低相噪体效应二极管的研制

体效应振荡器相位噪声主要取决于体效应管的噪声.文中介绍了低相噪体效应管的设计与工艺实现,制作出了一种与设计基本一致的Ku波段低相噪体效应二极管.该器件在Ku波段高端输出功率大于1 50mW、转换效率大于5%.将其安装于低相噪介质振荡器中,在保证一定的输出功率的情况下,相位噪声小于-98dBc/Hz/5kHz,-10dB谱线宽度小于200Hz.     

X和Ku波段宽带Gunn VCO

<正>用南京电子器件研究所研制的体效应管和变容管的管芯、集总参数元件的谐振电路,制成了变容管调谐体效应振荡器.其衬底小于0.78cm~2.在X波段,一个振荡器频率范围为7.2—12.4GHz,输出功率大于70mW,最大126mW.在Ku波段,一个振荡器频率范围为12.0—18.4GHz,输出功率大于75mW,最大功率137mW.在14.0—18.5GHz,带内最     

X波段高稳定低相位噪声锁相源

<正>卫星高速数字通讯的迅速发展,需要高质量微波源作第一本振.由于数字通讯多采用调相制,所以对本振源的频率稳定度和相位噪声提出了较高的要求.本文介绍采用谐波混频锁相法,由高稳定5MHz晶体振荡器作参考源,用它的高次谐波直接锁定X波段体效应振荡器,获得了高稳定、低相位噪声输出.得到的结果是:频率稳定度10~(-9)/天(-10～+50℃),S/N>35dB(信号与偏离信号10Hz～15kHz内,双边带相位噪声功率之比),输出功率大于30mW,电源杂波干扰-50dB(≤300Hz).     

双耦合跨导增强型低功耗压控振荡器

设计了一种工作于Ku波段和Ka波段的新型电容电感压控振荡器(LC VCO),具有低功耗和低相位噪声的优点。Ku波段的信号由交叉耦合LC VCO产生,在此基础上利用PMOS push-push倍频器结构,将信号频率由Ku波段扩展到Ka波段。采用互补型交叉耦合对结构,通过电流复用技术,提高信号的输出摆幅。同时该结构通过电容分裂技术和栅极漏极阻抗平衡技术,降低了功耗和相位噪声。该双频段VCO芯片基于0.13μm CMOS工艺实现,尺寸为0.88 mm×0.64 mm。测试结果表明,在1.25 V电源电压下,该VCO的功耗为2.25 mW。14.53 GHz时,该VCO在偏移中心频率1 MHz和10 MHz处的输出相位噪声分别为-115.3 dBc/Hz和-134.8 dBc/Hz, 29.08 GHz时的输出相位噪声分别为-109.67 dBc/Hz和-129.23 dBc/Hz。     

C波段微波低相位噪声介质振荡源

介绍了微波低相位噪声介质振荡器的设计方法。就影响介质振荡器相位噪声的因素进行了讨论,从谐振回路有载Q值、有源器件、增益压缩量、电路模式等几个方面提出了降低相位噪声的方法,并给出了一个C波段微波低相噪振荡器的设计实例。测试结果表明:该振荡器工作频率3 900 MH z,输出功率大于10 dBm,相位噪声达到-102 dB c/H z@1 kH z;-128 dB c/H z@10 kH z。     

S波段低相噪振荡器的设计

基于ADS软件仿真,提出了S波段低相噪振荡器的设计方案。该振荡器采用了100MHz低相噪晶体振荡器和倍频链电路的组合,通过三次倍频来实现2GHz的单点频输出,并且在倍频过程中尽量地让相位噪声按照20lgN恶化。实测结果表明,振荡器输出信号的相位噪声在偏移1kHz处可达到-155dBc/Hz,最终输出信功率大于10dBm,谐波抑制大于25dBc。     

L波段低相位噪声压控振荡器

对微波晶体管振荡器的相位噪声进行了分析。为达到压控振荡器的低相位噪声要求,采用了低电平振荡经放大后输出的设计方案。实现的微带压控振荡器工作于L波段. 相对电调带宽大于10％,不加介质谐振器其SSB相位噪声约达到一90dBC/Hz/10kHz;经加放大输出功率达到10mW以上,功率平坦度≤±0.7dB. 在-20～+60℃范围内正常工作,频率温度稳定性为6×10~(-5);本压控振荡器已应用于频率合成器中。     

Ku波段小型化功率介质振荡器的研制

针对小型化条件下,影响介质振荡器输出功率、相位噪声等主要技术指标的因素进行了分析,提出了提高小型化微波功率介质振荡器的输出功率、降低相位噪声和改善器件散热的方法。通过优化电路结构和CAD仿真技术,解决了功率耗散大与盒体模块小、相位噪声要求高和腔体尺寸小这两个主要矛盾,研制出的DRO输出频率为Ku波段点频,输出功率达到了0.5W,工作效率为20%,相位噪声优于-80dBc/Hz@10kHz,体积为34mm×27mm×9mm。研制结果表明,该介质振荡器具有体积小、输出功率高、相位噪声较高等优点,性能可靠,满足系统小型化使用要求。     

75～115GHz相位锁定固态源

介绍了采用体效应管压控振荡器的Ｗ波段相位锁定系统，该系统在紫金山天文台１３．７ｍ毫米波射电望远镜中作为本地振荡器，可复盖７５～１１５ＧＨｚ的频率范围，输出功率大于５ｍｗ．用伺服放大器的输出信号控制体效应振荡器的偏压得到锁定带宽大于１００ＭＨｚ．     

六毫米波段注入锁定振荡器

本文描述一种六毫米波段注入锁定振荡器.该振荡器由耿管振荡器、环行器、锁相参考源组成,耿管振荡器采用背腔式稳频和谐振帽电路结构,输出端经环行器与高稳定度锁相源连接.注锁振荡器的输出功率大于60mW,振荡频率为46.1GHz,偏离载频10kHz处,单边带(SSB)相位噪声≤-71.7dBc/Hz,杂波≤-40dB.     

A Novel SIW-Based Planar W-Band GaAs Gunn Harmonic Oscillator

Based on the substrate integrated waveguide (SIW) technology, a novel W-band low phase noise GaAs Gunn planar harmonic oscillator is developed in this paper. The technique of harmonic extraction from Gunn diodes and SIW resonant cavity structures are discussed in detail. Due to the high quality factor and planar structure of the SIW cavity resonator, the oscillator is characterized by some advantages such as low phase noise, small size, low cost and planar integration. The measured phase noise is −108.56 dBc/Hz at 1 MHz offset and the output power is more than 9 dBm at 94.78 GHz. A 300 MHz of linear tuning range with power fluctuation less than 1.5 dB is observed when the Gunn diode is biased from 4 to 5.3 V.     

Ka-Band Substrate IntegratedWaveguide Gunn Oscillator

Based on the substrate integrated waveguide (SIW) technology, a new type of Ka-band Gunn Diode Oscillator was developed. Main emphasis was placed on SIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode devices have been analyzed. This oscillator performance is characterized by a medium level output power of 15.2 dBm, a low phase noise less than -91.23 dBc/Hz at 100 kHz and frequency excursion 53 MHz over temperature range from 15degC to 70degC. It has some advantages such as planar integration, low cost, small size, good temperature-frequency stability, low phase noise.     

Wide-Band Varactor-Tuned X-Band Gunn Oscillators in Full-Height Waveguide Cavity (Short Papers)

Some results on X-band varactor-tuned Gunn oscillators in a full-height waveguide cavity are presented. It is shown that it is possible to obtain an electronic tuning range of over 1 GHz at X band with an appreciable output power level, which is also nearly constant with frequency. Results of FM noise measurements on one such oscillator are also reported.     

Q-band injection-locked gunn diode oscillator

The configuration and performance of a Q-band injection-locked Gunn oscillator are presented whose outport is connected with a phase-locked reference source by a circulator. The output power of the oscillator is more than 60mW at 46.1GHz. The single-sideband phase noise (SSB) is less than-71.7dBc/Hz offset 10KHz from the carrier, and the spectrum of clutter signal is less than -40dB.     

一种高性能体效应管电调振荡器

本文介绍了一种高性能W波段高频端Gunn振荡器.其基波和二次谐波共用一个波导振荡腔,基波频率低于W波段波导截止频率,机械调节频宽100～115GHz,输出功率大于5mW,最大可达18.5mW,线性电调范围大于250MHz.该振荡器用于三毫米锁相系统和大型毫米波望远境2.6mm波段的锁相本振系统.     

Novel varactor-tuned millimetre-wave Gunn oscillator

A novel design of varactor-tuned millimetre-wave second-harmonic Gunn oscillator is reported in which a varactor is mounted in a secondary cavity resonant at the fundamental frequency of the Gunn diode. This has the advantage that the varactor does not significantly load the Gunn diode at the output second-harmonic frequency, and enables the oscillator to produce the maximum possible output power from the diode while still offering varactor tuning and high Q.     

低相位噪声微波振荡器设计

针对Ka和Ku波段上、下变频装置对微波振荡器低相位噪声和小型化的要求,该文采用单环锁相式频率合成技术完成了微波振荡器的设计,并对锁相环的相位噪声进行了理论计算。分析了鉴相频率、鉴相器灵敏度和环路带宽对锁相环输出相位噪声的影响,根据分析结果对微波振荡器电路参数合理选择,同时兼顾了低相位噪声与小型化的设计要求。测试结果表明,振荡器的相位噪声指标与理论计算一致,各项指标均达到要求,可满足实际工程应用。