共查询到20条相似文献,搜索用时 31 毫秒
1.
Kaushik Roy Choudhury Jaewon Lee Neetu Chopra Alok Gupta Xuezhong Jiang Fabrice Amy Franky So 《Advanced functional materials》2009,19(3):491-496
A novel, highly efficient hole injection material based on a conducting polymer polythienothiophene (PTT) doped with poly(perfluoroethylene‐perfluoroethersulfonic acid) (PFFSA) in organic light‐emitting diodes (OLEDs) is demonstrated. Both current–voltage and dark‐injection‐current transient data of hole‐only devices demonstrate high hole‐injection efficiency employing PTT:PFFSA polymers with different organic charge‐transporting materials used in fluorescent and phosphorescent organic light‐emitting diodes. It is further demonstrated that PTT:PFFSA polymer formulations applied as the hole injection layer (HIL) in OLEDs reduce operating voltages and increase brightness significantly. Hole injection from PTT:PFFSA is found to be much more efficient than from typical small molecule HILs such as copper phthalocyanine (CuPc) or polymer HILs such as polyethylene dioxythiophene: polystyrene sulfonate (PEDOT‐PSS). OLED devices employing PTT:PFFSA polymer also demonstrate significantly longer lifetime and more stable operating voltages compared to devices using CuPc. 相似文献
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Solution-processed organic light-emitting devices (OLEDs) still require improvements in their operational lifetime in order for them to become commercially viable. One factor that limits the lifetime of these devices is the instability of the hole injection layer (HIL). Therefore, understanding its degradation mechanism is crucial for the development of more stable solution-processed OLEDs. In this work, we use an archetypal fluorescent OLED in conjunction with an experimental solution-processed HIL in order to elucidate the degradation mechanism in these HILs. Our studies show that degradation is caused by triplet excitons. This new triplet-induced hole injection degradation is expected to be a common phenomenon in OLEDs, and therefore should have important implications for the design of stable HILs. 相似文献
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Low cost, high throughout and large scale production techniques, such as roll-to-roll, printing and doctor blading, boost the favorite of electronic devices with all solution process. While MoOx are conventionally formed via high temperature and vacuum deposition, we develop a novel, lower-temperature, solution-processable MoOx hole injection layer (HIL) and cast successful application in organic light-emitting diodes (OLEDs). The characterization of MoOx is presented in detail using X-ray diffraction, atomic force microscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and impedance spectroscopy measurements. The results show MoOx features amorphous phase structure, superior film morphology and exceptional electronic properties. With solution-processed MoOx as HIL, highly efficient OLED is demonstrated. The luminous efficiency has been enhanced by 56% in comparison with that of the counterpart using evaporated MoOx. The main reasons for the substantially improved performance are the tailored surface work function and appropriate hole injection capacity correspondingly result in optimizing carrier balance in OLED. Our results pave a way for advancing MoOx-based organic electronic devices with solution-processable techniques. 相似文献
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Hole injection layer (HIL) plays a crucial role in governing external quantum efficiency (EQE) of ultraviolet organic light-emitting diodes (UV OLEDs). We develop a solution-processed aqueous composite HIL of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) incorporated MoOx (PEDOT:PSS+MoOx) and cast successful application to UV OLEDs. PEDOT:PSS+MoOx is characterized in detail with scanning electron microscopy, atomic force microscopy, UV–visible absorption spectra, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and impedance spectroscopy measurements. The results show that PEDOT:PSS+MoOx features superior film morphology and exceptional electronic properties such as enhanced surface work function and promoted hole injection capacity. With PEDOT:PSS+MoOx as HIL, the UV OLED gives maximum EQE of 4.4% and radiance of 12.2 mW/cm2 as well as improved durability. The electroluminescence peaks at 376 nm with full width at half maximum of 34 nm and stable voltage-dependent spectra. Our results pave a way for exploring efficient UV OLEDs with solution-processable techniques. 相似文献
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Szuheng Ho Chaoyu Xiang Rui Liu Neetu Chopra Mathew Mathai Franky So 《Organic Electronics》2014,15(10):2513-2517
A new aqueous based polymer, Plexcore® OC AQ1200 (AQ1200) was used as a hole injection layer (HIL) in organic light emitting diodes (OLEDs) and the device results are compared with polyethylene dioxythiophene:polystyrene sulfonate (PEDOT:PSS) in terms of injection efficiency and stability. Dark injection transient measurements show a higher injection efficiency in hole-only devices using AQ1200 HIL compared with PEDOT:PSS. Using AQ1200 as an HIL, high efficiency phosphorescent OLEDs are demonstrated to have a long lifetime, with an estimated operational half lifetime (LT 50) of more than 8000 h from an initial luminance of 1000 cd/m2. 相似文献
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In this paper, we report on the multilayer poly (fluorene) co-polymer red light-emitting devices (PLEDs) fabricated on flexible plastic substrates. An organic hole transport layer (HTL) is inserted between PEDOT:PSS hole injection (HIL) and light-emissive layers (LEL). Since the highest occupied molecular orbital (HOMO) of the HTL is located between those of HIL and LEL, the insertion of HTL reduces the effective HOMO level offset between HIL and LEL, reducing the device operation voltage and producing comparable or better device efficiencies in comparison with the conventional PEDOT:PSS-only devices. Maximum emission efficiency, /spl sim/0.8 cd/A, power efficiency, /spl sim/0.7 lm/W, and external quantum efficiency, /spl sim/1.5%, have been obtained for multilayer red PLEDs. 相似文献
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CuI/CuPc被采用作为有机电致蓝光CBP:BCzVBi器件 的双空穴注入层。采用双空穴注入层后使得CBP:BCzVBi蓝光器件的启亮电压降低至 3.4 V,较采用CuPc单空穴注入层的CBP:BCzVBi蓝光器件低0.4 V。在驱动电流20 mA/cm2的情况下,与单空穴注入层器件 相比,采用该双空穴注入层结构使得器件电流效率提升约19%,亮度 增加约17%,驱动电压降低0.9 V。采用Fowler -Nordheim (F-N)隧穿注入理论对器件空穴注入电流的影响因素进行了分析,发现双空穴 注入层形成的能级台阶可以有效地改善发光器件的空穴注入效率,进而起到改善器件发光电 流效率和降低驱动电压的目的。 相似文献
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Antoniadis H. Miller J.N. Roitman D.B. Cambell I.H. 《Electron Devices, IEEE Transactions on》1997,44(8):1289-1294
In this paper, we examine the effects of hole carrier injection and mobility on both the electroluminescence (EL) quantum efficiency and the operating voltage of bilayer organic light-emitting diodes (OLED's). We find that hole-injection is limited by the nature of the hole injecting interface and significantly affects the operating voltage, but not the quantum efficiency of the OLED. Hole mobility is found not to affect the device quantum efficiency. We demonstrate the characteristics of an ideal ohmic contact by measuring space-charge-limited currents in a trap-free hole transporting polymer layer 相似文献
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量子点发光二极管中载流子注入机理的研究 总被引:1,自引:1,他引:0
针对量子点(QDs)发光二极管(QLED)中载流子注 入不平衡的问题,对载流子的注入机理进行了研 究。在隧穿注入和空间电荷限制电流(SCLC)模型的基础上,仿真分析了空穴和电子在QDs 层的注入情况,制备 了QLED的样品。CdSe/CdS作为QDs层,PEDOT:PSS作为空穴注入层(HIL),TPD作为 空穴传输层(HTL),Alq3作为电子传输层(ETL)。优选的QDs层厚为25nm时,确定了TPD和Alq3的理论最优厚分别为48nm。研究发现, 当驱动电压低于6.5V时,隧穿注入电流在载流子的传输过 程中起主导作用;高于6.5V时,SCLC在载流子的传输过程中起主导 作用。实验结果表明,当 Alq3厚为20nm时,器件发出QDs的红光,随着Alq3厚度的增加, 器件开始出现绿光,实验结果与仿 真结果基本吻合。研究结果对QLED的制备具有理论借鉴意义。 相似文献
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尝试采用三种方式来平衡载流子的浓度,以提高量子点发光二极管(QLED)的外量子效率等性能:在正装结构(ITO/HIL/HTL/QD/ETL/EIL/金属阴极)的QLED的发光层和电子传输层中间插入超薄聚甲基丙烯酸甲脂(PMMA)电子阻挡层;在空穴注入和传输层方面,通过使用更加优化的HIL等来提高空穴注入和传输几率;在QD发光层方面,用短链配体来置换量子点的长链配体以增加载流子向量子点发光层中的传输效率等。在进行量子点配体交换的同时带来了量子点在正交溶剂中的可溶性优势,有利于QLED器件的全溶液法制备。 相似文献
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Y. Divayana X.W. Sun B.J. Chen G.Q. Lo K.R. Sarma D.L. Kwong 《Solid-state electronics》2007,51(11-12):1618
Bandgap engineering by insertion of a hole-blocking layer (HBL) between the hole-injection layer (HIL) and hole-transporting layer (HTL) for green and blue-emitting organic light-emitting device is shown to improve the current efficiency by 30% and 70%, respectively. The improvement was attributed to a better electron–hole balance in the device. Two different organic materials, 2,9-dimethyl-4,7-diphenylphenanthroline and tris-(8-hydroxyqunoline) aluminum were used as HBL. Variation of HBL and HTL thickness was shown to adjust the current efficiency and operating voltage, respectively. Insertion of a thin HBL between HIL and HTL for blue-emitting devices also resulted in appearance of multicolor emission which was used to produce a pure white light. 相似文献
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Solution-processed copper oxide (CuO) thin films are introduced as a hole injection layer (HIL) for quantum dot-based light-emitting diodes (QD-LEDs). AFM, XPS and UPS measurements are utilized for the characterization of the thermally-annealed CuO films. The optimized CuO-based QD-LEDs exhibited an external quantum efficiency (EQE) of 5.37% with a maximum brightness over 70,000 cd/m2. The key parameters including the current efficiency and power efficiency of CuO-based QD-LEDs are comparable to the commonly-used PEDOT:PSS-based QD-LEDs using the same structure, further demonstrating that CuO is an effective hole injection layer for QD-LED applications. 相似文献
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We introduce an organometal halide perovskite (CH3NH3PbI3), as a hole injection layer (HIL) to accelerate hole injection and transport in tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes (OLEDs). The excellent charge mobility of CH3NH3PbI3 along with the better interface contacts induced by the CH3NH3PbI3 HIL improved the charge balance and thus enhanced device performance compared with that of OLEDs without a HIL and with a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) HIL. Maximum luminance of 19110 cd m−2 and power efficiency of 3.210 lm W−1 were obtained. Also, besides more balanced charge recombination, the non-aqueous fabrication of the perovskite HIL and the chemical stability of indium tin oxide in contact with CH3NH3PbI3 led to increased device stability and durability, giving a half-life time as long as 31.7 h. 相似文献
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研究了MoO3修饰氧化石墨烯(GO)作为空穴注入层的影响。采用旋涂的方法制备了GO, 再真空蒸镀修饰层MoO3,得到了空穴注入能力强和透过率高的复合薄膜。MoO3的厚分 别采用0、3、5和8nm。通过优化MoO3的厚度发现,当MoO3的厚为5nm时,复合薄膜 的透过率达到最大值,在 550nm的光波长下透光率为88%,且此时采用 复合薄膜作为空穴注入层制备的结构为 ITO/GO/MoO3(5nm)/NPB(40nm)/Alq3(40nm)/LiF(1nm)/Al(100nm)的有机电致发光器件(OLED)性能 最佳。通过对OLED进一步的优化,改变Alq3的厚度,分别取50、60和70nm,测量其电压 、电流、亮度、色坐标和电致发光(EL)光谱等参数发现,当Alq3的厚为50nm时器件性能最 佳。最终制备了结构为ITO/GO/MoO3(5nm)/NPB(50nm)/Alq3(50nm)/LiF(1nm)/Al(100 nm)的OLED,在电压为10V时,最大电流效率达到5.87cd/A,与GO单独作为空穴注入层制备的器件相比,提高了50%。 相似文献
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为了提高有机电致发光器件OLED的发光效率,引入2T-NATA作为空穴注入层,制备了结构为ITO/2T-NATA(Xnm)/NPB(25nm)/Alq3:C545T(20nm:质量分数4.5%)/Alq3(30nm)/LiF(1nm)/Al(100nm)的绿光器件,其中X为空穴注入层2T-NATA厚度。分析了2T-NATA的蒸镀厚度分别0,5,10,15,20,25,30,35nm时器件的发光性能。结果表明,2T-NATA的HOMO能级较好的与ITO功函数匹配,降低了空穴注入势垒,引入空穴注入层2T-NATA提高了器件的发光亮度和效率。当2T-NATA厚度为15nm时,器件的效果最好,起亮电压只需2.87V,亮度最高达到18000cd/m2,是不引入空穴注入层亮度的5倍多,在12V时发光效率可达11.4cd/A。 相似文献
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Zhi Qiang Gao Ping Fan Xia Pik Kwan Lo Bao Xiu Mi Hoi Lam Tam Man Shing Wong Kok Wai Cheah Chin H. Chen 《Organic Electronics》2009,10(4):666-673
Two novel p-phenylenediamine-substituted fluorenes have been designed and synthesized. Their applications as hole injection materials in organic electroluminescent devices were investigated. These materials show a high glass transition temperature and a good hole-transporting ability. It has been demonstrated that the 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) doped p-phenylene-diamine-substituted fluorenes, in which F4-TCNQ acts as p-type dopant, are highly conducting with a good hole-transporting property. The organic light emitting devices (OLEDs) utilizing these F4-TCNQ-doped materials as a hole injection layer were fabricated and investigated. The pure Alq3-based OLED device shows a current efficiency of 5.2 cd/A at the current density of 20 mA/cm2 and the operation lifetime is 1500 h with driving voltage increasing only about 0.7 mV/h. The device performance and stability of this hole injection material meet the benchmarks for the commercial requirements for OLED materials. 相似文献
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Do-Hong Kim Jin Yeong KimDong-Young Kim Jun Hee HanKyung Cheol Choi 《Organic Electronics》2014,15(11):3183-3190
Organic light-emitting diodes (OLEDs) typically have low out-coupling efficiency. In this paper, a solution-based nanoparticle layer is presented as a nanostructure to enhance the out-coupling efficiency of OLEDs. Silica nanoparticles (NPs) are randomly distributed on indium tin oxide by spin-coating a silica NP solution. By further spin-coating poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) as a hole injection layer, a randomly corrugated PEDOT:PSS layer is fabricated. A nanostructured OLED having the corrugated PEDOT:PSS layer above the NP layer shows enhanced external quantum efficiency and power efficiency because the trapped light of the waveguide and surface plasmon modes is extracted by Bragg diffraction. The nanostructured OLED shows no angular dependence due to the broad periodicities of the corrugation. The simply fabricated and cost-effective silica NP layer nanostructure, which does not require a lithography step, has potential to enhance the efficiency of both white OLED displays and lighting. 相似文献
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High‐Efficiency and Stable Quantum Dot Light‐Emitting Diodes Enabled by a Solution‐Processed Metal‐Doped Nickel Oxide Hole Injection Interfacial Layer
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Fan Cao Haoran Wang Piaoyang Shen Xiaomin Li Yanqiong Zheng Yuequn Shang Jianhua Zhang Zhijun Ning Xuyong Yang 《Advanced functional materials》2017,27(42)
Stabilization is one critical issue that needs to be improved for future application of colloidal quantum dot (QD)‐based light‐emitting diodes (QLEDs). This study reports highly efficient and stable QLEDs based on solution‐processsed, metal‐doped nickel oxide films as hole injection layer (HIL). Several kinds of metal dopants (Li, Mg, and Cu) are introduced to improve the hole injection capability of NiO films. The resulting device with Cu:NiO HIL exhibits superior performance compared to the state‐of‐the‐art poly(3,4‐ethylenedioxythiophene):poly(styrene‐sulfonate) (PEDOT:PSS)‐based QLEDs, with a maximum current efficiency and external quantum efficiency of 45.7 cd A?1 and 10.5%, respectively. These are the highest values reported so far for QLEDs with PEDOT:PSS‐free normal structure. Meanwhile, the resulting QLED shows a half‐life time of 87 h at an initial luminance of 5000 cd m?2, almost fourfold longer than that of the PEDOT:PSS‐based device. 相似文献