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1.
Mössbauer, EPR and magnetization experiments have been carried out on the glass composition Na2O-SiO2-Fe2O2-Y2O3 in which yttrium iron garnet (YIG) can be precipitated by suitable heat-treatment. The measurements have been carried out on the as-quenched sample as well as samples heat-treated for 4 h at 400, 500, 600, 650, 700, 750, 810 and 850 C. Mössbauer spectra from the as-quenched sample as well as the first six samples showed a quadrupole splitting while the last two samples, as well as the sample heat-treated (i) by a two-stage process at 600 C and then at 750 C for 4 h each, and (ii) at 700 C for 40 h, showed a hyperfine as well as quadrupole splitting. The behaviour of the isomer shift (IS) and quadrupole splitting (E) with the heat-treatment temperature show significant changes at the glass transition and crystallization temperatures. The Mössbauer data have been found consistent with optical and electron micrographs which show a large variation in particle size of the precipitated magnetic phase. This has been further correlated with EPR and magnetization data.  相似文献   

2.
We show how to construct integral results for the multi-dimensional nonlinear diffusion equation c/t=·(D(c)c) and for some generalisations of this. For appropriate boundary conditions these become integral invariants. An application of these results to determining the large-time behaviour of some radially symmetric problems is indicated.  相似文献   

3.
The dielectric properties of chemically vapour-deposited (CVD) amorphous and crystalline Si3N4 were measured in the temperature range from room temperature to 800° C. The a.c. conductivity ( a.c.) of the amorphous CVD-Si3N4 was found to be less than that of the crystalline CVD-Si3N4 below 500° C, but became greater than that of the crystalline CVD-Si3N4 over 500° C due to the contribution of d.c. conductivity ( d.c.). The measured loss factor () and dielectric constant () of the amorphous CVD-Si3N4 are smaller than those of the crystalline CVD-Si3N4 in all of the temperature and frequency ranges examined. The relationships of n-1, (- ) n-1 and/(- ) = cot (n/2) (were observed for the amorphous and crystalline specimens, where is angular frequency andn is a constant. The values ofn of amorphous and crystalline CVD-Si3N4 were 0.8 to 0.9 and 0.6 to 0.8, respectively. These results may indicate that the a.c. conduction observed for both of the above specimens is caused by hopping carriers. The values of loss tangent (tan) increased with increasing temperature. The relationship of log (tan) T was observed. The value of tan for the amorphous CVD-Si3N4 was smaller than that of the crystalline CVD-Si3N4.  相似文献   

4.
Approximate analytic calculations of the functional derivative ofT c with respect to 2()F() for anisotropic superconductors are presented, with the primary purpose of identifying the determining material parameters. The square-well model for the phonon-mediated electron-electron interaction, the weak coupling limit ( c /2T c 1), and separable anisotropy are used. The general behavior of T c /2()F() is the same as that found in numerical calculations for the case of small anisotropy, a 2/(–*)1; the regime of * is also discussed.  相似文献   

5.
We have solved the Eliashberg gap equations which are valid for arbitrary phonon frequency, (ph), electron-phonon coupling constant, (), and screened Coulomb interaction, ( *). We have used values of (ph),, and ( *) appropriate to the cuprate superconductors, and calculated the density of states, the pair potential., and the value of the gap at T=0 K. Using the linearized Eliashberg equations in the matrix representation, we have calculatedT c and 2/k T c . We have found that we can account for the highT c 's in the cuprates with reasonable values for, *, and ph.  相似文献   

6.
A minimax approximation, uniform for Bi [0, ), is developed for the roots of the equation BiW()=V(), by means of Chebyshev polynomials.Translated from Inzhenero-Fizicheskii Zhurnal, Vol. 28, No. 4, pp. 710–715, April, 1975.  相似文献   

7.
Summary The response of a solidly rotating liquid bridge consisting of inviscid liquid is determined for pitch excitation about its undisturbed center of mass. Free liquid surface displacement and velocity distribution has been determined in the elliptic (>20) and hyperbolic (<20) excitation frequency range.List of symbols a radius of liquid column - h length of column - I 1 modified Besselfunction of first kind and first order - J 1 Besselfunction of first kind and first order - r, ,z cylindrical coordinates - t time - u, v, w velocity distribution in radial-, circumferential-and axial direction resp. - mass density of liquid - free surface displacement - velocity potential - 0 rotational excitation angle - 0 velocity of spin - forcing frequency - 1n natural frequency - surface tension - acceleration potential - for elliptic range >20 - for hyperbolic range >20  相似文献   

8.
A method is proposed for the joint determination of the coefficients of horizontal particle diffusion and external heat exchange in a stagnant fluidized bed.Notation cf, cs, cn specific heat capacities of gas, particles, and nozzle material, respectively, at constant pressure - D effective coefficient of particle diffusion horizontally (coefficient of horizontal thermal diffusivity of the bed) - d equivalent particle diameter - dt tube diameter - H0, H heights of bed at gas filtration velocities u0 and u, respectively - Ha height of active section - l width of bed - L tube length - l o width of heating chamber - N number of partition intervals - p=H/H0 expansion of bed - sn surface area of nozzle per unit volume of bed - Sh, Sv horizontal and vertical spacings between tubes - tc, t0, ts, tn, tw initial temperature of heating chamber, entrance temperature of gas, particle temperature, nozzle temperature, and temperature of apparatus walls, respectively - u0, u velocity of start of fluidization and gas filtration velocity - y horizontal coordinate - *, coefficient of external heat exchange between bed and walls of apparatus and nozzle - 1, 1, 2, ... coefficients in (4) - thickness of tube wall - b bubble concentration in bed - 0 porosity of emulsion phase of bed - n porosity of nozzle - =(ts – t0)/(tc – t0) dimensionless relative temperature of particles - n coefficient of thermal conductivity of nozzle material - f, s, n densities of gas, particles, and nozzle material, respectively - be=s(1 – 0) (1 – b) average density of bed - time - max time of onset of temperature maximum at a selected point of the bed - R =l o/l Fourier number - Pe = 1 l 2/D Péclet number - Bi = /n Biot number Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 41, No. 3, pp. 457–464, September, 1981.  相似文献   

9.
Conversion-electron Mössbauer spectra of epitaxial -Fe16N2 and -Fe8N films have been studied and their differences are discussed in detail. The Mössbauer spectrum of -Fe16N2 can be decomposed into three subspectra, which correspond to the 4d, 8h and 4c sites. The Mössbauer spectrum of -Fe8N can be fitted using four spectra based on a nitrogen-atom-random-distribution model. The average hyperfine field is larger (3%) for -Fe16N2 than for -Fe8N, which is approximately consistent with a 4.1% enhancement of the magnetic moments for -Fe16N2. The iron moments tend to locate in the film plane for -Fe16N2 and to arrange perpendicularly to the film plane for -Fe8N.  相似文献   

10.
High-resolution measurements of are reported for liquid4He and3He-4He mixtures at saturated vapor pressures between 1.2 and 4.2 K with particular emphasis on the superfluid transition. Here is the mass density, the shear viscosity, and in the superfluid phase both and are the contributions from the normal component of the fluid ( n and n ). The experiments were performed with a torsional oscillator operating at 151 Hz. The mole fraction X of3He in the mixtures ranged from 0.03 to 0.65. New data for the total density and data for n by various authors led to the calculation of . For4He, the results for are compared with published ones, both in the normal and superfluid phases, and also with predictions in the normal phase both over a broad range and close to T. The behavior of and of in mixtures if presented. The sloped/dT near T and its change at the superfluid transition are found to decrease with increasing3He concentration. Measurements at one temperature of versus pressure indicate a decreasing dependence of on molar volume asX(3He) increases. Comparison of at T, the minimum of n in the superfluid phase and the temperature of this minimum is made with previous measurements. Thermal conductivity measurements in the mixtures, carried out simultaneously with those of , revealed no difference in the recorded superfluid transition, contrary to earlier work. In the appendices, we present data from new measurements of the total density for the same mixtures used in viscosity experiments. Furthermore, we discuss the data for n determined for4He and for3He-4He mixtures, and which are used in the analysis of the data.  相似文献   

11.
The critical curve of a transition of the second kind in an antiferromagnetic superconductor (AFS) with nonmagnetic impurities has been studied. The AFS is described by using the mean-field model given by Nass, Levin, and Grest and assuming a one-dimensional electron band. We find that the points on the critical curve satisfy the thermodynamic stability condition for 01/05.04 and 0.49HQ/01.64.Here 1 is the inverse lifetime of a conduction electron for nonmagnetic impurity scattering,H Q is the antiferromagnetic molecular field, 0 is the zero-temperature order parameter of a superconductor in the absence ofH Q and impurities. Further, 1 and HQ denote the values of these quantities for points on the critical curve. For 1/0>5.04 and HQ/0>1.64, the phase transition from the superconducting to the normal state is always of the second kind. Some thermal properties of the system near the critical curve have also been investigated and we find that these depends dramatically on the impurity concentration.  相似文献   

12.
Contrary to previous statements in the literature, large deviations from Matthiessen's rule in fine wiresare to be expected on the basis of a straight-forward solution of the ordinary transport equation, assuming the relaxation-time approximation and imposing the idealized condition of diffuse scattering of electrons at the boundaries. Using Chambers' path-integral method to evaluate the current density in a wire of arbitrary cross-sectional shape, the effects of boundary scattering on the resistivity in the regimed 0.1 have been calculated for two model Fermi surface geometries. For the temperature-dependent part of the resistivity, d (T) d (T)– d (0), two distinct types of behavior are found in the alternative cases: (1) for a spherical Fermi surface, d(T) increases logarithmically with d(0); (2) for a cylindrical Fermi surface, d (T) increases essentially linearly with d (0). [In each case the qualitative dependence of d(0) on /d is, for practical purposes, linear. However, the correct value of the product in the cylindrical case is not simply given in the ordinary way by the slope of an empirical plot of d (0) vs.d –1.] A comparison of theoretical results for the two simple models with the published data for indium and gallium shows that the actual temperature-dependent size effects are consistent, both qualitatively and, by a rough estimation, quantitatively, with the expected behavior.  相似文献   

13.
Tensile tests at 20° C have been carried out on seventy-three sapphire whiskers and on seventeen silicon nitride whiskers. The sapphire whiskers were of 0001, 1¯120, 10¯10, and 10¯11 orientations, while the silicon nitride whiskers were 0001, 11¯20, and 10¯13. Tensile strengths were in the range 45 to 1500 kg/mm2, and deformation was found to be purely elastic. The tensile strength data have been analysed and fitted to empirical equations describing the effect of size on strength for different orientations. These empirical equations have been used to deduce possible fracture nucleation mechanisms. It is concluded that, in the case of 0001 sapphire whiskers, fracture nucleation may be due to dislocation pile-ups or interactions, while in the other cases a Griffith flaw mechanism is probably applicable.  相似文献   

14.
Crystallization kinetics is studied in glassy Ge20Se80–xInx (0 x 20) using isothermal annealing at temperatures between the glass transition and melting. D.c. conductivity is taken as a parameter to estimate the extent of crystallization (). The activation energy of crystallization (E) and the order parameter (n) are calculated by fitting the values of in the Avrami equations of isothermal crystallization. The results indicate that E is highly composition-dependent, which is explained in terms of the stable phases in the Ge-Se-In system.  相似文献   

15.
Surface impedance measurements in the normal and superconducting state are an excellent method to study conduction electron dynamics and extended defects. Electron dynamics show up most clearly in the relaxation range, i.e., for distances traveled in one rf periods= F/ ( F Fermi velocity) being smaller or of the order of the penetration depth and mean free pathl. For materials with F107 cm/sec the relaxation range is easily accessible forf0.1 THz. Then, in the normal state, relaxation defines the surface impedance with an intrinsic penetration depth I approaching the London penetration depth L andR I 0 L/ 2 as surface resistance, allowing measurement of L and relaxation time(T, ). In the superconducting state the photon interaction scales with L/ L=1/( F dimension of Cooper pairs forl) and causes at low frequencies an absorption rate growing with, which is decreasing with F/l. The rate increase proportional to turns to a decrease above 0.1 THz, which is accompanied by a decrease ofA with frequency which is stronger for large and small F/l. These characteristic dependences allow measurement of material parameters, anisotropy, and dynamics of electrons, especially the relaxation rate. But presently, the rf surface impedanceZ is still shrinking with material improvements, which shows, clearly, that theZ=Z I+Z res is still dominated by extrinsic properties summarized inZ res. We present evidence thatZ res is due to the large leakage currentj bl and the smallj cJ of weak links where the latter destroys the intrinsic shielding from a I-thin seam J deep into the bulk. This causes rf residual lossesR res( 0)2 J 3 bl/2.R res stays finite atT-0 due to bl(T0) bl(j bl) being amplified by ( J/ I)3>103 as a weighting factor. The appropriate measure of weak links are the grain-boundary resistanceR bn((0)) enhancing JR bn andR resR bn 2 . Thus,Z res is minimal for minimal extrapolated resistivity(T0).To identify the weak links as a new entity, the H-field dependence is most helpful, because at very low fieldsH c 1J1/ J Josephson fluxons penetrate into the weak links. These Josephson fluxons show negligible flux flow or flux creep, and enhanceZ res by J(H, T) . The measuredj cJ(H, T) andj bl values explainZ res quantitatively as well as in temperature (a+T n ) (n1,T<T c /2) and in field (b+H n ) (n1,H>H c1J) dependence. The strength of the field dependencedZ res/dHZ res(H c1J )/H c2J(T) is not only a measure ofZ res andH c2J(T) but is crucial for nonlinear effects and (fluxon) noise also, which limit the performance of rf devices.  相似文献   

16.
The compressibilities of the a- and c-axes for sodium - and -aluminas were determined up to 10 GPa from the pressure dependence of powder X-ray diffraction measured at room temperature using synchrotron radiation as an X-ray source. Powders of sodium - and -aluminas which were prepared from grinding synthesized single crystals were used as the specimens for X-ray diffraction. The compressibilities of - and -aluminas are 1.5 ± 0.2 ×10–12 and 1.7 ± 0.2 × 10–12 Pa–1 for the a-axis and 2.9 ± 0.2x10–12 and 1.6 ± 0.2 ×10–12 Pa–1 for the c-axis, respectively. For the c-axis, the compressibility of -alumina is larger than that of -alumina. This experimental fact is explained by the different stacking of oxygen layers and the different content in sodium ion between - and -aluminas.  相似文献   

17.
A new method to measure the thermal diffusivity of liquids is presented. It requires determination of the time dependence of the thermal expansion of the liquid when it is subjected to a heat source at the top of the cell containing the liquid. The high accuracy of the method (about 3%) is due to an essential reduction of convective currents and also to the absence of temperature detectors, which generally introduce unwanted perturbations on the thermal Field.Nomenclature Thermal conductivity - c Specific heat - Density - c = specific heat x density - h Newton coefficient - Thermal diffusivity - T, 0 Temperature - tV Electric signal - Calibration coefficient - exp, th Volume change of the liquid  相似文献   

18.
Using the structural approach, the temperature stresses are examined in a semiinfinite rod, insulated on the lateral faces and rigidly fixed at the end. A comparative analysis is made for three heat-transfer models.Notation k(t) heat flux relaxation function - (t) internal energy relaxation function - T rod temperature - ambient temperature - t time - x coordinate along the rod - xx(x, t) stress - u(x, t) displacement - (x, t) deformation - c0=(E/)1/2 speed of sound in the rod under isothermal conditions - E elasticity modulus - density of the material - t coefficient of thermal expansion - thermal-conductivity coefficient - a thermal-diffusivity coefficient - b thermal-activity coefficient - cq=(a/r)1/2 velocity of heat propagation - r heat flux relaxation time - (t) unique Heaviside function Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 33, No. 5, pp. 912–921, November, 1977.  相似文献   

19.
The electric Ohm resistivity of electroless Cu depositions on dielectric substrates as a function of their thicknesses is studied. Substantial deviations (up to 10–20 times) from the standard resistivity ( = 1.7 cm–1) below 0.5 (m thicknesses are observed. The experimental data show for the entire region of thicknesses (d 0.07–5 m) a power function between the relative resistivity changes (/) and the inverse thickness of depositions (d )–(/ (1/d )0.8. This empirical relation is discussed as an effect of the porous structure of the metallic layers deposited on the substrate. A scanning electron micrography was applied in order to visualize the morphology of the depositions. The micrographs clearly show the evolution of the deposition profile: starting from separate islands at the very beginning of the process, and gradually covering the entire area with continuous but porous metal layers.  相似文献   

20.
An imperfectly B2 ordered Fe3Al aggregate was cast, thermomechanically hot rolled and finally annealed at 870 K. Subsequently, the specimen was rolled at 800–830 K to a strain of 80%. The microstructure and the crystallographic texture of the rolled polycrystalline sample was investigated within the range =20–80%. The microstructure consisted of flat, elongated grains. In numerous grains straight slip lines were detected. Even after =80% recrystallization was not observed. The rolling texture of Fe3Al considerably deviates from that of non-ordered body centered cubic (b.c.c.) alloys and pure b.c.c. metals. The {111}uvw texture fibre (7-fibre) was very pronounced, while the {hkl}110 fibre (-fibre) was very weak. The {112}110 orientation which represents the strongest texture component in non-ordered b.c.c. alloys did not occur at all. The textures are discussed in terms of the {110}111, {112}111, {112}111 and {123}111 slip systems. The contribution of crystallographic slip of the various types of potential slip systems was simulated by means of the Taylor theory.  相似文献   

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