半导体量子点中强耦合激子的性质

研究了抛物型半导体量子点中强耦合激子的性质.在有效质量近似下,采用线性组合算符和幺正变换的方法,导出了半导体量子点中重空穴激子的基态能量.在强耦合情况下讨论了量子点半径和受限强度对半导体量子点中激子基态能量的影响.以氯化铊(TlCl)半导体为例进行了数值计算.结果表明:在强耦合情况下,重空穴激子的基态能量随量子点半径的增大而减小,随量子点受限强度的增大而增大.     

半导体量子点中强耦合磁极化子的性质

采用线形组合算符和么正变换研究了磁场对半导体量子点中强耦合磁极化子基态的影响.结果表明,磁极化子束缚能、磁极化子振动频率随有效束缚强度增大而减小,随电子-体纵光学声子耦合强度增大而增大,随磁场强度增大而增大,即均由于半导体量子点的受限和磁场的增大而使量子点的极化加强,因此半导体量子点的极化是不容忽略的.     

半导体量子点中强耦合磁极化子的性质

采用线形组合算符和么正变换研究了磁场对半导体量子点中强耦合磁极化子基态的影响.结果表明,磁极化子束缚能、磁极化子振动频率随有效束缚强度增大而减小,随电子-体纵光学声子耦合强度增大而增大,随磁场强度增大而增大,即均由于半导体量子点的受限和磁场的增大而使量子点的极化加强,因此半导体量子点的极化是不容忽略的     

非对称量子点中强耦合磁极化子的性质

采用线性组合算符和幺正变换方法研究了非对称量子点中强耦合磁极化子的性质。导出了非对称量子点中强耦合磁极化子的振动频率和基态结合能随量子点的横向和纵向有效受限长度、磁场的回旋频率和电子-声子耦合强度的变化关系。数值计算结果表明:非对称量子点中强耦合磁极化子的振动频率和基态结合能随量子点的横向和纵向有效受限长度的减小而迅速增大,表现出奇特的量子尺寸效应。振动频率和基态结合能随回旋频率的增加而增大,随电子-声子耦合强度的增加而增大。     

非对称量子点中强耦合束缚极化子的性质

采用线性组合算符和幺正变换方法研究库仑场对非对称量子点中强耦合极化子性质的影响。导出了非对称量子点中强耦合束缚极化子的振动频率、基态能量和基态结合能随量子点的横向和纵向有效受限长度,库仑束缚势和电子-声子耦合强度的变化关系。数值计算结果表明:非对称量子点中强耦合束缚极化子的振动频率、基态能量和基态结合能随量子点的横向和纵向有效受限长度的减小而迅速增大,表现出新奇的量子点的量子尺寸效应。基态能量随库仑束缚势和电子-声子耦合强度的增加而减小,振动频率和基态结合能随电子-声子耦合强度和库仑束缚势的增加而增大。     

抛物量子阱中强耦合极化子的基态能量计算

采用线性组合算符和幺正变换相结合的变分方法,研究了电子与体纵光学声子强耦合情况下抛物量子阱中极化子的基态能量。给出了抛物量子阱中强耦合极化子的基态能量与量子阱受限强度和电子-体纵光学声子耦合强度的关系。通过数值计算,结果表明:强耦合极化子的基态能量随量子阱受限强度的增大而增大,随电子-体纵光学声子耦合强度的增大而减小。随量子阱受限强度的减小,基态能量趋于晶体材料的结果。抛物量子阱增强了极化子的基态能量。     

量子点中强耦合极化子的性质

采用线性组合算符和么正变换方法研究了抛物量子点中强耦合极化子基态的束缚能和电子周围的光学声子平均数。结果表明，极化子的基态的束缚能和电子周围的光学声子平均数随有效束缚强度增大而减小，随电子-声子耦合强度增大而增大。     

非对称量子点中杂质束缚极化子性质

采用线性组合算符和幺正变换方法,研究磁场对非对称量子点中弱耦合杂质束缚极化子性质的影响。导出了非对称量子点中弱耦合杂质束缚磁极化子振动频率和基态结合能随量子点的横向和纵向受限强度、磁场的回旋共振频率、库仑束缚势和电子-声子耦合强度的变化关系。数值计算结果表明:非对称量子点中弱耦合杂质束缚磁极化子振动频率和基态结合能随量子点的横向和纵向受限强度的增大而迅速增大,表现出奇特的量子尺寸效应。     

磁场和库仑场对量子点中强耦合束缚极化子性质的影响

采用线性组合算符和幺正变换方法研究了磁场和库仑场对半导体量子点中强耦合极化子性质的影响.导出了强耦合束缚磁极化子的振动频率和基态能量与量子点的有效受限长度、库仑束缚势、磁场的回旋共振频率和电子-声子耦合强度的变化关系.数值计算结果表明:强耦合束缚磁极化子的振动频率和基态能量随量子点的有效受限长度的减小而迅速增大,随磁场的回旋共振频率的增加而增大.基态能量随电子-声子耦合强度和库仑束缚势的增加而减少.     

抛物量子点中强耦合束缚磁极化子的温度效应

采用线性组合算符和幺正变换方法研究量子点中强耦合束缚磁极化子性质的温度依赖性,导出了强耦合束缚磁极化子的振动频率、基态能量和声子平均数随温度的变化关系.取RbCl晶体为例进行数值计算,结果表明:强耦合束缚磁极化子的振动频率、基态能量和声子平均数随温度的升高而增大,基态能量随量子点的有效受限强度的增加而增大.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks