共查询到20条相似文献,搜索用时 15 毫秒
1.
Fukushima T. Kasukawa A. Iwase M. Namegaya T. Shibata M. 《Photonics Technology Letters, IEEE》1993,5(2):117-119
It is demonstrated for the first time that compressively strained InAsP/InP double quantum-well (DQW) lasers emitting at 1.3 μm performed a very small turn-on delay time by a significant reduction in threshold current. Lasers with 200 μm cavity length and high reflection coating achieved both very low threshold current of 1.8 mA and a small turn-on delay time (200 ps) even under a bias-less 30 mA pulse current. An additional power penalty was simulated, and it was shown that these small-delay and low-threshold performances are suitable for high-speed optical parallel data transmitters in computer networks 相似文献
2.
Razeghi M. Hersee S. Hirtz P. Blondeau R. de Cremoux B. Duchemin J.P. 《Electronics letters》1983,19(9):336-337
Room-temperature GaInAsP/InP DH lasers emitting at 1.3 ?m and having very low threshold current densities have been grown by LP MOCVD. Thresholds were lower than the best values reported for comparable devices grown by LPE, the lowest threshold being 430 A/cm2 for a cavity length of 950 ?m (width 150 ?m) with an active-layer thickness of d = 2200 A. 相似文献
3.
Fukushima T. Kasukawa A. Iwase M. Namegaya T. Shibata M. 《Quantum Electronics, IEEE Journal of》1993,29(6):1536-1543
Turn-on delay times in the pulse response of compressively strained InAsP/InP double-quantum-well (DOW) lasers and GaInAsP/InP multiple-quantum-well (MQW) lasers emitting at 1.3 μm were investigated. DQW lasers with 200-μm cavity length and high-reflection coating achieved both a very low threshold current (1.8 mA) and a small turn-on delay time (200 ps), even under a biasless 30-mA pulse current. Compressively strained or lattice-matched GaInAsP MQW lasers and GaInAsP double-heterostructure (DH) lasers were also fabricated and compared. It was observed that the carrier lifetime was enhanced for InAsP DQW lasers and strained GaInAsP MQW lasers compared to the lattice-matched GaInAsP MQW lasers and conventional double-heterostructure lasers. To explain this increase in the carrier lifetime, the effect of the carrier transport on the carrier lifetime was studied. The additional power penalty due to the laser turn-on delay was simulated and is discussed 相似文献
4.
A record low threshold current of 0.56 mA, as a long-wavelength laser, has been obtained in a 1.3 μm InGaAsP/InP strained-MQW laser, at room temperature (25°C), by optimising an active layer and by employing a short cavity with high-reflection coatings 相似文献
5.
1.55 μm GaInAsP/InP DFB-BH LDs on corrugated InP substrates were fabricated by only two-stage MOVPE including burying layer growth. The 9 mA minimum threshold current was achieved with both facets cleaved, which the authors believe is the lowest among MOVPE grown DFB LDs with InP grating. Up to 20 mW maximum output power and 0.21 W/A differential quantum efficiency were also attained under single longitudinal mode operation 相似文献
6.
Room-temperature operation of InGaAsP-InP double-heterostructure lasers grown by atmospheric pressure metalorganic chemical vapour deposition is reported. Optically pumped laser operation at 1.36 ?m and 1.45 ?m has been achieved and broad-area injection lasers operating at 1.37 ?m with threshold current densities as low as 3.6 kA/cm2 have been demonstrated. 相似文献
7.
Using MOVPE, we fabricated strained quantum well 1.3 μm lasers with an InGaP cladding layer on a GaAs substrate. The lasers had a high gain coefficient of 60 cm-1. Lasers with high reflection facets had a low threshold current density of 500 A/cm2, and a high characteristic temperature of 100 K 相似文献
8.
1.52 μm GaInAsP/InP DFB laser diodes with a buried ridge structure were fabricated entirely by MOCVD, with a second-order corrugation on the GaInAsP guiding layer. The 5 mA minimum threshold current achieved is believed to be the lowest yet reported for DFB lasers. Single longitudinal-mode operation with a side-mode suppression ratio greater than 35 dB was obtained from 20°C (up to 16 mW) to 90°C (up to 3 mW) 相似文献
9.
Room temperature pulsed lasing operation of a 1.3-μm GaInAsP/InP vertical-cavity surface-emitting laser has been achieved by using an effective carrier confinement of circular planar buried heterostructure (CPBH) and high reflectivity SiO2/Si dielectric multilayer mirrors. The threshold current for a device having a nearly 12-μm-diameter active region was 34 mA at 24°C under pulsed operation. The optimized window cap structure reduces the series resistance to 6~15 Ω. Continuous wave lasing was also obtained up to -57°C, and the threshold below -61°C was still lower than 22 mA 相似文献
10.
Mathur A. Osinski J.S. Grodzinski P. Dapkus P.D. 《Photonics Technology Letters, IEEE》1993,5(7):753-755
A study of the effects of biaxial strain on the performance of low-threshold 1.3-μm InxGa1-xAsyP 1-y/InP quantum-well lasers is presented. Lasers with lattice-matched, compressive-strained, and tensile-strained quantum-wells were fabricated to compare the effect of strain on various device parameters. Threshold current densities as low as 187 A/cm2 for a two-quantum-well device with 0.85% compressive strain were obtained 相似文献
11.
Springthorpe A.J. Garanzotis T. Paddon P. Pakulski G. White K.I. 《Electronics letters》2000,36(12):1031-1032
AlGaInAs strained MQW lasers, emitting at 1.3 μm, have been prepared for the first time using a digital alloy approach. 2 μm stripe geometry lasers have characteristics comparable to those of lasers prepared using bulk alloy layers. The infinite length threshold current densities are as low as 140 kA/cm2/quantum well and T 0 values (20-40°C) range from 75-90 K for chip lengths of 375-2375 μm 相似文献
12.
Room-temperature pulsed operation has been achieved at and below 1.3 ?m for GaInAsP/InP lasers grown by atmospheric-pressure metalorganic vapour phase epitaxy. Thresholds as low as 1.0 kA/cm2 (for a cavity length of 1000 ?m) have been obtained. 相似文献
13.
Room temperature pulsed operation has been achieved in the 1.2?1.3 ?m region for GaInAsP/InP lasers grown by low pressure metalorganic vapour phase epitaxy. Thresholds as low as 1.2 kA/cm2 and threshold temperature dependences of exp T/T0, with T0 up to 80 K, have been obtained. 相似文献
14.
We report the first successful preparation of current-injection GaInAsP/InP double-heterostructure laser lasing at 1.3 ?m by molecular beam epitaxy. For broad-area Fabry-Perot diodes of 380 ?m×200 ?m and an active layer thickness of 0.2 ?m, we have observed threshold current densities Jth as low as 1.8 kA/cm2 and a median Jth?3.5 kA/cm2. 相似文献
15.
Takeuchi T. Chang Y.-L. Leary M. Tandon A. Luan H.-C. Bour D. Corzine S. Twist R. Tan M. 《Electronics letters》2002,38(23):1438-1440
The first InGaAsN VCSELs grown by MOCVD with CW lasing wavelength longer than 1.3 /spl mu/m are reported. The devices were of conventional p-i-n structure with doped DBR mirrors. CW lasing up to 65/spl deg/C was observed, with a maximum output power at room temperature of 0.8 mW for multimode devices and nearly 0.3 mW for single-mode devices. 相似文献
16.
Reductions in carrier lifetime, threshold current, and thus turn-on delay time, due to n-type modulation doping, have been experimentally demonstrated in 1.3 μm InGaAsP strained multiquantum well lasers for the first time 相似文献
17.
Fukushima T. Matsumoto N. Nakayama H. Ikegami Y. Namegaya T. Kasukawa A. Shibata M. 《Photonics Technology Letters, IEEE》1993,5(9):963-965
Compressively strained 1.3-μm GaInAsP/InP multiple-quantum-well (MQW) ridge waveguide lasers were fabricated. Through optimizing the total well thickness, large bandwidth over 11 GHz was achieved, together with high quantum efficiency of about 0.48 W/A and high power output of 60 mW before rollover. The laser also showed less temperature sensitivity up to an elevated temperature of 85°C 相似文献
18.
19.
Application of a novel InAsN alloy on a laser device is reported for the first time. The four-period InAs0.97N0.03-In0.53Ga0.47 As-InP strained multiple quantum well laser, grown by gas source molecular beam epitaxy with an RF-coupled plasma nitrogen source, lased under pulsed operation at 2.38 μm at 260 K. A threshold current density of 3.6 KA/cm2 at 260 K and a characteristic temperature of 62 K have been achieved 相似文献
20.
Sagnes I. Le Roux G. Meriadec C. Mereuta A. Saint-Girons G. Bensoussan M. 《Electronics letters》2001,37(8):500-501
A new MOCVD InP/AlGaInAs distributed Bragg reflector for long-wavelength VCSELs is presented. The InP/AlGaInAs system presents a high potential for 1.55 μm VCSELs owing to the combination of its high refractive index contrast (Δn≃0.34) and its low conduction band discontinuity (ΔEc≃150 meV). InP/AlGaInAs mirrors and one half VCSEL (bottom mirror and λ cavity) have been fabricated for the first time using AlGaInAs transparent to 1.55 μm 相似文献