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CIGS薄膜太阳能电池的缓冲层为低带隙CIGS吸收层与高带隙ZnO窗口层之间形成过渡,减少两者带隙的晶格失配和带隙失调,并可防止溅射ZnO窗口层时给CIGS吸收层带来损害等,对提高CIGS薄膜太阳能电池效率起了重要作用.介绍了CIGS薄膜太阳能电池缓冲层材料的分类和制备工艺,主要阐述了CdS、ZnS及In2S3薄膜缓冲层材料及化学水浴法、原子层化学气相沉积法、金属化合物化学气相沉积法等制备工艺的研究现状,最后指出CIGS太阳能电池缓冲层在制备工艺、环境保护及大规模工业化生产中遇到的问题,并展望了其发展方向. 相似文献
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《真空》2017,(6)
随着机械、光学、微电子和纳米科技等领域的发展,在柔性基体上如聚酯(PET)、聚乳酸酯(PLA)、聚酰亚胺(PI)等聚合物表面沉积Al_2O_3薄膜作为阻挡层、介电层、钝化层的研究也越来越多。无机Al_2O_3薄膜因其机械强度与硬度高、光学性能优良、透明性高与绝缘性好、耐磨、抗蚀及化学惰性等特点引起人们的极大兴趣。较传统薄膜制备技术,原子层沉积(ALD)技术制备的薄膜具有精确的厚度和成分可控性、高度均匀性和保形性,成为制备Al_2O_3薄膜的主要方式之一。本综述首先概述了原子层沉积原理,其次阐述了柔性沉积基体的特点,介绍了Al_2O_3薄膜的生长过程和影响因素,比较了在柔性基体上热原子层沉积和等离子体辅助原子层沉积Al_2O_3薄膜的优缺点,最后总结和展望了ALD制备Al_2O_3薄膜的研究趋势和应用前景。 相似文献
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本文介绍非晶硅薄膜太阳能电池生产线的核心设备——等离子体增强化学气相沉积(PECVD, Plasma Enhanced Chemical Vapor Deposition)系统,并阐述了其重要地位.非晶硅太阳能电池制造的关键技术是非晶硅薄膜的制备,目前最常见的制备方法是PECVD技术.PECVD技术凭借其低温沉积、可大面积成膜、成膜均匀等特点,在非晶硅薄膜制备方面迅速发展.PECVD系统用于制备非晶硅太阳能电池的关键结构P、I、N硅薄膜层.本文阐述了该设备的结构特点、技术指标、工作原理及工艺过程,对沉积室的结构和配置进行了详细设计计算,非晶硅太阳能电池稳定后的转化效率可达6%. 相似文献
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Cu2ZnSnS4(CZTS)薄膜太阳能电池具有低成本、高效率、安全无毒等优点,是最具发展前景的太阳能电池之一,近几年来开始受到广泛关注。简要介绍了国内外几种制备Cu2ZnSnS4薄膜的方法,包括蒸发法、溅射法、脉冲激光沉积法、电化学沉积法、喷涂热解法、Sol-gel法、丝网印刷法,并阐述了这几种方法的优点及存在的问题,展望了今后CZTS薄膜的研究方向,认为通过溶剂热或热注入法制备出CZTS纳米晶体后,再通过丝网印刷法或旋涂等法制成CZTS薄膜能降低生产成本,在电池的工业化生产中具有很广阔的应用前景。 相似文献
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Shui-Yang Lien Chao-Chun Wang Yu-Chih Ou Ko-Wei Weng Chia-Fu Chen 《Thin solid films》2010,518(24):7233-7235
High-frequency plasma-enhanced chemical vapor deposition (HF-PECVD) is a widely applicable method of deposition over a large area at a high rate for fabricating silicon thin-film solar cells. This investigation presents the properties of hydrogenated amorphous silicon (a-Si:H) films and the preparation of highly-efficient p-i-n solar cells using an RF (27.1 MHz) excitation frequency. The influence of the power (10-40 W) and pressure (20-50 Pa) used during the deposition of absorber layers in p-i-n solar cells on the properties and mechanism of growth of the a-Si:H thin films and the solar cells is studied. The a-Si:H thin films prepared under various deposition conditions have widely varying deposition rates, optical-electronic properties and microstructures. When the deposition parameters were optimized, amorphous silicon-based thin-film silicon solar cells with efficiency of 7.6% were fabricated by HF-PECVD. These results are very encouraging for the future fabrication of highly-efficient thin-film solar cells by HF-PECVD. 相似文献
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It is undoubtable that the use of solar energy will continue to increase. Solar cells that convert solar energy directly to electricity are one of the most convenient and important photoelectric conversion devices. Though silicon-based solar cells and thin-film solar cells have been commercialized, developing low-cost and highly efficient solar cells to meet future needs is still a long-term challenge. Some emerging solar-cell types, such as dye-sensitized and perovskite, are approaching acceptable performance levels, but their costs remain too high. To obtain a higher performance–price ratio, it is necessary to find new low-cost counter materials to replace conventional precious metal electrodes (Pt, Au, and Ag) in these emerging solar cells. In recent years, the number of counter-electrode materials available, and their scope for further improvement, has expanded for dye-sensitized and perovskite solar cells. Generally regular patterns in the intrinsic features and structural design of counter materials for emerging solar cells, in particular from an electrochemical perspective and their effects on cost and efficiency, are explored. It is hoped that this recapitulative analysis will help to make clear what has been achieved and what still remains for the development of cost-effective counter-electrode materials in emerging solar cells. 相似文献
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Ke Gao Yuanyuan Kan Xuebin Chen Feng Liu Bin Kan Li Nian Xiangjian Wan Yongsheng Chen Xiaobin Peng Thomas P. Russell Yong Cao Alex K.-Y. Jen 《Advanced materials (Deerfield Beach, Fla.)》2020,32(32):1906129
With developments in materials, thin-film processing, fine-tuning of morphology, and optimization of device fabrication, the performance of organic solar cells (OSCs) has improved markedly in recent years. Designing low-bandgap materials has been a focus in order to maximize solar energy conversion. However, there are only a few successful low-bandgap donor materials developed with near-infrared (NIR) absorption that are well matched to the existing efficient acceptors. Porphyrin has shown great potential as a useful building block for constructing low-bandgap donor materials due to its large conjugated plane and strong absorption. Porphyrin-based donor materials have been shown to contribute to many record-high device efficiencies in small molecule, tandem, ternary, flexible, and OSC/perovskite hybrid solar cells. Specifically, non-fullerene small-molecule solar cells have recently shown a high power conversion efficiency of 12% using low-bandgap porphyrin. All these have validated the great potential of porphyrin derivatives as effective donor materials and made DPPEZnP-TRs a family of best low-bandgap donor materials in the OSC field so far. Here, recent progress in the rational design, morphology, dynamics, and multi-functional applications starting from 2015 will be highlighted to deepen understanding of the structure–property relationship. Finally, some future directions of porphyrin-based OSCs are presented. 相似文献
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The recently emerged integrated perovskite/bulk-heterojunction (BHJ) organic solar cells (IPOSCs) without any recombination layers have generated wide attention. This type of device structure can take the advantages of tandem cells using both perovskite solar and near-infrared (NIR) BHJ organic solar materials for wide-range sunlight absorption and the simple fabrication of single junction cells, as the low bandgap BHJ layer can provide additional light harvesting in the NIR region and the high open-circuit voltage can be maintained at the same time. This progress report highlights the recent developments in such IPOSCs and the possible challenges ahead. In addition, the recent development of perovskite solar cells and NIR organic solar cells is also covered to fully underline the importance and potential of IPOSCs. 相似文献
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Dasgupta NP Jung HJ Trejo O McDowell MT Hryciw A Brongersma M Sinclair R Prinz FB 《Nano letters》2011,11(3):934-940
Quantum dots provide unique advantages in the design of novel optoelectronic devices owing to the ability to tune their properties as a function of size. Here we demonstrate a new technique for fabrication of quantum dots during the nucleation stage of atomic layer deposition (ALD) of PbS. Islands with sub-10 nm diameters were observed during the initial ALD cycles by transmission electron microscopy, and in situ observations of the coalescence and sublimation behavior of these islands show the possibility of further modifying the size and density of dots by annealing. The ALD process can be used to cover high-aspect-ratio nanostructures, as demonstrated by the uniform coating of a Si nanowire array with a single layer of PbS quantum dots. Photoluminescence measurements on the quantum dot/nanowire composites show a blue shift when the number of ALD cycles is decreased, suggesting a route to fabricate unique three-dimensional nanostructured devices such as solar cells. 相似文献
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F. Finger O. Astakhov R. Carius A. Dasgupta A. Gordijn Y. Huang M. Luysberg L. Xiao 《Thin solid films》2009,517(12):3507-1003
Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (µc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the µc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%. 相似文献
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简要回顾了钙钛矿太阳能电池的发展历史,解释了钙钛矿太阳能电池本质上是固态染料敏化太阳能电池。介绍了钙钛矿太阳能电池的微观发电机理,结合钙钛矿太阳能电池的能级图分析讨论了钙钛矿与电子传输层和空穴传输层的能级匹配。分析总结了钙钛矿太阳能电池的光伏技术参数,包括光生电流密度、开路电压、填充因子、能量转换效率以及光伏性能的稳定性。钙钛矿太阳能电池的能量转换效率、短路电流密度和开路电压均已超过非晶硅薄膜太阳能电池,填充因子与非晶硅薄膜太阳能电池很接近。钙钛矿太阳能电池有希望实现产业化而成为下一代薄膜太阳能电池。指出了钙钛矿太阳能电池大规模市场应用在制造技术上的瓶颈即空穴传输层的造价昂贵,并综述了解决该瓶颈的最新研究工作。 相似文献
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硅半导体太阳能电池进展 总被引:1,自引:0,他引:1
太阳能电池是将太阳能直接转化为电能的装置,也是有效利用太阳能最佳途径之一。作为一种绿色能源,尤其是在核电安全问题面临挑战的今天,太阳能电池被认为是解决能源衰竭和环境污染等一系列重大问题的最佳选择。目前,许多国家正在制订中长期太阳能开发计划,准备在21世纪大规模开发太阳能。当前研究最多同时在生产应用的最广泛的当数硅太阳能电池(如单晶硅、多晶硅、非晶硅等)。通过对各类硅太阳能电池的性能、工艺、转化效率以及制备方法等方面作比较并讨论了它们各自性能的优劣,最后结合当前国内外工业化生产状况,对硅太阳能电池研究现状和各自的最新进展作了比较详细的综述,并简要讨论了硅太阳能电池研究和生产上的前景及趋势。 相似文献
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Flexible a‐Si:H Solar Cells with Spontaneously Formed Parabolic Nanostructures on a Hexagonal‐Pyramid Reflector 下载免费PDF全文
Wan Jae Dong Chul Jong Yoo Hyoung Won Cho Kyoung‐Bo Kim Moojin Kim Jong‐Lam Lee 《Small (Weinheim an der Bergstrasse, Germany)》2015,11(16):1947-1953
Flexible amorphous silicon (a‐Si:H) solar cells with high photoconversion efficiency (PCE) are demonstrated by embedding hexagonal pyramid nanostructures below a Ag/indium tin oxide (ITO) reflector. The nanostructures constructed by nanoimprint lithography using soft materials allow the top ITO electrode to spontaneously form parabolic nanostructures. Nanoimprint lithography using soft materials is simple, and is conducted at low temperature. The resulting structure has excellent durability under repeated bending, and thus, flexible nanostructures are successfully constructed on flexible a‐Si:H solar cells on plastic film. The nanoimprinted pyramid back reflector provides a high angular light scattering with haze reflectance >98% throughout the visible spectrum. The spontaneously formed parabolic nanostructure on the top surface of the a‐Si:H solar cells both reduces reflection and scatters incident light into the absorber layer, thereby elongating the optical path length. As a result, the nanopatterned a‐Si:H solar cells, fabricated on polyethersulfone (PES) film, exhibit excellent mechanical flexibility and PCE increased by 48% compared with devices on a flat substrate. 相似文献