On the ratio of independent complex Gaussian random variables

In this paper, we derive a closed form equation for the joint probability distribution \({{f_{{R}_{z}}},{\varTheta _{z}}}({r_{z}},{\theta _{z}})\) of the amplitude \({R_{z}}\) and phase \({\varTheta _{z}}\) of the ratio \({Z=\frac{X}{Y}}\) of two independent non-zero mean Complex Gaussian random variables \(X\sim CN(\nu _{x} \mathrm {e}^{j\phi _{x}},{\sigma ^{2}_{x}})\) and \(Y\sim CN(\nu _{y} \mathrm {e}^{j\phi _{y}},{\sigma ^{2}_{y}})\). The derived joint probability distribution only contains a confluent hypergeometric function of the first kind \({_1F_{1}}\) without infinite summations resulting in computational efficiency. We further derive the probability distribution for the ratio of two non-zero mean independent real Rician random variables containing an infinite summation generated by the estimation of the Cauchy product of equivalent series of two modified Bessel functions.     

Ultra-Fast Current Mode Sense Amplifier for Small $$I_{\mathrm{CELL}}$$ SRAM in FinFET with Improved Offset Tolerance

In this paper, a novel, high-performance and robust sense amplifier (SA) design is presented for small \(I_\mathrm{CELLl}\) SRAM, using fin-shaped field effect transistors (FinFET) in 22-nm technology. The technique offers data-line-isolated current sensing approach. Compared with the conventional CSA (CCSA) and hybrid SA (HSA), the proposed current feed-SA (CF-SA) demonstrates 2.15\(\times \) and 3.02\(\times \) higher differential current, respectively, for \({V}_{\mathrm{DD}}\) of 0.6 V. Our results indicate that even at the worst corner, CF-SA can provide 2.23\(\times \) and 1.7\(\times \) higher data-line differential voltage compared with CCSA and HSA, respectively. Further, 66.89 and 31.47 % reductions in the cell access time are achieved compared to the CCSA and HSA, respectively, under similar \(I_\mathrm{CELLl}\) and bit-line and data-line capacitance. Statistical simulations have proved that the CF-SA provides high read yield with 32.39 and 22.24 % less \(\upsigma _{\mathrm{Delay}}\). It also offers a much better read effectiveness and robustness against the data-line capacitance as well as \({V}_{\mathrm{DD}}\) variation. Furthermore, the CF-SA is able to tolerate a large offset of the input devices, up to 80 mV at \({V}_{\mathrm{DD}}=0.6\hbox {V}\).     

Design of all-optical JK,SR and T flip-flops using micro-ring resonator-based optical switch

In the present communication, all-optical clocked J–K flip-flop is proposed and described using silicon waveguide-based optical micro-ring resonator (OMRR). We have used two optical pump signals representing the two operands (J and K) of the logical operation to modulate the OMRRs under low pump power condition. A theoretical model of the proposed J–K flip-flop and hence S–R and T flip-flop are developed using micro-ring resonator through pump–probe configuration. Numerical simulation results for clocked flip-flop circuits verifying the proposed method are given in this paper. We identified a combination of feasible OMRR radius and detuning through numerical simulation which allows analyzing the system performance of the scheme such as maximum amplitude difference between marks \((\hbox {AD}_{1,\mathrm{{max}}})\), between spaces \((\hbox {AD}_{0,\mathrm{{max}}})\) and between marks and spaces \((\hbox {AD}_{1/0,\mathrm{{max}}})\), which confirm the feasibility of the flip-flop design. A maximum buildup factor of 19.57 is achieved at an optimized coupling coefficient of 0.22.     

Full characterization of gain and noise boundaries for NF<Subscript>min</Subscript> or unity SWR<Subscript>out</Subscript> operation

For a receiver sub-block , Low Noise Amplifier is the first stage after the receiving antenna and as a key device, its amplification and noise figure (NF) affects the whole performance of the receiving part. In this paper we present a full graphical visualization in terms of gain, standing wave ratio (SWR) and noise for a GaAs HJ-FET transistor in two operating cases; (1) NF_min, (2) Unity \(\hbox {SWR}_{\mathrm{out}}\). The set of curves and contours presented will provide the designer with enough visual information about the transistor operating boundaries and will also visually assist on choosing the appropriate matching points for a wideband operation according to the desired (transducer gain \(\hbox {G}_{\mathrm{T}},\hbox {SWR}\)) for case (1) and (\(\hbox {G}_{\mathrm{T}},\hbox {SWR}_{\mathrm{in}},\hbox {NF}\)) for case (2). Numerical examples are given for each operating case and verified via a microwave circuit design software package to demonstrate the adequacy of the proposed graphical techniques . The results from simulations compare favourably with the visually estimated values.     

Ab␣Initio Study of Aluminium Impurity and Interstitial-Substitutional Complexes in Ge Using a Hybrid Functional (HSE)

The results of an ab?initio modelling of aluminium substitutional impurity (\({\hbox {Al}}_{\rm Ge}\)), aluminium interstitial in Ge [\({\hbox {I}}_{\rm Al}\) for the tetrahedral (T) and hexagonal (H) configurations] and aluminium interstitial-substitutional pairs in Ge (\({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\)) are presented. For all calculations, the hybrid functional of Heyd, Scuseria, and Ernzerhof in the framework of density functional theory was used. Defects formation energies, charge state transition levels and minimum energy configurations of the \({\hbox {Al}}_{\rm Ge}\), \({\hbox {I}}_{\rm Al}\) and \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) were obtained for ?2, ?1, 0, \(+\)1 and \(+\)2 charge states. The calculated formation energy shows that for the neutral charge state, the \({\hbox {I}}_{\rm Al}\) is energetically more favourable in the T than the H configuration. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) forms with formation energies of ?2.37 eV and ?2.32 eV, when the interstitial atom is at the T and H sites, respectively. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) is energetically more favourable when the interstitial atom is at the T site with a binding energy of 0.8 eV. The \({\hbox {I}}_{\rm Al}\) in the T configuration, induced a deep donor (\(+\)2/\(+1\)) level at \(E_{\mathrm {V}}+0.23\) eV and the \({\hbox {Al}}_{\rm Ge}\) induced a single acceptor level (0/?1) at \(E_{\mathrm {V}}+0.14\) eV in the band gap of Ge. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) induced double-donor levels are at \(E_{\rm V}+0.06\) and \(E_{\rm V}+0.12\) eV, when the interstitial atom is at the T and H sites, respectively. The \({\hbox {I}}_{\rm Al}\) and \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) exhibit properties of charge state-controlled metastability.     

A 0.36 μW/channel recorder for external ambulatory ECG recorders

There is an increasing demand for long-term ECG monitoring applications which are very low power, small size and capable of wireless data transmission. This paper presents an analog front-end and also modulator for long-term ECG recording purpose. The fully integrated system features three independent channels and a modulator. The analog front-end includes a voltage-to-time conversion and a tunable modulator to achieve a very low power consumption for wireless transmission of the data without analog to digital converter. The proposed system is designed and simulated in a \(0.18\,\upmu \hbox {m}\) CMOS technology and occupies only \(0.245\,\mathrm{mm}^{2}\). It can record ECG signal with 9.2-bit resolution while consuming only \(0.36\,\upmu {\mathrm{W}}\) per channel from a 0.9 V supply. Also, it can transmit data consuming just \(0.72\,{\upmu }\mathrm{W}\) per channel from a 0.9 V supply. The input referred noise of the readout channel is \(2.01\,\upmu {\mathrm{V}}_{{{\rm rms}}}\).     

New Efficient Algorithms for Multiplication Over Fields of Characteristic Three

In this paper, we first present an enhancement of the well-known Karatsuba 2-way and 3-way algorithms for characteristic three fields, denoted by \(\mathbb {F}_{3^{n}}\) where n≥1. We then derive a 3-way polynomial multiplication algorithm with five 1/3 sized multiplications that use interpolation in \(\mathbb {F}_{9}\). Following the computation of the arithmetic and delay complexity of the proposed algorithm, we provide the results of our hardware implementation of polynomial multiplications over \(\mathbb {F}_{3}\) and \(\mathbb {F}_{9}\). The final proposal is a new 3-way polynomial multiplication algorithm over \(\mathbb {F}_{3}\) that uses three polynomial multiplications of 1/3 of the original size over \(\mathbb {F}_{3}\) and one polynomial multiplication of 1/3 of the original size over \(\mathbb {F}_{9}\). We show that this algorithm represents about 15% reduction of the complexity over previous algorithms for the polynomial multiplications whose sizes are of practical interest.     

Application of photonic crystal ring resonator nonlinear response for full-optical tunable add–drop filtering

In this paper, we investigate the application of Kerr-like nonlinear photonic crystal (PhC) ring resonator (PCRR) for realizing a tunable full-optical add–drop filter. We used silicon (Si) nano-crystal as the nonlinear material in pillar-based square lattice of a 2DPhC. The nonlinear section of PCRR is studied under three different scenarios: (1) first only the inner rods of PCRR are made of nonlinear materials, (2) only outer rods of PCRR have nonlinear response, and (3) both of inner and outer rods are made of nonlinear material. The simulation results indicate that optical power required to switch the state of PCRR from turn-on to turn-off, for the nonlinearity applied to inner PCRR, is at least \(2000\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) and, for the nonlinearity applied to outer PCRR, is at least \(3000\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) which corresponds to refractive index change of \(\Delta n_\mathrm{NL }= 0.085\) and \(\Delta n_\mathrm{NL }= 0.15\), respectively. For nonlinear tuning of add–drop filter, the minimum power required to 1 nm redshift the center operating wavelength \((\lambda _{0} = 1550\, \hbox {nm})\) for the inner PCRR scenario is \(125\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) (refractive index change of \(\Delta n_\mathrm{NL}= 0.005)\). Maximum allowed refractive index change for inner and outer scenarios before switch goes to saturation is \(\Delta n_\mathrm{NL }= 0.04\) (maximum tune-ability 8 nm) and \(\Delta n_\mathrm{NL }= 0.012\) (maximum tune-ability of 24 nm), respectively. Performance of add–drop filter is replicated by means of finite-difference time-domain method, and simulations displayed an ultra-compact size device with ultra-fast tune-ability speed.     

An Accurate Performance Analysis for Regenerative Multi-hop Relaying in Wireless Networks Over Composite Multipath/Shadowed Fading

This paper presents and evaluates the performance of wireless networks that utilize the decode-and-forward relay. This multi-hop relaying scheme communicates over Extended Generalized-\({\mathcal {K}}\) (\(\hbox {EG}{\mathcal {K}}\)) composite fading channels to create performance evaluation. To this effect, new exact and easy to compute formulas for several performance metrics are derived. More specifically, new and exact-form mathematical formulas are derived for the cumulative distribution function, the generalized moments of the overall end-to-end signal-to-noise ratio, the outage probability (\({\hbox {P}}_{\text{out}}\)), the ergodic capacity (\({\mathcal {C}}_{\text{Ergodic}}\)), the moment generating function, and the average error probability (\({\hbox {Pr(e)}}\)) for different modulation schemes. Moreover, we carried out a series of computer simulation experiments in order to testify the accuracy of the derived framework. Finally, we discussed the impact of different parameters including fading/shadowing parameters, transmitted power and the number of hops on the derived expressions.     

High-Accuracy Time-Mode Duty-Cycle-Modulation-Based Temperature Sensor for Energy-Efficient System Applications

This paper presents a new time-mode duty-cycle-modulation-based high-accuracy temperature sensor. Different from the well-known \({\varSigma }{\varDelta }\) ADC-based readout structure, this temperature sensor utilizes a temperature-dependent oscillator to convert the temperature information into temperature-related time-mode parameter values. The useful output information of the oscillator is the duty cycle, not the absolute frequency. In this way, this time-mode duty-cycle-modulation-based temperature sensor has superior performance over the conventional inverter-chain-based time domain types. With a linear formula, the duty-cycle output streams can be converted into temperature values. The design is verified in 65nm standard digital CMOS process. The verification results show that the worst temperature inaccuracy is kept within 1\(\,^{\circ }\mathrm{C}\) with a one-point calibration from \(-\)55 to 125 \(^{\circ }\mathrm{C}\). At room temperature, the average current consumption is only 0.8 \(\upmu \)A (1.1\(\,\upmu \)A in one phase and 0.5 \(\upmu \)A in the other) with 1.2 V supply voltage, and the total energy consumption for a complete measurement is only 0.384 \({\hbox {nJ}}\).     

High-Frequency and ETP-Efficient Range-Matching Scheme

A dynamic–static mixed range-matching scheme is proposed, which significantly increases system clock frequency and reduces \(\hbox {Energy-T}_{\mathrm {clock}}\)-Product (ETP). Furthermore, the range-matching cell adopted in the current scheme presents higher-speed performance although it uses two transistors less than the previous one. Using 1.2V SMIC 130 nm process, the proposed 16-bit range-matching word (RMW) can work in the minimal clock cycle of 0.753 ns. In case of 50 % duty cycle ratio and the minimal clock cycle, the ETP of proposed RMW is 5.947 fJ \(\cdot \) ns/bit/search.     

Design and analysis of a feedback time difference amplifier with linear and programmable gain

This paper proposes a feedback time difference amplifier (FTDA) that achieves linear, controllable gain and changeable input range for different time difference gains. The proposed FTDA consists of two identical feedback output generators. The feedback output generator achieves a linear input–output transfer characteristic by employing two p-type keepers for time gain feedback control. Its validity was demonstrated using \({0.13}\, {\upmu \hbox {m}}\) SiGe BiCMOS process. The power consumption is \(91.54 \,{\upmu \hbox {W}}\) for the highest gain with input signals at \({2}\,\hbox {MHz}\). The gain can be controlled from 25.06 to \(734.9\,{\hbox {s/s}}\) within \(40 \,\hbox {ps}\) input time interval.     

Electrical Transport Mechanisms and Photoconduction in Undoped Crystalline Flash-Evaporated Lead Iodide Thin Films

The flash-evaporation technique was utilized to fabricate undoped 1.35-μm and 1.2-μm thick lead iodide films at substrate temperatures \( T_{\rm{s}} = 150 \)°C and 200°C, respectively. The films were deposited onto a coplanar comb-like copper (Cu-) electrode pattern, previously coated on glass substrates to form lateral metal–semiconductor–metal (MSM-) structures. The as-measured constant-temperature direct-current (dc)-voltage (\( I\left( {V;T} \right) - V \)) curves of the obtained lateral coplanar Cu-PbI₂-Cu samples (film plus electrode) displayed remarkable ohmic behavior at all temperatures (\( T = 18 - 90\,^\circ {\hbox{C}} \)). Their dc electrical resistance \( R_{\rm{dc}} (T \)) revealed a single thermally-activated conduction mechanism over the temperature range with activation energy \( E_{\rm{act}} \approx 0.90 - 0.98 \,{\hbox{eV}} \), slightly less than half of room-temperature bandgap energy \( E_{\rm{g}} \) (\( \approx \,2.3\, {\hbox{eV}} \)) of undoped 2H-polytype PbI₂ single crystals. The undoped flash-evaporated \( {\hbox{PbI}}_{\rm{x}} \) thin films were homogeneous and almost stoichiometric (\( x \approx 1.87 \)), in contrast to findings on lead iodide films prepared by other methods, and were highly crystalline hexagonal 2H-polytypic structure with c-axis perpendicular to the surface of substrates maintained at \( T_{\rm{s}} { \gtrsim }150^\circ {\hbox{C}} \). Photoconductivity measurements made on these lateral Cu-PbI₂-Cu-structures under on–off visible-light illumination reveal a feeble photoresponse for long wavelengths (\( \lambda > 570\,{\hbox{nm}} \)), but a strong response to blue light of photon energy \( E_{\rm{ph}} \) \( \approx \,2.73 \, {\hbox{eV}} \) (\( > E_{\rm{g}} \)), due to photogenerated electron–hole (e–h) pairs via direct band-to-band electronic transitions. The constant-temperature/dc voltage current–time \( I\left( {T,V} \right) - t \) curves of the studied lateral PbI₂ MSM-structures at low ambient temperatures (\( T < 50^\circ {\hbox{C}} \)), after cutting off the blue-light illumination, exhibit two trapping mechanisms with different relaxation times. These strongly depend on \( V \) and \( T \), with thermally generated charge carriers in the PbI₂ mask photogenerated (e–h) pairs at higher temperatures.     

A novel optimized neutrosophic <Emphasis Type="Italic">k</Emphasis>-means using genetic algorithm for skin lesion detection in dermoscopy images

This paper implemented a new skin lesion detection method based on the genetic algorithm (GA) for optimizing the neutrosophic set (NS) operation to reduce the indeterminacy on the dermoscopy images. Then, k-means clustering is applied to segment the skin lesion regions. Therefore, the proposed method is called optimized neutrosophic k-means (ONKM). On the training images set, an initial value of \(\alpha \) in the \(\alpha \)-mean operation of the NS is used with the GA to determine the optimized \(\alpha \) value. The Jaccard index is used as the fitness function during the optimization process. The GA found the optimal \(\alpha \) in the \(\alpha \)-mean operation as \(\alpha _{\mathrm{optimal}} =0.0014\) in the NS, which achieved the best performance using five fold cross-validation. Afterward, the dermoscopy images are transformed into the neutrosophic domain via three memberships, namely true, indeterminate, and false, using \(\alpha _{\mathrm{optimal}}\). The proposed ONKM method is carried out to segment the dermoscopy images. Different random subsets of 50 images from the ISIC 2016 challenge dataset are used from the training dataset during the fivefold cross-validation to train the proposed system and determine \(\alpha _{\mathrm{optimal}}\). Several evaluation metrics, namely the Dice coefficient, specificity, sensitivity, and accuracy, are measured for performance evaluation of the test images using the proposed ONKM method with \(\alpha _{\mathrm{optimal}} =0.0014\) compared to the k-means, and the \(\gamma \)–k-means methods. The results depicted the dominance of the ONKM method with \(99.29\pm 1.61\%\) average accuracy compared with k-means and \(\gamma \)–k-means methods.     

A 3.1–10.6 GHz UWB LNA Based on Self Cascode Technique for Improved Bandwidth and High Gain

In this work, we present a self cascode based ultra-wide band (UWB) low noise amplifier (LNA) with improved bandwidth and gain for 3.1–10.6 GHz wireless applications. The self cascode (SC) or split-length compensation technique is employed to improve the bandwidth and gain of the proposed LNA. The improvement in the bandwidth of SC based structure is around 1.22 GHz as compared to simple one. The significant enhancement in the characteristics of the introduced circuit is found without extra passive components. The SC based CS–CG structure in the proposed LNA uses the same DC current for operating first stage transistors. In the designed UWB LNA, a common source (CS) stage is used in the second stage to enhance the overall gain in the high frequency regime. With a standard 90 nm CMOS technology, the presented UWB LNA results in a gain \(\hbox {S}_{21}\) of \(20.10 \pm 1.65\,\hbox {dB}\) across the 3.1–10.6 GHz frequency range, and dissipating 11.52 mW power from a 1 V supply voltage. However, input reflection, \(\hbox {S}_{11}\), lies below \(-\,10\) dB from 4.9–9.1 GHz frequency. Moreover, the output reflection (\(\hbox {S}_{22}\)) and reverse isolation (\(\hbox {S}_{12}\)), is below \(-\,10\) and \(-\,48\) dB, respectively for the ultra-wide band region. Apart from this, the minimum noise figure (\(\hbox {NF}_{min}\)) value of the proposed UWB LNA exists in the range of 2.1–3 dB for 3.1–10.6 GHz frequency range with a a small variation of \(\pm \,0.45\,\hbox {dB}\) in its \(\hbox {NF}_{min}\) characteristics. Linearity of the designed LNA is analysed in terms of third order input intercept point (IIP3) whose value is \(-\,4.22\) dBm, when a two tone signal is applied at 6 GHz with a spacing of 10 MHz. The other important benefits of the proposed circuit are its group-delay variation and gain variation of \(\pm \,115\,\hbox {ps}\) and \(\pm \,1.65\,\hbox {dB}\), respectively.     

Modeling and analysis of red emission in $$\hbox {Pr}^{3+}$$-doped fiber lasers

In order to improve the performance of the \(\hbox {Pr}^{3+}\)-doped fiber laser, the optimum fiber length and reflectivity of mirrors, the maximum output power, the lasing threshold, and the slope efficiency are needed to be estimated. In this work, a \(\hbox {Pr}^{3+}\)-doped fiber laser is considered with fiber Bragg gratings (FBG) as reflectors and an injected pump power in one side. To do so, the rate and power propagation equations of the \(\hbox {Pr}^{3+}\)-doped fiber laser are solved numerically by finite difference method and the boundary conditions are obtained by shooting method in an iterative process. The effect of some structural parameters such as the laser background loss, the pump power, the \(\hbox {Pr}^{3+}\) dopant concentration, and the reflectivity coefficient of FBG2 on the performance of laser is studied, and the optimum values for fiber length and reflectivity of FBG2 are obtained.     

An efficient resource management scheme in light-trail networks

Light-trail, a framework proposed in the past few years, is generalized from the concept of lightpath, and its distinguishing features include bandwidth sharing and efficient bandwidth utilization. Performance of light-trail networks depends on the routing algorithm and the dynamic bandwidth allocation (DBA) scheme, and the former issue has been discussed extensively. In this work, we aim at the design of an efficient DBA scheme, named Demand and Delay-latency Aware with Two-round Deliberation \((\hbox {D}^{2}\hbox {ATD})\), to allocate bandwidth more accurately and efficiently in light-trail networks. In addition to DBA issue, \(\hbox {D}^{2}\hbox {ATD}\) includes a light-trail setup/release mechanism as well. As expected, the simulation results reveal superiority of \(\hbox {D}^{2}\hbox {ATD}\) in both blocking performance and delay performance. Although \(\hbox {D}^{2}\hbox {ATD}\) pays a price of control overhead for performance gain, it is still reasonable since the amount of control messages does not exceed the capacity of the control channel. It verifies that \(\hbox {D}^{2}\hbox {ATD}\) can properly employ the control channel to achieve excellent performance.     

A novel proposal for all-optical decoder based on photonic crystals

In this paper, a new structure for all-optical 2-to-4 decoder is proposed which consists of six nonlinear photonic crystal ring resonators. The lattice constant of the main structure is a = 600 nm, and the refractive index and radii of rods are 3.1 and 0.2a, respectively. Simulation results have proved correct operation states of the decoder and numerical analysis is done in order to additional evaluation. The maximum and minimum power levels for logic 0 and 1 are \(0.1P_{\mathrm{in}}\) and \(0.37P_{\mathrm{in}}\) where \(P_{\mathrm{in}}\) is input power. The maximum cross talk and insertion loss are calculated about ?38 and ?20 dB, respectively. Since the operation speed of the decoder is more than 160 GHz, it will be appropriate candidate for being employed in ultrahigh-speed optical communication systems.     

Study on the Effect of Mn,Zn, and Sb on Undercooling Behavior of Sn-Ag-Cu Alloys Using Differential Thermal Analysis

Differential thermal analysis (DTA) has been conducted on directionally solidified near-eutectic Sn-3.0 wt.%Ag-0.5 wt.%Cu (SAC), SAC \(+\) 0.2 wt.%Sb, SAC \(+\) 0.2 wt.%Mn, and SAC \(+\) 0.2 wt.%Zn. Laser ablation inductively coupled plasma mass spectroscopy was used to study element partitioning behavior and estimate DTA sample compositions. Mn and Zn additives reduced the undercooling of SAC from 20.4\(^\circ \hbox {C}\) to \(4.9^\circ \hbox {C}\) and \(2^\circ \hbox {C}\), respectively. Measurements were performed at cooling rate of \(10^\circ \hbox {C}\) per minute. After introducing 200 ppm \(\hbox {O}_2\) into the DTA, this undercooling reduction ceased for SAC \(+\) Mn but persisted for SAC \(+\) Zn.