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Lang Jiang Wenping Hu Zhongming Wei Wei Xu Hong Meng 《Advanced materials (Deerfield Beach, Fla.)》2009,21(36):3649-3653
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Liang Shan Danqing Liu Hao Li Xiaomin Xu Bowen Shan Jian‐Bin Xu Qian Miao 《Advanced materials (Deerfield Beach, Fla.)》2015,27(22):3418-3423
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Field‐Effect Transistors: A Cofacially Stacked Electron‐Deficient Small Molecule with a High Electron Mobility of over 10 cm2 V−1 s−1 in Air (Adv. Mater. 48/2015) 
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下载免费PDF全文 Jin‐Hu Dou Yu‐Qing Zheng Ze‐Fan Yao Ting Lei Xingxing Shen Xu‐Yi Luo Zhi‐Ao Yu Shi‐Ding Zhang Guangchao Han Zhi Wang Yuanping Yi Jie‐Yu Wang Jian Pei 《Advanced materials (Deerfield Beach, Fla.)》2015,27(48):8120-8120
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Particular attention has been focused on n‐channel organic thin‐film transistors (OTFTs) during the last few years, and the potentially cost‐effective circuitry‐based applications in flexible electronics, such as flexible radiofrequency identity tags, smart labels, and simple displays, will benefit from this fast development. This article reviews recent progress in performance and molecular design of n‐channel semiconductors in the past five years, and limitations and practicable solutions for n‐channel OTFTs are dealt with from the viewpoint of OTFT constitution and geometry, molecular design, and thin‐film growth conditions. Strategy methodology is especially highlighted with an aim to investigate basic issues in this field. 相似文献
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John E. Anthony Antonio Facchetti Martin Heeney Seth R. Marder Xiaowei Zhan 《Advanced materials (Deerfield Beach, Fla.)》2010,22(34):3876-3892
Organic semiconductors have been the subject of intensive academic and commercial interest over the past two decades, and successful commercial devices incorporating them are slowly beginning to enter the market. Much of the focus has been on the development of hole transporting, or p‐type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or so called n‐type, materials, and in this paper we focus upon recent developments in several classes of n‐type materials and the design guidelines used to develop them. 相似文献
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Uno M Nakayama K Soeda J Hirose Y Miwa K Uemura T Nakao A Takimiya K Takeya J 《Advanced materials (Deerfield Beach, Fla.)》2011,23(27):3047-3051
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Ajay A. Virkar Stefan Mannsfeld Zhenan Bao Natalie Stingelin 《Advanced materials (Deerfield Beach, Fla.)》2010,22(34):3857-3875
Analogous to conventional inorganic semiconductors, the performance of organic semiconductors is directly related to their molecular packing, crystallinity, growth mode, and purity. In order to achieve the best possible performance, it is critical to understand how organic semiconductors nucleate and grow. Clever use of surface and dielectric modification chemistry can allow one to control the growth and morphology, which greatly influence the electrical properties of the organic transistor. In this Review, the nucleation and growth of organic semiconductors on dielectric surfaces is addressed. The first part of the Review concentrates on small‐molecule organic semiconductors. The role of deposition conditions on film formation is described. The modification of the dielectric interface using polymers or self‐assembled monolayers and their effect on organic‐semiconductor growth and performance is also discussed. The goal of this Review is primarily to discuss the thin‐film formation of organic semiconducting species. The patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere (see the Review by Liu et. al). 1 The second part of the Review focuses on polymeric semiconductors. The dependence of physico‐chemical properties, such as chain length (i.e., molecular weight) of the constituting macromolecule, and the influence of small molecular species on, e.g., melting temperature, as well as routes to induce order in such macromolecules, are described. 相似文献
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