Randomization of heavily damaged regions in annealed low energy Ge(+)-implanted (001)Si

Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge(+)-implanted (001)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation.     

In situ dynamic HR-TEM and EELS study on phase transitions of Ge2Sb2Te5 chalcogenides

The phase transition phenomena of Ge2Sb2Te5 chalcogenides were investigated by in situ dynamic high-resolution transmission electron microscopy (HR-TEM) and electron energy loss spectroscopy (EELS). A 300kV field emission TEM and a 1250kV high voltage TEM were employed for the in situ heating experiments from 20 to 500 degrees C for undoped and 3wt% nitrogen-doped Ge2Sb2Te5 thin films deposited by DC sputtering. Crystallization of amorphous Ge2Sb2Te5 to its cubic structure phase started at 130 degrees C and then rapid crystal growth developed from cubic to hexagonal phase in the range of 130-350 degrees C; finally, the hexagonal crystals started to melt at 500 degrees C. For nitrogen-doped Ge2Sb2Te5, its crystallization from amorphous film occurred at higher temperature of ca. 200 degrees C, and the cubic and hexagonal phases were usually formed simultaneously without significant growth of crystals at further heating to 400 degrees C. EELS measurements showed that the electronic structures of Ge, Sb and Te stayed almost the same regardless of the amorphous, FCC and hexagonal phases. The nitrogen doped in Ge2Sb2Te5 was confirmed to exist as a nitride. Also, the doped nitrogen distributed homogeneously in both amorphous and crystalline phases. Localization of doped nitrogen was not found in the grain boundary of crystallized phases. The dynamic process of phase transition was enhanced by high-energy electron irradiation. Peeling of atomic layers in nitrogen-doped Ge2Sb2Te5 film was detected during heating assisted with electron beam irradiation.     

A tridimensional view of the organization of actin filaments in the central nervous system by use of fluorescent photooxidation

Cellular and subcellular organization and distribution of actin filaments have been studied with various techniques. The use of fluorescence photo-oxidation combined with phalloidin conjugates with eosin has allowed the examination of the precise cellular and subcellular location of F-actin. Correlative fluorescence light microscopy and transmission electron microscopy studies of F-actin distribution are facilitated with this method for morphological and physiological studies. Because phalloidin-eosin is smaller than other markers, this method allows the analysis of the three-dimensional location of F-actin with high-resolution light microscopy, three-d serial sections reconstructions, and electron tomography. The combination of selective staining and three-dimensional reconstructions provide a valuable tool for revealing aspects of the synaptic morphology that are not available when conventional electron microscopy is used. By applying this selective staining technique and three-dimensional imaging, we uncovered the structural organization of actin in the postsynaptic densities in physiological and pathological conditions.     

Modification of Mo-Si alloy microstructure by small additions of Zr

Molybdenum and its alloys are potential materials for high-temperature applications. However, molybdenum is susceptible to embrittlement because of oxygen segregation at the grain boundaries. In order to alleviate the embrittlement small amounts of zirconium were alloyed to a solid solution of Mo-1.5Si alloy. Two Mo-based alloys, namely Mo-1.5Si and Mo-1.5Si-1Zr, were investigated by the complementary high-resolution methods transmission electron microscopy and atom probe tomography. The Mo-1.5Si alloy shows a polycrystalline structure with two silicon-rich intermetallic phases Mo₅Si₃ and Mo₃Si located at the grain boundaries and within the grains. In addition, small clusters with up to 10 at% Si were found within the molybdenum solid solution. Addition of a small amount of zirconium to Mo-1.5Si leads to the formation of two intermetallic phases Mo₂Zr and MoZr₂, which are located at the grain boundaries as well as within the interior of the grain. Transmission electron microscopy shows that small spherical Mo-Zr-rich precipitates (<10 nm) decorate the grain boundaries. The stoichiometry of the small precipitates was identified as Mo₂Zr by atom probe tomography. No Si-enriched small precipitates were detected in the Mo-1.5Si-1Zr alloy. It is concluded that the presence of zirconium hinders their formation.     

Carbon-fibre reinforced magnesium alloys: nanostructure and chemistry of interlayers and their effect on mechanical properties

The micromechanical fracture behaviour of C/Mg–Al composites of varying interface reactivity was investigated by scanning electron microscope bending tests. Structure and chemistry of fibre/matrix interlayers were studied down to the atomic scale by imaging and spectroscopical transmission electron microscope techniques (high-resolution electron microscopy, energy dispersive X-ray spectroscopy, parallel-recording electron energy loss spectroscopy and energy-filtered transmission electron microscopy). The chemical reactions at the fibre/matrix interfaces of the C/Mg–Al composites were found to form plate-shaped carbidic precipitates, mainly Al₂MgC₂, which strongly influence the composite's mechanical properties by changing the fibre/matrix bonding strength.     

Effects of 10 MeV electron irradiation at high temperature of a Ni-Mo-based Hastelloy

A Hastelloy alloy was irradiated with 10 MeV electrons at 650 degrees C for 700 h to a total dose of 2 x 10(-3) displacements per atom (dpa). The microstructure of irradiated and non-irradiated specimens of this alloy were investigated by transmission electron microscopy (TEM). The non-irradiated specimens were analyzed by 3-D atom probe tomography (APT) in a local-electrode atom-probe (LEAP). TEM analysis before the irradiation detects small precipitates with a mean diameter of 22 nm, which are coherent with the FCC matrix. The number density of these precipitates is approximately 7 x 10(18) m(-3). Electron diffraction patterns from these precipitates exhibit superlattice reflections corresponding to the L1(2) ordered structure. The chemical composition of the precipitates, as measured by APT, is around 75 at% Ni with additions of Al, Ti and Mo. After electron irradiation, small precipitates with an irregular morphology are observed. The number density of these new precipitates about 10(20) m(-3) is greater than that of the L1(2) ordered precipitates before irradiation. The L1(2) superlattice reflections disappear completely, instead diffuse diffraction spots are observed at 1(1/2)0(FCC), which is attributed to compositional short-range order (SRO). The results are discussed with respect to the influence of the electron irradiation on the morphology and structure of the ordered precipitates.     

Aluminium–aluminium nitride composites fabricated by melt infiltration under pressure

Aluminium–matrix composites containing ~55 vol.% AlN particles were fabricated by melt infiltration of aluminium into an AlN preform under a pressure of up to 130 MPa. Two different AlN powders (H.C. Starck, Goslar, Germany, and ESK, Elektroschmelzwerk, Kempten, Germany) and four types of aluminium alloy (2024, 1070, 6060 and 5754) were used. The initial AlN powders were characterized by scanning electron microscopy. The composites were studied by light microscopy, scanning and transmission electron microscopies and energy-dispersive X-ray spectroscopy. Particle–matrix interfaces were observed using high-resolution electron microscopy. As a result of the melt infiltration process, the composites are very dense and the microstructure shows a homogeneous distribution of the reinforcement. The interfaces are clean with very little porosity. Some Al₂Cu precipitates were observed in the 2024 matrix.     

Maximum diameter of the rod-shaped specimen for transmission electron microtomography without the "missing wedge"

In our recent study, the complete rotation of a rod-shaped specimen during transmission electron microscopy (TEM) has been successfully carried out, yielding a truly quantitative three-dimensional (3D) structure of a ZrO(2)/polymer nano-composite. This result allows the further development of transmission electron microtomography (TEMT) for materials science. The diameter of the rod-shaped specimen was about 150 nm, which may not be statistically large enough to evaluate structural parameters, e.g., volume fraction of Zr nano-particles. Thus, it is preferable to image rods with larger diameters in 3D. In this study, several rod-shaped specimens whose diameters ranged from 150 to 530 nm were subjected to the "distortion-free TEMT". The maximum diameters, l, observable under 200 and 300 kV-TEMTs were, respectively, 460-470 and 600-670 nm (corresponding the maximum relative diameters, l/lambda (lambda: mean free path), were ca. 2.2 and 2.7-3.0).     

A computerized graphical method for analysing stereo photo-micrographs

A method has been devised for presenting three-dimensional information from stereo pairs of electron micrographs in a graphical form. From this it is possible to obtain information about the spatial distribution of defects or precipitates, the existence and depth of denuded zones, the thickness, and the surface topography of thin foils examined by transmission electron microscopy.     

001] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(001)

Coherent Ge(Si)/Si(001) quantum dot islands grown by solid source molecular beam epitaxy at a growth temperature of 700 degrees C were investigated using transmission electron microscopy working at 300kV. The [001] zone-axis bright-field diffraction contrast images of the islands show strong periodicity with the change of the TEM sample substrate thickness and the period is equal to the effective extinction distance of the transmitted beam. Simulated images based on finite element models of the displacement field and using multi-beam dynamical diffraction theory show a high degree of agreement. Studies for a range of electron energies show the power of the technique for investigating composition segregation in quantum dot islands.     

Pushing the resolution limits in cryo electron tomography of biological structures

Cryo electron tomography is a three-dimensional imaging technique that is suitable for imaging snapshots of the structural arrangements of biomolecular complexes and macromolecules, both in vitro and in the context of the cell. In terms of attainable resolution, cryo electron tomographic reconstructions now show resolvable details in the 5-10 nm range, connecting optical microscopy with molecular imaging techniques. In view of the current developments in super-resolution light microscopy and correlative light and electron microscopy, cryo electron tomography will be increasingly important in structural biology as a tool to bridge light microscopy with molecular imaging techniques like NMR, X-ray diffraction and single particle electron microscopy. In cell biology, one goal, often referred to as visual proteomics, is the molecular mapping of whole cells. To achieve this goal and link cryo electron tomography to these high-resolution techniques, increasing the attainable resolution to 2-5 nm is vital. Here, we provide an overview of technical factors that limit the resolution in cryo electron tomography and discuss how during data acquisition and image processing these can be optimized to attain the highest possible resolution. Also, existing resolution measurement approaches and current technological developments that potentially increase the resolution in cryo electron tomography are discussed.     

Contribution of high-resolution correlative imaging techniques in the study of the liver sieve in three-dimensions

Correlative microscopy has become increasingly important for the analysis of the structure, function, and dynamics of cells. This is largely due to the result of recent advances in light-, probe-, laser- and various electron microscopy techniques that facilitate three-dimensional studies. Furthermore, the improved understanding in the past decade of imaging cell compartments in the third dimension has resulted largely from the availability of powerful computers, fast high-resolution CCD cameras, specifically developed imaging analysis software, and various probes designed for labeling living and or fixed cells. In this paper, we review different correlative high-resolution imaging methodologies and how these microscopy techniques facilitated the accumulation of new insights in the morpho-functional and structural organization of the hepatic sieve. Various aspects of hepatic endothelial fenestrae regarding their structure, origin, dynamics, and formation will be explored throughout this paper by comparing the results of confocal laser scanning-, correlative fluorescence and scanning electron-, atomic force-, and whole-mount electron microscopy. Furthermore, the recent advances of vitrifying cells with the vitrobot in combination with the glove box for the preparation of cells for cryo-electron microscopic investigation will be discussed. Finally, the first transmission electron tomography data of the liver sieve in three-dimensions are presented. The obtained data unambiguously show the involvement of special domains in the de novo formation and disappearance of hepatic fenestrae, and focuses future research into the (supra)molecular structure of the fenestrae-forming center, defenestration center and fenestrae-, and sieve plate cytoskeleton ring by using advanced cryo-electron tomography.     

Helium ion microscopy for high-resolution visualization of the articular cartilage collagen network

The articular cartilage collagen network is an important research focus because network disruption results in cartilage degeneration and patient disability. The recently introduced helium ion microscope (HIM), with its smaller probe size, longer depth of field and charge neutralization, has the potential to overcome the inherent limitations of electron microscopy for visualization of collagen network features, particularly at the nanoscale. In this study, we evaluated the capabilities of the helium ion microscope for high-resolution visualization of the articular cartilage collagen network. Images of rabbit knee cartilage were acquired with a helium ion microscope; comparison images were acquired with a field emission scanning electron microscope (FE-SEM) and a transmission electron microscope (TEM). Sharpness of example high-resolution helium ion microscope and field emission scanning electron microscope images was quantified using the 25-75% rise distance metric. The helium ion microscope was able to acquire high-resolution images with unprecedented clarity, with greater sharpness and three-dimensional-like detail of nanoscale fibril morphologies and fibril connections, in samples without conductive coatings. These nanoscale features could not be resolved by field emission scanning electron microscopy, and three-dimensional network structure could not be visualized with transmission electron microscopy. The nanoscale three-dimensional-like visualization capabilities of the helium ion microscope will enable new avenues of investigation in cartilage collagen network research.     

Sample preparation for electron microscopy of internal cell structure.

Methods are reviewed for examination of internal cell structure by high-resolution scanning electron microscopy and compared with the rapid-freeze deep-etch replica technique used in transmission electron microscopy. Rapid freezing of fresh material, followed by freeze-fracture, provides a theoretically attractive approach in ultrastructure studies, but the high protein and solute content of most cells prevents a deep three-dimensional view for material frozen without some form of extraction. After discussion of other methods it is concluded that the most useful general approach, at least for cultured cells, is to first permeabilize or break open the cells in a medium which preserves the structure under study in a functional state as, for example, the movement of chromosomes along the division spindle, or transport of proteins within the Golgi region. After permeabilization, with attendant partial extraction, the preparation can be fixed, then viewed by either deep-etch replication, or by high-resolution scanning electron microscopy, with structure of interest revealed in deep view.     

Investigation of the local Ge concentration in Si/SiGe nanostructures by convergent-beam electron diffraction

SiGe multi quantum well structures were investigated by convergent-beam electron diffraction (CBED) measurements. Detailed layer characterizations were performed by acquiring series of bright field CBED patterns in the form of a line scan across the nanostructures in scanning transmission electron microscopy (STEM) mode. From the higher order Laue zone (HOLZ) lines the local lattice parameters were deduced. The Ge concentration corresponding to these lattice parameters was determined by means of the elasticity theory. In this work it is shown that the lattice constants can be determined locally with an accuracy of about ±0.001 to ±0.003 Å which leads to an accuracy of the corresponding Ge concentration of about 1–2%. The characteristics of the focused electron probe and its influence on the experimental data were used for an estimation of the spatial resolution of the CBED method. For comparison, experimental values regarding the spatial resolution were determined by investigating the abrupt interface between Si(1 1 1) and AlN(0 0 0 1).     

Comparing electron tomography and HRTEM slicing methods as tools to measure the thickness of nanoparticles

Nanoparticles’ morphology is a key parameter in the understanding of their thermodynamical, optical, magnetic and catalytic properties. In general, nanoparticles, observed in transmission electron microscopy (TEM), are viewed in projection so that the determination of their thickness (along the projection direction) with respect to their projected lateral size is highly questionable. To date, the widely used methods to measure nanoparticles thickness in a transmission electron microscope are to use cross-section images or focal series in high-resolution transmission electron microscopy imaging (HRTEM “slicing”). In this paper, we compare the focal series method with the electron tomography method to show that both techniques yield similar particle thickness in a range of size from 1 to 5 nm, but the electron tomography method provides better statistics since more particles can be analyzed at one time. For this purpose, we have compared, on the same samples, the nanoparticles thickness measurements obtained from focal series with the ones determined from cross-section profiles of tomograms (tomogram slicing) perpendicular to the plane of the substrate supporting the nanoparticles. The methodology is finally applied to the comparison of CoPt nanoparticles annealed ex situ at two different temperatures to illustrate the accuracy of the techniques in detecting small particle thickness changes.     

The influence of elastic strain on the early stages of decomposition in Cu–1.7 at% Fe

The initial stage of decomposition of homogenized Cu–1.7 at% Fe at 722 K was investigated by means of field ion microscopy (FIM), atom probe tomography (APT) and computer-assisted field ion image tomography (cFIIT). The agglomeration of atoms depending on time could be investigated and the growth of precipitates with a diameter of few nanometers was observed during ongoing nucleation.     

Artifacts in aberration-corrected ADF-STEM imaging

The introduction of an experimental black level may introduce unintended artifactual details into high-resolution annular dark field scanning transmission electron microscopy (ADF-STEM) lattice images. This article presents the multislice simulation results of such possible situations. Three simulated scanning transmission electron microscopy (STEM) probes of sizes 0.8, 1.2 and 2.0 A are scanned on the surface of a <1;10> oriented Si/Ge crystal. The simulation results suggest that high-frequency artifact peaks will appear in the power spectra when an artificial black level clips the lowest (background) signal. The lowest signal in an ADF-STEM image decreases as the incident probe shrinks in size. Therefore, care must be taken when interpreting the resolution limit of the microscope from images taken with nonzero black level setting, especially in case of sub-A microscope. The simulation result is compared with an experimental image and they agree with each other. The analysis suggests that aberration corrected STEM provide sensitive low level detail.     

Evolution of tip shape during field evaporation of complex multilayer structures

Atom-probe tomography analysis of complex multilayer structures is a promising avenue for studying interfacial properties. However, significant artefacts in the three-dimensional reconstructed data arise due to the field evaporation process. To clarify the origin and impact of these artefacts for a FeCoB/FeCo/MgO/FeCo/IrMn multilayer, tip shapes were observed by transmission electron microscopy and compared to those obtained by finite difference modelling of electric fields and evaporation processes. It was found that the emitter shape is not spherical and its surface morphology evolves during successive evaporation of the different layers. This evolving morphology contributes to the artefacts generally observed in the reconstructed atom-probe data for multilayer structures because algorithms for three-dimensional reconstruction are based on the assumption that the shape of the emitter during field evaporation is spherical. Some proposed improvements to data reconstruction are proposed.     

Transmission Electron Microscope Investigations Of Defects Produced By Individual Displacement Cascades In Si And Ge

Monocrystalline {111} Si and Ge specimens have been irradiated with atomic and molecular heavy ions in order to study the influence of the cascade energy density and the interaction between displacement cascades on the defect production. Transmission electron microscope (TEM) studies were performed to investigate the defect parameters. After atomic irradiation of Si and Ge the defects analysed (typical size 3–5 nm) are of interstitial type. Both defects with three-dimensional strain centres and defects with a strongly asymmetric strain field were observed. An analysis of the yield and the defect size in Si as a function of ion dose suggests that the defects are formed within individual cascades rather than by a process involving overlapping cascades. Changes of the energy density locally deposited in the lattice do not affect yield and size significantly. Under otherwise similar experimental conditions, the average defect depth is significantly larger for Bi₂+ irradiations than for Bi+ irradiations.