Low-loss single-mode GaAs/AlGaAs miniature optical waveguides withstraight and bending structures

Low-loss single-mode GaAs/AlGaAs miniature optical waveguides fabricated for use in monolithically integrated optical circuits are discussed. The propagation characteristics of these waveguides with straight and S-bending structures have been investigated at wavelengths of 1.30 and 1.55 μm. The lowest propagation losses are estimated to be 0.58 dB/cm and 0.69 dB/cm at wavelengths of 1.30 and 1.55 μm, respectively. The total loss of an S-bending waveguide with a curvature radius of 2 mm and with a lateral displacement of 200 μm was 0.61 dB and 0.46 dB at wavelengths of 1.30 and 1.55 μm. The fabricated single-mode strip-loaded waveguides proved to be suitable for application of the semiconductor waveguide into monolithically integrated optical circuits     

GaAs/GaAlAs curved rib waveguides

Curved dielectric optical waveguides suffer from radiation loss due to bending. To minimize the bending loss and reduce the radius of curvature, it is necessary to fabricate guides which provide strong optical confinement. This paper gives a brief review of curved waveguide analysis and presents some experimentally measured loss values for GaAs/GaAlAs curved rib waveguides. The rib waveguides, fabricated using ion beam milling, have a large rib height and are tightly guided structures. When corrected for reflection losses and input coupling efficiency, a minimum loss of approximately 3 dB has been achieved for a multimode 90° curved guide with a radius of curvature of 300 μm, and 8.5 dB for a single-mode curved guide with a radius of curvature of 400 μm. It is believed that most of this residual loss is not radiation loss due to bending, but rather scattering loss due to rib wall imperfections.     

Very low-loss GaInAs/InP optical waveguides for the 10.6?m wavelength

Optical waveguides for the 10.6?m wavelength have been fabricated using the MOCVD technique in the InP/GaInAs system. First, the indices of refraction of the relevant materials are determined using integrated-optic techniques. Then, high-optical-quality optical waveguides are reported with propagation losses as low as 0.7 dB/cm. These structures are the basis of more sophisticated electrically controlled devices for 10.6 ?m.     

Analysis of leakage properties and guiding conditions of ribantiresonant reflecting optical waveguides

Power leakage properties and guiding conditions of rib antiresonant reflecting optical waveguides (rib-ARROW) have been theoretically and experimentally studied as a function of wavelength and polarization of the light for different geometrical and optical parameters that characterize the rib-ARROW structure. Obtained results show that rib-ARROWs can only be fabricated with low losses in a wavelength range when determined rib configurations are adopted. Furthermore, these waveguides exhibit a polarization sensitivity that largely depends on the core-substrate refractive index difference. Together with the experimental results, theoretical calculations from different modeling methods are also presented and discussed     

A small-size polarization splitter based on a planar optical phasedarray

A device is proposed in which the dispersive properties of an array of bent optical waveguides are utilized for splitting the two polarizations present in the input waveguide. An experimental device for operation at a 633-μm wavelength, with dimensions of 0.6×2.5 mm ², was designed and fabricated using conventional (high-quality) optical lithography. Insertion losses as low as 0.5 dB and far-end crosstalk values of 17-21 dB have been achieved     

离子交换铒掺杂磷酸盐玻璃波导特性研究

给出有关离子交换铒掺杂磷酸盐玻璃波导的制备以及发光特性的基本结果。用Ag+ Na+ 离子交换在含有适量氧化钠的铒掺杂磷酸盐玻璃上很容易实现低损耗平面波导 ,并且离子交换过程对这种玻璃的光谱特性没有影响。     

Design and fabrication of integrated Si-based optoelectronic devices

We have designed and fabricated novel Si-based optoelectronic devices. To this aim, different Si-based optical sources have been made and their performances at room temperature compared. Er-doped Si p–n junctions, operating at 1.54 μm and exhibiting an efficiency of 0.05% at room temperature, have been integrated with planar Si rib waveguides using either epitaxial Si or silicon on insulators (SOI) wafers. Optical characterization of these waveguides reveals very low transmission losses (below 1 dB/cm). However, Er-doping of the waveguide core, needed for the realization of the light source, results in a large increase of the losses as a consequence of absorption by the free electrons introduced by the rare earths. These losses can be suppressed when the junction is reverse biased and the whole Er profile is embodied in the depletion layer. Since this also allows efficient pumping of Er ions by hot carriers, the performances of the diodes and of the waveguides can be suitably combined. This optimized structure has also been used to design electrically pumped optical amplifiers and lasers, whose performances have been simulated.     

Single-mode optical waveguides and phase modulators in the InP material system

The characteristics of several different single-mode optical waveguides in the InP material system are discussed. Slab-coupled rib waveguides in GaInAsP (lambda_{gap} approx 1 mum) epitaxial layers grown on InP have shown propagation losses as low as 1.7 cm^-1at 1.3 μm and 2.7 cm^-1at 1.15 μm. Oxide-confined InP rib guides fabricated using a lateral overgrowth technique have losses of about 1.5 cm^-1at 1.15 μm. Three-guide couplers have been made by fabricating three parallel oxide-confined guides in close proximity. InP p+-n-n+ guides capable of modulating TE-polarized radiation have been fabricated using epitaxial techniques and Be-ion implantation. By measuring the phase difference between the TE-like and TM-like modes as a function of applied voltage, an estimate of the r41electrooptic coefficient in InP at 1.3 μm that is in good agreement with a previously reported value was obtained. Guides of this type should find use as the active components in InP switches and interferometers.     

Low-loss, single-mode, organic polymer waveguides utilizingrefractive index tailoring

Low-loss, single-mode optical waveguides have been fabricated from photopolymerizable acrylic monomers. The material system consists of a low-index cladding resin and a high-index core resin. The two resins are miscible so that precise control over the refractive index can be obtained. This allows the fabrication of single-mode waveguides with specific cross-sectional dimensions. One advantage of this is the ability to fabricate waveguides with high coupling efficiencies to other devices such as optical fiber or semiconductor lasers. The materials adhere to a wide variety of substrates and exhibit average waveguide losses of 0.56 dB/cm at 1300 nm for single-mode waveguides. Details of the fabrication procedure, index of refraction tailoring technique, and waveguide loss data are presented     

Low-loss high-silica single-mode channel waveguides

Low-loss high-silica single-mode channel optical waveguides of 0.1 dB/cm have been fabricated on crystal silicon substrates with fibre coupling losses of less than 0.05 dB by flame hydrolysis deposition and reactive ion etching. Directional couplers have also been fabricated with excess loss of 0.5 dB by this waveguide fabrication technique.     

Stacked polymeric multimode waveguide arrays for two-dimensional optical interconnects

Two-dimensional (2-D) polymeric multimode waveguide arrays with two reflection-mirrors have been fabricated for optical interconnects between 2-D arrayed vertical-cavity surface-emitting lasers and detectors. Contact printing lithography was adopted for simple and low-cost process using ultraviolet-curable epoxy-based polymers. Fabricated waveguides were diced of the same size and stacked one by one with lateral positional errors less than /spl plusmn/20 /spl mu/m. Two kinds of mirrors were fabricated: single-reflection mirror and double-reflection mirror. Double-reflected mirrors resulted in lower losses with 1.2 dB than single reflected mirrors with 2.1 dB. The average insertion losses of 16-channel arrayed waveguides with two single-reflection mirrors and with two double-reflection-mirrors were measured to be 6.1 and 4.4 dB for 6-cm-long waveguides at a wavelength of 830 nm, respectively. The crosstalk between the waveguides was less than -25 dB. The characteristics of the waveguide arrays are good enough for applications to optical interconnects.     

0.1 dB/cm waveguide losses in single-mode SOI rib waveguides

Waveguide losses as low as 0.1 dB/cm at a wavelength of /spl lambda/=1.3 /spl mu/m have been achieved in SOI rib waveguides fabricated by wet chemical etching. The single-mode waveguides have a large cross section yielding field mismatch losses to a standard single-mode fiber of only 0.17 dB/facet (both polarizations). Polarization independent fiber-chip-fiber insertion losses of 0.9 dB (best 0.5 dB) at a chip length of 60 mm have been measured.     

Low-loss polymeric optical waveguides fabricated with deuteratedpolyfluoromethacrylate

Deuterated polyfluoromethacrylate which has high transparency, low birefringence and good processability was newly synthesized for use as optical waveguide materials, and both single-mode and multimode optical waveguides were fabricated using the polymer. The propagation loss and waveguide birefringence of the single-mode waveguides were as low as 0.10 dB/cm and -5.5×10^-6 at 1.31 μm, respectively. The propagation losses of the multimode waveguides were less than 0.02 dB/cm at both 0.68 and 0.83 μm, and 0.07 dB/cm at 1.31 μm     

Laser-fabricated low-loss single-mode waveguiding devices in GaAs

A maskless laser etching technique was used to fabricate novel waveguides and waveguiding structures directly into the surface of GaAs/AlGaAs heterostructures. The modal and loss properties of these groove-defined structures have been measured as a function of waveguide geometry, and low-loss single-mode waveguides have been produced. The technique was used to fabricate various passive optical devices in a single processing step. Waveguide bend and branch losses were measured and are comparable to those in conventionally fabricated devices. Experimental results are described by simple theoretical models. The technique is attractive as a prototyping tool for developing and testing new integrated optic circuits     

Extremely low loss InP/GaInAsP rib waveguides

The authors have fabricated InP/GaInAsP rib waveguides with losses as low as 0.18 dB/cm for the TE polarisation and 0.26 dB/cm for the TM polarisation. The length of the waveguides was 28 mm. These losses are measured with the Fabry-Perot method and repeated for different lengths of the waveguide for determining the reflection coefficient.<>     

高温对Ge_xSi_(1-x)/Si光波导及材料的影响

用ＧｅｘＳｉ１－ｘ／Ｓｉ亚稳材料在高温下制作了光波导，它的传输损耗为０．８ｄＢ／ｃｍ，比低温工艺的０．５ｄＢ／ｃｍ稍大。并发现ＧｅｘＳｉ１－ｘ／Ｓｉ材料的大量失配位错和一些有趣的现象。     

Optical study of porous silicon buried waveguides fabricated from p-type silicon

The realisation of optical buried waveguides fabricated from porous silicon layers is presented. The refractive index of porous silicon layer varies according to its porosity and its oxidisation process conditions. So either step or graded index waveguides are achieved. These waveguides are formed by a localised anodisation of heavily doped p-type silicon wafers. Measurements at a wavelength of 1.3 μm yield waveguide losses below 4 dB/cm. The waveguides are also characterised by the near-field-guided mode profile at 1.3 μm. This study deals with the modulation of the waveguiding-layer refractive index and the losses on waveguides fabricated from p⁺.     

Disorder-induced buried-stripe optical waveguides in GaAs/AlGaAs MQW material

Buried-stripe optical waveguides have been fabricated in GaAs/AlGaAs multiquantum-well material by masked Si/sup +/ implantation followed by annealing at 750 degrees C to produce selective-area quantum well mixing. The waveguides were found to support both TE and TM modes with propagation losses of 33 and 56 dBcm/sup -1/, respectively, at a wavelength of 1.15 mu m.<>     

Radiation losses from sinusoidal serpentine bends in optical waveguides

Radiation losses due to curvature in optical waveguides with sinusoidal bends are found in terms of the amplitude and period of the fluctuation. For tolerable loss, the critical factor is the minimum radius of curvature, i.e. the radius of curvature at a point of maximum deviation.     

Fabrication of nickel stamp with improved sidewall roughness for optical devices

We proposed the simple and attractive fabrication method of nickel stamp with improved sidewall roughness for polymeric optical devices. For this, the imprinted optical devices patterns under optimum imprinting conditions were annealed to improve the sidewall roughness generated by the DRIE process in the silicon stamp fabrication. The annealed sidewall roughness is reduced to 24.6 nm, nearly decreasing by 76% compared with the result before the annealing. Then, low cost and durable nickel stamp with improved sidewall roughness was fabricated by the annealed polymeric patterns being used as original master for electroforming process. And, we verified the superiority of the improved nickel stamp by comparing the optical propagation losses for optical waveguides to be fabricated, respectively, using the nickel stamp and original silicon stamp. The optical waveguides fabricated by the imprint lithography using the improved nickel stamp was demonstrated that their optical losses were reduced as 0.21 dB/cm, which was less than the propagation loss for polymeric waveguides using the conventional original silicon stamp. This result could show the effectiveness of the fabricated nickel stamp with improved sidewall roughness. Furthermore, we were able to successfully fabricate a polymeric 1 × 8 beam splitter device using the improved nickel stamp. And, the insertion loss for eight channels obtained to be from 10.02 dB to 10.91 dB.