筒对俄歇电子的能量进行调制,使得整个系统的能量分辨优于2 eV.     

Study of 200 MeV Ag ion induced amorphisation in nickel ferrite thin films

Thin films of nickel ferrite of thickness ∼100 and 150 nm were deposited by pulsed laser deposition. The films were irradiated with a 200 MeV Ag¹⁵⁺ beam of three fluences 1 × 10¹², 2 × 10¹² and 4 × 10¹² ions/cm². X-ray diffraction showed a decrease in the intensity of peaks indicating progressive amorphisation with increased irradiation fluence. Fourier transform infra-red and Raman spectra of pristine and irradiated films were also recorded which showed a degradation of the crystallinity of the samples after irradiation. The damage cross section of the infra-red bands was determined. It was found that the two bands at 557 and 614 cm⁻¹ did not show similar behaviour with fluence.     

Atomic structure and disordering induced by 350 MeV Au ions in MgAl2O4

Microstructure change and atomic disordering in MgO · nAl₂O₃ (n = 1.1) irradiated with 350 MeV Au ions (S_e = 35 keV/nm) were investigated through transmission electron microscopy (TEM) and high angular resolution electron channeling X-ray spectroscopy (HARECXS) techniques. High resolution TEM revealed that each ion track maintains crystalline structure. The core region of ion track is found to reveal a lattice fringe with a half period of spinel matrix, suggesting the phase transformation from spinel to rock-salt structure. HARECXS analysis clearly showed progress of cation disorder at a significantly large region of 10 nm in diameter. These results are compared with the previous results of 200 MeV Xe ion irradiated spinel (S_e = 25 keV/nm). The structure of ion tracks is found to consist of three concentric circle structures: the defective core region (2 nm in diameter), strained region (5 nm) and cation disordered region (10–12 nm).     

A track structure model of optically stimulated luminescence from Al2O3:C irradiated with 10-60 MeV protons

We investigated the optically stimulated luminescence (OSL) signal from Al₂O₃:C irradiated with 10-60 MeV protons to estimate the potential use of this material as a proton dosimeter. After irradiation, OSL decay curves were read out and we used both the initial part and the total area of these curves as response signal. A precondition for optimal proton dosimetry is an LET-independent response and the experimental data showed such an independence at 0.3 Gy for the initial OSL signal.To understand the experimental results, we applied target and track structure theory. Here, the OSL signal is considered to be a result of target activation and the OSL proton signal is calculated from the OSL gamma signal and a radial dose distribution around the proton track. Although several simplifications were made to ease calculations, the classic track structure theory can qualitatively account for all the main features of the experimental data. We estimate a target radius to be between 30 and 150 nm and associate this radius with a charge migration distance in the crystal.The model calculations suggest that the dose and LET-dependency of the OSL signal is a result of an unique mixture of one- and two-hit targets. This implies that the initial OSL signal from Al₂O₃:C in general is not LET-independent at 0.3 Gy or lower doses. However, a mixture of the initial and total OSL signal could provide an LET-independent response in a given LET and dose interval.     

The selection and characterization of the mutants in bioflocculant bacteria C8 induced by 3 MeV helium ion irradiation

A 3 MeV He²⁺ beam was used to irradiate C8 (a flocculant-producing bacteria) with a fluence ranging from 10¹¹ to 10¹³ ions/cm². The effects on the survival ratio, TTC-dehydrogenase activity, flocculating activity and RAPD analysis are reported. The survival ratio curve caused by irradiation is proved to be “saddle-shaped”. Eleven mutants were obtained, all of which had a significant change in dehydrogenase activity and most showed a positive change in flocculating activity. RAPD measurements were used to analyse the DNA of mutants with a flocculating activity over 80%, which indicated that all their DNA had been changed by irradiation.     

Experimental study of the residual activity induced by 950 MeV/u uranium ions in stainless steel and copper

As a preparatory work for constructing the FAIR facility at GSI, samples of stainless steel and copper were irradiated by 950 MeV/u ²³⁸U ions and depth-profiles of residual activity were measured by gamma-ray spectroscopy. The isotopes with dominating contribution to the residual activity were identified and their contributions were quantified. In contrast to the previous study performed at lower energies, the activities could no longer be determined from the full-assembly target measurements. Depth-profiling of residual activity of all identified isotopes had to be completed by measurements of individual target foils. The activity contributions were then obtained by integration of the depth-profiles.     

Selective disorder in the CuO basal planes of YBa2Cu3O7−y by swift heavy ion induced secondary electrons

In situ temperature dependent resistivity, ρ(T) study on c-axis oriented YBa₂Cu₃O_7−y thin films irradiated with 200 MeV Ag ions at 79 K is shown to induce point defects in addition to amorphous ion tracks. Annealing characteristics of these defects indicate that the point defects are basically oxygen disorder selectively created in the CuO basal planes of YBa₂Cu₃O_7−y structure by secondary electrons emanating from the path of 200 MeV Ag ions. These electrons are shown to create defects by inelastic interaction process. Contrary to the general expectation, we show that the superconducting transition temperature, T_c is suppressed at a rate two orders of magnitude faster at extremely low fluences where ion tracks are far apart from each other than at high fluences where tracks tend to overlap. The transition width on the other hand remains unaffected while resistivity shows a large increase at high fluences. At high fluences, a two-step superconducting transition emerged, which indicate the evolution of two types of superconducting regions with distinctly different T_cs.