Li、Mg掺杂ZnO薄膜PL特性研究

采用溶胶-凝胶法在玻璃基片上制备了Li、Mg掺杂的ZnO薄膜,研究了薄膜的光致发光(PL)性能。结果表明,由氧缺位引起的深能级发光峰(450~470 nm)的强度随Li和Mg掺杂量的增加而下降。Mg的添加会使薄膜的带边发射(NBE)增强,而Li的掺杂抑制了NBE峰,同时引发403 nm的Li杂质能级峰,该能级位于价带顶0.29 eV处。     

MO-PPV/ZnSe量子点复合材料的制备及光致发光特性研究

采用水相法制备了颗粒尺寸为3.75nm的硒化锌(ZnSe)量子点,采用表面活性剂将ZnSe量子点转移到有机相聚(2-甲氧基-5-辛氧基)对苯乙炔(MO-PPV)中,获得了MO-PPV/ZnSe复合材料。通过对MO-PPV和ZnSe量子点的吸收光谱(ABS)和光致发光(PL)光谱的研究发现,随着ZnSe量子点掺杂浓度的提高,复合材料的发光强度明显增强,发光峰位置出现了蓝移。当ZnSe∶MO-PPV的质量比为1∶0.181时,发光峰位置蓝移10nm。结果表明,MO-PPV与ZnSe量子点之间存在着能量传递,这是导致MO-PPV/ZnSe量子点复合材料具有PL增强的重要原因。     

Ag掺杂浓度对ZnO纳米花荧光增强的影响

采用水浴与光照相结合的方法制备了Ag/ZnO纳米复 合结构,研究了不同Ag掺杂浓度对 ZnO发光强度的影响。通过X射线衍射(XRD)、扫描电子显微镜(SEM)和光致发光 (PL)光谱对Ag/ZnO纳米复合物的结构、形貌和光学性能进行了研究。SEM表明,由水浴法制 得的ZnO纳米花结构长约1.0μm,直径为200nm左右。XRD结果显示,Ag掺杂后Ag/ZnO 纳米复合结构衍射峰的强度都增强,当掺杂浓度为0.153wt%时,在38.28°出现了Ag₂O的衍射峰。PL表明,Ag浓度极大影响了ZnO紫外发光强度。当Ag的掺杂 浓度为0.051wt% 时,Ag/ZnO纳米复合结构具有最强的紫外发射强度,同未掺杂的ZnO相比,紫外发光强度提 高了11倍。研究结果表明,利用Ag纳米颗粒的局域表面等离子共振(LSPR)特性增强了ZnO纳 米结构的荧光强度,从而提高了荧光检测的灵敏度。     

低压高温退火对Ag掺杂ZnO薄膜性质的影响

采用电子束蒸发在n-Si(100)衬底上沉积Ag掺ZnO(ZnO:Ag)薄膜,随后在200 Pa的O<,2>气氛下分别在500、600、700和800℃退火4 h.用X射线衍射(XRD)仪、荧光光谱仪以及Van der Pauw方法测量ZnO:Ag薄膜的结构和光电学性质.结果表明,ZnO:Ag薄膜为多晶结构,且随着退火...     

量子限制效应对受主跃迁的影响

通过光致发光光谱,研究了量子限制效应对GaAs体材料中均匀掺杂和一系列GaAs/AlAs多量子阱(阱宽范围从30A到200A)中δ-掺杂浅受主杂质铍(Be)原子带间跃迁的影响.实验中所用的样品是利用分子束外延技术生长的均匀掺Be受主的GaAs外延层和一系列在量子阱的中央进行了浅受主Be原子δ-掺杂的GaAs/AlAs多量子阱.在4.2K的低温下,测量了上述样品的光致发光谱,很清楚地观察到了受主束缚激子从基态1S3/2(Γ6)到两个激发态2S3/2(Γ6)和3S3/2(Γ6)的双空穴跃迁.研究发现,随着量子限制效应的增强,受主跃迁能量会增加.对量子限制效应调节受主杂质问跃迁能量的研究,进一步增强了对受主能态可调性的认识,为太赫兹远红外发光器或激光器的研发提供了一种新的途径.     

PbSe量子点掺杂玻璃的制备及表征

采用高温熔融法,经过两步热处理,成功制备了PbSe量子点(QD)掺杂的硅酸盐玻璃.当热处理温度为550℃、热处理时间为1～10 h时,X射线衍射(XRD)和透射电镜(TEM)测量表明,玻璃中,生成的PbSe QD平均尺寸为5～6 nm.随着热处理时间的延长(3～8 h),玻璃中生成的PbSe QD尺寸增大.近红外荧光(...     

Cd掺杂ZnO薄膜的光致发光性能研究

三元半导体Cd掺杂ZnO薄膜通过脉冲激光法沉积 在石英玻璃基底上,Gd含量x从0增加到0.23。X射线衍射(XRD)图谱表明,所有Zn1－xCd xO薄膜都具有c轴取向的六方纤锌矿结构,而且c轴 晶格常数随着 x的增加而增加。原子力显微镜(AFM)观察到,随着x的增加,Zn1－xCdxO 薄膜的晶粒尺寸逐渐减小。光致发光(PL)和透过率 测量都证实,随着x的增加,薄膜的禁带宽度Eg从3.27eV降低到了2.78eV,同时导致了PL峰半高 宽(FWHM)的变大。PL峰迁移到了可见光范围内,使得Zn1－xCdxO薄膜可以应用在可见光发光二极管及其它高效率的光电 子器件。     

Mn掺杂浓度对ZnO纳米薄膜的结构和光致发光的影响

Mn掺杂的ZnO基稀磁半导体材料由于具有独特的特性而受到人们广泛的关注。ZnO的激子束缚能高达60meV,具有优良的光学性质。因此,Mn掺杂的ZnO材料研究在磁性半导体领域广泛开展起来。文章采用溶胶-凝胶法制备了Mn掺杂的ZnO纳米晶,讨论了不同Mn含量对材料结构和光致发光的影响。XRD结果表明,所有的样品均具有六角纤锌矿结构,并且随着引入Mn含量的增加,样品的晶格常数增大。光致发光结果显示,随Mn含量的增加,样品的紫外发光峰先红移后蓝移。光致发光谱也显示,适量的Mn掺杂可以钝化样品的可见区发射,提高样品的光学质量。     

Si中Ge量子点的光致发光

生长温度500℃下，在Si（001）衬底上分子束外延自组织生长锗量子点．700℃退火20分钟后观察到其光致发光．原子力显微镜（AFM）和横截面试样透镜（XTEM）方法用于观察鼻子点的大小和密度．利用喇曼光谱观察不同温度退火引起的Ge与Si之间的互扩散．     

量子阱红外探测器掺杂阱中能级的计算

量子阱中能级位置的确定是获得量子阱红外探测器其它设计参数的基础。为了提供足够的载流子跃迁,阱层一般为重掺杂层。重掺杂使半导体材料禁带宽度变窄,从而改变量子阱中能级的位置。通过对不同温度、量子阱区不同掺杂浓度条件下的量子阱材料PL 谱进行测量,得出PL 谱峰值波长对应的电子跃迁峰值能量,它与阱中基态能级的位置有关。分别计算了考虑和不考虑禁带变窄效应时的电子跃迁峰值能量,并与实验结果相比较,可以看出考虑禁带变窄效应时与实验结果相吻合,因此掺杂量子阱区能级的计算需要考虑禁带变窄效应,这样可以较为精确的得出阱中能级的位置。     

Temperature dependent optical properties of self-organized InAs/GaAs quantum dots

We report photoluminescence (PL), time-resolved PL, and PL excitation experiments on InAs/GaAs quantum dots (QDs) of different size as a function of temperature. The results indicate that both the inhomogeneous properties of the ensemble and the intrinsic properties of single QDs are important in understanding the temperature-dependence of the optical properties. With increasing temperature, excitons are shown to assume a local equilibrium distribution between the localized QD states, whereas the formation of a position-independent Fermi-level is prevented by carrier-loss to the barrier dominating thermally stimulated lateral carrier transfer. The carrier capture rate is found to decrease with increasing temperature and, at room temperature, long escape-limited ground state lifetimes of some 10 ps are estimated. PL spectra excited resonantly in the ground state transition show matching ground state absorption and emission, indicating the intrinsic nature of exciton recombination in the QDs. Finally, the PL excitation spectra are shown to reveal size-selectively the QD absorption, demonstrating the quantum-size effect of the excited state splitting.     

CdSeS量子点的光学非线性特性研究

以Nd:YAG锁模激光器二倍频532 nm的激光作激发光,利用Z-扫描技术研究了CdSeS量子点的光学非线性特性.实验结果表明,CdSeS量子点在532 nm光激发下具有很大的非线性吸收效应,吸收光谱和荧光光谱表明,CdSeS量子点的非线性吸收效应来自于双光子吸收.与已经有报道的量子点相比较发现CdSeS量子点产生双光子吸收效应的阈值为1.36 GW/cm2,非线性折射率达10-8 esu量级,平均双光子吸收截面为25 960GM.CdSeS量子点的这些优异光学非线性特性可使其广泛地应用在生物成像、荧光标记、全光光开关及光限幅等方面.     

Growth and photoluminescence study of ZnSe quantum dots

We report detailed photoluminescence (PL) studies of ZnSe quantum dots grown by controlling the flow duration of the precursors in a metal-organic chemical vapor deposition system. The growth time of the quantum dots determines the amount of blue shift observed in the PL measurements. Blue shift as large as 320 meV was observed, and the emission was found to persist up to room temperature. It is found that changing the flow rate and the total number of quantum dot layers also affect the peak PL energy. The temperature dependence of the peak PL energy follows the Varshni relation. From analyzing the temperature-dependent integrated intensity of the photoluminescence spectra, it is found that the activation energy for the quenching of photoluminescence increases with decreasing quantum dot size, and is identified as the binding energy of the exciton in ZnSe quantum dot.     

Spatially resolved spectroscopy on single self-assembled quantum dots

We report about spatially resolved experiments on self-assembled InGaAs quantum dots. Single quantum dots can be investigated by using STM-induced luminescence spectroscopy. The quantum dot occupancy can be increased via the STM tip current, which results in state filling and therefore in the onset of discrete excited state luminescence. In the limit of low injection currents, a single emission line from the ground state of the dot is observed. Using near-field spectroscopy through shadow masks, we have investigated the optical properties of single self-assembled InGaAs quantum dots as a function of occupancy and magnetic field. This allows us to fully resolve diamagnetic/orbital effects, Zeeman splitting, and to determine manybody-corrections. Photoluminescence excitation spectra further reveal a strong contribution of phonon assisted processes in quantum dot absorption.     

核/壳结构ZnS:Mn/ZnS量子点光发射增强研究

利用水溶性前驱体材料在水性介质中制备了ZnS:Mn和ZnS:Mn/ZnS核/壳结构量子点(QDs,quantum dots),并用X射线衍射(XRD)、光致发光(PL)对ZnS:Mn和ZnS:Mn/ZnS核/壳结构QDs的结构和发光性能进行研究.ZnS:Mn和ZnS:Mn/ZnS QDs XRD谱与标准谱吻合,根据De...     

Optical properties and structure of InAs quantum dots in near-infrared band

The InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are studied as a function of growth temperature at a specific InAs coverage of 2.7 ML. The QDs density is significantly reduced from 8.0 × 1010 to 5.0 × 109 cm-2 as the growth temperature increases from 480℃ to 520℃, while the average QDs diameter and height becomes larger. The effects of the growth temperature on the evolution of bimodal QDs are investigated by combining atomic force microscopy (AFM) and photoluminescence (PL). Results show that the formation of the bimodal QDs depends on the growth temperature: at a growth temperature of 480℃,large QDs result from the small QDs coalition; at a growth temperature of 535℃, the indium desorption and InAs segregation result in the formation of small QDs.     

两步法生长ZnO纳米棒的结构及其发光特性

应用两步法在玻璃衬底上制备了高度取向的ZnO纳米棒,并研究了衬底和反应时间等参数对其结构及发光特性的影响。从样品的扫描电镜(SEM)图中发现,利用脉冲激光沉积(PLD)方法在玻璃衬底上生长一层ZnO薄膜作为修饰层,可以明显提高水热法生长的ZnO纳米棒的结晶质量。样品的SEM和光致发光(PL)谱表明,在有ZnO修饰层的玻璃衬底上生长的ZnO纳米棒分布均匀,排列致密,取向性好;缺陷发光的发光强度约是激子发光峰的2倍,且随着反应时间增长,样品的缺陷发光增强而激子发光减弱。     

高荧光效率深红色硒化镉核壳量子点的制备

采用二次注入镉前驱体的方法,以十八烯(ODE)为 溶剂,通过优化前驱体注入速度、摩尔比等实验条件, 抑制量子点(QDs)生长的奥斯瓦尔德熟化过程,制备出粒径7.5n m以上,发光效率在15%左右的硒化镉(CdSe)QDs 核;通过对制备的QDs核进行包覆,形成了CdSe/ZnCdS的核壳结构;获得了单分散性的荧 光波长大于 660nm且发光效率高达43%的深红光QDs。所制备的QDs有望在生物影 像和植物工厂等领域得到应用。