Program Self-Reference in Constructive Scott Subdomains

Intuitively, a recursion theorem asserts the existence of self-referential programs . Two well-known recursion theorems are Kleene’s Recursion Theorem (krt) and Rogers’ Fixpoint Recursion Theorem (fprt). Does one of these two theorems better capture the notion of program self-reference than the other? In the context of the partial computable functions over the natural numbers (PC\mathcal {PC}), fprt is strictly weaker than krt, in that fprt holds in any effective numbering of PC\mathcal {PC} in which krt holds, but not vice versa. It is shown that, in this context, the existence of self-reproducing programs (a.k.a. quines ) is assured by krt, but not by fprt. Most would surely agree that a self-reproducing program is self-referential. Thus, this result suggests that krt is better than fprt at capturing the notion of program self-reference in PC\mathcal {PC} .     

定向完备偏序集上的模糊Scott拓扑

设L是一个完备剩余格,定义了定向完备偏序集上的Hohle意义下的满层L-拓扑,称之为模糊Scott拓扑;基于满层的L-滤子,建立了相应的Scott收敛理论。证明了一个定向完备偏序集是连续的当且仅当对于每一个满层的L-滤子,其Scott收敛等价于按模糊Scott拓扑收敛。     

Non-nested multi-grid solvers for mixed divergence-free Scott–Vogelius discretizations

We apply the general framework developed by John et al. in Computing 64:307–321, 2000 to analyze the convergence of multi-level methods for mixed finite element discretizations of the generalized Stokes problem using the Scott–Vogelius element. The Scott–Vogelius element seems to be promising since discretely divergence-free functions are divergence-free pointwise. However, to satisfy the Ladyzhenskaya–Babu?ka–Brezzi stability condition, we have to deal in the multi-grid analysis with non-nested families of meshes which are derived from nested macro element triangulations. Additionally, the analysis takes into account an optional symmetric stabilization operator which suppresses spurious oscillations of the velocity provoked by a dominant reaction term. Usually, the generalized Stokes problems appears in semi-implicit splitting schemes for the unsteady Navier–Stokes equations, but the symmetric part of a stabilized discrete Oseen problem can be reguarded as a discrete generalized Stokes problem likewise.     

司各特·菲茨杰拉德《了不起的盖茨比》的解构主义解读

作为"爵士时代"的代言人,菲茨杰拉德的代表作<了不起的盖茨比>被公认为是菲茨杰拉德思想艺术技巧最成熟的作品.借用解构主义策略,通过文本的细致阅读发现菲茨杰拉德有意无意解构了几组二元对立的概念——过去与现在、纯真与堕落、西部与东部,进而发现他在创作"抨击现代腐朽堕落和缅怀过去美好纯真"这一主题所具有的缺陷,最终获得对小说<了不起的盖茨比>新的理解.     

Caratterizzazione dei reticoli continui per la teoria della computazione di Dana Scott

Sommario La struttura dei reticoli continui, che sta alla base della teoria, viene studiata e se ne dà una precisa caratterizzazione in termini di retrazioni di algebre di Boole. Viene inoltre presentato un teorema particolarmente utile per verificare la continnità di reticoli completi contennti in reticoli continui.

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The structure of continuous lattices, on which the theory of computation of Dana Scott is based, is investigated and a precise characterisation in terms of retractions of Boolean algebras is given. In particular, a theorem useful to check the continuity of complete lattices contained in continuous lattices is presented.

     

The Everlasting Charm and Classic of F. Scott Fitzgerald's The Great Gatsby

The Great Gatsby, this novel is a masterpiece in American literature, evokes a haunting mood of a glamorous, wild time that seemingly will never come again. It was classifi ed as a book about the roaring 20 s. The novel is a work of genius, presents a picture of the prohibition era and a masterpiece related with irony and pathos to the legendary of the American Dream, was considered to be Fitzgerald's best novel, and was a great success. Gatsby was the spokesman of his time. And in our hustle and bustle society, nobody can easily succeed; we should boldly go through trials and hardships to train our will so as to get rid of the weakness of our moral characters, especially in this high-developed and full of changeable society.     

Low temperature Si/Si wafer direct bonding using a plasma activated method

Manufacturing and integration of micro-electro-mechanical systems (MEMS) devices and integrated circuits (ICs) by wafer bonding often generate problems caused by thermal properties of materials. This paper presents a low temperature wafer direct bonding process assisted by O₂ plasma. Silicon wafers were treated with wet chemical cleaning and subsequently activated by O₂ plasma in the etch element of a sputtering system. Then, two wafers were brought into contact in the bonder followed by annealing in N₂ atmosphere for several hours. An infrared imaging system was used to detect bonding defects and a razor blade test was carried out to determine surface energy. The bonding yield reaches 90%–95% and the achieved surface energy is 1.76 J/m² when the bonded wafers are annealed at 350 °C in N₂ atmosphere for 2 h. Void formation was systematically observed and elimination methods were proposed. The size and density of voids greatly depend on the annealing temperature. Short O₂ plasma treatment for 60 s can alleviate void formation and enhance surface energy. A pulling test reveals that the bonding strength is more than 11.0 MPa. This low temperature wafer direct bonding process provides an efficient and reliable method for 3D integration, system on chip, and MEMS packaging.     

硅应变计的氮化硅钝化新技术

介绍一种硅应变计,通过使用同种材料、采用两种不同的工艺技术对比试验,测试结果表明,氮化硅钝化技术制造的产品性能优于常规半导体技术制作的同类产品。     

Comparison of a‐Si and Poly‐Si for AMOLED displays

Abstract— The characteristics of OLED backplanes including the intrinsic properties of a‐Si TFTs and LTPS TFTs will be reviewed. While LTPS TFTs reveal satisfactory stability in AMOLED‐display applications, a‐Si AMOLEDs show better uniformity and are capable of driving OLEDs. However, the stability of a‐Si TFTs under long‐term operation is still unacceptable and remains to be the key issue constraining the commercialization of a‐Si TFT AMOLEDs.     

硅微型机械振动陀螺的制备

详细介绍了双框架结构的硅微型机械振动陀螺的工作原理及工艺，设计并试制出了挠性轴厚度为０．８μｍ的三种不同尺寸的双框架结构的硅微型机械振动陀螺的样品，其机械结构的主要尺寸误差可控制在１０％以内。     

Si nanowire FET and its modeling

Because of its ability to effectively suppress off-leakage current with its gate-around conffguration, the Si nanowire FET is considered to be the ultimate structure for ultra-small CMOS devices to the extent that the devices would be approaching their downsized limits. Recently, several experimental studies of Si nanowire FETs with on-currents much larger than those of planar MOSFETs have been published. Consequently, Si nanowire FETs are now gaining significant attention as the most promising candidate fo...     

硅各向异性腐蚀技术研究

针对两种补偿结构探讨了硅的凸角腐蚀补偿原理,设计了补偿版图,并在KOH腐蚀液中进行实验验证,获得了好的直角凸面补偿效果。     

Semi-polar GaN LEDs on Si substrate

Growth of semi-polar (1-101)GaN has been attempted on a patterned (001) silicon substrate adopting selective area MOVPE. The growth was initiated on (111) facets of the Si,which had been prepared by anisotropy etching in a KOH solution. A uniform semi-polar layer was achieved by coalescence of stripes. Since the growth was performed on facets,the surface was atomically flat in AFM surface analyses. By using a high temperature grown AlN nucleation layer,we achieved low threading dislocation density at the to...     

硅微型振动陀螺的设计

从理论和材料力学两方面对硅微机械振动陀螺进行研究，提出了一种简化的结构模型，并介绍了这种陀螺的设计方法。