阳离子部分取代Cu2ZnSnS4的研究进展

P型半导体Cu_2ZnSnS_4(CZTS)由于具有最佳的直接带隙(1.0~1.5eV)、高的光吸收系数(超过104 cm~(-1))以及丰富、无毒的元素组成,使其成为商业化低成本太阳能电池最有希望的候选材料之一。然而,材料本身的一些缺陷制约了CZTS薄膜太阳能电池效率的提高。为了提高CZTS薄膜太阳能电池的效率,研究者们使用其他阳离子部分取代Cu、Zn或Sn来改善CZTS的缺陷。从CZTS的3种不同取代位置出发,综述了近年来各种阳离子部分取代CZTS的研究进展,同时对阳离子部分取代CZTS材料的发展前景进行了展望。     

电沉积法制备铜锌锡硫薄膜太阳能电池吸收层的研究进展

直接禁带半导体材料铜锌锡硫(CZTS)四元硫化物是近年来研究较多的具有锌黄锡矿结构的化合物半导体,由于其光吸收系数较高,禁带宽度适中,是太阳能电池理想的候选材料,使其在薄膜太阳能电池中迅速崛起。由于目前报道的最高转换效率距离其理论转换效率还存在相当差距,因此,研究CZTS(Se)四元硫(硒)化物半导体仍然是当前的研究热点之一。简单介绍了CZTS薄膜太阳能电池的结构组成,并详细介绍了3种主要制备CZTS薄膜的电沉积方法,即分步沉积Cu/Sn/Zn金属层、连续沉积Cu-Zn-Sn金属层、一步沉积Cu-Zn-Sn-S(Se)制备CZTS薄膜太阳能电池吸收层的电化学技术及相应器件,对其研究进展进行了综述,指出了相应方法存在的问题。还将3种电沉积方法进行了分析比较,提出了优化方法,展望了未来的发展趋势。     

溶胶-凝胶法制备铜锌锡硫材料的研究进展

四元硫化物铜锌锡硫(CZTS)是一种新型薄膜太阳电池材料,具有锌黄锡矿结构,呈p型导电性,带隙约为1.5eV,光学吸收系数高于10~4cm~(-1),这些特性与太阳光谱相匹配。基于上述原因,CZTS薄膜是一种有望能低成本、可规模化开发利用的新型薄膜太阳电池材料。简要阐述了CZTS性质及其薄膜太阳能电池的器件结构,详细介绍了溶胶-凝胶方法制备CZTS薄膜及其相应器件效率的研究进展。最后,总结了此方法制备CZTS薄膜及其相关电池性能难以突破的关键技术问题,并提出了有效的改进措施,对CZTS薄膜太阳电池未来的研究进行了展望。     

Cu_2ZnSnS_4薄膜的研究进展

Cu2ZnSnS4(CZTS)薄膜太阳能电池具有低成本、高效率、安全无毒等优点,是最具发展前景的太阳能电池之一,近几年来开始受到广泛关注。简要介绍了国内外几种制备Cu2ZnSnS4薄膜的方法,包括蒸发法、溅射法、脉冲激光沉积法、电化学沉积法、喷涂热解法、Sol-gel法、丝网印刷法,并阐述了这几种方法的优点及存在的问题,展望了今后CZTS薄膜的研究方向,认为通过溶剂热或热注入法制备出CZTS纳米晶体后,再通过丝网印刷法或旋涂等法制成CZTS薄膜能降低生产成本,在电池的工业化生产中具有很广阔的应用前景。     

新型铜硫系薄膜太阳能电池材料制备的研究进展

薄膜太阳能电池提供了低成本、大面积的无碳发电应用前景,迅猛发展的纳米科技为高转换效率薄膜太阳能电池的低成本制造提供了新途径。新型铜硫系半导体Cu_2ZnSnS_4(CZTS)薄膜材料具有禁带宽度与太阳辐射匹配性好、光吸收系数大、元素丰度大、价格便宜、无毒等优点,因此将成为最具发展前景的薄膜太阳能电池材料。讨论与分析了CZTS薄膜和纳米晶材料的制备及由这些材料制备绿色、低成本、高效率新型太阳能电池的研究进展。     

溶胶-凝胶法制备铜锌锡硫薄膜及其太阳能电池的研究进展

原料丰富价廉的铜锌锡硫(Cu2ZnSnS4,CZTS)材料与非真空、低成本绿色溶胶-凝胶法相结合在产业化制造高性价比CZTS薄膜太阳能电池方面的应用引人关注。为了了解未来发展方向,综述了溶胶-凝胶法制备CZTS薄膜与器件的研究进展,讨论了不同溶胶-凝胶工艺途径、不同溶剂、硫化等对CZTS薄膜制备与器件特性的影响,分析了Na掺杂及硫化退火对CZTS薄膜的作用,并结合绿色制造的要求探讨了其发展趋势。     

H2S气氛下硫化温度对Cu2ZnSnS4薄膜性能影响的研究

用磁控溅射法在玻璃衬底上沉积Zn/Sn/Cu预置层,然后再在H2S气氛下将其硫化制成Cu2ZnSnS4(CZTS)薄膜。研究了不同硫化温度(460,500,540和580℃)对CZTS薄膜性能的影响。采用X射线衍射、Raman、扫描电镜、能量色散谱和紫外-可见-近红外分光光度计表征薄膜的物相、表面形貌和光学性能。结果表明,在不同硫化温度下都成功制备了CZTS薄膜。当硫化温度为540℃时,制备的薄膜晶粒达到2μm,结晶性最好,表面致密光滑,而且它的吸收系数大于7×104cm-1,禁带宽度为1.49 e V。硫化温度较低(460℃)时,含有Cu2-xS杂质相,表面存在孔洞。而硫化温度较高(580℃)时,晶界处会产生微裂纹。     

硫化物靶与单质靶制备Cu2ZnSnS4薄膜的比较研究

为了验证磁控溅射硫化物靶替代单质靶制备Cu₂ZnSnS₄(CZTS)薄膜及太阳电池的可行性与优越性, 采用多周期磁控溅射ZnS-Sn-CuS和Zn-Sn-Cu制备CZTS薄膜, 并分析了使用不同溅射靶材对薄膜晶体结构、相纯度、表面粗糙度、化学组分、表面、截面形貌及光电特性的影响。按SLG/Mo/CZTS/CdS/i-ZnO/ZnO:Al/Ni-Al结构制成完整的电池器件并测量了J-V曲线。结果显示采用ZnS-Sn-CuS靶制备的CZTS薄膜太阳电池开路电压为611 mV, 短路电流密度为21.28 mA/cm ², 光电转换效率达5.11%; 而以单质靶为基础制备的太阳电池开路电压为594 mV, 短路电流密度为18.56 mA/cm ², 光电转换效率为4.13%。这归因于采用ZnS-Sn-CuS制备的CZTS薄膜相比于单质靶更加平整致密, 纵向生长更好。证明了采用硫化物靶制备CZTS薄膜及太阳电池相较于单质靶的优越性。     

Cu2ZnSnS4薄膜光电性能及其太阳电池的制备和研究

采用硫化Zn/Sn/Cu金属多层膜的方法制备了太阳电池吸收层用的Cu2ZnSnS4(CZTS)薄膜。用X射线衍射仪、拉曼光谱仪、紫外-可见近红外分光光度计、扫描电镜、能谱仪及数字源表等对薄膜进行了一系列的表征。结果表明制备的CZTS薄膜没有杂相存在并具有标准拉曼峰。薄膜在可见光范围内的吸收系数>104cm-1,同时其光学带隙接近1.5eV。CZTS薄膜具有均匀致密的表面形貌,薄膜元素比例非常接近标准化学计量比。此外,CZTS薄膜呈现显著的光电流响应性能,其光电流的激发和衰减时间分别为0.0736和0.2646s。     

太阳能电池用ZnO-TCO薄膜研究进展

介绍了ZnO透明导电薄膜的基本特性,制备技术,其中磁控溅射技术和MOCVD技术是制备太阳能电池用ZnO透明导电薄膜的主流生长技术,论述了这两种制备技术的原理、技术特点、制备绒面ZnO薄膜的研究进展,并对ZnO透明导电薄膜的发展趋势做了展望.     

The properties of Ba0.5Sr0.5TiO3 thin film prepared by RF magnetron sputtering from powder target

The Ba_0.5Sr_0.5TiO₃ (BST) thin film with the thickness of 400 nm deposited from powder target is prepared by the radio-frequency magnetron sputtering technique. The deposition rate of BST film is estimated to be 45 nm/min, which is very fast for ferroelectric materials. The dielectric properties of the as-prepared BST thin film are demonstrated. High dielectric tunability up to 42.7% and low dielectric loss small to 0.01 are achieved at a low applied voltage of 5 V. The results demonstrate that the RF magnetron sputtering from powder target is a versatile, novel technique for the deposition of high-quality ferroelectric thin films.     

Development of CZTS-based thin film solar cells

The low cost, environmental harmless Cu₂ZnSnS₄ (CZTS)-based thin film solar cells are fabricated by using abundant materials. The CZTS film possesses promising characteristic optical properties; band-gap energy of about 1.5 eV and large absorption coefficient in the order of 10⁴ cm^− 1. All constituents of this CZTS film, which are abundant in the crust of the earth, are non-toxic. Therefore, if we can use CZTS film practically as the absorber of solar cells, we will be free from both of the resource saving problem and the environmental pollution.In our CZTS project, CZTS absorber films were prepared by two independent techniques. One is three rf sources co-sputtering followed by annealing in sulfurized atmosphere. The latest conversion efficiency of over 6.7% was achieved by this technique. The other is co-evaporation technique. CZTS films were grown on Si (100) by vacuum co-evaporation using elemental Cu, Sn, S and binary ZnS as sources. XRD patterns indicated that the polycrystalline growth was suppressed and the orientational growth was relatively induced in a film grown at higher temperatures.In this presentation, the development of CZTS-based thin film solar cells will be surveyed.     

Growth of CZTS thin films by sulfurization of sputtered single-layered Cu–Zn–Sn metallic precursors from an alloy target

Cu₂ZnSnS₄ (CZTS) thin films were prepared by sulfurizing single-layered metallic Cu–Zn–Sn precursors which were deposited by DC magnetron sputtering using a Cu–Zn–Sn ternary alloy target. The composition, microstructure and properties of the CZTS thin films prepared under different sputtering pressure and DC power were investigated. The results showed that the sputtering rate of Cu atom increases as the sputtering pressure and DC power increased. The microstructure of CZTS thin films can be optimized by sputtering pressure and DC power. The CZTS thin film prepared under 1 Pa and 30 W showed a pure Kesterite phase and a dense micro-structure. The direct optical band gap of this CZTS thin film was calculated as 1.49 eV with a high optical absorption coefficient over 10⁴ cm^?1. The Hall measurement showed the film is a p-type semiconductor with a resistivity of 1.06 Ω cm, a carrier concentration of 7.904 × 10¹⁷ cm^?3 and a mobility of 7.47 cm² Vs^?1.     

Progress of (Sr,Ba) TiO<Subscript>3</Subscript> ferroelectric thin film and tunability

The fabrication method, technology route and structure performances of (Sr, Ba) TiO₃ (SBT) ferroelectric thin film have been summarized in this paper. The tunability of dielectric constant, dielectric loss and leakage current are the basic parameters of tunable microwave devices. The thin films of SBT with high properties could be fabricated by means of RF magnetron sputtering and sol- gel processing. The electrical performances of thin film material can be improved largely by dopants. Some problems are put forward to pay attention to this material research process.     

WO3薄膜的磁控溅射法制备及电致变色性能

采用直流反应磁控溅射制备了具有优异电致变色性能的WO3薄膜。通过对成膜参数的调控,实现了低功率和短溅射时间的制膜制度,获得了较宽的工艺范围。通过X射线衍射仪、场发射扫描电子显微镜、光学轮廓仪、电化学工作站、紫外-可见-红外分光光度计研究了薄膜的物相、微观结构、厚度、电致变色性能。研究表明:在溅射功率为50 W,溅射压强为2.0 Pa,反应气体流量为20 sccm时所制得的薄膜性能最为优越。所制备薄膜具有较短的变色响应时间和大幅度的变色调制幅度,其对可见光变色调制幅度达到80%。     

Growth and Raman scattering characterization of Cu2ZnSnS4 thin films

In the present work we report the results of the growth, morphological and structural characterization of Cu₂ZnSnS₄ (CZTS) thin films prepared by sulfurization of DC magnetron sputtered Cu/Zn/Sn precursor layers. The adjustment of the thicknesses and the properties of the precursors were used to control the final composition of the films. Its properties were studied by SEM/EDS, XRD and Raman scattering. The influence of the sulfurization temperature on the morphology, composition and structure of the films has been studied. With the presented method we have been able to prepare CZTS thin films with the kesterite structure.     

Morphology and structure of La1.85Sr0.15CuO4 + δ thin films deposited on (100) SrTiO3 substrates by dc magnetron sputtering

La_1.85Sr_0.15CuO_4 + δ thin films were deposited by dc magnetron sputtering. Relaxing time intervals were introduced in the deposition process for improving the quality of the thin films. Atomic force microscopy and X-ray diffraction were used to examine the morphology and structure of the thin films. The study reveals that the time intervals inserted in the deposition process improve the morphology of the thin films, and shows that the thicker the film, the better the crystalline quality and the superconducting property for both deposition processes.     

Microstructure and electrochemical properties of magnetron-sputtered LiCoO2/LiNiO2 multi-layer thin film electrode

LiCoO₂ single-layer and LiCoO₂/LiNiO₂ multi-layer thin film electrodes were successfully fabricated by magnetron sputtering. Their microstructure and electrochemical properties were investigated. Once annealed, both films had the (0 0 3) preferred orientation to minimize the surface energy. The initial discharge capacity of the multi-layer thin film was approximately 53.1 μAh/cm² μm, which was higher than that of the LiCoO₂ single-layer thin film having similar thickness. The capacity retention of the multi-layer thin film was superior to that of the single-layer thin film. These findings indicate that the multi-layer thin film is a promising cathode material for the fabrication of high-performance thin film batteries.