High-Accuracy Time-Mode Duty-Cycle-Modulation-Based Temperature Sensor for Energy-Efficient System Applications

This paper presents a new time-mode duty-cycle-modulation-based high-accuracy temperature sensor. Different from the well-known \({\varSigma }{\varDelta }\) ADC-based readout structure, this temperature sensor utilizes a temperature-dependent oscillator to convert the temperature information into temperature-related time-mode parameter values. The useful output information of the oscillator is the duty cycle, not the absolute frequency. In this way, this time-mode duty-cycle-modulation-based temperature sensor has superior performance over the conventional inverter-chain-based time domain types. With a linear formula, the duty-cycle output streams can be converted into temperature values. The design is verified in 65nm standard digital CMOS process. The verification results show that the worst temperature inaccuracy is kept within 1\(\,^{\circ }\mathrm{C}\) with a one-point calibration from \(-\)55 to 125 \(^{\circ }\mathrm{C}\). At room temperature, the average current consumption is only 0.8 \(\upmu \)A (1.1\(\,\upmu \)A in one phase and 0.5 \(\upmu \)A in the other) with 1.2 V supply voltage, and the total energy consumption for a complete measurement is only 0.384 \({\hbox {nJ}}\).     

Study on the Effect of Mn,Zn, and Sb on Undercooling Behavior of Sn-Ag-Cu Alloys Using Differential Thermal Analysis

Differential thermal analysis (DTA) has been conducted on directionally solidified near-eutectic Sn-3.0 wt.%Ag-0.5 wt.%Cu (SAC), SAC \(+\) 0.2 wt.%Sb, SAC \(+\) 0.2 wt.%Mn, and SAC \(+\) 0.2 wt.%Zn. Laser ablation inductively coupled plasma mass spectroscopy was used to study element partitioning behavior and estimate DTA sample compositions. Mn and Zn additives reduced the undercooling of SAC from 20.4\(^\circ \hbox {C}\) to \(4.9^\circ \hbox {C}\) and \(2^\circ \hbox {C}\), respectively. Measurements were performed at cooling rate of \(10^\circ \hbox {C}\) per minute. After introducing 200 ppm \(\hbox {O}_2\) into the DTA, this undercooling reduction ceased for SAC \(+\) Mn but persisted for SAC \(+\) Zn.     

Error performance of optically preamplified hybrid BPSK-PPM systems with transmitter and receiver imperfections

In this paper, we investigate the impact of the transmitter finite extinction ratio and the receiver carrier recovery phase offset on the error performance of two optically preamplified hybrid M-ary pulse position modulation (PPM) systems with coherent detection. The first system, referred to as PB-mPPM, combines polarization division multiplexing (PDM) with binary phase-shift keying and M-ary PPM, and the other system, referred to as PQ-mPPM, combines PDM with quadrature phase-shift keying and M-ary PPM. We provide new expressions for the probability of bit error for PB-mPPM and PQ-mPPM under finite extinction ratios and phase offset. The extinction ratio study indicates that the coherent systems PB-mPPM and PQ-mPPM outperform the direct-detection ones. It also shows that at \(P_b=10^{-9}\) PB-mPPM has a slight advantage over PQ-mPPM. For example, for a symbol size \(M=16\) and extinction ratio \(r=30\) dB, PB-mPPM requires 0.6 dB less SNR per bit than PQ-mPPM to achieve \(P_b=10^{-9}\). This investigation demonstrates that PB-mPPM is less complex and less sensitive to the variations of the offset angle \(\theta \) than PQ-mPPM. For instance, for \(M=16\), \(r=30\) dB, and \(\theta =10^{\circ }\) PB-mPPM requires 1.6 dB less than PQ-mPPM to achieve \(P_b=10^{-9}\). However, PB-mPPM enhanced robustness to phase offset comes at the expense of a reduced bandwidth efficiency when compared to PQ-mPPM. For example, for \(M=2\) its bandwidth efficiency is 60 % that of PQ-mPPM and \(\approx 86\,\%\) for \(M=1024\). For these reasons, PB-mPPM can be considered a reasonable design trade-off for M-ary PPM systems.     

A Low-Voltage Fully Differential Pure Current Mode Current Operational Amplifier

In this paper a novel high-frequency fully differential pure current mode current operational amplifier (COA) is proposed that is, to the authors’ knowledge, the first pure MOSFET Current Mode Logic (MCML) COA in the world, so far. Doing fully current mode signal processing and avoiding high impedance nodes in the signal path grant the proposed COA such outstanding properties as high current gain, broad bandwidth, and low voltage and low-power consumption. The principle operation of the block is discussed and its outstanding properties are verified by HSPICE simulations using TSMC \(0.18\,\upmu \hbox {m}\) CMOS technology parameters. Pre-layout and Post-layout both plus Monte Carlo simulations are performed under supply voltages of \(\pm 0.75\,\hbox {V}\) to investigate its robust performance at the presence of fabrication non-idealities. The pre-layout plus Monte Carlo results are as; 93 dB current gain, \(8.2\,\hbox {MHz}\,\, f_{-3\,\text {dB}}, 89^{\circ }\) phase margin, 137 dB CMRR, 13 \(\Omega \) input impedance, \(89\,\hbox {M}\Omega \) output impedance and 1.37 mW consumed power. Also post-layout plus Monte Carlo simulation results (that are generally believed to be as reliable and practical as are measuring ones) are extracted that favorably show(in abovementioned order of pre-layout) 88 dB current gain, \(6.9\,\hbox {MHz} f_{-3\text {db}} , 131^{\circ }\) phase margin and 96 dB CMRR, \(22\,\Omega \) input impedance, \(33\,\hbox {M}\Omega \) output impedance and only 1.43 mW consumed power. These results altogether prove both excellent quality and well resistance of the proposed COA against technology and fabrication non-idealities.     

Two-channel perfect reconstruction (PR) quadrature mirror filter (QMF) bank design using logarithmic window function and spline function

In this work, two-channel perfect reconstruction quadrature mirror filter (QMF) bank has been proposed based on the prototype filter using windowing method. A novel window function based on logarithmic function along with the spline function is utilized for the design of prototype filter. The proposed window has a variable parameter ‘\(\alpha \)’, which varies the peak side lobe level and rate of fall-off side lobe level which in turn affects the peak reconstruction error (PRE) and amplitude distortion (\(e_{am}\)) of the QMF bank . The transition width of the prototype is controlled by the spline function using the parameter ‘\(\mu \)’. The perfect reconstruction condition is satisfied by setting the cutoff frequency (\(\omega _{c}\)) of the prototype low-pass filter at ‘\(\pi /2\)’. The performance of the proposed design method has been evaluated in terms of mean square error in the pass band, mean square error in the stop band, first side lobe attenuation (\(A_{1}\)), peak reconstruction error (PRE) and amplitude error (\(e_{am}\)) for different values of ‘\(\alpha \)’ and ‘\(\mu \)’. The results are provided and compared with the existing methods.     

Electrical Transport Mechanisms and Photoconduction in Undoped Crystalline Flash-Evaporated Lead Iodide Thin Films

The flash-evaporation technique was utilized to fabricate undoped 1.35-μm and 1.2-μm thick lead iodide films at substrate temperatures \( T_{\rm{s}} = 150 \)°C and 200°C, respectively. The films were deposited onto a coplanar comb-like copper (Cu-) electrode pattern, previously coated on glass substrates to form lateral metal–semiconductor–metal (MSM-) structures. The as-measured constant-temperature direct-current (dc)-voltage (\( I\left( {V;T} \right) - V \)) curves of the obtained lateral coplanar Cu-PbI₂-Cu samples (film plus electrode) displayed remarkable ohmic behavior at all temperatures (\( T = 18 - 90\,^\circ {\hbox{C}} \)). Their dc electrical resistance \( R_{\rm{dc}} (T \)) revealed a single thermally-activated conduction mechanism over the temperature range with activation energy \( E_{\rm{act}} \approx 0.90 - 0.98 \,{\hbox{eV}} \), slightly less than half of room-temperature bandgap energy \( E_{\rm{g}} \) (\( \approx \,2.3\, {\hbox{eV}} \)) of undoped 2H-polytype PbI₂ single crystals. The undoped flash-evaporated \( {\hbox{PbI}}_{\rm{x}} \) thin films were homogeneous and almost stoichiometric (\( x \approx 1.87 \)), in contrast to findings on lead iodide films prepared by other methods, and were highly crystalline hexagonal 2H-polytypic structure with c-axis perpendicular to the surface of substrates maintained at \( T_{\rm{s}} { \gtrsim }150^\circ {\hbox{C}} \). Photoconductivity measurements made on these lateral Cu-PbI₂-Cu-structures under on–off visible-light illumination reveal a feeble photoresponse for long wavelengths (\( \lambda > 570\,{\hbox{nm}} \)), but a strong response to blue light of photon energy \( E_{\rm{ph}} \) \( \approx \,2.73 \, {\hbox{eV}} \) (\( > E_{\rm{g}} \)), due to photogenerated electron–hole (e–h) pairs via direct band-to-band electronic transitions. The constant-temperature/dc voltage current–time \( I\left( {T,V} \right) - t \) curves of the studied lateral PbI₂ MSM-structures at low ambient temperatures (\( T < 50^\circ {\hbox{C}} \)), after cutting off the blue-light illumination, exhibit two trapping mechanisms with different relaxation times. These strongly depend on \( V \) and \( T \), with thermally generated charge carriers in the PbI₂ mask photogenerated (e–h) pairs at higher temperatures.     

5.18–7.42 GHz LC-VCO in subthreshold regime with low power low phase noise and immunity to PVT variations in 130 nm CMOS technology

In this paper, we propose an LC-VCO using automatic amplitude control and filtering technique to eliminate frequency noise around 2\(\omega _0\). The LC-VCO is designed with TSMC 130 nm CMOS RF technology, and biased in subthreshold regime in order to get more negative transconductance to overcome the losses in the LC-Tank and achieve less power consumption. The designed VCO operates at 5.17 GHz and can be tuned from 5.17 to 7.398 GHz, which is corresponding to 35.5% tuning range. The VCO consumes through it 495–440.5 \(\upmu\)W from 400 mV dc supply. This VCO achieves a phase noise of \(-\,122.3\) and \(-\,111.7\) dBc/Hz at 1 MHz offset from 5.17 and 7.39 GHz carrier, respectively. The calculated Figure-of-merits (FoM) at 1 MHz offset from 5.17 and 7.39 GHz is \(-\,199.7\) and \(-\,192.4\) dBc/Hz, respectively. And it is under \(-\,190.5\) dBc/Hz through all the tuning range. The FoM\(_T\) at 1 MHz offset from 5.17 GHz carrier is \(-\,210.6\) dBc/Hz. The proposed design was simulated for three different temperatures (\(-\,55\), 27, \(125\,^{\circ }\hbox {C}\)), and three supply voltages (0.45, 0.4, 0.35 V), it was concluded that the designed LC-VCO presents high immunity to PVT variations, and can be used for multi-standard wireless LAN communication protocols 802.11a/b/g.     

The $$\mathbb {}$$-curve Construction for Endomorphism-Accelerated Elliptic Curves

We give a detailed account of the use of \(\mathbb {Q}\)-curve reductions to construct elliptic curves over \(\mathbb {F}_{p^2}\) with efficiently computable endomorphisms, which can be used to accelerate elliptic curve-based cryptosystems in the same way as Gallant–Lambert–Vanstone (GLV) and Galbraith–Lin–Scott (GLS) endomorphisms. Like GLS (which is a degenerate case of our construction), we offer the advantage over GLV of selecting from a much wider range of curves and thus finding secure group orders when \(p\) is fixed for efficient implementation. Unlike GLS, we also offer the possibility of constructing twist-secure curves. We construct several one-parameter families of elliptic curves over \(\mathbb {F}_{p^2}\) equipped with efficient endomorphisms for every \(p > 3\), and exhibit examples of twist-secure curves over \(\mathbb {F}_{p^2}\) for the efficient Mersenne prime \(p = 2^{127}-1\).     

An integrated charge-transfer relaxation oscillator without comparator

This letter presents a charge-transfer relaxation oscillator that achieves ultra-low power operation without comparator. The oscillator is implemented by charging or discharging the negative plate of the capacitor to a reference voltage through charge-transfer technique and the positive plate of the capacitor by a constant reference current, respectively. A special sawtooth waveform is generated, and a pseudo-inverter chain with delay compensation is adopted to determine the oscillation state. In the proposed structure, a conventional comparator has been eliminated to avoid comparator offset effect. The oscillator has been implemented with TSMC 0.18 \(\upmu \)m CMOS process. The circuit operates in subthreshold region and consumes a total power of 85 nW. The circuit demonstrates a frequency variation less than 0.8%/V over 1.2–1.8 V, leading to a temperature coefficient of 33 ppm/\(^{\circ }\)C over ? 40 to 80 \(^{\circ }\)C.     

Ultra-Fast Current Mode Sense Amplifier for Small $$I_{\mathrm{CELL}}$$ SRAM in FinFET with Improved Offset Tolerance

In this paper, a novel, high-performance and robust sense amplifier (SA) design is presented for small \(I_\mathrm{CELLl}\) SRAM, using fin-shaped field effect transistors (FinFET) in 22-nm technology. The technique offers data-line-isolated current sensing approach. Compared with the conventional CSA (CCSA) and hybrid SA (HSA), the proposed current feed-SA (CF-SA) demonstrates 2.15\(\times \) and 3.02\(\times \) higher differential current, respectively, for \({V}_{\mathrm{DD}}\) of 0.6 V. Our results indicate that even at the worst corner, CF-SA can provide 2.23\(\times \) and 1.7\(\times \) higher data-line differential voltage compared with CCSA and HSA, respectively. Further, 66.89 and 31.47 % reductions in the cell access time are achieved compared to the CCSA and HSA, respectively, under similar \(I_\mathrm{CELLl}\) and bit-line and data-line capacitance. Statistical simulations have proved that the CF-SA provides high read yield with 32.39 and 22.24 % less \(\upsigma _{\mathrm{Delay}}\). It also offers a much better read effectiveness and robustness against the data-line capacitance as well as \({V}_{\mathrm{DD}}\) variation. Furthermore, the CF-SA is able to tolerate a large offset of the input devices, up to 80 mV at \({V}_{\mathrm{DD}}=0.6\hbox {V}\).     

Stream Ciphers: A Practical Solution for Efficient Homomorphic-Ciphertext Compression

In typical applications of homomorphic encryption, the first step consists for Alice of encrypting some plaintext m under Bob’s public key \(\mathsf {pk}\) and of sending the ciphertext \(c = \mathsf {HE}_{\mathsf {pk}}(m)\) to some third-party evaluator Charlie. This paper specifically considers that first step, i.e., the problem of transmitting c as efficiently as possible from Alice to Charlie. As others suggested before, a form of compression is achieved using hybrid encryption. Given a symmetric encryption scheme \(\mathsf {E}\), Alice picks a random key k and sends a much smaller ciphertext \(c' = (\mathsf {HE}_{\mathsf {pk}}(k), \mathsf {E}_k(m))\) that Charlie decompresses homomorphically into the original c using a decryption circuit \(\mathcal {C}_{{\mathsf {E}^{-1}}}\). In this paper, we revisit that paradigm in light of its concrete implementation constraints, in particular \(\mathsf {E}\) is chosen to be an additive IV-based stream cipher. We investigate the performances offered in this context by Trivium, which belongs to the eSTREAM portfolio, and we also propose a variant with 128-bit security: Kreyvium. We show that Trivium, whose security has been firmly established for over a decade, and the new variant Kreyvium has excellent performance. We also describe a second construction, based on exponentiation in binary fields, which is impractical but sets the lowest depth record to \(8\) for \(128\)-bit security.     

A novel optimized neutrosophic <Emphasis Type="Italic">k</Emphasis>-means using genetic algorithm for skin lesion detection in dermoscopy images

This paper implemented a new skin lesion detection method based on the genetic algorithm (GA) for optimizing the neutrosophic set (NS) operation to reduce the indeterminacy on the dermoscopy images. Then, k-means clustering is applied to segment the skin lesion regions. Therefore, the proposed method is called optimized neutrosophic k-means (ONKM). On the training images set, an initial value of \(\alpha \) in the \(\alpha \)-mean operation of the NS is used with the GA to determine the optimized \(\alpha \) value. The Jaccard index is used as the fitness function during the optimization process. The GA found the optimal \(\alpha \) in the \(\alpha \)-mean operation as \(\alpha _{\mathrm{optimal}} =0.0014\) in the NS, which achieved the best performance using five fold cross-validation. Afterward, the dermoscopy images are transformed into the neutrosophic domain via three memberships, namely true, indeterminate, and false, using \(\alpha _{\mathrm{optimal}}\). The proposed ONKM method is carried out to segment the dermoscopy images. Different random subsets of 50 images from the ISIC 2016 challenge dataset are used from the training dataset during the fivefold cross-validation to train the proposed system and determine \(\alpha _{\mathrm{optimal}}\). Several evaluation metrics, namely the Dice coefficient, specificity, sensitivity, and accuracy, are measured for performance evaluation of the test images using the proposed ONKM method with \(\alpha _{\mathrm{optimal}} =0.0014\) compared to the k-means, and the \(\gamma \)–k-means methods. The results depicted the dominance of the ONKM method with \(99.29\pm 1.61\%\) average accuracy compared with k-means and \(\gamma \)–k-means methods.     

Topology Optimization of Segmented Thermoelectric Generators

The thermoelectric (TE) power output, \(f_P\), and conversion efficiency, \(f_{\eta }\), for segmented thermoelectric generators (TEGs) have been optimized by spatially distributing two TE materials (BiSbTe and Skutterudite) using a numerical gradient-based topology optimization approach. The material properties are temperature-dependent, and the segmented TEGs are designed for various heat transfer rates at the hot and cold reservoirs. The topology-optimized design solutions are characterized by spike-shaped features which enable the designs to operate in an intermediate state between the material phases. Important design parameters, such as the device dimensions, objective functions and heat transfer rates, are identified, investigated and discussed. Comparing the topology optimization approach with the classical segmentation approach, the performance improvements of \(f_P\) and \(f_{\eta }\) design problems depend on the heat transfer rates at the hot and the cold reservoirs, the objective function and the device dimensions. The largest performance improvements for the problems investigated are \(\approx \) 6%.     

Ab␣Initio Study of Aluminium Impurity and Interstitial-Substitutional Complexes in Ge Using a Hybrid Functional (HSE)

The results of an ab?initio modelling of aluminium substitutional impurity (\({\hbox {Al}}_{\rm Ge}\)), aluminium interstitial in Ge [\({\hbox {I}}_{\rm Al}\) for the tetrahedral (T) and hexagonal (H) configurations] and aluminium interstitial-substitutional pairs in Ge (\({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\)) are presented. For all calculations, the hybrid functional of Heyd, Scuseria, and Ernzerhof in the framework of density functional theory was used. Defects formation energies, charge state transition levels and minimum energy configurations of the \({\hbox {Al}}_{\rm Ge}\), \({\hbox {I}}_{\rm Al}\) and \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) were obtained for ?2, ?1, 0, \(+\)1 and \(+\)2 charge states. The calculated formation energy shows that for the neutral charge state, the \({\hbox {I}}_{\rm Al}\) is energetically more favourable in the T than the H configuration. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) forms with formation energies of ?2.37 eV and ?2.32 eV, when the interstitial atom is at the T and H sites, respectively. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) is energetically more favourable when the interstitial atom is at the T site with a binding energy of 0.8 eV. The \({\hbox {I}}_{\rm Al}\) in the T configuration, induced a deep donor (\(+\)2/\(+1\)) level at \(E_{\mathrm {V}}+0.23\) eV and the \({\hbox {Al}}_{\rm Ge}\) induced a single acceptor level (0/?1) at \(E_{\mathrm {V}}+0.14\) eV in the band gap of Ge. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) induced double-donor levels are at \(E_{\rm V}+0.06\) and \(E_{\rm V}+0.12\) eV, when the interstitial atom is at the T and H sites, respectively. The \({\hbox {I}}_{\rm Al}\) and \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) exhibit properties of charge state-controlled metastability.     

A 3.1–10.6 GHz UWB LNA Based on Self Cascode Technique for Improved Bandwidth and High Gain

In this work, we present a self cascode based ultra-wide band (UWB) low noise amplifier (LNA) with improved bandwidth and gain for 3.1–10.6 GHz wireless applications. The self cascode (SC) or split-length compensation technique is employed to improve the bandwidth and gain of the proposed LNA. The improvement in the bandwidth of SC based structure is around 1.22 GHz as compared to simple one. The significant enhancement in the characteristics of the introduced circuit is found without extra passive components. The SC based CS–CG structure in the proposed LNA uses the same DC current for operating first stage transistors. In the designed UWB LNA, a common source (CS) stage is used in the second stage to enhance the overall gain in the high frequency regime. With a standard 90 nm CMOS technology, the presented UWB LNA results in a gain \(\hbox {S}_{21}\) of \(20.10 \pm 1.65\,\hbox {dB}\) across the 3.1–10.6 GHz frequency range, and dissipating 11.52 mW power from a 1 V supply voltage. However, input reflection, \(\hbox {S}_{11}\), lies below \(-\,10\) dB from 4.9–9.1 GHz frequency. Moreover, the output reflection (\(\hbox {S}_{22}\)) and reverse isolation (\(\hbox {S}_{12}\)), is below \(-\,10\) and \(-\,48\) dB, respectively for the ultra-wide band region. Apart from this, the minimum noise figure (\(\hbox {NF}_{min}\)) value of the proposed UWB LNA exists in the range of 2.1–3 dB for 3.1–10.6 GHz frequency range with a a small variation of \(\pm \,0.45\,\hbox {dB}\) in its \(\hbox {NF}_{min}\) characteristics. Linearity of the designed LNA is analysed in terms of third order input intercept point (IIP3) whose value is \(-\,4.22\) dBm, when a two tone signal is applied at 6 GHz with a spacing of 10 MHz. The other important benefits of the proposed circuit are its group-delay variation and gain variation of \(\pm \,115\,\hbox {ps}\) and \(\pm \,1.65\,\hbox {dB}\), respectively.     

Minimizing the Two-Round Even–Mansour Cipher

The r-round (iterated) Even–Mansour cipher (also known as key-alternating cipher) defines a block cipher from r fixed public n-bit permutations \(P_1,\ldots ,P_r\) as follows: Given a sequence of n-bit round keys \(k_0,\ldots ,k_r\), an n-bit plaintext x is encrypted by xoring round key \(k_0\), applying permutation \(P_1\), xoring round key \(k_1\), etc. The (strong) pseudorandomness of this construction in the random permutation model (i.e., when the permutations \(P_1,\ldots ,P_r\) are public random permutation oracles that the adversary can query in a black-box way) was studied in a number of recent papers, culminating with the work of Chen and Steinberger (EUROCRYPT 2014), who proved that the r-round Even–Mansour cipher is indistinguishable from a truly random permutation up to \(\mathcal {O}(2^{\frac{rn}{r+1}})\) queries of any adaptive adversary (which is an optimal security bound since it matches a simple distinguishing attack). All results in this entire line of work share the common restriction that they only hold under the assumption that the round keys \(k_0,\ldots ,k_r\) and the permutations \(P_1,\ldots ,P_r\) are independent. In particular, for two rounds, the current state of knowledge is that the block cipher \(E(x)=k_2\oplus P_2(k_1\oplus P_1(k_0\oplus x))\) is provably secure up to \(\mathcal {O}(2^{2n/3})\) queries of the adversary, when \(k_0\), \(k_1\), and \(k_2\) are three independent n-bit keys, and \(P_1\) and \(P_2\) are two independent random n-bit permutations. In this paper, we ask whether one can obtain a similar bound for the two-round Even–Mansour cipher from just one n-bit key and one n-bit permutation. Our answer is positive: When the three n-bit round keys \(k_0\), \(k_1\), and \(k_2\) are adequately derived from an n-bit master key k, and the same permutation P is used in place of \(P_1\) and \(P_2\), we prove a qualitatively similar \(\widetilde{\mathcal {O}}(2^{2n/3})\) security bound (in the random permutation model). To the best of our knowledge, this is the first “beyond the birthday bound” security result for AES-like ciphers that does not assume independent round keys.     

Application of photonic crystal ring resonator nonlinear response for full-optical tunable add–drop filtering

In this paper, we investigate the application of Kerr-like nonlinear photonic crystal (PhC) ring resonator (PCRR) for realizing a tunable full-optical add–drop filter. We used silicon (Si) nano-crystal as the nonlinear material in pillar-based square lattice of a 2DPhC. The nonlinear section of PCRR is studied under three different scenarios: (1) first only the inner rods of PCRR are made of nonlinear materials, (2) only outer rods of PCRR have nonlinear response, and (3) both of inner and outer rods are made of nonlinear material. The simulation results indicate that optical power required to switch the state of PCRR from turn-on to turn-off, for the nonlinearity applied to inner PCRR, is at least \(2000\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) and, for the nonlinearity applied to outer PCRR, is at least \(3000\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) which corresponds to refractive index change of \(\Delta n_\mathrm{NL }= 0.085\) and \(\Delta n_\mathrm{NL }= 0.15\), respectively. For nonlinear tuning of add–drop filter, the minimum power required to 1 nm redshift the center operating wavelength \((\lambda _{0} = 1550\, \hbox {nm})\) for the inner PCRR scenario is \(125\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) (refractive index change of \(\Delta n_\mathrm{NL}= 0.005)\). Maximum allowed refractive index change for inner and outer scenarios before switch goes to saturation is \(\Delta n_\mathrm{NL }= 0.04\) (maximum tune-ability 8 nm) and \(\Delta n_\mathrm{NL }= 0.012\) (maximum tune-ability of 24 nm), respectively. Performance of add–drop filter is replicated by means of finite-difference time-domain method, and simulations displayed an ultra-compact size device with ultra-fast tune-ability speed.     

Secret-Sharing Schemes for Very Dense Graphs

A secret-sharing scheme realizes a graph if every two vertices connected by an edge can reconstruct the secret while every independent set in the graph does not get any information on the secret. Similar to secret-sharing schemes for general access structures, there are gaps between the known lower bounds and upper bounds on the share size for graphs. Motivated by the question of what makes a graph “hard” for secret-sharing schemes (that is, they require large shares), we study very dense graphs, that is, graphs whose complement contains few edges. We show that if a graph with \(n\) vertices contains \(\left( {\begin{array}{c}n\\ 2\end{array}}\right) -n^{1+\beta }\) edges for some constant \(0 \le \beta <1\), then there is a scheme realizing the graph with total share size of \(\tilde{O}(n^{5/4+3\beta /4})\). This should be compared to \(O(n^2/\log (n))\), the best upper bound known for the total share size in general graphs. Thus, if a graph is “hard,” then the graph and its complement should have many edges. We generalize these results to nearly complete \(k\)-homogeneous access structures for a constant \(k\). To complement our results, we prove lower bounds on the total share size for secret-sharing schemes realizing very dense graphs, e.g., for linear secret-sharing schemes, we prove a lower bound of \(\Omega (n^{1+\beta /2})\) for a graph with \(\left( {\begin{array}{c}n\\ 2\end{array}}\right) -n^{1+\beta }\) edges.     

Design of all-optical simultaneous AND,NAND, OR,and NOR logic gates using phase-based control of three coupled waveguides

In this paper, we present a novel phase-based structure for implementing the all-optical multi-function logic gates. The proposed structure which is composed of three coupled waveguides allows us to simultaneously access OR/NOR and AND/NAND logic functions from different output ports. The phase of middle waveguide plays the role of control tool which defines the logical values of outputs. The output ports can be switched from OR/NOR to AND/NAND logic functions by changing the control phase from 24\(^{\circ }\) to 237\(^{\circ }\), respectively. Beam propagation method has been employed in order to accomplish the simulations of light propagation.