Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD

ABSTRACT: GaN-based high-electron mobility transistors (HEMTs) with AlN/GaN super-lattices (SLs) (4 to 10 periods) as barriers were prepared on (0001) sapphire substrates. An innovative method of calculating the concentration of two-dimensional electron gas (2-DEG) was brought up when AlN/GaN SLs were used as barriers. With this method, the energy band structure of AlN/GaN SLs was analyzed, and it was found that the concentration of 2-DEG is related to the thickness of AlN barrier and the thickness of the period; however, it is independent of the total thickness of the AlN/GaN SLs. In addition, we consider that the sheet carrier concentration in every SL period is equivalent and the 2-DEG concentration measured by Hall effect is the average value in one SL period. The calculation result fitted well with the experimental data. So, we proposed that our method can be conveniently applied to calculate the 2-DEG concentration of HEMT with the AlN/GaN SL barrier.     

Diamond Growth on a Si Substrate With Ceramic Interlayers

Deposition of diamond films on Si substrates precoated with a series of ceramic intermediate layers was examined. The interlayers containing SiC, SiN _x , SiCN, TiSiN, and TiAlSiN were prepared by a liquid injection plasma-enhanced chemical vapor deposition (PECVD) method using alkoxide solution precursors. The subsequent diamond synthesis on these coatings was carried out by microwave plasma-assisted CVD (MPCVD) using a H₂–1%CH₄ mixture. A higher nucleation density of diamond was obtained on these intermediate layers than on the as-polished Si wafer, along with a nonuniform surface distribution of diamond. Diamond powder scratching pretreatment of these interlayers enhanced the nucleation density and promoted the formation of fully uniform diamond films. Particularly, nanocrystalline diamond films were directly generated on TiSiN and TiAlSiN layers under an identical deposition condition that had favored the formation of microcrystalline diamond films on Si wafers and the Si(C,N) interlayers. The mechanism for this difference is attributed primarily to a higher amount of residual amorphous carbon in TiSiN and TiAlSiN layers than that inside Si(C,N) layers.     

Microstructure Evolution and Reaction Mechanism of Biomorphous SiSiC Ceramics

Liquid Si infiltration (LSI) of beech wood-derived biocarbon (C_B) templates at 1550°C yields biomorphous SiSiC ceramics with the morphology of the initial biological preform. The biomorphous SiSiC ceramic consists of solidified Si in the cell lumina, polycrystalline β-SiC and residual carbon islands located at the position of former wood cell walls. The evolution of the microstructure during reactive Si melt infiltration was assessed by infiltration experiments at various times and investigated by X-ray diffraction as well as light scanning electron and transmission electron microscopy in combination with elemental analysis by energy-dispersive X-ray spectrometry. Four different stages of the reactive infiltration process could be distinguished, starting with a heterogeneous nucleation of nano-grained SiC on the pore surfaces of the C_B template by a Si vapor phase reaction below the Si melting temperature. After spontaneous Si melt infiltration, a stepwise reaction results in the simultaneous formation of a nano-grained SiC layer and a coarse-grained SiC phase on the inner pore surfaces. Further reaction proceeds slowly by diffusion of the reactants through the formed SiC layer and the microstructure evolution is dominated by dissolution and re-crystallization processes.     

Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs/SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si/i-(Si QDs/SiC multilayers)/p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency (PCE) of 6.28%.

PACS

81.07.Ta; 78.67.Pt; 88.40.jj     

Environment-friendly deposition of SiCN interlayer for reinforcing carbon fibers in C/SiC composites

Several C/SiC composites with no interlayer, single pyrocarbon (PyC) interlayer and PyC/SiCN interlayer were fabricated by polymer infiltration and pyrolysis process. The microstructure and mechanical properties were investigated. The results verified that SiCN interlayer was formed on carbon fibers. Both bulk density and flexural stress of C/SiC composite with PyC/SiCN interlayer were slightly higher than composite fabricated with single PyC interlayer. When the weight fraction of SiCN interlayer in the composite was about 18 wt%, the flexural stress of the composite was enhanced to 416 MPa from 352 MPa for composite with single PyC interlayer. The observations of pulled-out fibers on fracture surfaces revealed non-catastrophic fracture features for PyC/SiCN deposited C/SiC composite.     

Luminescence properties of terbium-doped SiCN thin films by rf magnetron reactive sputtering

Terbium-doped SiCN (SiCN:Tb) thin films were deposited by rf magnetron reactive sputtering at 800 °C. The as-prepared samples were characterized by XRD, FTIR, and XPS. The results showed that SiCN:Tb films mainly contained both SiC and Si₃N₄ nano-compositions with complicated chemical bond networks. Photoluminescence measurements indicated that the undoped SiCN films exhibited a blue-green light emission, while SiCN:Tb films emitted a strong green one. The SiC nanocrystallites formed in the undoped SiCN films might be responsible for the blue-green light emission, while the formed quaternary Si-C-Tb-O compositions in the doped samples could account for the strong green PL behaviors.     

Oxidation Behavior of a Fully Dense Polymer-Derived Amorphous Silicon Carbonitride Ceramic

The oxidation behavior of a polymer-derived amorphous silicon carbonitride (SiCN) ceramic was studied at temperature range of 900°–1200°C using fully dense samples, which were obtained using a novel pressure-assisted pyrolysis technique. The oxidation kinetics was investigated by measuring the thickness of oxide layers. The data were found to fit a typical parabolic kinetics. The measured oxidation rate constant and activation energy of the SiCN are close to those of CVD and single-crystal SiC. The results suggest that the oxidation mechanism of the SiCN is the same as that of SiC: oxygen diffusion through a silica layer.     

Substrate effects on the strain relaxation in GaN/AlN short-period superlattices

ABSTRACT: We present a comparative study of the strain relaxation of GaN/AlN short-period superlattices (SLs) grown on two different III-nitride substrates introducing different amounts of compensating strain into the films. We grow by plasma-assisted molecular beam epitaxy (0001)-oriented SLs on a GaN buffer deposited on GaN(thick)-on-sapphire template and on AlN(thin)-on-sapphire template. The ex-situ analysis of strain, crack formation, dislocation density, and microstructure of the SL layers has established that the mechanism of strain relaxation in these structures depends on the residual strain in substrate and is determined mainly by the lattice mismatch between layers. For growth on the AlN film, the compensating strain introduced by this film on the layer prevented cracking; however, the densities of surface pits and dislocations were increased as compared with growth on the GaN template. Three-dimensional growth of the GaN cap layer in samples with pseudomorphly grown SLs on the AlN template is observed. At the same time, two-dimensional step-flow growth of the cap layer was observed for structures with non-pseudomorphly grown SLs on the GaN template with a significant density of large cracks appearing on the surface. The growth mode of the GaN cap layer is predefined by relaxation degree of top SL layers.     

Production of new types of sophorolipids by Candida batistae

Sophorolipids (SLs) are glycolipid biosurfactants abundantly produced from different feedstocks by yeasts, and have been widely developed for various applications. In this study, we searched for novel SLs, aiming to broaden the functions and application range. As a result of screening based on the phylogenetic information of a known SL producer, we found that Candida batistae CBS 8550 produces new types of SLs. Interestingly, the present product mainly constituted acid-form SLs (more than 60% of the total SLs), considerably different from conventional SLs that mainly constitute lactone-form ones. In the shake-flask culture with glucose and olive oil as the carbon sources, the yeast produced 6 g/L of SLs after 3 days cultivation. The critical micelle concentrations of the present SL product and isolated acid-form SL (GL-A) were 366 and 138 mg/L, respectively, while those of conventional SLs and isolated acid-form SL were 17 and 95 mg/L, respectively. From these results, the phylogenetic approach should lead to the discovery of new biosurfactant producers, and the yeast product possessing high hydrophilicity may facilitate a broad range of applications for SLs.     

The role of SiC as a diffusion barrier in the formation of graphene on Si(111)

In this paper, we investigate the role of SiC as a diffusion barrier for Si in the formation of graphene on Si(111) via direct deposition of solid-state carbon atoms in ultra-high vacuum. Therefore, various thicknesses of the SiC layer preformed on the Si substrates were produced in order to evaluate its influence on the quality of graphene formation at different substrate temperatures from 900 °C to 1100 °C. At a given temperature of 1100 °C, we found that a thicker SiC layer can suppress silicon-out diffusion from the substrate and improve the structural quality of the graphene layer. The samples were analyzed by low energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, and scanning tunneling microscopy.     

Porous SiC/SiCN composite ceramics fabricated by foaming and reaction sintering

Porous SiC/SiCN composite ceramics with heterogeneous pore structure and rod-like SiCN grains were fabricated by foaming and reaction sintering. The mixture slurry containing SiC and silicon as raw materials, cornstarch as binder, Y₂O₃ as sintering additive and an electrosteric dispersant was stirred with foams derived from pre-foaming using foaming agent. The casted green body was sintered at 1650 °C under nitrogen atmosphere. The results demonstrated that the porous SiC/SiCN ceramics exhibited hierarchical vias ranging from 1 μm to 1 mm and the rod-like crystalline SiCN grains generated in the SiC matrix.     

Evaluation of preparation and combustion rig tests of an effusive cooled SiC/SiCN panel

SiC/SiCN ceramic matrix composites (CMCs) are promising candidates for components of aero-engines. To evaluate the properties of these CMCs under realistic conditions, a quasi-flat panel with effusion cooling holes was investigated in a high pressure combustor rig. A Tyranno SA3 fabric-based SiC/SiCN composite with high strength and strain to failure was manufactured via polymer infiltration and pyrolysis process. Due to its weak matrix no fiber coating was necessary for damage tolerant behavior. The cooling holes in the panel were introduced via laser drilling. An outer coating of CVD-based SiC was finally applied for enhanced oxidation resistance. The specimen was tested in the combustor rig and the cooling effectiveness was evaluated. The microstructure of laser machined holes was studied via microscopy and energy-dispersive X-ray spectroscopy. The macrostructure was investigated via computing tomography scans before and after the combustor test. Material performances at higher temperatures were estimated via a material performance index. Local microstructure modifications were observed after laser drilling. No crack formation was observed in the CMC panels after rig tests. The measured global cooling effectiveness of 0.76 and the analytical performance evaluation demonstrate the potential benefit of SiC/SiCN materials in combustor applications.     

Characterization of Silicon Carbide–Silicon Nitride Composite Ultrafine Particles Synthesized Using a CO2 Laser by Silicon-29 Magic Angle Spinning NMR and ESR

The structure of silicon carbide–silicon nitride (SiC–Si₃N₄) composite particles synthesized using a CO₂ laser was studied by magic angle spinning nuclear magnetic resonance (MAS-NMR) and electron spin resonance (ESR). The structure around Si atoms changed by introducing N. C atoms around Si were substituted by N atoms, and N-rich configurations around Si atoms increased stepwise as the N content increased. The low N content composite particles consisted of mainly SiC phase containing dissolved N. N atoms were partly present in β-SiC microcrystal and partly in the grain boundary layer in the particle. N atoms were tetrahedrally surrounded by four Si atoms in β-SiC microcrystal and were trivalent state bonded to three Si atoms in the grain boundary layer. The high N content particles consisted of SiC, Si₃N₄, and amorphous phases, whose amount depended on N content.     

Prevention of SiC-fiber decomposition via integration of a buffer layer in ZrB2-based ultra-high temperature ceramics

A ZrB₂-based ceramic, containing short Hi-Nicalon SiC fibers, was fabricated with a Mo-impermeable buffer layer sandwiched between bulk and the outermost oxidation resistant ZrB₂–MoSi₂ layer, in order to prevent inward Mo diffusion and associated fiber degradation reactions. This additional layer consisted of ZrB₂ doped with either Si₃N₄ or with the polymer-derived ceramics (PDCs) SiCN and SiHfBCN. Scanning electron microscopy imaging and elemental mapping via energy-dispersive X-ray spectroscopy showed that this tailored sample geometry provides an effective diffusion barrier to prevent the SiC fibers from deterioration due to reactions with Mo or Mo-compounds. In contrast, the structure of the SiC fibers in a reference sample without buffer layer is strongly degraded by MoSi₂ diffusion into the fiber core. The comparison of the three buffer-layer systems showed a moderate alteration of the fiber structure in the case of Si₃N₄ addition, whereas in the PDC-doped samples hardly any structural change within the fibers was observed. A stepwise reaction mechanism is deduced, based on the continuous progression of a reaction zone that propagates toward the ZrB₂–MoSi₂ top layer. The progression of such a reaction zone as a consequence of the different eutectic melts forming in the different layers, that is, first in the SiC-fiber-containing bulk, then in the buffer layer itself, and finally in the top layer at high temperature, allows for an effective separation of the ZrB₂–MoSi₂ top layer from the SiC fibers. Subsequent oxidation at 1500°C and 1650°C for 15 min did not affect the efficiency of all three buffer layers, since no structural changes regarding buffer layer and fibers were observed, as compared to the non-oxidized samples.     

Sphingolipid Players in Multiple Sclerosis: Their Influence on the Initiation and Course of the Disease

Sphingolipids (SLs) play a significant role in the nervous system, as major components of the myelin sheath, contributors to lipid raft formation that organize intracellular processes, as well as active mediators of transport, signaling and the survival of neurons and glial cells. Alterations in SL metabolism and content are observed in the course of central nervous system diseases, including multiple sclerosis (MS). In this review, we summarize the current evidence from studies on SLs (particularly gangliosides), which may shed new light upon processes underlying the MS background. The relevant aspects of these studies include alterations of the SL profile in MS, the role of antibodies against SLs and complexes of SL-ligand-invariant NKT cells in the autoimmune response as the core pathomechanism in MS. The contribution of lipid-raft-associated SLs and SL-laden extracellular vesicles to the disease etiology is also discussed. These findings may have diagnostic implications, with SLs and anti-SL antibodies as potential markers of MS activity and progression. Intriguing prospects of novel therapeutic options in MS are associated with SL potential for myelin repair and neuroprotective effects, which have not been yet addressed by the available treatment strategies. Overall, all these concepts are promising and encourage the further development of SL-based studies in the field of MS.     

Enhanced EMW absorption properties of SiCN/Fe/Ni ceramics modified with Fe/Ni bimetal

The SiCN/Fe/Ni ceramics codoped with iron acetylacetonate (FA) and nickle acetylacetonate (NA) was synthesized by polymer-derived ceramics (PDCs) method in this study. The microstructure, phase composition and electromagnetic wave (EMW) absorption properties of the samples were analyzed. The polarization loss and conduction loss of materials were analyzed by the direct current (DC) multimeter and the contribution rate of polarization loss was more than 94% in the whole frequency band. The results showed that C, SiC, Fe₂Si, Ni₃Si, γ- (Fe, Ni) and CNTs were formed after pyrolysis which provided lots of heterogeneous interface and enhanced the interfacial polarization. Meanwhile, Ni could enter the lattice of Fe and formed a unique electronic configuration, which reinforced the conductivity and stability of Fe. In addition, the in-situ generated Fe₂Si and Ni₃Si provided magnetic loss and conduction loss. The RL_min value of SiCN/Fe/Ni-3 ceramic was ?52.06 dB at 1.54 mm and the effective absorption band (EAB, RL ≤ ?10 dB) reached 4.21 GHz (13.79–18 GHz, 1.43 mm).     

Silicon Nitride/Silicon Carbide Nanocomposite Materials: I, Fabrication and Mechanical Properties at Room Temperature

The fabrication of dense Si₃N₄/SiC nanocomposite materials that contained 2.5-30 wt% SiC via gas-pressure sintering and hot pressing was investigated. The SiC particles originated from admixed commercial SiC powders, SiCN powders produced by plasma synthesis, in situ reaction pyrolysis of carbon-coated Si₃N₄ particles, and pyrolysis of a polycarbosilazane-based SiCN precursor. Based on thermodynamic calculations, criteria for minimum liquid-phase decomposition during sintering were developed. The best sintering results were obtained for sintering cycles that observed this criteria. Materials that contained plasma-synthesized SiCN exhibited high strengths (835-995 MPa) and fracture toughness values (7.4-7.8 MPam^1/2) at room temperature. Post-sintering thermal treatments led to a strength reduction.     

Structure and Mechanical Properties of Copper/Niobium Multilayers

Copper/niobium multilayers prepared by sputtering onto Si substrates with layer thicknesses ranging from 11 to 5000 have been characterized by transmission electron microscopy and nanoindentation. The films are strongly textured with {110} close-packed planes of the bcc Nb parallel to the {111} close-packed planes of the fcc Cu and close-packed directions tending to be parallel as well. For the 11 layers, the Cu is found to grow pseudomorphically on Nb in the bcc structure. It is thought that, for thicker layers, the bcc Cu loses coherency and transforms martensitically to the fcc phase, thus resulting in the observed KurdjumovSachs orientation relationship. As the layer thickness, d , decreases from 5000 to 500, the hardness increases as d ^−1/2; i.e., it follows a HallPetch relationship so that hardening is due to grain boundaries and interfaces. The slope is the same as in pure Cu, but there is a large intercept which is ascribed to internal stresses and a large dislocation density. As the layer thickness decreases from 100 to 11, the hardness increases as (1/ d ) ℓn (0.69 d ), which is a line tension formulation such as would be expected for Orowan dislocation bowing between the layers. Again there is a large intercept which is ascribed to cutting through the Cu/Nb interfaces. The interfacial energy is calculated to be 0.46 J/m².     

Microstructure and ablation behaviors of a novel gradient C/C-ZrC-SiC composite fabricated by an improved reactive melt infiltration

An improved reactive melt infiltration (RMI) route using Zr, Si tablet as infiltrant was developed in order to obtain high-performance and low-cost C/C-ZrC-SiC composite with well defined structure. Two other RMI routes using Zr, Si mixed powders and alloy were also performed for comparison. Effects of different infiltration routes on the microstructure and ablation behavior were investigated. Results showed that C/C-ZrC-SiC composite prepared by Zr, Si tablets developed a dense gradient microstructure that content of ZrC ceramic increased gradually along the infiltration direction, while that of SiC ceramic decreased. Composites prepared by Zr, Si mixed powders and alloy showed a homogeneous microstructure containing more SiC ceramic. In addition, two interface patterns were observed at the carbon/ceramic interfaces: continuous SiC layer and ZrC, SiC mixed layers. It should be due to the arising of stable Si molten pool in the tablet. Among all as-prepared samples, after exposing to the oxyacetylene flame for 60 s at 2500 °C, C/C-ZrC-SiC composite infiltrated by Zr, Si tablet exhibited the best ablation property owing to its unique gradient structure.     

The role of an SiC interlayer at a graphite–silicon liquid interface in the solution growth of SiC crystals

SiC crystal growth using the top seeded solution growth (TSSG) method involves the precipitation of solid SiC from carbon that is dissolved in a silicon melt. The growth rate of SiC is strongly influenced by the solubility of C in liquid Si, which is quite low. In this study, the dissolution of C from graphite to the Si melt was explored by observing the formation of an SiC interlayer at a graphite – Si liquid interface. The SiC interlayer was observed to become thickened during the several hours needed to reach a certain thickness at 1500 °C. Assuming that the SiC interlayer is a direct C source, a pre-formed SiC layer was coated on the graphite crucible to evaluate its effect on the concentration of C in the Si melt. As a result, the concentration of C in the Si melt increased within a short time, especially at low temperatures. By applying the SiC coated crucible to the TSSG process for SiC crystal growth, we confirmed that the development of a pre-formed SiC layer enhanced the growth rate of SiC crystals, especially at the initial stage of crystal growth at low temperatures.