Nature of Intergranular Phase in Nonohmic ZnO Ceramics Containing 0.5 Mol% Bi2O3

The intergranular phase obtained by sintering a binary mixture of ZnO + 0.5 mol% Bi₂O₃ was isolated by using a dilute solution of HCIO₄, which etches ZnO preferentially. The combined results of selected-area electron diffraction and microscopy, microprobe analysis, and X-ray diffraction strongly indicate that the intergranular material is a polycrystalline phase of tetragonal β-Bi₂O₃ ( P 42₁ c ), rather than the amorphous ZnO-Bi₂O₃ phase reported earlier. It appears that the nonohmic behavior in this prototype metal-oxide varistor must be an interfacial property associated with the semiconducting ZnO grains separated by thin layers of high-resistivity Bi₂O₃.     

Grain Growth in Sintered ZnO and ZnO-Bi2O3 Ceramics

Grain growth in a high-purity ZnO and for the same ZnO with Bi₂O₃ additions from 0.5 to 4 wt% was studied for sintering from 900° to 1400°C in air. The results are discussed and compared with previous studies in terms of the phenomenological kinetic grain growth expression: G ⁿ— G ⁿ₀= K ₀ t exp(— Q/RT ). For the pure ZnO, the grain growth exponent or n value was observed to be 3 while the apparent activation energy was 224 ± 16 kJ/mol. These parameters substantiate the Gupta and Coble conclusion of a Zn²⁺ lattice diffusion mechanism. Additions of Bi₂O₃ to promote liquidphase sintering increased the ZnO grain size and the grain growth exponent to about 5, but reduced the apparent activation energy to about 150 kJ/mol, independent of Bi₂O₃ content. The preexponential term K ₀ was also independent of Bi₂O₃ content. It is concluded that the grain growth of ZnO in liquid-phase-sintered ZnO-Bi₂O₃ ceramics is controlled by the phase boundary reaction of the solid ZnO grains and the Bi₂O₃-rich liquid phase.     

Grain Growth of ZnO during Bi2O3 Liquid-Phase Sintering

Grain growth of ZnO during the liquid-phase sintering of binary ZnO–Bi₂O₃ ceramics has been studied for Bi₂O₃ contents from 3 to 12 wt% and sintering from 900° to 1400°C. The results are considered in combination with previously published studies of ZnO grain growth in the ZnO–Bi₂O₃ system. For the Bi₂O₃ contents of the present study, the rate of ZnO grain growth is found to decrease with increasing Bi₂O₃. Activation analysis, when combined with the results of similar analyses of the previous studies, reveals a change in the rate-controlling mechanism for ZnO grain growth. Following a low-Bi₂O₃-content region of nearly constant activation energy values of about 150 kJ/mol, further Bi₂O₃ additions cause an increase of the activation energy to about 270 kJ/mol. consistent with accepted models of liquid-phase sintering, it is concluded that the rate-controlling mechanism of ZnO grain growth during liquid-phase sintering in the presence of Bi₂O₃ changes from one of a phase-boundary reaction at low Bi₂O₃ levels to one of diffusion through the liquid phase at about the 5 to 6 wt% Bi₂O₃ level and above.     

Bi2O3 Vaporization in Microwave-Sintered ZnO Varistors

Vaporization of Bi₂O₃ in microwave-sintered ZnO varistors is discussed in this study. The Bi₂O₃ vaporization of ZnO varistors sintered by a conventional electric furnace is also studied for comparison. The results show that the Bi₂O₃ vaporization in microwave-sintered ZnO varistors is more homogenous from the surface to the inside of the sample, which results from the special thermal gradient inside the microwave-sintered samples, and we also find out that the Bi₂O₃ vaporization directly affects the electrical properties of ZnO varistors. Microwave-sintered samples exhibit more excellent electrical properties than the conventional ones because the homogenous Bi₂O₃ vaporization leads to more uniform microstructures.     

Differences in Wetting Characteristics of Bi2O3 Polymorphs in ZnO Varistor Materials

Detailed analysis of the microstructure of grain boundaries, especially triple-grain and multiple-grain junctions, in ZnO varistor materials has been performed using transmission electron microscopy. Different polymorphs of Bi₂O₃ are shown to exhibit different wetting properties on ZnO interfaces. Recent investigations suggest that the equilibrium configuration consists of crystalline Bi₂O₃ in the triple-grain and multiple-grain junctions and an amorphous bismuth-rich film in the ZnO/ZnO grain boundaries. The present investigation supports this suggestion for δ-Bi₂O₃ and also adds to the microstructural image and wetting properties of α-Bi₂O₃.     

Microstructure of Varistors Prepared with Zinc Oxide Nanoparticles Coated with Bi2O3

Zinc oxide (ZnO) nanoparticles coated with 1–5 wt% Bi₂O₃ were prepared by precipitating a Bi(NO₃)₃ solution onto a ZnO precursor. Transmission electron microscopy showed that a homogeneous Bi₂O₃ layer coated the surface of the ZnO nanoparticles and that the ZnO particle size was ∼30–50 nm. Scanning electron microscopy showed that ZnO grains sintered at 1150°C were homogeneous in size and surrounded by a uniform Bi₂O₃ layer. When the ZnO grains were surrounded fully by Bi₂O₃ liquid phases, further increases in the ZnO grain size were not affected by the Bi₂O₃ content. This predesigned ZnO nanoparticle structure was shown to promote homogeneous ZnO grains with perfect crystal growth.     

Nanopowder Preparation and Dielectric Properties of a Bi2O3–Nb2O5 Binary System Prepared by the High-Energy Ball-Milling Method

The high-energy ball-milling (HEM) method was used to synthesize the compositions of BiNbO₄, Bi₅Nb₃O₁₅, and Bi₃NbO₇ in a Bi₂O₃–Nb₂O₅ binary system. Reagent Bi₂O₃ and Nb₂O₅ were chosen as the starting materials. The X-ray diffraction patterns of the three compositions milled for different times were studied. Only the cubic Bi₃NbO₇ phase, Nb₂O₅, and amorphous matters were observed in powders after being milled for 10 h. After heating at proper temperatures the amorphous matters disappeared and the proleptic phases of BiNbO₄ and Bi₅Nb₃O₁₅ could be obtained. The Scherrer formula was used to calculate the crystal size and the results of nanopowders are between 10 and 20 nm. The scanning electron microscopy photos of Bi₃NbO₇ powders showed drastic aggregation, and the particle size was about 100 nm. The dielectric properties of ceramics sintered from the nanopowders prepared by HEM at 100–1 MHz and the microwave region were measured. Bi₃NbO₇ ceramics showed a good microwave permittivity ɛ_r of about 80 and a Q × f of about 300 at 5 GHz. The triclinic phase of BiNbO₄ ceramics reached its best properties with ɛ_r=24 and Q × f =14 000 GHz at about 8 GHz.     

The Bi2O3–Nb2O5–NiO Phase Diagram

The Bi₂O₃–Nb₂O₅–NiO phase diagram at 1100°C was determined by means of solid-state synthesis, X-ray diffraction, and scanning electron microscopy. A ternary eutectic with a melting point below 1100°C was found to exist in the field between NiO, Bi₂O₃, and the end-member of the δBi₂O₃–Nb₂O₅ solid solution. The existence of the previously reported Bi₃Ni₂NbO₉ phase was disproved. A pyrochlore homogeneity range around Bi_1.5Ni_0.67Nb_1.33O_6.25 was determined together with all the phase relations in this phase diagram.     

Pore–Boundary Separation Behavior during Sintering of Pure and Bi2O3-Doped ZnO Ceramics

Pore–boundary separation in ZnO and 99.95ZnO·0.05Bi₂O₃ (in mol%) specimens during sintering at 1200°C was investigated. In pure ZnO specimens, pores were attached to the grain boundaries and disappeared during the final stage of sintering. In the Bi₂O₃-doped specimens, on the other hand, many pores were separated from the boundaries and trapped inside the grains. Observation using transmission electron microscopy showed that a thin layer of Bi₂O₃-rich phase existed at the boundaries in the Bi₂O₃-doped specimens. The pore separation in 99.95ZnO·0.05Bi₂O₃ specimens was explained in terms of the dihedral angle change and the high mobility of a liquid film boundary.     

Subsolidus Phase Equilibria in the System Bi2O3-TiO2-Nb2O5

The subsolidus phase equilibria in the system Bi₂O₃-TiO₂-Nb₂O₅ at 1100°C were determined by solid-state reaction techniques and X-ray powder diffraction methods. The system was found to contain 4 ternary compounds, i.e. Bi₃TiNbO₉, Bi₇Ti₄NbO₂₁, a cubic pyrochlore solid solution having a compositional range of 3Bi₂O₃· x TiO₂ (7– x )Nb₂O₅ where x ranges from 2.3 to 6.75, and an unidentified phase, 4Bi₂O₃·11TiO₂·5Nb₂O₅.     

Crystalline Phases and YAG Laser-Induced Crystallization in Sm2O3–Bi2O3–B2O3 Glasses

The glass formation region, crystalline phases, second harmonic (SH) generation, and Nd:yttrium aluminum garnet (YAG) laser-induced crystallization in the Sm₂O₃–Bi₂O₃–B₂O₃ system were clarified. The crystalline phases of Bi₄B₂O₉, Bi₃B₅O₁₂, BiBO₃, Sm _x Bi_{1− x} BO₃, and SmB₃O₆ were formed through the usual crystallization in an electric furnace. The crystallized glasses consisting of BiBO₃ and Sm _x Bi_{1− x} BO₃ showed SH generations. The formation of the nonlinear optical BiB₃O₆ phase was not confirmed. The formation (writing) region of crystal lines consisting of Sm _x Bi_{1− x} BO₃ by YAG laser irradiation was determined, in which Sm₂O₃ contents were∼10 mol%. The present study demonstrates that Sm₂O₃–Bi₂O₃–B₂O₃ glasses are promising materials for optical functional applications.     

Origin of Solid-State Activated Sintering in Bi2O3-Doped ZnO

Activated sintering in Bi₂O₃-doped ZnO has been studied with emphasis on the mechanistic role of intergranular amorphous films. The atomic-level microstructures and bismuth solute distributions in doped powders have been investigated using high-resolution electron microscopy and scanning transmission electron microscopy. Densification is observed to be significant below the bulk eutectic temperature in the presence of Bi₂O₃ concentrations as low as 0.58 mol%. Transmission electron microscopy of as-calcined and sintered powders shows that significant neck growth and particle coarsening occur in the solid state. Intergranular amorphous films of ∼1 nm thickness, terminating in wetting menisci at sinter-necks, are observed to form concurrently with the onset of activated sintering. In a few instances, amorphous films are also observed at surfaces of the ZnO particles. These films appear to be the free-surface counterpart to equilibrium-thickness intergranular films. Activated sintering in this binary system is attributed to rapid mass transport through subeutectic, equilibrium-thickness intergranular films, with the amorphous phase also providing capillary pressure.     

Microstructure, Piezoelectric, and Ferroelectric Properties of Bi2O3-Added (K0.5Na0.5)NbO3 Lead-Free Ceramics

Lead-free piezoelectric (K_0.5Na_0.5)NbO₃– x wt% Bi₂O₃ ceramics have been synthesized by an ordinary sintering technique. The addition of Bi₂O₃ increases the melting point of the system and improves the sintering temperature of (K_0.5Na_0.5)NbO₃ ceramics. All samples show a pure perovskite phase with a typical orthorhombic symmetry when the Bi₂O₃ content <0.7 wt%. The phase transition temperature of orthorhombic–tetragonal ( T _{O − T} ) and tetragonal–cubic ( T _C) slightly decreased when a small amount of Bi₂O₃ was added. The remnant polarization P _r increased and the coercive field E _c decreased with increasing addition of Bi₂O₃. The piezoelectric properties of (K_0.5Na_0.5)NbO₃ ceramics increased when a small amount of Bi₂O₃ was added. The optimum piezoelectric properties are d ₃₃=140 pC/N, k _p=0.46, Q _m=167, and T _C=410°C for (K_0.5Na_0.5)NbO₃–0.5 wt% Bi₂O₃ ceramics.     

Extended Defects in ZnO Ceramics Containing Bi4Ti3O12 Additive

Extended defects in ZnO ceramics containing, 6 wt% Bi₄Ti₃O₁₂ were studied by analytical electron microscopy. Apart from basal plane condensation stacking faults, which are also present in as-received ZnO, extended defects related to the presence of Bi₄Ti₃O₁₂ were observed. In samples sintered at 900°C they lie in the basal or in the prismatic     planes and they quite often form closed loops, whereas they form serpentine-shaped boundaries in samples sintered at 1200°C. Evidence is given that they are inversion boundaries. Their TEM image characteristics, as well as the unambiguous presence of Ti at the boundaries, suggest that they are formed due to the presence of 2-D coherent precipitates of Ti-rich (possibly Zn₂TiO₄-type spinel) phase.     

Phase Relations in the System Bi2O3-WO3

Phase relations in the system Bi₂O₃-WO₃ were studied from 500° to 1100°C. Four intermediate phases, 7Bi₂O₃· WO₃, 7Bi₂O₃· 2WO₃, Bi₂O₃· WO₃, and Bi₂O₃· 2WO₃, were found. The 7B₂O · WO₃ phase is tetragonal with a ₀= 5.52 Å and c ₀= 17.39 Å and transforms to the fcc structure at 784°C; 7Bi₂O₃· 2WO₃ has the fcc structure and forms an extensive range of solid solutions in the system. Both Bi₂O₃· WO₃ and Bi₂O₃· 2WO₃ are orthorhombic with (in Å) a ₀= 5.45, b ₀=5.46, c ₀= 16.42 and a ₀= 5.42, b ₀= 5.41, c ₀= 23.7, respectively. Two eutectic points and one peritectic exist in the system at, respectively, 905°± 3°C and 64 mol% WO₃, 907°± 3°C and 70 mol% WO₃, and 965°± 5°C and 10 mol% WO₃.     

The System Bi2O3-SiO2

The Bi₂O₃-rich side of the system Bi₂O₃-SiO₂ was studied with powder X-ray diffraction and differential thermal analysis. In the composition 6Bi₂O₃. x SiO₂, the metastable γ phase (bcc) was observed to exist over the range of 0 < x ≤ 1. In most of the compositions studied, metastable phases of water-quenched melts transformed into another metastable phase before reaching stable phases. A modification of the phase diagram is proposed.     

Effect of La Doping on the Phase Conversion, Microstructure Change, and Electrical Properties of Bi2Fe4O9 Ceramics

Undoped and La-doped Bi₂Fe₄O₉ ceramics were synthesized using a soft chemical method. It is observed that in calcining La-doped Bi₂Fe₄O₉, Bi(La)FeO₃ phase rather than Bi_{2− x} La _x Fe₄O₉ gradually increases with increasing La doping content. The phase conversion from mullite-type structure of Bi₂Fe₄O₉ to rhombohedrally distorted perovskite one of Bi(La)FeO₃ with increasing La doping content indicates that La doping can stabilize the structure of BiFeO₃. This is further evidenced that Bi₂Fe₄O₉ can be directly converted to Bi(La)FeO₃ by heating the mixtures of nominal composition of Bi₂Fe₄O₉/ x La₂O₃. Furthermore, the microstructure changes and the room temperature hysteresis loops and leakage current for Bi_{2− x} La _x Fe₄O₉ with x =0 and 0.02 were characterized.     

Phase Relations in the Pyrochlore-Rich Part of the Bi2O3−TiO2−Nd2O3 System

In this study we used solid-state synthesis to determine the phase relations in the pyrochlore-rich part of the Bi₂O₃−TiO₂−Nd₂O₃ system at 1100°C. The samples were analyzed using X-ray powder diffraction and scanning electron microscopy with energy- and wavelength-dispersive spectroscopy. A single-phase pyrochlore ceramic was obtained with the addition of 4.5 mol% of Nd₂O₃. We determined the solubility limits for the three solid solutions: (i) the pyrochlore solid solution Bi_{(1.6–1.08 x )}Nd _x Ti₂O_{(6.4+0.3 x )}, where 0.25< x <0.96; (ii) the solid solution Bi_{4− x} Nd _x Ti₃O₁₂, where 0< x <2.6; and (iii) the Nd_{2− x} Bi _x Ti₂O₇ solid solution, where 0< x <0.35. The determined phase relations in the pyrochlore-rich part are presented in a partial phase diagram of the Bi₂O₃−TiO₂−Nd₂O₃ system in air at 1100°C.     

Grain Growth of ZnO in ZnO-Bl2O3 Ceramics with Ai2O3 Additions

Grain growth of ZnO during liquid-phase sintering of a ZnO-6 wt% Bi₂O₃ ceramic was investigated for A1₂O₃ additions from 0.10 to 0.80 wt%. Sintering in air for 0.5 to 4 h at 900° to 1400°C was studied. The AI₂O₃ reacted with the ZnO to form ZnAl₂O₄ spinel, which reduced the rate of ZnO grain growth. The ZnO grain-growth exponent was determined to be 4 and the activation energy for ZnO grain growth was estimated to be 400 kJ/mol. These values were compared with the activation parameters for ZnO grain growth in other ceramic systems. It was confirmed that the reduced ZnO grain growth was a result of ZnAl₂O₄ spinel particles pinning the ZnO grain boundaries and reducing their mobility, which explained the grain-growth exponent of 4. It was concluded that the 400 kJ/mol activation energy was related to the transport of the ZnAl₂O₄ spinel particles, most probably controlled by the diffusion of O^2- in the ZnAl₂O₄ spinel structure.     

Low Breakdown Voltage Varistors by Grain Boundary Diffusion of Molten Bi2O3 in ZnO

Diffusion of molten Bi₂O₃ into the grain boundaries of sintered, alumina-doped (0.23 and 0.7 mol%) ZnO pellets resulted in varistors with breakdown voltages in the 3–5 V range and nonlinearity coefficients of 10–24. The varistors were fabricated by spreading a thin layer of Bi₂O₃ powder on the surface of ZnO pellets and heating the combination to various temperatures (860–1155°C) and different times. The highest nonlinearity coefficients (20–24) and lowest breakdown voltages (3–5 V) were recorded in samples annealed at 860°C for 35 min. Longer annealing times and/or higher temperatures resulted in progressively higher breakdown voltages. Eventually the devices became insulating, which was attributed to the formation of an insulating Bi₂O₃ layer between the grains. Separate wetting experiments have shown that the penetration of Bi₂O₃ into ZnO grain boundaries was a strong function of alumina doping —the penetration rate was decreased by a factor of 5–7 as the ZnO was doped with as little as 0.2 mol% alumina. It is this slowing down of the penetration of the ZnO grain boundaries that is believed to be critical in the development of the low breakdown voltages observed.