共查询到20条相似文献,搜索用时 15 毫秒
1.
Matthias Krause Laurent Bedel Anthony Taupeau Ulrich Kreissig Frans Munnik Gintautas Abrasonis Andreas Kolitsch Gyrgy Radnoczi Zsolt Czigny Annick Vanhulsel 《Thin solid films》2009,518(1):77-83
BCxNy thin films deposited at 250 °C by pulsed reactive magnetron sputtering of a B4C target in an Ar/N2 plasma were studied by elastic recoil detection analysis, Fourier transform infrared, Raman, and photoelectron spectroscopy, electron microscopy, and nanoindentation. In the concentration range of 6% to 100% N2 in the sputter plasma the segregation into nanocrystalline hexagonal boron nitride and amorphous sp2 carbon is the dominant process during the film growth. The stoichiometric ratio and structural details of the major phases depend on the N2 concentration in the plasma and have significant influence on the Young′s modulus and the elastic recovery of the BCxNy thin films. 相似文献
2.
Cd1 − xZnxTe films were prepared by radio frequency (r.f.) magnetron sputtering from Cd0.9Zn0.1Te slices target with different sputtering power (60-120 W). The effects of sputtering power on the properties of Cd1 − xZnxTe films were studied using X-ray diffraction (XRD), energy dispersive X-ray (EDX), atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. The composition of the deposited films was determined by EDX. The Cd content was found always to be higher than the Te content, regardless of sputtering power. This behavior may be explained by the preferential sputtering of cadmium atoms in the target. XRD studies suggest that ZnTe secondary phases were coexisted in Cd1 − xZnxTe films. The origin of the secondary phase is ascribed to the lowest sticking coefficient of Zn atom. AFM micrographs show that the grain size increases with the sputtering power. The optical transmission data indicate that shallow absorption edge occurs in the range of 750-850 nm, and the sputtering power does not have a clear effect on the optical absorption coefficient. In Hall Effect measurements, the sheet resistivities of the deposited films are 1.988 × 108, 8.134 × 107, 8.088 × 107 and 3.069 × 107 Ω/sq, respectively, which increase with the increasing of sputtering power. 相似文献
3.
Hidetoshi Miyazaki 《Vacuum》2008,83(2):416-418
YbAl3 single-phase bulk alloy was synthesized by melting at 1258 K using raw Yb and Al metals in the ratio of 1:2.2. A sputtering YbAl3 target was prepared using the precursor YbAl3 bulk alloy with the spark plasma sintering process. An amorphous Yb-Al film was fabricated by RF magnetron sputtering using the YbAl3 target, and a single-phase crystalline YbAl3 film was fabricated by annealing the amorphous Yb-Al film at temperatures higher than 923 K in Ar atmosphere. 相似文献
4.
Nanocrystalline zirconia thin films have been deposited on borosilicate glass substrates at ambient temperature by direct current (dc) magnetron sputtering. The present study demonstrates the possibility of growing zirconium oxide films in 100% pure oxygen dc plasma. Films of thickness of the order of 500 nm have been grown using a metallic Zr target in pure oxygen plasma. Interestingly, the presence of high temperature polymorphs of ZrO2 is observed in films deposited with 40, 60 and 80% oxygen in the sputtering gas, while only the monoclinic phase is observed at lower and higher oxygen percentages. The refractive index in this range of oxygen percentages peaks at 1.85 in the dispersion free region. The crystallite size in the films varies between 11-25 nm, as calculated from X-ray diffraction patterns and is dependent on oxygen percentage in the sputtering gas. The grain sizes observed in atomic force microscope images are in the range 38 to 45 nm. The dielectric constants of the films, measured at microwave frequencies [8-12 GHz] ranged between 13-19.2. 相似文献
5.
Highly conducting and transparent thin films of tungsten-doped ZnO (ZnO:W) were prepared on glass substrates by direct current (DC) magnetron sputtering at low temperature. The effect of film thickness on the structural, electrical and optical properties of ZnO:W films was investigated. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The electrical resistivity first decreases with film thickness, and then increases with further increase in film thickness. The lowest resistivity achieved was 6.97 × 10−4 Ω cm for a thickness of 332 nm with a Hall mobility of 6.7 cm2 V−1 s−1 and a carrier concentration of 1.35 × 1021 cm−3. However, the average transmittance of the films does not change much with an increase in film thickness, and all the deposited films show a high transmittance of approximately 90% in the visible range. 相似文献
6.
Nanoindentation studies have been carried out for TiB2 films deposited on Si, glass and steel by sputtering for studying the influence of the substrates. It was observed that the modulus of the film was influenced by the substrates from 30 nm onwards. Plastic energy analysis has shown that as load increases more energy is absorbed by the substrate. Quantitative indentation depth limits for obtaining film only hardness, using a combination of log-log plot of load vs displacement and load vs (displacement)2 functions, have shown the dependence on the threshold load for crack formation. Comparison of the hardness data with composite hardness models has been performed. Fracture toughness of the coatings was also evaluated using two methods which resulted in comparable results. 相似文献
7.
We report on photo-fixation of SO2 onto nanostructured TiO2 thin films prepared by reactive DC magnetron sputtering. The films were exposed to 50 ppm SO2 gas mixed in synthetic air and illuminated with UV light at 298 and 473 K. The evolution of the adsorbed SOx species was monitored by in situ Fourier transform infrared specular reflection spectroscopy. Significant photo-fixation occurred only in the presence of UV illumination. The SO2 uptake was dramatically enhanced at elevated temperatures and then produced strongly bonded surface-coordinated SOx complexes. The total SOx uptake is consistent with Langmuir adsorption kinetics. The sulfur doping at saturation was estimated from X-ray photoelectron spectroscopy to be ~ 2.2 at.% at 473 K. These films were pale yellowish and had an optical absorption coefficient being ~ 3 times higher than in undoped film. The S-doped films exhibit interesting oleophobic properties, exemplified by the poor adherence of stearic acid. Our results suggest a new method for sulfur doping of TiO2 to achieve combined anti-grease and photocatalytic properties. 相似文献
8.
ZnO:Al network films were grown on nanochannel Al2O3 substrates at 300 K by direct current magnetron sputtering with an oblique target. The film thicknesses are 60 nm, 160 nm and 190 nm. The holes of the network films diminish with increasing film thickness. For the 60-nm thick film, the network is formed by connecting grains. For the 160-nm and 190-nm thick films, however, the network is formed by connecting granules. The granules consist of many small grains. All the network films have a wurtzite structure. The 60-nm and 160-nm thick network films mainly have a [1 0 1] orientation in the film growth direction while the 190-nm thick network film grows with a random crystallographic orientation. A temperature dependence of the resistance within 160–300 K reveals that the network films exhibit a semiconducting behavior and their carrier transport mechanism is thermally activated band conduction. Room temperature photoluminescence spectra for wavelengths between 300 nm and 700 nm reveal a violet emission centered at 405 nm for the 60-nm thick network film and a blue emission centered at 470 nm for both the 160-nm and the 190-nm thick network films. Annealing decreases the resistivity of the network film. 相似文献
9.
L.J. Li H. Deng L.P. Dai J.J. Chen Q.L. Yuan Y. Li 《Materials Research Bulletin》2008,43(6):1456-1462
Al-doped ZnO films were deposited by RF magnetron sputtering. From the X-ray diffraction and scanning electron spectrometer studies, wurtzite structure with (0 0 2) orientation ZnO thin films were obtained at Al concentration below 15 atomic percent (at.%). As the Al concentration above 15 at.%, the thin films did not fully crystallize. Two new emission peaks occurred at 351 nm and 313 nm when the Al doping above 15 at.% from the photoluminescence spectrum, and the peaks shift towards the shorter wavelengths with increasing the Al concentration. X-ray photonic spectra of O 1s conformed the amount of oxygen captured by Al3+ increasing as the Al3+ concentration increasing due to the dominant Al3+ possess high charge in competition with Zn2+ in the matrix of ZnO. 相似文献
10.
ZrO2 thin films were deposited onto Si wafers and glass slides by reactive rf magnetron sputtering with varying conditions of substrate temperature (Ts). Structural analysis was carried out using high-resolution transmission electron microscopy (HRTEM) and atomic force microscopy (AFM). The scaling behavior of the AFM topographical profiles was analyzed using one-dimensional power spectral density method (1DPSD). Morphological and structural evolution of ZrO2 films have been studied in relation to Ts. With substrate temperatures ranging from RT to 550 °C, the structural transition of the films is a-ZrO2 (below 250 °C) → m-ZrO2 with a little a-ZrO2 (450 °C) → m-ZrO2 with a little t-ZrO2 (550 °C). The roughness exponent α is 1.53 ± 0.02, 1.04 ± 0.01, 1.06 ± 0.05, 1.20 ± 0.03 for ZrO2 thin films deposited at RT, 250 °C, 450 °C, and 550 °C, respectively. Quantitative surface characterization by spatially resolved 1DPSD analyses identified three different growth mechanisms of surface morphology for ZrO2 thin films deposited at RT, 250∼450 °C and 550 °C. The evolution and interactions of surface roughness and microstructure are discussed in terms of surface diffusion, grain growth, and flux shadowing mechanisms. 相似文献
11.
The Cu2O thin films were prepared on quartz substrate by reactive direct current magnetron sputtering. The influences of oxygen partial pressure and gas flow rate on the structures and properties of deposited films were investigated. Varying oxygen partial pressure leads to the synthesis of Cu2O, Cu4O3 and CuO with different microstructures. At a constant oxygen partial pressure of 6.6 × 10− 2 Pa, the single Cu2O films can be obtained when the gas flow rate is below 80 sccm. The as-deposited Cu2O thin films have a very high absorption in the visible region resulting in the visible-light induced photocatalytic activity. 相似文献
12.
Yu Xu 《Materials Letters》2008,62(20):3600-3602
Bismuth ferric oxide (BiFeO3) films grown on quartz substrate were prepared by a simple chemical solution deposition. Phase constitution characterization of the films were obtained by X-ray diffraction, surface morphology and transmittance of the films were studied by atomic force microscopy and ultraviolet-visible-infrared light spectrophotometer. The optical constants (refractive index n, extinction coefficient k) were calculated by straightforward method proposed by Swanepoel [Swanepoel R, J. Phys., E J. Sci. Instrum. 1983; 16: 1214-1222. [1]]. The influence of the processing parameters on microstructure and optical properties, especially band gap, were studied. 相似文献
13.
Nanocrystalline SnO2 and Au:SnO2 thin films prepared by direct current magnetron reactive sputtering
Nanocrystalline pure and gold doped SnO2(Au:SnO2) films were prepared on unheated glass substrates by dc magnetron reactive sputtering and, subsequently, the as deposited films were annealed in air. The films structure, surface morphology, photoluminescence, electrical and optical properties were investigated. After annealing the as deposited SnO2 films, crystallinity increased and the surface roughness decreased. The intensity of PL peaks increases sharply with the annealing temperature. The optical transmittance of the films was around 89% after annealing the as deposited SnO2 films at 450 °C. The as deposited Au:SnO2 films show better crystallinity than the as deposited SnO2 films, the average grain size was around 4.4 nm. The emission peaks of Au:SnO2 films are slightly blue shifted as compare to undoped SnO2 films. The Au:SnO2 films show the lowest electrical resistivity of 0.001 Ωcm with optical transmittance of 76%, after annealing at 450 °C. 相似文献
14.
Deposition of Mn3CuNy thin films on single crystal Si (1 0 0) at various substrate temperatures (Tsub) by facing target magnetron sputtering is reported. The crystal structure and composition were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The results confirmed that the crystalline antiperovskite Mn3CuNy thin film with (2 0 0) highly preferred texture had been obtained at Tsub = 180 °C. Furthermore, for the resulting Mn3CuNy thin film, it showed different properties compared with the bulk counterpart. There was a paramagnetic to ferrimagnetic transition at 225 K with decreasing temperature. The change of the lattice constant with temperature presented positive thermal expansion behavior and no structural transition was observed. The average linear thermal expansion coefficient (α) is 2.49 × 10−5 K−1 from 123 K to 298 K. More interestingly, the temperature dependence of resistivity displayed a semiconductor-like behavior, i.e. an obvious monotonous decrease of resistivity with increasing temperature. 相似文献
15.
磁控反应溅射制备的Ta2O5薄膜的光学与介电性能 总被引:1,自引:0,他引:1
采用直流磁控反应溅射技术,在不同的Ar/O2比条件下制备了系列Ta2O5薄膜样品,采用紫外.可见光透射光谱和椭偏光谱测试分析技术,研究了Ta2O5薄膜在可见光范围内的透射率、折射率和消光系数;同时还采用HP 4192A阻抗分析仪测试分析了样品在500Hz~13MHz频段的介电谱,结果表明在300~700nm的可见光波长范围内,氧化钽薄膜的消光系数k→0,折射率>2.0,透射率大约80%。500Hz下的低频介电常数5的典型值为20.1。损耗角正切tgδ为19.9。 相似文献
16.
Effects of deposition parameters on tantalum films deposited by direct current magnetron sputtering 总被引:1,自引:0,他引:1
Effects of deposition parameters on tantalum films deposited by direct current magnetron sputtering were studied. The results indicated that the electrical properties were relative to the oxygen and other impurities rather than to growth orientation. As the sputtering power increases from 25 to 100 W, the preferred-growth orientation of Ta films changes from (200) to (202) and the oxygen and impurities content in the films decrease. The temperature coefficient of resistance also reduces from −289.79 to −116.65 ppm/°C. The O/Ta ratio decrease and grain size reduction related to a change of electrical resistivity were observed at substrate temperatures in the range 300-500 °C. At 650 °C, partial stable α-Ta associated with a sharp decrease of the electrical resistivity was also found. 相似文献
17.
Influence of annealing temperature on the properties of ZnO:Zr films deposited by direct current magnetron sputtering 总被引:1,自引:0,他引:1
Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) films were deposited on quartz substrates by direct current (DC) magnetron sputtering at room temperature. The influence of post-annealing temperature on the structural, morphological, electrical and optical properties of ZnO:Zr films were investigated. When annealing temperature increases from room temperature to 573 K, the resistivity decreases obviously due to an improvement of the crystallinity. However, with further increase in annealing temperature, the crystallinity deteriorates leading to an increase in resistivity. The films annealed at the optimum annealing temperature of 573 K in vacuum have the lowest resistivity of 9.8 × 10−4 Ω cm and a high transmittance of above 92% in the visible range. 相似文献
18.
ZrO2 films were deposited by reactive gas flow sputtering (GFS) where voltage is applied to a cyindrical hollow-cathode target from a DC source, the discharge being produced at relatively high sputtering pressure. In this system, secondary electrons form a major component of the total current flow and lead to heating of the substrate which in turn has an effect on the properties of deposited films. The present experiments were carried out under the following conditions: Ar gas flow rate of 200 sccm, O2 flow rate FO2 in the range between 0.003 and 1 sccm, and sputtering power (PS) in the range of 50-800 W. The reults showed that the crystal structure of the films deposited for PS below 200 W was monoclinic but for PS above 400 W, the films included tetragonal cystals of stable structure formed at high temperature by the electron bombardment. The films were formed with grains of 20-100 nm in diameter in a porous structure. The mechanical properties of the films were determined by a nanoindentation technique. Martens hardness (HM) of the porous films was found to be in the range between 220 and 330 MPa which is substantially less than that of films typically deposited by rf magnetron sputtering. 相似文献
19.
In microwave tunable devices, one of the major challenges encountered is the simultaneous minimization of the material's dielectric loss and maximization of dielectric tunability. In this work, Ba0.6Sr0.4TiO3 thin film with the thickness of 300 nm was deposited on Pt/SiO2/Si substrates using radio-frequency magnetron sputtering technique, and its dielectric properties were investigated. Due to the high temperature annealing process at substrate temperature of 600 °C, well-crystallized Ba0.6Sr0.4TiO3 film was deposited. The dielectric constant and dielectric loss of the film at 100 kHz are 300 and 0.033, respectively. Due to the good crystallinity of the Ba0.6Sr0.4TiO3 films deposited by radio-frequency magnetron sputtering, high dielectric tunability up to 38.3% is achieved at a low voltage of 4.5 V. 相似文献
20.
BaxSr1−xTiO3 (BST) films are fabricated by sol-gel and RF (radio frequency) magnetron sputtering method. A buffer layer with columnar grains by sol-gel method is introduced to improve the dielectric anomaly in BST films. We find that the presence of buffer layer can increase the differential dielectric constant against temperature in sol-gel derived BST films while not so with sputtered films. We explain this by an ‘expanded layer thickness model’ and an unstable crystallized surface, respectively. The obtained (dε/ε) dT is up to 6% around 11 °C by the sol-gel method. 相似文献