Integration of single-electron transistors using field-emission-induced electromigration

A novel technique for the integration of planar-type single-electron transistors (SETs) composed of nanogaps is presented. This technique is based on the electromigration procedure, which is caused by a field emission current. The technique is called "activation." By applying the activation to the nanogaps, SETs can be easily obtained. Furthermore, the charging energy of the SETs can be controlled by adjusting the magnitude of the applied current during the activation process. The integration of two SETs was achieved by passing a field emission current through two series-connected initial nanogaps. The current-voltage (I(D)-V(D)) curves of the simultaneously activated devices exhibited clear electrical-current suppression at a low-bias voltage at 16 K, which is known as the Coulomb blockade. The Coulomb blockade voltage of each device was also obviously modulated by the gate voltage. In addition, the two SETs, which were integrated by the activation procedure, exhibited similar electrical properties, and their charging energy decreased uniformly with increasing the preset current during the activation. These results indicate that the activation procedure allows the simple and easy integration of planar-type SETs.     

Magnetoresistance Properties of Planar-Type Tunnel Junctions With Ferromagnetic Nanogap System Fabricated by Electromigration Method

We report electromigration techniques for the fabrication of planar-type tunnel junctions with ferromagnetic nanogap system. In these techniques, by monitoring the current passing through the devices, we are easily able to obtain the planar-type Ni-Vacuum-Ni tunnel junctions. In this paper, magnetoresistance (MR) properties of the planar-type Ni-based tunnel junctions formed by stepwise feedback-controlled electromigration (SFCE) and field-emission-induced electromigration (activation) are studied. We performed the SFCE method for Ni nanoconstrictions connecting asymmetrical butterfly-shape electrodes. Furthermore, the activation technique was applied to Ni nanogaps with separations of 15-45 nm. MR ratio of the devices formed by the SFCE exhibited approximately 4% at 16 K . On the other hand, the devices fabricated by the activation showed MR ratio of above 300% at 16 K. These results suggest that it is possible to fabricate planar-type ferromagnetic tunnel junctions with vacuum barriers by electromigration techniques.     

Tuning of tunnel resistance of nanogaps by field-emission-induced electromigration using current source mode

A newly investigated technique for the tuning of the tunnel resistance of nanogaps using electromigration method induced by a field emission current is presented to reduce the power consumption during the process. The method is called "activation" and is demonstrated with a current source. Planar-type initial nanogaps of Ni separated by 20-80 nm were defined on SiO2/Si substrates via electron-beam lithography and the lift-off process. Then, a bias current was applied to the initial nanogaps at room temperature, using a current source. The applied current was slowly ramped up until it reached the preset value. As a result, the process time of the current-source-based activation was 16 times shorter than activation using a voltage source. Furthermore, the tunnel resistance of the nanogaps was reduced from 100 T ohms to 70 M ohms by increasing preset current I(s) from 1 nA to 3.5 microA. Regarding the average power required for current-source-based activation, it can be successfully suppressed compared with that of voltage-source-based activation. These results imply that the current source directly and precisely tunes the field emission current passing through the nanogaps, and effectively causes the migration of atoms across the nanogaps, resulting in the successful control of the tunnel resistance of the nanogaps.     

Suspended and localized single nanostructure growth across a nanogap by an electric field

Direct growth of a suspended single nanostructure (SSN) at a specific location is presented. The SSN is grown across a metallic nanoscale gap by migration in air at room temperature. The nanogap is fabricated by industrial standard optical lithography and anisotropic wet chemical silicon etching. A DC current bias, 1 nA, is applied across the metallic gap to induce nanoscale migration of Zn or ZnO. The history of the voltage drop across the gap as a function of time clearly indicates the moment when migration begins. The shape of SSNs grown across the nanogap by the migration is asymmetric at each electrode due to the asymmetric electric field distribution within the nanogap. An SSN can be used as the platform for two-terminal active or passive nanoscale electronics in optoelectronics, radio frequency (RF) resonators, and chemical/biological sensors.     

RT-CW Operation of InGaN multi-quantum-well structure laser diodes

The continuous-wave operation of InGaN multi-quantum-well (MQW) structure laser diodes (LDs) was demonstrated at room temperature with a threshold current of 25 mA, a threshold voltage of 5.8 V, an output power of 30 mW and a high operating temperature of 100°C. The energy differences between the absorption and the emission energy of the InGaN MQW structure LDs were as large as 220 meV at RT. A deep localized state (the localization energy is >100 meV) was formed in the InGaN well layer due to the InGaN phase separation during the growth. Both the spontaneous emission and the stimulated emission of the LDs originated from these deep localized energy states. The far field pattern showed a higher order transverse mode of the entire 5-μm-thick epitaxial layer stack, with air and sapphire as the upper and lower cladding layers, respectively.     

Field emission characteristics of an individual carbon nanotube inside a field emission-scanning electron microscope

Field emission (FE) properties of individual single-walled carbon nanotubes (SWCNT) were investigated inside a field emission-scanning electron microscopy. The individual SWCNT turned on a voltage of 23 V defined to produce a current of 10 pA, and was saturated at around 43 V and 880 nA. The FE characteristic of individual SWCNT also followed a conventional Fowler-Nordheim (F-N) theory in which a single linear slope in the F-N plots is measured below their limit of current level corresponding to the saturation regime of emission current. Energy-dispersive X-ray spectroscopy analysis showed that carbon atoms were deposited on the anode surface by the local heating of SWCNT tip during the FE processes and indicated about atomic 83% of carbon atoms. The carbon atoms were newly found to be evaporated and deposited on the anode surface during the FE process such that it was assumed that the degradation of FE was caused by evaporation and deposition of carbon atoms during the FE process.     

Large Coulomb blockade oscillations at room temperature in ultranarrow wire channel MOSFETs formed by slight oxidation process

We propose a new fabrication technique of room-temperature operating silicon single-electron transistors (SETs). The devices are in the form of ultranarrow wire channel MOSFETs, where a sub-10-nm channel is formed by wet etching and slight thermal oxidation. Large Coulomb blockade (CB) oscillations whose peak-to-valley current ratio at room temperature is as high as 6.8 are observed in the fabricated ultranarrow wire channel MOSFETs. It is found that larger CB oscillations are obtained in the ultranarrow wire channel SETs than in the point-contact channel SETs. It is considered that the potential fluctuations induced during the channel formation processes give rise to multiple-dot SET structures in the ultranarrow wire channel MOSFETs.     

Few electron limit of n-type metal oxide semiconductor single electron transistors

We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 × 20 nm(2) is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a current spin density functional theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronic and quantum variable based devices.     

The spatial distribution and spectral characteristics of field-induced electron emission sites on broad-area high voltage electrodes

Instrumental techniques are described for displaying (a) the spatial distribution of field emission sites on planar high voltage electrodes and (b) the emission current pattern within an individual site. Typically, emission ‘sites‘ are generally composed of three or more ‘sub-sites’ that become temporally unstable at current > 10^?7 A. The electron energy spectra of sub-sites are characteristically single peaked, whose half-widths (FWHM) initially vary linearly with applied field: from changes in spectral area with field, substantially linear sub-site F-N plots have been obtained having β values in the range 300–500.     

Field emission and photo-catalytic investigations on hierarchical nanostructures of copper doped CdS synthesized by kitchen-chemistry approach

We herein report an economical and facile technique for the synthesis of hierarchical nanostructures of Cu doped CdS nanostructures by microwave assisted solvothermal technique using a household microwave oven. We attempted to establish the effect of variation of solvents ratio on the morphological and optical properties of the obtained nanoscale structures. The field emission characteristics of the copper doped CdS nanoarchitecture have been studied and the turn on field is found to be 2.8 V/microm for an emission current density of approximately 0.1 microA/cm2. Emission current stability is determined at the preset current of approximately 1 microA and approximately 10 microA for the stable duration of approximately 4 hrs. The observed field emission results envisage the possibility of using the present emitter in the field emission sources. We believe that this is a unique report on the synthesis as well as field emission studies of copper doped CdS nanostructures. Photocatalytic dye degradation ability of the Cu doped CdS nanostructures is observed to be less than the undoped CdS counterparts.     

Quantum model of space-charge-limited field emission in a nanogap

This paper presents a modified Thomas-Fermi-approximated quantum model for space-charge-limited field emission in a nanogap with metal electrodes, where the image-charge potential (including anode screening), direct tunnelling, space-charge effects and exchange-correlation effects of the tunnelling current are treated in a one-dimensional quantum model. It is found that the traditional Fowler-Nordheim (FN) law (even with the classical model of anode screening) is no longer valid in a nanogap of less than 10?nm. The smooth transition of our proposed model to the traditional FN law extended to large gap spacing is demonstrated. Application of the model to estimate the emission area of an experimental I-V curve in a nanogap is discussed.     

Tunable graphene single electron transistor

We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lateral graphene gates and an additional back gate. The tunneling coupling is a strongly nonmonotonic function of gate voltage indicating the presence of localized states in the barriers. We investigate energy scales for the tunneling gap, the resonances in the constrictions, and for the Coulomb blockade resonances. From Coulomb diamond measurements in different device configurations (i.e., barrier configurations) we extract a charging energy of approximately 3.4 meV and estimate a characteristic energy scale for the constriction resonances of approximately 10 meV.     

Effects of oxidation process on the tunneling barrier structures in room-temperature operating silicon single-electron transistors

We investigate the tunneling barrier structures in the room-temperature operating silicon single-electron transistors (SETs). The devices are fabricated in the form of the point-contact channel metal-oxide-semiconductor field-effect transistors with gate oxide formed by thermal oxidation or low-pressure chemical vapor deposition (LP-CVD). From the gate voltage and temperature dependence of the peak current in the SET characteristics, it is found that the thermal oxidation process leads to higher and narrower tunneling barriers. In some SETs with CVD-deposited gate oxide, thermally activated conduction over the low tunneling barriers is clearly observed in a wide temperature range from 100 K-300 K.     

Electron tunneling measurement of the energy gap in a LaSrCuO superconductor

We have used the break junction technique to determine the energy gap of lanthanum—strontium—copper—oxide, one of the new high critical temperature superconductors. The current—voltage characteristics demonstrated a variety of tunneling behaviours. The best characteristic indicating quasiparticle tunneling between superconducting electrodes implied an energy gap of 7.0 ± 0.1 meV. Derivatives of other characteristics showed weak structure indicating possible energy gaps up to 9 meV.     

Energy spectra of electrons field emitted from a broad area composite cathode of tantalum carbide

Details are given of the field electron emission (FEE) characteristics of a cold cathode consisting of a multi-array of tantalum carbide needles prepared from a directionally solidified eutectic. It is shown that, whilst these needles have similar dimensions, only a small fraction of these potential sources actually contribute to the total emission current. From electron spectroscopy studies it has been established that the characteristic half-width of the emission from individual areas is about ~ 260 meV and that the emission mechanism is based on a semiconductor regime. The Fowler-Nordheim (F-N) plots of the total emission from the cathode and that from small emitter areas are both linear over a wide field range.     

Nanoelectromechanical switch operating by tunneling of an entire C60 molecule

We present a solid state single molecule electronic device where switching between two states with different conductance happens predominantly by tunneling of an entire C60 molecule. This conclusion is based on a novel statistical analysis of approximately 10(5) switching events. The analysis yields (i) the relative contribution of tunneling, current induced heating and thermal fluctuations to the switching mechanism, (ii) the voltage dependent energy barrier (approximately 100-200 meV) separating the two states of the switch and (iii) the switching attempt frequency, omega0, corresponding to a 2.8 meV mode, which is most likely rotational.     

SOI single-electron transistor with low RC delay for logic cells and SET/FET hybrid ICs

We report on a successful fabrication of silicon-based single-electron transistors (SETs) with low RC time constant and their applications to complementary logic cells and SET/field-effect transistor (FET) hybrid integrated circuit. The SETs were fabricated on a silicon-on-insulator (SOI) structure by a pattern-dependent oxidation (PADOX) technique, combined with e-beam lithography. Drain conductances measured at 4.2 K approach large values of the order of microsiemens, exhibiting Coulomb oscillations with peak-to-valley current ratios /spl Gt/1000. Data analysis with a probable mechanism of PADOX yields their intrinsic speeds of /spl sim/ 2 THz, which is within an order of magnitude of the theoretical quantum limit. Incorporating these SETs as basic elements, in-plane side gate-controlled complementary logic cells and SET/FET hybrid integrated circuits were fabricated on an SOI chip. Such an in-plane structure is very efficient in the Si fabrication process, and the side gates adjacent to the electron island could easily control the phase of Coulomb oscillations. The input-output voltage transfer, characteristic of the logic cell, shows an inverting behavior where the output voltage gain is estimated to be about 1.2 at 4.2 K. The SET/FET hybrid integrated circuit consisting of one SET and three FETs yields a high-voltage gain and power amplification with a wide-range output window for driving the next circuit. The small SET input gate voltage of 30 mV is finally converted to 400 mV, corresponding to an amplification ratio of 13.     

Effect of catalyst thickness and plasma pretreatment on the growth of carbon nanotubes and their field emission properties

We demonstrated that the diameter and the density of carbon nanotubes (CNTs) which had a close relation to electric-field-screening effect could be easily changed by the control of catalytic Ni thickness combined with NH3 plasma pretreatment. Since the diameter and the density of CNTs had a tremendous impact on the field-emission characteristics, optimized thickness of catalyst and application of plasma pretreatment greatly improved the emission efficiency of CNTs. In the field emission test using diode-type configuration, well-dispersed thinner CNTs exhibited lower turn-on voltage and higher field enhancement factor than the densely-packed CNTs. A CNT film grown using a plasma-pretreated 25 angstroms-thick Ni catalyst showed excellent field emission characteristics with a very low turn-on field of 1.1 V/microm @ 10 microA/cm2 and a high emission current density of 1.9 mA/cm2 @ 4.0 V/microm, respectively.     

Influence of feedback parameters on resistance control of metal nanowires by stepwise feedback-controlled electromigration

We propose a stepwise feedback-controlled electromigration (SFCE) approach to control the channel resistance of metal nanowires at room temperature. SFCE procedure finely divides a conventional feedback-controlled electromigration (FCE) scheme into several FCE cycles. This approach effectively removes thermal instability caused by large current passing through a metal nanowire, because process time of each FCE cycle can be successfully reduced. Using the SFCE approach, a wide-range control of the channel resistance of Ni nanowires was achieved ranging from the order of 10(2) omega to 10(5) omega at room temperature, without catastrophic breaks of the nanowires. Furthermore, total process time of the SFCE procedure was considerably shortened without degradation of the controllability of the resistance of the nanowires. The channel resistance of a Ni nanowire was precisely controlled from 0.2 to 600 k(omega) for 20 min at room temperature, which is 3000 times larger than the initial resistance of the channel. These results clearly indicate that a wide-range control of the channel resistance of metal nanowires can be achieved with a shortened process time using SFCE scheme.     

Room-temperature single-electron transistors using alkanedithiols

We have fabricated single-electron transistors by alkanedithiol molecular self-assembly. The devices consist of spontaneously formed ultrasmall Au nanoparticles linked by alkanedithiols to nanometer-spaced Au electrodes created by electromigration. The devices reproducibly exhibit addition energies of a few hundred meV, which enables the observation of single-electron tunneling at room temperature. At low temperatures, tunneling through discrete energy levels in the Au nanoparticles is observed, which is accompanied by the excitations of molecular vibrations at large bias voltage.