热力学稳定纳米层状陶瓷--MN+1AXN三元化合物

本文概要地介绍了一种新型热稳定纳米层状陶瓷--MN＋1AXN相的结构、性能和应用前景.MN＋1AXN相为层状六方结构,能导电、导热.其维氏硬度一般在2～5GPa之间,具有良好的抗热震性和低摩擦系数,并且易于加工.温度较高时,在空气中会发生氧化.     

Cu与三元层状化合物复合材料研究现状

现代工业的需求,迫使铜为克服自身缺点而向合金化和弥散增强化发展.铜基复合材料我们早已不陌生,但是各种弥散增强相制成的复合材料有其自身缺点.本文回顾了常见的Cu基增强相以及他们的优缺点比较,简要介绍三元层状化合物Mn+1AXn的组成与结构以及其优异性能,并分别介绍了Ti3SiC2、Ti3AlC2、Ti2AlN Ti2AlC和Ti2SnC它们分别与Cu复合材料的研究进展和展望未来应用前景.     

三元纳米层状化合物Mn+1AXn的性能和应用

综合介绍了一类三元纳米层状化合物Mn 1AXn的结构以及性能。其兼有金属和陶瓷的优良性能,既具有与金属相似的良好的导热性、导电性和加工性能等,同时又有与陶瓷相似的抗氧化性、耐高温和耐腐蚀等特性,还有自润滑性。这种三元纳米层状化合物Mn 1AXn将有着广泛的应用。     

三元层状陶瓷MAX相的非线性弹性研究

(P-M模型)计算MAX相经过一定的应力历史后的应变.     

Ti3SiC2/SiC复相陶瓷的抗氧化性研究

利用热等静压原位合成技术制备了Ti3SiC2/SiC复相陶瓷,对其高温氧化行为进行了研究.结果表明,Ti3SiC2/SiC复相陶瓷在空气中静态氧化时的氧化增重符合抛物线规律,有比纯Ti3SiC2更好的抗氧化性能,并且在1400℃的长时抗氧化性能优于1200℃.     

新型层状陶瓷Ti_3SiC_2的研究进展

新型层状陶瓷Ti3SiC2兼有金属和陶瓷的许多优良性能,具有高的热导率和电导率,易加工,同时具有良好的抗热震性、抗氧化性和高温稳定性。本文从层状陶瓷Ti3SiC2制备方法、结构和性能等方面进行综述,并对其应用前景进行展望。     

新型层状陶瓷Ti3SiC2的研究进展

新型层状陶瓷Ti3SiC2兼有金属和陶瓷的许多优良性能,具有高的热导率和电导率,易加工,同时具有良好的抗热震性、抗氧化性和高温稳定性.本文从层状陶瓷Ti3SiC2制备方法、结构和性能等方面进行综述,并对其应用前景进行展望.     

层状陶瓷Ti3SiC2的研究现状

新型层状陶瓷Ti3SiC2兼有金属和陶瓷的许多优良性能,具有高的热导率和电导率,易加工,同时具有良好的抗热震性、抗氧化性和高温稳定性.在高温结构陶瓷、电极材料、可加工陶瓷材料、自润滑材料等领域的应用有着很好的前景.本文综合评述了Ti3SiC2的性能、制备技术及应用等.     

Ti3SiC2/4SiC复相陶瓷的高温力学性能研究

为了进一步了解Ti3SiC2/nSiC复合材料优良的综合性能,特别是其高温力学性能,本文以热等静压原位合成技术制备的Ti3SiC2/4SiC复相陶瓷为试验材料,对其高温拉伸和高温弯曲行为进行研究。结果表明:Ti3SiC2/4SiC复相陶瓷的高温抗拉强度比室温抗拉强度高;Ti3SiC2/4SiC复相陶瓷的高温抗弯强度在900℃出现一极大值,1000℃后具有好的高温塑性。     

Ti3SiC2层状陶瓷的研究进展

Ti₃SiC₂层状陶瓷兼有金属和陶瓷的许多优良性能,具有高的热导率和电导率,易加工,同时具有良好的抗热震性、抗氧化性和高温稳定性。综合评述了Ti₃SiC₂陶瓷的结构、性能以及制备工艺,并对其在耐火材料行业中的应用前景进行了展望。     

Microstructure and Mechanical Properties of (TiB2 + SiC) Reinforced Ti3SiC2 Composites Synthesized by In Situ Hot Pressing

Fully dense (TiB₂ + SiC) reinforced Ti₃SiC₂ composites with 15 vol% TiB₂ and 0–15 vol% SiC were designed and synthesized by in situ reaction hot pressing. The increase in SiC content promoted densification and significantly inhibited the growth of Ti₃SiC₂ grains. The in situ incorporated TiB₂ and SiC reinforcements showed columnar and equiaxed grains, respectively, providing a strengthening–toughening effect by the synergistic action of particulate reinforcement, grain's pulling out, “self‐reinforcement,” crack deflection, and grain refining. A maximum bending strength of 881 MPa and a fracture toughness of 9.24 MPam^1/2 were obtained at 10 vol% SiC. The Vickers hardness of the composites increased monotonously from 9.6 to 12.5 GPa.     

Fabrication of Ti3SiC2-Ti4SiC3-SiC ceramic composites through carbosilicothermic reduction of TiO2

Dense Ti₃SiC₂-SiC, Ti₄SiC₃-SiC, and Ti₃SiC₂-Ti₄SiC₃-SiC ceramic composites were fabricated through carbosilicothermic reduction of TiO₂ under vacuum, followed by hot pressing of the as-synthesized products under 25 MPa at 1600°C. In the reduction step, SiC either alone or in combination with elemental Si was used as a reductant. A one-third excess of SiC was added in the reaction mixtures in order to ensure the presence of approximately 30 vol.% SiC in the products of synthesis. During the hot pressing step, the samples that contained Ti₃SiC₂ showed better densification compared to those containing Ti₄SiC₃. The obtained composites exhibited the strength properties typical of coarse-grained MAX-phase ceramics. The flexural strength values of 424 and 321 MPa were achieved in Ti₃SiC₂-SiC, and Ti₃SiC₂-Ti₄SiC₃-SiC composites, respectively. The fracture toughness values were 5.7 MPa·m^1/2.     

Al对等离子放电烧结法合成Ti3SiC2的影响研究

以元素为原料，Al为助剂，采用等离子放电烧结(SPS)工艺合成Ti3SiC2块体材料，通过X射线衍射分析和对SPS过程参数的研究表明：适量A1能促进Ti3SiC2的反应合成，提高合成材料的纯度，但Al也会使Ti3SiC2的热稳定性降低。     

Fast seamless joining of SiCw/Ti3SiC2 composite using electric field-assisted sintering technique

A pair of Ti₃SiC₂ reinforced with SiC whiskers (SiC_w/Ti₃SiC₂) composites was successfully joined without any joining materials using electric field-assisted sintering technology at a temperature as low as 1090°C (T_i) and a short time of 30 s. The microstructure and mechanical properties of the obtained SiC_w/Ti₃SiC₂ joints were investigated. The solid-state diffusion was the main joining mechanism, which was facilitated by a relatively high current density (~586 A/cm²) at the joining interface. The shear strength of the sample joined at 1090°C was 51.8 ± 2.9 MPa. The sample joined at 1090°C failed in the matrix rather than at the interface, which confirmed that a sound inter-diffusion bonding was obtained. A rapid and high efficient self-joining process may find application in the case of SiC_w/Ti₃SiC₂ sealing cladding tube and end cap.     

Ti3AC2(A=Si,Al)结构、弹性和电子性质的第一性原理研究

采用第一性原理方法,系统地研究了MAX相材料Ti3AC2(A=Si,Al)的结构、弹性和电子性质.对比LDA和GGA计算结果可知,采用GGA近似得到的结果更接近实验值.计算分析了Ti3AC2(A=Si,Al)的弹性性质,并根据弹性常数证明了其力学稳定性.此外,还从电子态密度和Mulliken布居分析的角度考察了Ti3AC2(A=Si,Al)的电子性质和价键特性,认为其具有共价键、离子键和金属键的综合性质.本文计算结果与文献报道吻合较好.     

Compressive creep of SiC whisker/Ti3SiC2 composites at high temperature in air

The compressive creep of a SiC whisker (SiC_w) reinforced Ti₃SiC₂ MAX phase-based ceramic matrix composites (CMCs) was studied in the temperature range 1100-1300°C in air for a stress range 20-120 MPa. Ti₃SiC₂ containing 0, 10, and 20 vol% of SiC_w was sintered by spark plasma sintering (SPS) for subsequent creep tests. The creep rate of Ti₃SiC₂ decreased by around two orders of magnitude with every additional 10 vol% of SiC_w. The main creep mechanisms of monolithic Ti₃SiC₂ and the 10% CMCs appeared to be the same, whereas for the 20% material, a different mechanism is indicated by changes in stress exponents. The creep rates of 20% composites tend to converge to that of 10% at higher stress. Viscoplastic and viscoelastic creep is believed to be the deformation mechanism for the CMCs, whereas monolithic Ti₃SiC₂ might have undergone only dislocation-based deformation. The rate controlling creep is believed to be dislocation based for all the materials which is also supported by similar activation energies in the range 650-700 kJ/mol.     

纳米粉体Y2O3:Ti3+,Pr3+的光谱性能

采用共沉淀法在氮氢气氛中制备出Y2O3:Ti3+,Pr3+纳米粉体,通过XRD、TEM方法确认了它的晶相与晶粒尺寸,测量了它的激发与发射谱,并与Y2O3:Ti3+纳米粉体的光谱进行了比较。结果显示:共掺Pr3+仅在281nm处产生了激发峰,而在蓝绿光区没有产生激发峰,以致365～480nm的光激发不出Pr3+的特征红荧光。表明:共掺Pr3+的Y2O3:Ti3+用作白光LED荧光粉,难以改善发光性能。     

Electrochemical corrosion behaviors of Ti3SiC2/Cu composites in a 3.5% NaCl solution

The electrochemical corrosion behaviors of Ti₃SiC₂/Cu composite and polycrystalline Ti₃SiC₂ in a 3.5% NaCl medium were investigated by dynamic potential polarization, potentiostat polarization, and electrochemical impedance spectroscopy. The polycrystalline Ti₃SiC₂ was tested on the identical condition as a control. The characterizations of XRD, X-ray photoelectron spectroscopy, scanning electron microscope, and energy-dispersive spectrometer were used to study the relevant passivation behavior and corrosive mechanism. The self-corrosion current density of Ti₃SiC₂/Cu (6.46 × 10⁻⁶ A/cm²) was slightly higher than that of Ti₃SiC₂ (1.64 × 10⁻⁷ A/cm²). Under open circuit potential, the corrosion resistance of Ti₃SiC₂/Cu was better than that of Ti₃SiC₂. Ti₃SiC₂/Cu exhibited a typical passivation feature with a narrow passivation interval and a breakdown phenomenon. The better corrosion resistance of Ti₃SiC₂ was due to the more stable Si layer of the former. In comparison, for Ti₃SiC₂/Cu composites, Cu reacted with the reactive Si layers in Ti₃SiC₂ to form Cu–Si compounds and TiC, destroying the weak interaction between Si layers and Ti–C layers. In the other hand, the as-formed Cu–Si compounds and TiC dissolved during the corrosion of Ti₃SiC₂/Cu in the 3.5% NaCl medium, causing to the destruction of the passivation film on its surface.     

Ti3SiC2基复合材料的研究现状及发展趋势

Ti3SiC2及Ti3SiC2复合材料是材料研究中的热点领域。介绍了Ti3SiC2基复合材料的体系选择、制备技术及其研究现状。指出了进一步研究应该解决的问题和未来的发展前景。最近，作者采用热压烧结工艺制备高纯致密Ti3SiC2/TiB2复合材料。