基于OFI线偏振光激励等离子体的电子能量分布讨论

在准静态隧道电离理论模型和准经典阈上电离理论模型的基础上 ,建立了一个描述线偏振光场电离电子能量分布的简单模型 ,推导出了既易于理解又相对简单适用的描述线偏振光场的电子能量分布函数解析表达式。数值计算了类硼氮系统的电子能量分布曲线 ,并对计算结果进行了分析。最后与现有实验结果进行比较 ,给出其适用范围。     

园偏振光场电离电子的剩余能量

以准静态隧道电离理论为基础，推导了园偏振光场电离多电子原子体系的剩余电子能量的计算公式，得出一个有趣的结论，在超短脉冲园偏振光场的作用下，平均剩余电子能量只与电离速率和脉冲包络有关。数值模拟表明，平均剩余电子能量大致随激光能量按一次方规律变化。     

强光场的偏振特性对电子能量的影响

在具体给出准静肪理论中描述强激光场中原子电离产生的电子的有质动有和乘余能量的基础上,讨论了激光场的偏振特性对所产生的电子能量的影响,并提出适合偏振度的椭圆偏振光,朋可能更有利于基于光场感生电离电子碰撞机制的Ｘ射线激光的实验。     

激光偏振参量对电离电子能量的影响

以准静态隧道电离理论为基础 ,计算并讨论了不同激光偏振参量对基于光场感生电离电子碰撞机制的系统的电离电子能量的影响 ,结果表明 ,随着偏振参量值的减小 ,在电离时刻的峰值处 ,电离电子的剩余能量反而变大     

氦原子在超短中红外脉冲和极紫外光场作用下的双电离（英文）

利用数值求解含时薛定谔方程的方法研究了氦原子在超短红外激光脉冲和极紫外激光场作用下的双电离过程。在此过程中,一个电子首先被极紫外激光场电离,然后氦离子既可以被接下来的红光激光场直接隧穿电离,也可以被红外激光场驱动下的电子再散射而发生非次序双电离。这两种双电离通道的干涉可以产生新颖的电子关联动量谱分布。当驱动红外激光脉冲为周期量级时,再散射导致的双电离的两个电子的运动方向可以相同,也可以相反。     

非相对论强激光在等离子体中的传播特性

强激光脉冲在完全电离的等离子体中的传输特征是激光与等离子体相互作用的一个热点课题,它对激光驱动的等离子体加速器、Ｘ射线激光器、惯性约束核聚变等都具有重要影响．事实上,在强激光的很多实际应用中,人们希望激光在尽可能长的传播距离内保持足够的强度．例如在激光驱动的等离子体加速器中,电子获得的能量与加速距离成正比,因而尽可能地增加激光的传播距离成为激光加速的关键． 等离子体中电子密度分布决定其折射率,而折射率决定了激光的传播特性．另一方面,由于有质动力的存在,等离子体中的电子密度又受到激光场空间分布的影…     

超短脉冲激光对无机硅材料的损伤

通过控制作用于材料表面的激光能量和脉冲数量,实验研究了800nm,50fs,1kHz激光作用下融石英玻璃和硅片的破坏机制和损伤规律,计算了材料的损伤阈值与脉冲能量以及脉冲数量的依赖关系,并采用简化的理论模型计算了熔石英玻璃材料的损伤阈值与激光脉宽以及光子能量之间的依赖关系。对这两种无机硅材料在飞秒脉冲作用后的微区结构改变进行了扫描电子显微镜(SEM)测试,研究了其形貌特征。结果表明,硅片是由缺陷中的导带电子作为种子电子引发雪崩电离导致材料损伤,而熔石英玻璃是由多光子电离激发出导带电子引发雪崩电离导致材料损伤。     

激光椭偏率对类镍氪系统光场感生电离参数的影响

研究了激光椭偏率对基于光场感生电离(OFI)电子碰撞机制类镍氪(NLK)系统电离参数的影响。计算结果表明,激光椭偏率对NLK系统的电离速率、电离电子剩余能、各电荷态相对集居数随时间的变化以及初始电子能量分布等电离参数的影响较大,圆偏振激光场是实现NLK 32.8 nm X射线激光放大的最佳激励光场。理论计算表明,在圆偏振飞秒激光驱动下,实现NLK 32.8 nm X射线激光放大需要的最低激光强度为3.5×1016W/cm2,最高激光强度为1.6×1017W/cm2,实验估计的激光强度可能在5×1017W/cm2以上。     

超快激光与生物含水组织相互作用

研究了超快脉冲激光与生物组织相互作用的机理 ,建立了生物软组织中激光诱导光学击穿模型 ;结果表明 ,对于纳秒或亚纳秒脉冲激光 ,强吸收介质的热电子发射对电子雪崩电离过程有很大影响 ,等离子体光学击穿阈值随生物组织吸收的增加而降低 ;在激光脉宽为亚皮秒量级时 ,多光子电离成为光学击穿的主要机制 ,介质的击穿阈值几乎与线性吸收系数无关。在达到光学击穿阈值时 ,激光能量沉积在厚度约 1μm的薄层之内 ;随着激光能量显著超过击穿阈值 ,有效的激光透过深度减小。     

飞秒激光器产生等离子体中电子剩余能量的研究

飞秒激光器的出现，使强场中的电离过程由最初的多光子电离和阈上电离，发展为以隧道电离（Tunneling Ionization,TI)或越过垫垒电离（Over-the-Barrier Ionization,OBI)为主要过程的光场感生电离（Optical-Field-Induced Ionization,OFI)。由于等离子参数对电子温度的可控制性，使基于OFI的X射线激光的等离子体特性在很大范围内具有可控制性。文中主要研究不同激光参数（泵浦激光的偏振特性，泵浦激光的波长，激光强度，电离能等）对等离子体中电子剩余能量的影响。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.