Preparation and characterization of Z-type hexaferrites, Ba3(1−x)Sr3x Co2Fe24O41 with x = 0–0.5, via a two-step calcination with an intermediate wet milling

Z-type hexaferrites (Ba_{3(1 − x)}Sr_3x Co₂Fe₂₄O₄₁with x = 0–0.5, Z-hex) were prepared in a nearly phase pure state by a two-step calcination with an intermediate wet milling. The first calcination of the starting mixture comprising oxides or hydroxides at temperatures below 1100^∘C brought about a mixture of layer-structured M and Y-type hexaferrite phases, together with a spinel phase of Co ferrite. Z-hex was fully crystallized after the second calcination up to 1230^∘C. Wet milling between the two calcination steps was decisive for the phase purity. Emphasis was laid on the quantitative analyses of Z-hex, together with the evaluation of anisotropic growth of the crystallites. Sr addition stabilizes Z-hex, while decreases degree of anisotropy simultaneously.     

Ferroelectric properties of heterolayered lead zirconate titanate thin films

Heterolayered Pb(Zr_{1 − x} Ti _x )O₃ thin films consisting of alternating PbZr_0.7Ti_0.3O₃ and PbZr_0.3Ti_0.7O₃ layers were successfully deposited via a multistep sol-gel route assisted by spin-coating. These heterolayered PZT films, when annealed at a temperature in the range of 600–700^∘C show (001)/(100) preferred orientation, demonstrate desired ferroelectric and dielectric properties. The most interesting ferroelectric and dielectric properties were obtained from the six-layered PZT thin film annealed at 650^∘C, which exhibits a remanent polarization of 47.7 μC/cm² and a dielectric permittivity of 1002 at 100 Hz. Reversible polarization constituents a considerably high contribution towards the ferroelectric hysteresis of the heterolayered PZT films, as shown by studies obtained from C-V and AC measurement.     

Dielectric properties of ZnNb2 O 6 -TiO 2 mixture thin films

ZnNb₂O₆-TiO₂ mixture thin films with multilayer structures were fabricated via a sol-gel spin coating process. TiO₂ layers were deposited on the pre-crystallized ZnNb₂O₆ layers in order to suppress the formation of the ixiolite phase which always forms in the bulk system. The phase constitution of the thin films, confirmed by X-ray diffraction (XRD), could be controlled by the annealing temperatures, which, in turn, influenced the dielectric properties of the thin films. TiO₂ layers crystallized as the anatase phase and then transformed to the rutile phase at temperatures higher than 725^∘C. Dielectric constants of the mixture thin films, measured at 1 MHz with an MIM (metal-insulator-metal) structure, increased from 27 to 41 with dielectric losses below 0.005 as the annealing temperature increased from 700^∘C to 900^∘C. The increase in the dielectric constants was understood to originate from the increasing amounts of the rutile phase. Temperature coefficients of capacitance (TCC) were also measured between 25^∘C and 125^∘C, which showed a decreasing manner from positive values to negative values with increasing annealing temperatures. When annealed at 850^∘C, the TCC of the thin films could be tuned to be approximately 0 ppm/^oC with dielectric constant and dielectric loss of 36 and 0.002, respectively.     

Improvement of the thermal and chemical stability of Al doped ZnO films

To improve the stability of sputter-deposited ZnO:Al (AZO) films at high temperature above 300^∘C, an amorphous Zn-Sn-O (ZTO) film was deposited on the top of AZO films as an protective layer by co-sputtering of pure ZnO and SnO₂ targets. Amorphous ZTO films had resistivity in the range from 10⁻² to 10⁻³ Ωcm and were stable up to temperature of 400^∘C. Heat treatments of bare AZO films in the atmosphere at 400^∘C resulted in a dramatic increase in the resistivity accompanied by substantial decrease in carrier concentration and Hall mobility. The AZO films covered with the ZTO film showed remarkable improvement in thermal stability for subsequent heat treatments in the temperature range from 200 to 400^∘C in the atmosphere as well as chemical stability in weak acidic solution. X-ray photoelectron spectroscopy analysis showed that the improvement was attained by ZTO layer acting as diffusion barrier of oxygens and/or water vapors.     

The effect of alumina addition on the electrical conductivity of Gd-doped ceria

Acceptor doped-ceria is a possible electrolyte material for the IT-SOFC (intermediate temperature solid oxide fuel cell) due to its high oxygen-ion conductivity. However, its use has been limited by its mechanical weakness and the appearance of electronic conductivity in reducing condition. In this study, alumina was selected as an additive in the doped-ceria to see if it increases the oxygen-ion conductivity and mechanical strength. Effects of alumina addition in doped ceria were studied as a function of alumina content and acceptor (Gd) content. The electrical conductivity of (Ce_1−x Gd _x O_2−δ)_1−y + (Al₂O₃) _y (x = 0–0.35, y = 0–0.10) was measured by using impedance spectroscopy. The grain conductivity of Ce_0.8Gd_0.2O_2-δ (GDC20) with 5 mol% alumina increased ∼3 times from that of GDC20 at 300^∘C. The grain conductivity was even ∼2 times higher than that of Ce_0.9Gd_0.1O_2−δ (GDC10) at 300^∘C. The electrical conductivity of GDC20 without alumina addition, measured at 500^∘C in air, rapidly decreased after exposure to reducing condition (Po₂∼10⁻²² atm) at 800^∘C. However, the decrease was much slower in GDC20 with alumina addition, indicating the improved mechanical strength. Among the examined compositions, (Ce_0.75Gd_0.25 O_2-δ)_0.95 + (Al₂O₃)_0.05 (GDC25A5) showed the highest conductivity at most temperatures.     

Growth and magnetic properties of Mn and MnSn-doped ZnO nanorods

ZnO nanorods synthesized at 700^∘C by heating the mixture of solution processed Zn precursor with NaCl−Li₂CO₃ salt were examined. The size of the nanorods was in the range of 15–100 nm in diameter and 0.5–5 μm in length. The nanorods show the single crystal structure being free from second phases. The Mn and MnSn-doped nanorods by demonstrated ferromagnetic properties and unique luminescence properties due to doping and charge carrier confinement effects. Magnetic susceptibility of the samples as a function of temperature shows Curie–Weiss behavior. Hysteresis with the coercive field <200 Oe was clearly observed in magnetization versus field curves at 5 and 300 K. Increasing the Mn concentration increases significantly the magnetic hysteresis.     

Study of nanocrystal TiO2 thin films by thermal annealing

The amorphous films were annealed in a wide temperature range (250–1000^∘C) and film properties of TiO₂ thin films were studied. Nano-sized anatase polycrystallites had been induced by thermal annealing for the films annealed at and above 300^∘C as confirmed by X-ray diffraction. Strong LO-phonon Raman modes, especially B_1g (395 cm⁻¹) and E _g (636 cm⁻¹) in Raman spectra and the absorption peak at 436 cm⁻¹ in absorbance spectra by Fourier transform infrared spectroscopy also indicated the existence of anatase phase in crystalline thin films. In addition, with the increase of the annealing temperature, the wettability of the film surface was enhanced as shown by the decrease of water contact angle from over 90^∘ to less than 40^∘. Moreover, upon UV laser irradiation on film surface, the water contact angle saturated at 10^∘ indicative of a highly hydrophilic surface for all the films, which arose from the dissociative adsorption of water molecules on the defect sits of the surface generated by the photocatalysis reactions of TiO₂. This behavior makes the film a good potential candidate for self-clean coatings.     

Synthesis and sintering properties of (La0.8Ca0.2−x Sr x )CrO3 perovskite materials for SOFC interconnect

Synthesis and sintering properties of the (La_0.8Ca_0.2−x Sr _x )CrO₃ samples doped by two alkaline earth metals in comparison to the doped only by one alkaline earth metal were evaluated by phase analysis, sintering properties, thermal expansion behaviors, and electrical conductivity. The sintered (La_0.8Ca_0.2−x Sr _x )CrO₃ (x = 0, 0.05, and 0.1) and (La_0.8Ca_0.2−x Sr _x )CrO₃ (x = 0.2) were found to have orthorhombic and rhombohedral symmetries, respectively. Relative density of the (La_0.8Sr_0.2)CrO₃ sample sintered at 1500^∘C for 5 h was lower than that of the (La_0.8Ca_0.2−x Sr _x )CrO₃ (x = 0, 0.05, and 0.1) sample. TECs of the (La_0.8Ca_0.2−x Sr _x )CrO₃ (x = 0, 0.05, 0.1, and 0.2) in air were 11 × 10⁻⁶/^∘C, 11.2 × 10⁻⁶/^∘C, 11.2 × 10⁻⁶/^∘C, and 11.3 × 10⁻⁶/^∘C, respectively. The electric conductivity of the (La_0.8Ca_0.2−x Sr _x )CrO₃ sample was determined.     

Electrically conductive carbon-coated ceramic fiber media

Porous ceramic fiber composites were coated with pyrolytic carbon by the decomposition of either propane or infiltrated phenolic resin in a nitrogen atmosphere at 800–900^∘C. The amount of carbon coating was varied to tailor the electrical conductivity of the carbon-coated composites. The electrical and thermal conductivity of the composites were measured at room temperature using a two-point method and a hot-wire one, respectively. Up to 30 wt% pyrolytic carbon, the electrical conductivity σ showed linearly increasing tendency and was fitted by the effective conductivity according to the parallel rule of a mixture σ =ΣV _i⋅σ_i with an effective conductivity of pyrolytic carbon σ_c and volume fraction of coated carbon V _c. The electrical conductivity of coated carbons prepared from propane at 900^∘C and phenolic resin at 800^∘C was of the order of 10⁰ and 10⁻¹ S cm⁻¹, respectively.     

Calculation of the intrinsic dead layers thicknesses from Au/Ba0.5Sr0.5TiO3/Pt thin film capacitors

Ferroelectric Ba_0.5Sr_0.5TiO₃ (BST) films were prepared on Pt/Ti/SiO₂/Si substrates by the sol-gel process. The films were spin-coated at 2000 rpm for 30 secs and then pyrolysed for 5 mins at the temperature of 350^∘C. This coating procedure was repeated for 3, 4, 5 and 6 times to obtain BST films with different thicknesses. After coating the films with the desired repetition times, the films were finally annealed in a conventional furnace at temperatures ranging from 600^∘C to 800^∘C with a 50^∘C interval in between. The films obtained with an annealing procedure of 750^∘C were polycrystalline with the presence of an impurity BaCO₃ phase. The capacitance and leakage current were measured and used to extract information on the metal-BST interface. With the series capacitance model and modified Schottky emission equation, the thickness of the dead layers for Au/BST and Pt/BST interfaces were calculated to be less than 6 nm and 5 nm, respectively.     

Preparation and electrical properties of 0.4Pb(Zn1/3Nb2/3)O3-0.6Pb(Zr0.4Ti0.6)O3 thin films by 2-step annealing method

Films of (1−x)Pb(Zn_1/3Nb_2/3)O₃-xPb(Zr_0.4Ti_0.6) O₃ (x = 0.6, 40PZN-60PZT) were deposited on Pt/TiO₂/ SiO₂/Si substrate through spin coating. Using a combination of homogeneous precursor solution preparation and two-step pyrolysis process, we were able to obtain the 40PZN-60PZT thin films of perovskite phase virtually without pyrochlore phase precipitation after annealing above 650^∘C. But since annealing done at the high temperatures for extended time can cause diffusion of Pt, TiO₂ and Si, and precipitation of nonstoichiometric PbO, we adopted 2-step annealing method to circumvent these problems. The 2-step annealed films show dense microstructure than the 1-step films annealed at higher temperature. Furthermore, the root-mean-square surface roughness of 220 nm thick films which are annealed at 720^∘C for 1 min and then annealed at 650^∘C for 5 min was found to be 3.9 nm by atomic force microscopy as compared to the 12 nm surface roughness of the film annealed only at 720^∘C for 5 min. The electrical properties of 2-step annealed films are virtually same and those of the 1-step annealed films annealed at high temperature. The film 2-step annealed at 720^∘C for brief 1 min and with subsequent annealing at 650^∘C for 5 min showed a saturated hysteresis loop at an applied voltage of 5 V with remanent polarization (P _r) and coercive voltage (V _c) of 25.3 μC/cm² and 0.66 V respectively. The leakage current density was lower than 10⁻⁵A/cm² at an applied voltage of 5 V.     

Thermoelectric properties of p-type Bi0.5Sb1.5Te3 compounds fabricated by spark plasma sintering

P-type thermoelectric Bi_0.5Sb_1.5Te₃ compounds were prepared by the spark plasma sintering method with temperature ranges of 300–420^∘C and powder sizes of ∼75 μm, 76–150 μm, 151–250 μm. As the sintering temperature increased, the electrical resistivity and thermal conductivity of the compound were greatly changed due to an increase in the relative density. The Seebeck coefficient and electrical resistivity were varied largely with decreasing the powder size. Subsequently, the compound sintered at 380^∘C with the powders of ∼75 μm showed the maximum figure-of-merit of 2.65 × 10⁻³K⁻¹ and the bending strength of 73 MPa.     

Influence of microstructure on oxide ionic conductivity in doped CeO2 electrolytes

Doped ceria (CeO₂) compounds are fluorite type oxides, which show oxide ionic conductivity higher than yttria stabilized zirconia, in oxidizing atmospheres. As a consequence of this, considerable interest has been shown in application of these materials for `low (500^∘–650^∘C)’ temperature operation of solid oxide fuel cells (SOFCs). In this study, some rare earth (eg. Gd, Sm, and Dy) doped CeO₂ nano-powders were synthesized via a carbonate co-precipitation method. Fluorite-type solid solution were able to be formed at low temperature, such as 400^∘C and dense sintered bodies were subsequently fabricated in the temperature ranging from 1000^∘ to 1450^∘C by conventional sintering (CS) method. To develop high quality solid electrolytes, the microstructure at the atomic level of these doped CeO₂ solid electrolytes were examined using transmission electron microscopy (TEM). The specimens obtained by CS had continuous and large micro-domains with a distorted pyrochlore structure or related structure, within each grain. We conclude that the conducting properties in these doped CeO₂ systems are strongly influenced by the micro-domain size in the grain. To minimize the micro-domain size, spark plasma sintering (SPS) was examined. SPS has not been used to fabricate dense sintered bodies of doped CeO₂ electrolytes, previously; carbon from the graphite dies penetrates the specimens and inhibits densification. To overcome this challenge, and to be able to produce dense sintered bodies of doped CeO₂ of a grain size that minimizes the microdomain growth, a combination of SPS and CS methods were examined. Using this combined method we report that we were able to produce fully dense specimens with improved conductivity. This is correlated with a reduction in the size of the micro-domains. Consequently we conclude that the control of micro-domain size within the grain structure is a key component in the successful design of electrolyte materials with improved conductivity.     

ZnGa2O4 thin films fabricated by Sol-gel spinning coating process

ZnGa₂O₄ thin film phosphors have been synthesized on ITO coated glass and soda-lime glass at a firing temperature of 500^∘C and an annealing temperature of 500^∘C and 600^∘C via a chemical solution method using Zinc acetate dihydrate, Gallium nitrate hydrate and 2-methoxiethanol as a solution. XRD patterns of the film phosphors synthesized showed the peaks of ZnGa₂O₄ crystalline phases. AFM surface morphologies of the ZnGa₂O₄ thin film phosphors revealed marked differences according to an annealing temperature of 500^∘C and 600^∘C under an annealing atmosphere (3% H₂/Ar). On the other hand, the sheet resistance of ZnGa₂O₄ thin film phosphors, which were measured by four-point probe instrument, was approximately 5.76 Ω /square and 7.86 Ω /square with annealing temperature, respectively. The ZnGa₂O₄ thin film phosphors exhibited blue emission spectra with peak wavelength of 434 nm and 436 nm by ultra-violet excitation around 230 nm.     

Liquid phase low temperature sintering of niobate and cerate fine powders

The efficiency of simultaneous application of chemically-derived starting powders and melt-forming sintering aids in low temperature sintering has been demonstrated. Doping of cryochemically processed BiNbO₄ powders with CuO/V₂O₅ causes reducing sintering temperatures from 850–900^∘C to 700–720^∘C. Similar doping of Zn₃Nb₂O₈ fine powders allows to obtain ceramics with density 97–98% and Q × F values up to 40 000 GHz at T > 720^∘C. The sintering of solution-derived BaCeO₃ powders doped with CuO results in dense ceramics at T = 1000^∘C. Morphological evolution during sintering was observed using hot stage SEM. Low temperature liquid phase sintering of fine powders is rather sensitive to the traces of secondary phases and to the micromorphology of starting powders though observed reduction of sintering temperatures is substantially larger than for traditional liquid phase sintering of coarse-grained oxide powders.     

Synthesis and properties of ferroelectric Si-doped (Bi, Nd)4Ti3O12 thin films by chemical solution deposition

Ferroelectric Si-doped (Bi,Nd)₄Ti₃O₁₂ thin films have been prepared on Pt/TiO_x/SiO₂/Si substrates through metal-organic compounds by the chemical solution deposition. The Bi_3.25Nd_0.75Ti_2.9Si_0.1O₁₂ (BNTS) precursor films were found to crystallize into the Bi-layered perovskite Bi₄Ti₃O₁₂ single-phase above 600^∘C. The synthesized BNTS films revealed a random orientation having a strong 117 reflection. The BNTS thin films prepared between 600^∘C and 700^∘C showed well-saturated P-E hysteresis loops with P _r of 13–14 μ C/cm² and E _c of 100–110 kV/cm at an applied voltage of 5 V. The surface roughness of the BNTS thin films was improved by Si doping compared with that of undoped Bi_3.35Nd_0.75Ti₃O₁₂ films.     

Synthesis of Pb(Ni1/3Nb2/3)0.72Ti0.28O3 perovskite ceramics by a reaction-sintering process

Pb(Ni_1/3Nb_2/3)_0.72Ti_0.28O₃ (PNNT) perovskite ceramics produced by a reaction-sintering process were investigated. Without any calcination, the mixture of PbO, Ni(NO₃)₂, Nb₂O₅ and TiO₂ was pressed and sintered directly into PNNT ceramics. PNNT ceramics of 100% perovskite phase were obtained. For PNNT sintered for 2 h in PbO compensated atmosphere, maximum density reaches a value 8.49 g/cm³ (99.8% of the theoretical value) at 1250^∘C. A maximum dielectric constant 20600 occurred around 37^∘C at 1 kHz in PNNT sintered at 1250^∘C for 2 h.     

Thermal and dielectric properties of ZnO-B2O3-MO3glasses (M = W, Mo)

Glasses in the ZnO-B₂O₃-MO₃(M = W, Mo) ternary were examined as potential replacements to PbO-B₂O₃-SiO₂-ZnO glass frits with the low firing temperature (500–600^∘C) for the dielectric layer of a plasma display panels (PDPs). Glasses were melted in air at 950–1150^∘C in a narrow region of the ternary using standard reagent grade materials. The glasses were evaluated for glass transition temperature (T _g ), softening temperature (T _d ), the coefficient of thermal expansion (CTE), dielectric constant (ε _r ), and optical property. The glass transition temperature of the glasses varied between 470 and 560^∘C. The coefficient of thermal expansion and the dielectric constant of the glasses were in the range of 5–8 × 10^{− 6}/^∘C and 8–10, respectively. The addition of MO₃to ZnO-B₂O₃binary could induce the expansion of glass forming region, the reduction of T _g and the increase in the CTE and the dielectric constant of the glasses. Also, the effect of the addition of MO₃to ZnO-B₂O₃binary on the transmittance in the visible-light region (350–700 nm) was investigated.     

Ni-Cu-Zn Ferrites for Low Temperature Firing: I. Ferrite Composition and its Effect on Sintering Behavior and Permeability

Ni-Cu-Zn ferrites of composition Ni_{1 − x − y}Cu_yZn_xFe₂O₄ with 0.4 ≰ x ≰ 0.6 and 0 ≰ y ≰ 0.25 were prepared by standard ceramic processing routes. The density of samples sintered at 900^∘C increases with copper concentration y. Dilatometry reveals a significant decrease of the temperature of maximum shrinkage with y. The permeability has maximum values of μ = 500–1000 for x = 0.6. The Curie temperature is sensitive to composition and changes form about 150^∘C for x = 0.6 to T_c > 250^∘C for x = 0.4, almost independent on the Cu-content. A small iron deficiency in Ni_0.20Cu_0.20Zn_{0.60 + z}Fe_{2 − z}O_{4 − (z/2)} with 0 ≰ z ≰ 0.06 significantly enhances the density of samples sintered at 900^∘C. The maximum shrinkage rate is shifted to T < 900^∘C. These compositions are therefore appropriate for application in low temperature co-firing processes. The permeability is reduced with z, hence a small z = 0.02 seems to be the optimum ferrite composition for high sintering activity and permeability.     

Optical Properties of LiTaO3 Thin films crystallized by RTA processes

High-performance pyroelectric infrared detectors have been fabricated using Lithium tantalite (LiTaO₃) thin films deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by diol-based sol-gel method and rapid thermal annealing (RTA) technique. The dielectric and pyroelectric properties of IR detectors of LiTaO₃ thin films crystallized by conventional and RTA processes are investigated. Experimental results reveal that the heating rate will influence strongly on dielectricity and pyroelectricity of LiTaO₃ thin films. The voltage responsivities (Rv) measured at 80 Hz increase from 5496 to 8455 V/W and the specific detecivities (D^∗) measured at 300 Hz increase from 1.94 × 10⁸ to 2.38 × 10⁸ cmHz^1/2/W with an increase of heating rate from 600 to 1800^∘C/min. However, the voltage responsivity and the specific detecivity decrease with heating rate in excess of 1800^∘C/min. The results show that the LiTaO₃ thin film detector with a heating rate of 1800^∘C/min exists both the maximums of voltage responsivity and specific detecivity.