Small turn-on delay time in 1.3 μm InAsP/InP strained doublequantum-well lasers with very-low threshold current

It is demonstrated for the first time that compressively strained InAsP/InP double quantum-well (DQW) lasers emitting at 1.3 μm performed a very small turn-on delay time by a significant reduction in threshold current. Lasers with 200 μm cavity length and high reflection coating achieved both very low threshold current of 1.8 mA and a small turn-on delay time (200 ps) even under a bias-less 30 mA pulse current. An additional power penalty was simulated, and it was shown that these small-delay and low-threshold performances are suitable for high-speed optical parallel data transmitters in computer networks     

Very low threshold GaInAsP/InP double-heterostructure lasers grown by LP MOCVD

Room-temperature GaInAsP/InP DH lasers emitting at 1.3 ?m and having very low threshold current densities have been grown by LP MOCVD. Thresholds were lower than the best values reported for comparable devices grown by LPE, the lowest threshold being 430 A/cm2 for a cavity length of 950 ?m (width 150 ?m) with an active-layer thickness of d = 2200 A.     

Compressively strained 1.3 μm InAsP/InP and GaInAsP/InP multiplequantum well lasers for high-speed parallel data transmission systems

Turn-on delay times in the pulse response of compressively strained InAsP/InP double-quantum-well (DOW) lasers and GaInAsP/InP multiple-quantum-well (MQW) lasers emitting at 1.3 μm were investigated. DQW lasers with 200-μm cavity length and high-reflection coating achieved both a very low threshold current (1.8 mA) and a small turn-on delay time (200 ps), even under a biasless 30-mA pulse current. Compressively strained or lattice-matched GaInAsP MQW lasers and GaInAsP double-heterostructure (DH) lasers were also fabricated and compared. It was observed that the carrier lifetime was enhanced for InAsP DQW lasers and strained GaInAsP MQW lasers compared to the lattice-matched GaInAsP MQW lasers and conventional double-heterostructure lasers. To explain this increase in the carrier lifetime, the effect of the carrier transport on the carrier lifetime was studied. The additional power penalty due to the laser turn-on delay was simulated and is discussed     

Extremely low threshold (0.56 mA) operation in 1.3 μmInGaAsP/InP compressive-strained-MQW lasers

A record low threshold current of 0.56 mA, as a long-wavelength laser, has been obtained in a 1.3 μm InGaAsP/InP strained-MQW laser, at room temperature (25°C), by optimising an active layer and by employing a short cavity with high-reflection coatings     

Low threshold operation of 1.55 μm GaInAsP/InP DFB-BH LDsentirely grown by MOVPE on InP gratings

1.55 μm GaInAsP/InP DFB-BH LDs on corrugated InP substrates were fabricated by only two-stage MOVPE including burying layer growth. The 9 mA minimum threshold current was achieved with both facets cleaved, which the authors believe is the lowest among MOVPE grown DFB LDs with InP grating. Up to 20 mW maximum output power and 0.21 W/A differential quantum efficiency were also attained under single longitudinal mode operation     

InGaAsP/InP double heterostructure lasers grown by atmospheric-pressure MOCVD

Room-temperature operation of InGaAsP-InP double-heterostructure lasers grown by atmospheric pressure metalorganic chemical vapour deposition is reported. Optically pumped laser operation at 1.36 ?m and 1.45 ?m has been achieved and broad-area injection lasers operating at 1.37 ?m with threshold current densities as low as 3.6 kA/cm2 have been demonstrated.     

1.3 μm InGaAs/GaAs strained quantum well lasers with InGaPcladding layer

Using MOVPE, we fabricated strained quantum well 1.3 μm lasers with an InGaP cladding layer on a GaAs substrate. The lasers had a high gain coefficient of 60 cm^-1. Lasers with high reflection facets had a low threshold current density of 500 A/cm², and a high characteristic temperature of 100 K     

Very low threshold operation of 1.52 μm GaInAsP/InP DFB buriedridge structure laser diodes entirely grown by MOCVD

1.52 μm GaInAsP/InP DFB laser diodes with a buried ridge structure were fabricated entirely by MOCVD, with a second-order corrugation on the GaInAsP guiding layer. The 5 mA minimum threshold current achieved is believed to be the lowest yet reported for DFB lasers. Single longitudinal-mode operation with a side-mode suppression ratio greater than 35 dB was obtained from 20°C (up to 16 mW) to 90°C (up to 3 mW)     

Low threshold room temperature pulsed and -57°C CW operationsof 1.3 μm GaInAsP/InP circular planar buried heterostructuresurface-emitting lasers

Room temperature pulsed lasing operation of a 1.3-μm GaInAsP/InP vertical-cavity surface-emitting laser has been achieved by using an effective carrier confinement of circular planar buried heterostructure (CPBH) and high reflectivity SiO₂/Si dielectric multilayer mirrors. The threshold current for a device having a nearly 12-μm-diameter active region was 34 mA at 24°C under pulsed operation. The optimized window cap structure reduces the series resistance to 6~15 Ω. Continuous wave lasing was also obtained up to -57°C, and the threshold below -61°C was still lower than 22 mA     

Comparative study of low-threshold 1.3 μm strained andlattice-matched quantum-well lasers

A study of the effects of biaxial strain on the performance of low-threshold 1.3-μm In_xGa_1-xAs_yP _1-y/InP quantum-well lasers is presented. Lasers with lattice-matched, compressive-strained, and tensile-strained quantum-wells were fabricated to compare the effect of strain on various device parameters. Threshold current densities as low as 187 A/cm² for a two-quantum-well device with 0.85% compressive strain were obtained     

Strained 1.3 μm MQW AlGaInAs lasers grown by digital alloy MBE

AlGaInAs strained MQW lasers, emitting at 1.3 μm, have been prepared for the first time using a digital alloy approach. 2 μm stripe geometry lasers have characteristics comparable to those of lasers prepared using bulk alloy layers. The infinite length threshold current densities are as low as 140 kA/cm²/quantum well and T ₀ values (20-40°C) range from 75-90 K for chip lengths of 375-2375 μm     

Low-threshold 1.3 ?m GaInAsP/InP lasers grown by atmospheric-pressure MOVPE

Room-temperature pulsed operation has been achieved at and below 1.3 ?m for GaInAsP/InP lasers grown by atmospheric-pressure metalorganic vapour phase epitaxy. Thresholds as low as 1.0 kA/cm2 (for a cavity length of 1000 ?m) have been obtained.     

Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure MOVPE

Room temperature pulsed operation has been achieved in the 1.2?1.3 ?m region for GaInAsP/InP lasers grown by low pressure metalorganic vapour phase epitaxy. Thresholds as low as 1.2 kA/cm2 and threshold temperature dependences of exp T/T0, with T0 up to 80 K, have been obtained.     

Molecular-beam epitaxially grown 1.3 ?m GaInAsP/InP double-heterostructure lasers

We report the first successful preparation of current-injection GaInAsP/InP double-heterostructure laser lasing at 1.3 ?m by molecular beam epitaxy. For broad-area Fabry-Perot diodes of 380 ?m×200 ?m and an active layer thickness of 0.2 ?m, we have observed threshold current densities Jth as low as 1.8 kA/cm2 and a median Jth?3.5 kA/cm2.     

1.3 /spl mu/m InGaAsN vertical cavity surface emitting lasers grown by MOCVD

The first InGaAsN VCSELs grown by MOCVD with CW lasing wavelength longer than 1.3 /spl mu/m are reported. The devices were of conventional p-i-n structure with doped DBR mirrors. CW lasing up to 65/spl deg/C was observed, with a maximum output power at room temperature of 0.8 mW for multimode devices and nearly 0.3 mW for single-mode devices.     

Reduced turn-on delay time in 1.3 μm InGaAsP/lnP n-typemodulation-doped strained multiquantum well lasers

Reductions in carrier lifetime, threshold current, and thus turn-on delay time, due to n-type modulation doping, have been experimentally demonstrated in 1.3 μm InGaAsP strained multiquantum well lasers for the first time     

Wideband and high-power compressively strained GaInAsP/InPmultiple-quantum-well ridge waveguide lasers emitting at 1.3 μm

Compressively strained 1.3-μm GaInAsP/InP multiple-quantum-well (MQW) ridge waveguide lasers were fabricated. Through optimizing the total well thickness, large bandwidth over 11 GHz was achieved, together with high quantum efficiency of about 0.48 W/A and high power output of 60 mW before rollover. The laser also showed less temperature sensitivity up to an elevated temperature of 85°C     

GaN的低压MOCVD生长模型

用停滞边界层理论分析了低压 MOCVD外延 Ga N的生长模型。通过优化反应室结构和工艺条件 ,成功生长了厚度均匀、晶体质量优良的 Ga N外延层     

InAs0.97N0.03/InGaAs/InP multiple quantumwell lasers with emission wavelength λ=2.38 μm

Application of a novel InAsN alloy on a laser device is reported for the first time. The four-period InAs_0.97N_0.03-In_0.53Ga_0.47 As-InP strained multiple quantum well laser, grown by gas source molecular beam epitaxy with an RF-coupled plasma nitrogen source, lased under pulsed operation at 2.38 μm at 260 K. A threshold current density of 3.6 KA/cm² at 260 K and a characteristic temperature of 62 K have been achieved     

MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55 μmVCSELs

A new MOCVD InP/AlGaInAs distributed Bragg reflector for long-wavelength VCSELs is presented. The InP/AlGaInAs system presents a high potential for 1.55 μm VCSELs owing to the combination of its high refractive index contrast (Δn≃0.34) and its low conduction band discontinuity (ΔEc≃150 meV). InP/AlGaInAs mirrors and one half VCSEL (bottom mirror and λ cavity) have been fabricated for the first time using AlGaInAs transparent to 1.55 μm