静电纺丝法制备不同形貌的纳米SnO_2及其甲醛气敏特性的研究

采用静电纺丝法,分别选取不同的有机溶剂PVP,PMMA,制备了SnO2的有机物纳米纤维。在600℃温度下退火后,得到不同形貌的SnO2纳米材料(SnO2纳米纤维和SnO2纳米颗粒)。分别通过XRD,SEM,TEM,BET等表征方法对材料的微结构进行了表征,并分别制备了基于SnO2纳米纤维和SnO2纳米颗粒的气敏元件,测试了这些元件对(0.5~50)×10-6的甲醛气体的敏感性能。测试结果表明,在(0.5~50)×10-6甲醛浓度范围内,SnO2纳米颗粒气敏元件比SnO2纳米纤维气敏元件表现出更低的工作温度、更高的响应灵敏度和略长的响应及恢复时间。两种元件都对甲醛表现出良好的选择性。最后,分析了SnO2纳米材料对甲醛的吸附机理。     

纺丝法制备多级SnO2纳米纤维及其气敏特性研究

为了提高SnO2的气敏性能,以PVP为有机溶剂,采用静电纺丝法制备了多级结构的SnO2纳米纤维,利用XRD,SEM和TEM等技术对材料的结构、形貌进行了表征,并制备了SnO2旁热式气敏元件.采用静态气体测试系统对SnO2元件进行了气敏测试.在工作温度300℃时,对0.5~50 ppm甲醛进行了气敏测试.测试结果表明:SnO2气敏元件对甲醛气体具有优异的响应灵敏度,快速的响应及响应恢复特性、较好的选择性.采用静电纺丝制备的多级结构SnO2纳米纤维对甲醛表现出良好的气敏特性.     

Fe掺杂NiO纳米花状微球的制备及其气敏性能研究

采用水热法成功制备了Fe掺杂NiO纳米花状微球,研究了Fe掺杂量对微球结构、形貌和气敏性能的影响。气敏实验结果表明:Fe掺杂NiO纳米微球基气敏元件对丙酮的气敏性能较纯相NiO显著提高;当Fe掺杂量为0.03g时,气敏器件在工作温度为280℃,丙酮质量浓度为3.7×10~(-4) mg/L条件下,气体灵敏度为41.8,是相同条件下未掺杂NiO基气敏元件的12倍,该气敏元件在检测低浓度丙酮气体时也表现出优异的性能。     

Al_2O_3掺杂ZnO微米花对丙酮超高灵敏度和优异选择性

利用水热合成技术,成功制备具有孔道的纯ZnO微米花和Al_2O_3掺杂的ZnO(Al_2O_3-ZnO)微米花。通过X射线衍射(XRD)、扫描电镜(SEM)、电子能谱(EDS)对样品的形貌和结构进行表征。利用所得的纯ZnO和Al_2O_3-ZnO样品制备气敏元件,并对其气敏特性进行研究。结果表明:在工作温度为260℃时,基于Al_2O_3-ZnO的气敏元件对100×10~(-6)的丙酮气体的灵敏度约为82.8,约为同条件下基于纯ZnO的气敏元件对丙酮气体灵敏度(18.0)的4.6倍,其响应时间和恢复时间分别为3s和8s,是同条件下干扰气体中灵敏度最高的乙醇气体的灵敏度(26.2)的3.16倍,该元件具有优异的选择性,能成功区分具有相似性质的丙酮和乙醇。此外,Al_2O_3-ZnO器件可检测到0.25×10-6的丙酮气体,其灵敏度约为3.1。     

纳米SnO2、ZnO及ZnO／SnO2复合材料的气敏性能研究

以ZnO、S如纳米颗粒及ZnO／SnO2复合纳米材料分别作为气敏基料制成旁热式气敏元件,运用扫描电镜观察产物的形貌,用静态配气法对浓度为100ppm的甲烷气体进行气敏性能的测试。结果表明,这几类元件的最佳工作温度及灵敏度差异较大,当工作温度为350℃时SnO2纳米颗粒的气敏性能最佳。此温度下,SnO2响应时间和恢复时间也比纯ZnO纳米颗粒分别缩短了2S和3S。     

铟掺杂纳米SnO_2的合成及气敏性能研究

采用一步水热法制备出了掺杂铟和未掺杂的球花状SnO2纳米结构。通过扫描电子显微镜(SEM)、X射线粉末衍射(XRD)等手段对所得样品的形貌及晶体结构进行了表征,结果表明制得的SnO2纳米结构由厚度约30nm的纳米片组成,晶型为四方金红石型。以掺杂铟和未掺杂的SnO2样品制作了旁热式气敏元件,用于测试样品对乙醇气体的气敏性能。测试结果显示铟的掺入提高了SnO2样品的灵敏度,同时降低了气敏元件的最佳工作温度。最后,提出了铟掺杂提升SnO2纳米材料的气敏性能的可能机制。     

SnO2(0.9)-Fe2O3(0.1)气敏材料的制备及气敏特性的研究

采用柠檬酸盐法制备SnO2(0.9)-Fe2O3(0.1)粉体材料.XRD结构分析表明,在750℃焙烧温度下制得的粉体材料中铁原子大部分进入SnO2晶格中,以SnO2(0.9)-Fe2O3(0.1)固溶体状态存在.采用750℃焙烧温度下制得的SnO2(0.9)-Fe2O3(0.1)固溶体为基体材料,制作旁热式气敏元件并考察其气敏特性.结果表明此类元件对乙醇、一氧化碳等还原性气体具有较高的灵敏度.同时元件长期稳定性良好,100天内元件阻值及灵敏度变化很小.     

TiO2基有机气体敏感元件的制备及性能研究

将多种金属氧化物掺入TiO2中,通过传统的陶瓷气敏传感器制备技术,制作了旁热式烧结型传感器,研究了这些传感器对有机挥发性气体(VOCs)的敏感特性。在不同浓度的甲醛、苯、丙酮和乙醇气氛中,测试了传感器的气敏特性。测试结果表明,添加In2O3、Cr2O3或SnO2能提高传感器对苯的灵敏度,添加In2O3或Cr2O3能提高传感器对丙酮的灵敏度,添加Cr2O3或SnO2的元件对甲醛气体较灵敏。此外,本文还研究了传感器陶瓷的烧结温度对传感器气敏特性的影响。     

Cd2SnO4水热制备及其气敏性能研究

以SnCl4.5H2O、CdCl2·1/2H2O和NaOH为原料,采用水热法制备了Cd2SnO4粒子。通过XRD和SEM对其物相和形貌进行了分析,并将其制成气敏元件,进行气敏性能测试。结果表明制得的Cd2SnO4粒子为多面体,对乙醇、丙酮和三乙胺有较高的灵敏度和好的响应-恢复特性。     

少量氧化锡掺杂提高三氧化钨探测H2S气体的气敏性能

为改善WO3基敏感材料的气敏性能,先采用液相还原法制备得到WO3粉体,再通过微波辅助液相法制备了SnO2掺杂量为0.5%、1%、3%、5%、10%(质量分数,下同)的SnO2-WO3复合材料。采用XRD和SEM对材料的物相、形貌进行了表征,并研究了掺杂SnO2对WO3气敏性能的影响。结果表明,掺杂3%的SnO2可显著提高WO3对H2S的灵敏度和选择性,在工作温度为160℃时,元件对体积浓度为10×10-6 H2S的灵敏度达65,对体积浓度为50×10-6 H2S的灵敏度高达169,且灵敏度与气体浓度呈现良好的线性关系。此外,纯WO3和SnO2(3%)-WO3材料在相对湿度RH=22%～64%时有良好的抗湿性。     

Effect of the composition on the bandgap width of high-κ MexTiyOz (Me = Hf, Ta, Sr) layers

To explore the possibility of bandgap engineering in Ti-oxide based insulators, we investigated the effect of added cations of another kind (Hf, Ta, Sr) on the optical absorption and photoconductivity of thin titanate films. A bandgap of 3.1-3.4 eV, typical for pure polycrystalline TiO₂, was found in crystallized Sr_xTi_yO_z of different composition as well as in amorphous Ta₂Ti₃O_z. By contrast, the gap width of Hf titanates increases starting from 3.5 eV for 30% Hf/(Hf + Ti) to 4.2 eV for 84% Hf/(Hf + Ti). We suggest that this gap widening is associated with reduced interaction between electron states of neighboring Ti cations as influenced by a wide-gap (E_g = 5.6 eV) HfO₂ sub-network.     

Chemical control of superconducting properties of (Y, Ca)(Sr, Ba)2Cu2.7Ga0.3O7?δ

The partial substitution of Ga at the Cu(1) (chain) sites of the YBa₂Cu₃O₇ structure allows synthesis at ambient pressure of Ba-free analogs, e.g., YSr₂Cu_2.7Ga_0.3O_7– . Materials with this composition have been found to be nonsuperconducting, but superconductivity has been induced by one or more of the following methods: Ca substitutions at the Y site; Ba substitutions at the Sr site; annealing in high-pressure oxygen. The influence of these chemical manipulations onT _c has been monitored and all methods have been found to enhanceT _c . The electronic effects of Ba substitutions have been deduced indirectly using powder neutron diffraction, and such substitutions appear to result in a redistribution of hole density into the Cu(1) sites from the superconducting CuO₂ planes.     

Two-gap superconductivity in R2Fe3Si5 (R=Lu,Sc) and Sc5Ir4Si10

Abstract

R₂Fe₃Si₅ (R= Sc, Y, Lu) contains nonmagnetic iron and has a relatively high superconducting transition temperature T_c among iron-containing superconductors. An anomalous temperature dependence of specific heat C(T) has been reported for polycrystalline samples down to 1 K. We have grown R₂Fe₃Si₅ single crystals, confirmed the anomalous C(T) dependence, and found a second drop in specific heat below 1 K. In Lu₂Fe₃Si₅, we can reproduce C(T) below T_c, assuming two distinct energy gaps 2Δ ₁/k_BT_c = 4.4 and 2Δ ₂/k_BT_c = 1.1, with nearly equal weights, indicating that Lu₂Fe₃Si₅ is a two-gap superconductor similar to MgB₂. Hall coefficient measurements and band structure calculation also support the multiband contributions to the normal-state properties. The specific heat in the Sc₂Fe₃Si₅ single crystals also shows the two-gap feature. R₅Ir₄Si₁₀ (R = Sc, rare earth) is also a superconductor where competition between superconductivity and the charge-density wave is known for rare earths but not for Sc. We have performed detailed specific heat measurements on Sc₅Ir₄Si₁₀ single crystals and found that C(T) deviates slightly from the behavior expected for weak-coupling superconductors. C(T) for these superconductors can also be reproduced well by assuming two superconducting gaps.     

Two-gap superconductivity in R2Fe3Si5 (R=Lu,Sc) and Sc5Ir4Si10

R₂Fe₃Si₅ (R= Sc, Y, Lu) contains nonmagnetic iron and has a relatively high superconducting transition temperature T_c among iron-containing superconductors. An anomalous temperature dependence of specific heat C(T) has been reported for polycrystalline samples down to 1 K. We have grown R₂Fe₃Si₅ single crystals, confirmed the anomalous C(T) dependence, and found a second drop in specific heat below 1 K. In Lu₂Fe₃Si₅, we can reproduce C(T) below T_c, assuming two distinct energy gaps 2Δ ₁/k_BT_c = 4.4 and 2Δ ₂/k_BT_c = 1.1, with nearly equal weights, indicating that Lu₂Fe₃Si₅ is a two-gap superconductor similar to MgB₂. Hall coefficient measurements and band structure calculation also support the multiband contributions to the normal-state properties. The specific heat in the Sc₂Fe₃Si₅ single crystals also shows the two-gap feature. R₅Ir₄Si₁₀ (R = Sc, rare earth) is also a superconductor where competition between superconductivity and the charge-density wave is known for rare earths but not for Sc. We have performed detailed specific heat measurements on Sc₅Ir₄Si₁₀ single crystals and found that C(T) deviates slightly from the behavior expected for weak-coupling superconductors. C(T) for these superconductors can also be reproduced well by assuming two superconducting gaps.     

Some thermodynamic aspects of the high-temperature transition in doped V2O3

Measurements of the entropy change are reported for the high-temperature metal-insulator (MI) transitions in the (V_1–xCr_x)₂O₃ and (V_1–xAl_x)₂O₃ systems. It is emphasized that the entropy of the I phase exceeds that of the M phase. Evidence is presented to show that the M and I phases coexist over a narrow temperature range. The transformation is attended by enormous hysteresis effects; these indicate that the lattice plays an important role in the transition. The probable role of Cr³⁺ and Al³⁺ as a dopant in the V₂O₃ lattice is briefly discussed. A phase diagram for the dilute V₂O₃-Al₂O₃ alloy system is presented.     

First-principles study on electronic structure, phase stability, and optical properties of In2X2O7 (X═C, Si, Ge or Sn)

In₂Ge₂O₇ and In₂Si₂O₇ are commonly used as scintillation materials. More studies on In₂X₂O₇ (X═C, Si, Ge, or Sn) are important to explore the possibility of using these materials for optoelectronic devices. This work presents results dealing with structural properties, electronic structure, chemical bonding, carrier effective masses, and optical spectra of polymorphs of In₂X₂O₇ obtained from first-principles calculations. The monoclinic phase of In₂Ge₂O₇, cubic and monoclinic phases of In₂Si₂O₇, as well as cubic phase of In₂Sn₂O₇ are known in scientific literature. From the total energy calculations at high pressure/strain we have found that the monoclinic phase of In₂Si₂O₇, In₂Ge₂O₇, and In₂Sn₂O₇ can be transformed into the cubic phase. The cubic phase of In₂Ge₂O₇ and In₂Sn₂O₇ is found to be more stable than the monoclinic phase. However, the monoclinic phase of In₂C₂O₇ and In₂Si₂O₇ is more stable than the cubic phase. The phase stability study suggests that In₂C₂O₇ is not stable, and that it might dissociate into corresponding binary oxides. Effective masses of electrons and holes have been estimated. Analysis of optical properties shows that in Si solar cells In₂Si₂O₇ and In₂Sn₂O₇ can be used as antireflection coating layer.     

The Study of Hole Distribution in High-Tc Tl- and Hg-based 1212 Type Cuprates via High-Resolution X-Ray Absorption Near Edge Structure

High resolution O K-edge and Cu L₃-edge X-ray absorption near-edge-structure (XANES) spectra of the high-T_c cuprates of (Tl_0.5Pb_0.5)Sr₂(Ca_1–xY_x)Cu₂O₇ (Tl-1212) and (Hg_0.5Pb_0.5)Sr₂(Ca_1–xY_x)Cu₂O₇ (Hg-1212) in powder form were measured using a bulk sensitive total-fluorescence-yield technique. Near the O 1s edge, the pre-edge peak with maxima at 528.3 eV is ascribed to the transitions to O 2p holes located in the CuO₂ planes. The intensity of this pre-edge peak increases with increasing doping level of Ca²⁺ into the Y³⁺ sites in Tl-1212 and Hg-1212. In the Cu L-edge absorption spectra, high-energy shoulders at around 933 eV are attributed to the transitions to the Cu(2p_3/2)^–13d¹⁰L states in the CuO₂ layers, where L denotes the O 2p ligand hole. The behavior of these shoulders in Tl-1212 and Hg-1212 correlates with that of the pre-edge peak at 528.3 eV in the O K-edge absorption spectra. The results can lead us to understand the hole distribution in high-T_c cuprates which will give a direction to find new high-T_c materials.     

Structural and magnetic study of nitrided Co74Fe8B12Si6 and Co74Fe4Mn4B12Si6 ribbons

The nitriding thermochemical treatment (NTT) is commonly used for steels. In this paper, the experimental conditions required for NTT, and the influence of such treatments on the structure and hysteresis loops of Co₇₄Fe₈B₁₂Si₆ and Co₇₄Fe₄Mn₄B₁₂Si₆ ribbons are reported. The results have been compared with those obtained with ribbons treated according to conventional thermal treatment (CTT) as well.     

Synthesis, composition, and structure of superconducting (Y, Ca)Sr, Ba)2Cu2GaO7?δ

The superconducting properties of Y_1–y Ca _y Sr₂Cu₂GaO_7– have been examined and related to the Ca content,y, and the use of annealing treatments at 350 bar oxygen. Superconductivity withT _c up to 41 K was found only for high-pressure-annealed samples, and the structural effects of Ca substitution and high-pressure treatment were examined using powder neutron diffraction. Small but significant changes in Cu-Cu and Cu-O distances were found and suggest that the Cu ions are more highly charged in superconducting samples. Partial substitution of Ba for Sr was found to be possible (up to 20%) to give samples which, after annealing in high-pressure oxygen, were superconducting at temperatures up to 68 K.     

Superconductivity at 103 K in CdBa2(Ca0.7Y0.3)Cu2Oy

A cadmium analogue of the mercury system with nominal composition CdBa₂(Ca_1–xY_x)Cu₂O_y has been synthesized. Thex=0 samples contain about 12 vol.% of the 1212 phase but are not superconducting. Thex=0.3 samples are superconducting atT _on = 103 K. The EDX analysis of 18 microcrystals shows a broad cationic distribution of the different components. The observed broad superconducting transition is attributed to the variousT _c of the different microcrystals.