光谱失配对太阳电池短路电流测量准确性影响分析

讨论了基于太阳模拟器和标准太阳电池校准被测太阳电池的方法中,光谱失配对其结果准确性的影响。分析了2块标准太阳电池在2台不同太阳模拟器下的短路电流测试结果,根据待测电池、标准电池的相对光谱响应度以及太阳模拟器光谱和标准光谱辐照度,计算其光谱失配因子,并对比了光谱失配修正前后所得测试结果的偏差。计算方法和实验数据,为太阳电池的校准和测试提供了相关依据。     

不同类型太阳电池光电参数的测量方法

作为太阳电池计量项目．通常从以下两方面进行测试：标准太阳电池在标准太阳光谱条件下的光谱响应度和在太阳模拟器下太阳电池安（I）-伏（V）特性的测量．进而计算出标准太阳光谱条件下太阳电池的标定值。太阳电池的光谱响应特性直接影响着组件能量转换效率．因此．光谱响应度测量对于研究开发太阳电池的响应特性具有重要意义．同时也为多结电池设计提供了参考。     

太阳能电池I-V特性检测技术研究

介绍了一款嵌入式手持触屏型太阳能电池I-V特性测试仪的设计。该测试仪选用ARM920体系芯片S3C2440,具有高性能、低功耗、高集成度的优点。选择合适的太阳模拟光源,可用于太阳电池单体和组件的I-V特性测试,获得太阳电池开路电压、短路电流、输出功率和电池效率等特征参数。     

量子点在低价太阳电池中的应用及研究状况

太阳电池的发展包括3个阶段,已商业化生产的第一代单晶硅电池成本较高,而薄膜化的第二代太阳电池虽大幅降低了成本,但效率不理想。因此,期待比第一代太阳电池有更高转换效率的同时,保持第二代太阳电池低成本优势的第三代太阳电池的诞生。其中,半导体量子点太阳电池因具有高达66%的热力学转换效率备受关注。介绍了基于量子点的几种低价太阳电池,包括全无机纳米结构太阳电池、染料敏化电池及聚合物太阳电池等,重点介绍了由有机聚合物和无机半导体量子点组成的杂化聚合物/量子点电池的结构及影响器件效率的关键因素。     

太阳电池缺陷EL检测及电性能分析

基于电致发光（EL）的理论,利用红外检测的方法,通过CCD近红外相机实验检测出晶体硅太阳电池中存在的隐性缺陷,如隐裂、断栅、电阻不均匀、花片等,并将EL图像与可见光下电池图像进行了对比。对存在缺陷的太阳电池进行了伏安特性测试,得出隐裂缺陷对太阳电池伏安特性、填充因子、效率等性能的影响,也证明电致发光技术检测太阳电池缺陷的准确性。     

标准太阳电池标定值计量方法研究

基于差分光谱响应度法搭建了标准太阳电池标定值校准装置,分析了标准太阳电池绝对光谱响应度随电池温度和偏置光辐照度的变化关系,通过数值拟合得到太阳电池短路电流与偏置电流的关系,实现太阳电池标定值测量不确定度1.2%(k=2)。搭建了标准太阳电池标定值户外计量装置,实现测量不确定度2.38%(k=2)。差分光谱响应度法与户外总辐射法测量结果比对的比率值为0.95,表明2种方法测量结果在不确定范围内量值等效。     

柔性太阳电池发展研究

柔性太阳电池可应用在卫星、飞艇、无人机、单兵装备、光伏建筑一体化以及可穿戴智能设备上,极具发展前景。本文介绍了柔性硅薄膜太阳电池、柔性碲化镉太阳电池、柔性铜铟镓硒太阳电池和柔性钙钛矿太阳电池的电池结构、制备方法和发展现状,分析了柔性太阳电池效率提升以及产业化过程中存在的问题,并从柔性衬底选择、电池效率提升、产业化装备制造等几个方面,对柔性太阳电池下一步发展提出了建议。     

CuInS2量子点的合成及在太阳电池中的应用研究

介绍了CuInS2量子点的合成方法及在几种结构的太阳电池(如全无机纳米结构太阳电池、染料敏化电池及聚合物太阳电池)中的应用,尤其是针对聚合物太阳电池,分析了器件效率低的原因并提出了提高该类太阳电池效率的方法。     

新颖的第三代太阳能电池

为了开发清洁新能源,太阳能电池成为人们研究的热点.简要介绍了第三代太阳电池的发展现状,阐述了叠层电池、中间带太阳电池、热载流子太阳电池等第三代太阳能电池的设计原理,分析了各种新概念太阳能电池在发展中存在的问题和未来发展的方向.     

钙钛矿太阳电池的理论性能研究进展

钙钛矿太阳电池近年来发展迅速,其电池最高转换效率已突破22%,有望成为改变现有光伏产业格局的重要新型太阳电池。理论分析钙钛矿太阳电池内部机理是进一步提高电池性能的重要基础。主要介绍了现阶段研究者对钙钛矿太阳电池的不同结构、不同功能层之间的电学参数、最优尺寸等方面的最新理论研究进展。同时针对电池的稳定性,介绍了目前各研究者对新型空穴传输层材料的探索。还对钙钛矿吸光层的电学性质做了理论分析,为进一步提高电池的性能提供了参考。     

晶体硅太阳电池最大功率下负载的函数表达

从实际的晶体硅太阳电池电路基本方程出发，推导出晶体硅太阳电池最大功率下负载的函数表达。与传统的电工电路不同，太阳电池电路最大功率点下的负载大于太阳电池内阻，并随着温度的升高，其比值逐渐降低。实验结果与理论吻合。     

等离子体增强化学气相沉积设备的研制

本文介绍非晶硅薄膜太阳能电池生产线的核心设备——等离子体增强化学气相沉积(PECVD, Plasma Enhanced Chemical Vapor Deposition)系统,并阐述了其重要地位.非晶硅太阳能电池制造的关键技术是非晶硅薄膜的制备,目前最常见的制备方法是PECVD技术.PECVD技术凭借其低温沉积、可大面积成膜、成膜均匀等特点,在非晶硅薄膜制备方面迅速发展.PECVD系统用于制备非晶硅太阳能电池的关键结构P、I、N硅薄膜层.本文阐述了该设备的结构特点、技术指标、工作原理及工艺过程,对沉积室的结构和配置进行了详细设计计算,非晶硅太阳能电池稳定后的转化效率可达6％.     

The materials characteristic and the efficiency degradation of solar cells from solar grade silicon from a metallurgical process route

The rising conventional energy prices have opened up the market for photovoltaic, but the lack of polycrystalline silicon from the chemical route restricts the growth of crystalline silicon solar cells. Recently there is a trend that produces solar cells by using the newly developed solar grade silicon feedstock from a metallurgical process route. In this article, the chemical components of solar grade silicon feedstock are analyzed. The single crystalline silicon solar cells from 100% solar grade silicon feedstock from a metallurgical process route are investigated. The outdoor performance of solar modules encapsulated by such cells is reported. The experimental evidence suggests that such solar cells can achieve the average efficiency higher than 14% on single crystalline silicon wafers. However, the efficiency degradation of solar cells under natural sunlight is significant, and the electrical uniformity of small cells diced from the whole cell is too bad. The metal impurities, oxygen, carbon, and their complexes influence the performance stabilization. The article proves that the module made by such cells has a big cell mismatch loss than normal cells made by electronic grade silicon, even if these cells come from the same sort. And the operating temperature of the cells of the modules is 15–22 °C higher than normal modules under the same conditions. The solar grade silicon feedstock from a metallurgical process route has to be improved farther in order to be used in photovoltaic industry.     

Multicrystalline Silicon for Solar Cells: Process Development by Numerical Simulation

Continuously improving crystallization conditions and solar cell processes have lead to steadily increasing efficiencies of solar cells based on multicrystalline silicon. There is, however, still an efficiency gap between mono‐ and multicrystalline silicon amounting to 1–2 % (absolute) depending on the cell process used. Topographies of the local solar cell performance clearly reveal that the main contribution to this efficiency gap is due to recombination‐active dislocations present in multicrystalline silicon. A further improvement of the efficiencies attainable with multicrystalline solar cells therefore is achievable by a reduction of the dislocation density. Dislocations originate from thermal stress that originates from temperature gradients inside a multicrystalline ingot during crystallization and cooling. In order to reduce this thermal stress and consequently the dislocation density we employ a numerical simulation routine, the so‐called virtual crystallization furnace, for perfect control of the temperature distribution during the entire ingot fabrication process.     

Advanced APCVD-processes for high-temperature grown crystalline silicon thin film solar cells

Crystalline silicon thin film (cSiTF) solar cells based on the epitaxial wafer-equivalent (EpiWE) concept combine advantages of wafer-based and thin film silicon solar cells. In this paper two processes beyond the standard process sequence for cSiTF cell fabrication are described. The first provides an alternative to wet chemical saw damage removal by chemical vapor etching (CVE) with hydrogen chloride in-situ prior to epitaxial deposition. This application decreases the number of process and handling steps. Solar cells fabricated with different etching processes achieved efficiencies up to 14.7%. 1300 degrees C etching temperature led to better cell results than 1200 degrees C. The second investigated process aims for an improvement of cell efficiency by implementation of a reflecting interlayer between substrate and active solar cell. Some characteristics of epitaxial lateral overgrowth (ELO) of a patterned silicon dioxide film in a lab-type reactor constructed at Fraunhofer ISE are described and first solar cell results are presented.     

醋酸铜辅助催化刻蚀制备金刚线切割多晶硅片绒面

金刚线切割多晶硅片表面减反射结构难以制备的问题阻碍着多晶硅光伏的进步。银辅助的酸腐蚀是解决这一问题的较好方法,但银的消耗和废液处理等增加了成本。本研究提出了醋酸铜辅助催化刻蚀金刚线切割多晶硅片方案,考察了刻蚀反应温度和时间对硅片表面形貌的影响,确定了最优的反应温度和时间分别为25℃和5 min。在此条件下,所获得的多晶硅在300～1100 nm波段的平均反射率为15.1%。按照标准太阳电池制备工艺流片后,所获太阳电池的光电转换效率为19.4%。     

Effect of nanoporous silicon coating on silicon solar cell performance

The surface modification of silicon solar cells was used for improvement of photovoltaic characteristics of silicon solar cells. A screen-printed solar cell technology is used to fabricate n⁺-p silicon solar cell. Nanoporous silicon (PS) layer on n⁺-type Si wafers or on the frontal surface of (n⁺-p)Si solar cell was formed by electrochemical etching in HF-containing solution. The surface morphology, porosity, spectra of photoluminescence and reflectance of PS layers were analyzed. The photovoltaic characteristics of two silicon solar cell type with and without PS layer (PS/(n⁺-p)Si and (n⁺-p)Si cell) were measured and compared. The spectra of photosensitivity of cells were measured in the wavelength range of 300-1100 nm. An average reflection of the porous silicon layer, fabricated on a polished silicon surface, is decreased to 4%. A remarkable increment of the conversion efficiency by 20% have been achieved for PS/(n⁺-p)Si solar cell comparing to (n⁺-p)Si solar cell without PS layer. The results, related with improving of the performance of PS/(n⁺-p)Si solar cell, have been attributed to the effective antireflection and the wide-gap window role of nanoporous silicon on the silicon solar cell.     

硅半导体太阳能电池进展

太阳能电池是将太阳能直接转化为电能的装置,也是有效利用太阳能最佳途径之一。作为一种绿色能源,尤其是在核电安全问题面临挑战的今天,太阳能电池被认为是解决能源衰竭和环境污染等一系列重大问题的最佳选择。目前,许多国家正在制订中长期太阳能开发计划,准备在21世纪大规模开发太阳能。当前研究最多同时在生产应用的最广泛的当数硅太阳能电池(如单晶硅、多晶硅、非晶硅等)。通过对各类硅太阳能电池的性能、工艺、转化效率以及制备方法等方面作比较并讨论了它们各自性能的优劣,最后结合当前国内外工业化生产状况,对硅太阳能电池研究现状和各自的最新进展作了比较详细的综述,并简要讨论了硅太阳能电池研究和生产上的前景及趋势。     

晶体硅薄膜电池制备技术及研究现状

晶体硅薄膜太阳电池近些年来得到广泛的研究和初步的商业化探索。根据所采用的晶体硅薄膜沉积工艺中温度范围的不同，晶体硅薄膜电池研究可分为高温路线和低温路线两个不同发展方向。本文分别从这两个方向综述了目前国外晶体硅薄膜电池制备技术的最新进展，最新实验室研究结果。报导了晶体硅薄膜电池商业化进展状况，指出了晶体硅薄膜电池实现产业化必须解决的问题。     

硅表面钝化及对异质结太阳电池特性的影响

研究了不同的晶体硅表面钝化方法,测试分析了硅片的少数载流子寿命以及对晶体硅/非晶硅异质结(HIT)太阳电池性能的影响。发现适当时间的HF溶液处理、氢等离子体处理和表面覆盖约3nm的本征非晶硅层能有效提高硅片的少子寿命,从而提高HIT太阳电池的开路电压。对电池制备工艺综合优化后,得到了基于n型晶体硅的光电转换效率为16.75%(Voc=0.596V,Jsc=41.605mA/cm2,FF=0.676,AM1.5,25℃)的HIT太阳电池。