TD-SCDMA网络建设与创新

TD-SCDMA是我国拥有自主知识产权的第三代移动通信同际标准02009年,中国移动已经基本建设了覆盖伞国主要城市的TD-SCDMA网络并实现了良好运营.本文描述了TD-SCDMA网络发展现状,重点分析了在TD-SCDMA网络建设中的主要创新性的做法,提出了TD-SCDMA未来发展的一些建议.     

TD-SCDMA网络建设与创新

TD-SCDMA是我国拥有自主知识产权的第三代移动通信国际标准。2009年,中国移动已经基本建设了覆盖全国主要城市的TD-SCDMA网络并实现了良好运营。本文描述了TD-SCDMA网络发展现状,重点分析了在TD-SCDMA网络建设中的主要创新性的做法,提出了TD-SCDMA未来发展的一些建议。     

TD-SCDMA室内覆盖全面解决方案

大唐移动针对3G建设中室内业务增加带来的挑战,提出了基于TD-SCDMA技术的3G室内覆盖全面解决方案.该方案可以为TD-SCDMA网络的运营商提供一站式服务,能够使运营商在3G网络建设初期迅速地以低成本、高容量的网络开展室内区域的TD-SCDMA网络建设,从而在争夺用户市场上占得先机.     

由TD-SCDMA的现网数据预测TD-LTE网络的主要指标

通过分析TD-LTE网络规划的主要指标参数,结合LTE工程建设中与TD-SCDMA共址建设的实际情况,提出了基于TD-SCDMA的网络数据,预测分析了TD-LTE的网络覆盖和质量,可指导TD-LTE的规划布局,提升TD-LTE网络建设质量。     

提高TD-SCDMA分流GSM负荷能力的方法研究

随着中国移动TD-SCDMA网络的建设,TD-SCDMA网络有效分担GSM网络话务的工作成为检验TD-SCDMA网络建设的一个重要内容。TD-SCDMA基站建设主要在市区,为此,张家口移动以QC小组活动形式对市区的TD-SCDMA基站从分流GSM负荷方面进行优化调整。     

TD-SCDMA无线网络覆盖解决方案

介绍了由无线接入网络(RAN)组成的TD-SCDMA网络拓扑结构和由大唐移动开发的基于TD-SCDMA标准的基站产品及其特点,介绍了各种典型的网络组网应用场景及其特点,并针对这些场景,提出了相应、灵活的组网覆盖解决方案.结论是大唐移动TD-SCDMA产品及其方案在未来中国TD-SCDMA网络的建设中有广阔的市场前景.     

三重因素保障TD-SCDMA网络建设顺利实施

2008年,中国移动以"义不容辞、责无旁贷"的态度推动TD-SCDMA的网络建设.中国移动在北京、广州、深圳等地继续进行TD-SCDMA试验网一期工程基站补点建设工作,使得这些地区的TD-SCDMA网络覆盖程度已与现有GSM网络基本等同,成功实现了TD-SCDMA业务服务北京奥运会的承诺.但中国移动在TD-SCDMA网络建设过程中也面临着基站选址困难、网络设备供货不及时、网络建设工期延长等问题.     

智能天线建网现场扫描

厂家供货能力不断提升 2007年,我国TD-SCDMA系统网络建设开始启动,由中国移动、中国电信、中国网通三大运营商在国内10城市建网,参加此次网络建设的系统设备商主要有大唐、中兴通讯、鼎桥和普天等.由于在网络建设初期,运营商不可能对系统设备进行拆包购买.智能天线作为TD-SCDMA系统设备之一,目前的销售渠道主要是TD-SCDMA系统设备商.目前,国内外智能天线厂家主要有通宇、京信、安德鲁、盛路等.     

TD-SCDMA网络优化

TD-SCDMA作为3G移动通信系统的主流标准之一,是我国提出并得到国际电信联盟(ITU)批准的,一直受到了我国政府的大力支持.近三年来,随着网络终端问题的解决和试验网的顺利实施,TD-SCDMA商用在即,其无线网络的规划和优化工作越来越重要.对于运营商来说,提高网络质量将成为进一步提高网络竞争力的前提和关键因素.作为TD-SCDMA网络运营过程的一个重要环节,网络优化扮演着举足轻重的角色.本文档介绍了TD-SCDMA网络优化的步骤和方法,例如单站优化、多站优化、系统参数优化等,可以为运营商的建设单位、维护单位从事TD-SCDMA网络优化工作提供了一点参考.     

基于TD-SCDMA建设方式利弊分析基础上的政府决策研究

文章针对TD-SCDMA作为我国3G网络主要标准的两种不同建设方案这个热点问题,首先定义了TD-SCDMA单独组网和混合组网的基本概念,接着分析了两种方式各自的利弊,然后结合上述分析对政府决策进行了分析,最后对政府决策提出了建议.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.