高性能In0.53Ga0.47AsPIN光电探测器的研制

报道了采用GSMBE方法研制的In0.53Ga0.47As PIN光电探测器，器件结构中引入了宽禁带InP窗口层和聚酰亚胺钝化工艺，减小了暗电流，提高了器件性能。在反向偏压为5V时器件的暗电流为640pA，反向偏压为10V时测得器件的上升时间为37.2ps，下降时间为30.45ps，半高宽为43.9ps。对影响探测器暗电流的因素和提高响应速度的途径进行了讨论。     

基于黑硅微结构的全硅PIN光电探测器

本文报道了一种基于黑硅微结构的全硅PIN光电探测器。该器件结合了黑硅结构宽光谱高吸收的特性,以及PIN光电探测器高量子效率高响应速度的特点,通过在传统硅PIN光电探测器结构的基础上增加黑硅微结构层,在不影响响应速度的条件下,提高了探测器在近红外波段响应特性。并且针对纵向结构垂直入射PIN光电探测器时量子效率与响应速度相矛盾的问题,提出了解决方案。测试结果表明,该器件的量子效率可达80%,峰值波长为940 nm,光响应度达到0.55 A/W,暗电流降至700 pA,响应时间为200 ns。     

用于生物荧光检测的CMOS 光电探测器设计

在标准CMOS 工艺参数基础上,设计了三种(P /Nwell 型,Nwell/Psub 型和N /Psub 型)光电探测器.通过对光电转换原理的详细分析以及数学模型的建立,理论上比较了三种探测器在灵敏度,暗电流,峰值响应波长等特性的差异,阐述了掺杂浓度,结深等工艺参数对器件性能的影响,并且采用SMIC0.18 μ m CMOS 工艺进行流片验证.测试结果表明,P /Nwell 型结构最大灵敏度为0.08 A/W ,峰值响应波长460 nm ,暗电流55nA/cm 2 ;Nwell/Psub型结构最大灵敏度为0.35 A/W ,峰值响应波长580 nm ,暗电流64 nA/cm 2 ;N /Psub 型结构最大灵敏度为0.29 A/W ,峰值响应波长580 nm ,暗电流600 nA/cm 2 .测试结果表明,所设计的光电探测器性能与理论分析基本一致,在灵敏度,响应波长方面性能突出.     

CCD光电探测器系统对动目标探测极限的研究

CCD光电系统对于运动目标的探测是经常遇到的课題,CCD探测器对运动目标表现出与静止目标不同的特性,本文从理论及实验两方面分析了这一特性。     

纤维状有机光电探测器制备与特性研究

纤维状光电探测器因具有柔性可编织、全角度光探测等特性,有望在可穿戴电子领域取得广泛应用。现已报道的纤维状光电探测器多采用无机光敏材料,器件存在机械柔性受限、制备工艺复杂等问题。本文提出制备纤维状有机光电探测器(FOPD),采用浸渍提拉法依次在锌丝表面制备电子传输层(ZnO)、有机体异质结光敏层(PBDB-T:ITICTh)和空穴传输层(PEDOT:PSS)等功能层,最后缠绕银丝或碳纳米管纤维(CNT)作为外电极,制备了两种柔性FOPD。结果表明,两种器件在可见光波段均具有优良的响应,整流特性明显,在-0.5 V偏压下比探测率均可达10¹¹Jones (300 nm～760 nm)。其中,CNT外电极与光敏层的界面接触更佳,器件具有更低的暗电流密度(9.5×10^-8A cm^-2,-0.5 V)和更快的响应速度(上升、下降时间：0.88 ms、6.00 ms)。本文的研究有望为柔性纤维器件和可穿戴电子领域的发展提供新思路。     

光电感烟探测器散射特性探讨

本文介绍了一种用于火灾报警的散射型光感烟探测器 ,采用OPTEK公司OP2 31和OP80 1SL光电组合套件作为发射管和接收管。文章重点探讨了两管之间角度变化对探测器灵敏度的影响 ,并对光信号引起的光电三极管的输出进行了估算。     

In0.53Ga0.47As/InP(001)薄膜表面重构的研究

通过扫描隧道显微镜(STM)以及反射式高能电子衍射(RHEED)对在不同As4等效束流压强(As4BEP)下生长的In0.53 Ga0.47 As薄膜表面重构进行研究.研究发现在两种As4 BEP条件下,样品表面重构都以(4×3)/(n×3)为主,并存在c(6×4)、β2(2×4)以及α2(2×4)三种重构类型.和低As4 BEP条件相比,高As4 BEP条件下反射式高能电子衍射仪图像更加清晰,高分辨率的STM扫描图片也能够分辨出各种重构类型.对高分辨率的STM扫描图像进行进一步分析得到,随着As4 BEP的升高,β2(2×4)重构类型明显减少,这是由于高As4 BEP减少In偏析,从而抑制β2(2×4)重构的产生.     

激光辐照参数对光导型光电探测器响应的影响

文章针对激光照射下光导型碲镉汞光电探测器的响应特性展开了研究,主要讨论了强激光照射下辐照时间、波长及光功率密度对探测器响应特性的影响.从传统载流子的漂移扩散模型出发,在考虑温度的变化下推导出描述半导体载流子的动态方程,并通过数值模拟,给出了理论上的激光辐照主要参数对探测器电阻及输出电压的影响.结果表明:半导体探测器材料...     

自催化生长GaSb纳米线及其在高性能紫外-可见-近红外光电探测器中的应用（英文）

本文应用镓金属液滴作为催化剂,采用化学气相沉积方法自催化合成了单晶GaSb纳米线.研究表明该GaSb纳米线为典型的p型半导体,霍尔迁移率为>0.042 cm^2V^-1s^-1.硅基和柔性衬底上构筑的基于GaSb纳米线的光电探测器,具有良好的紫外-可见-近红外宽光谱探测性能.硅基器件对500 nm的可见光响应率可达3.86×10^3A W-1,探测率可达3.15×10^13Jones;柔性器件在保持相似光电性能的同时,具有极好的机械柔韧性和稳定性.本文有助于更好地揭示自催化生长的GaSb纳米线的性能,并为进一步设计基于GaSb纳米线的功能光电器件打下了实验基础.     

用于蓝宝石光纤的光电探测器研究

文章设计了一套比色式蓝宝石光纤气流高温传感器系统,光电探测器作为光转换为电信号的连接元件,具有重要的作用。文章在前期对蓝宝石光纤在不同温度下的光谱辐射特性研究的基础上,进一步研究了适用于蓝宝石光纤的光电探测器,同时根据探测器的不同性能,设计了测试方案,最终根据测试结果确定了适合于蓝宝石光纤高温测量应用的光电探测器。     

Radiation damage of In0.53Ga0.47As photodiodes by high energy particles

The performance degradation of In_0.53Ga_0.47As p-i-n photodiodes, subjected to a 220-MeV carbon particle irradiation in the fluence range 10¹⁰ to 10¹³ cm^–2, is reported. It is shown that the increase of the dark current scales roughly with the displacement damage created in the n-type InGaAs region. The degradation of the photo-current, on the other hand, does not scale with the displacement damage, for all irradiations studied. Therefore, it is believed that the photo-current suffers from increased surface recombination, which is related to the ionization damage created in the passivation layer.     

Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers

Heterostructures comprising highly strained GaAs quantum wells in Al_0.48In_0.52As and Ga_0.47In_0.53As layers have been grown by the metalorganic chemical vapor deposition method on InP(100) substrates. The photoluminescence spectra of these structures have been studied, and it is established that GaAs quantum wells form type-I heterojunctions with Al_0.48In_0.52As layers and type-II heterojunctions with Ga_0.47In_0.53As layers.     

High field transport characteristics of minority electrons in p-In0.53Ga0.47As

Measurements of the static current-voltage characteristics of photoexcited minority electrons in p-In_0.53Ga_0.47As are reported. Photoluminescence measurements are also presented. These results are discussed in terms of the theory for high field photoconductivity and the recently reported velocity-field characteristics for minority electrons in In_0.53Ga_0.47As.     

Structural Control of Rashba Spin–Orbit Coupling in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As Quantum Wells

We investigated the correlation between the Rashba spin–orbit coefficient α and potential shape of the quantum wells (QW), where α values are experimentally deduced from the weak antilocalization analysis. We studied the gate I–V properties of the QW samples and have obtained results consistent with the potential shapes predicted for these QWs.     

Electrical characterization of Si+ and Si+/P+ implanted N+P+In0.53Ga0.47As junctions

In this communication, we present I–V and admittance spectroscopy measurements of shallow n⁺p junctions into p-InGaAs made by Si⁺ implantation, including a complete study of the conduction mechanisms as a function of temperature. The effect of P⁺ co-implantation is also analysed. The I–V characteristics of both junctions show that recombination in the space-charge zone is the dominant transport mechanism in forward bias, with ideality factors around 1.5 at 300 K that increase with decreasing temperature of measurement. Activation energies of the reverse saturation current are obtained at room temperature, being 0.5 eV and 0.4 eV for Si⁺ and Si⁺P⁺ implanted diodes, respectively, indicating that recombination currents occur through a near midgap center. Reverse current–voltage measurements show a higher conduction in the P⁺ co-implanted junction due to a higher concentration of traps. In both types of junctions, the reverse characteristics can be fitted to a thermally-activated trap-assisted tunneling mechanism at low bias, involving traps at 0.41 eV and 0.44 eV for Si⁺ and P⁺ co-implanted junctions, respectively, whereas different trap-assisted tunneling processes dominate at medium and high bias. The small signal analysis show a clear difference between the two types of junctions. The use of Kramers–Kronig transforms on the admittance spectroscopy data reveals the presence of a defect level at 0.35 eV in both types of junctions, probably assigned to Zn, the native acceptor present in the p-InGaAs. Another trap level at 0.30 eV is detected at the P⁺ co-implanted junctions, not appearing in the Si doped junctions, which could probably be due to damage produced by the co-implantation.