液相外延原位Au掺杂碲镉汞薄膜材料的研究

通过液相外延方法,在碲锌镉衬底上制备了原位Au掺杂碲镉汞薄膜材料,采用金相显微镜、X光双晶衍射仪、二次离子质谱仪、Hall测试、少子寿命测试等手段对Au掺杂的碲镉汞薄膜材料进行了表征,外延片的表面形貌、晶格质量等和常规的碲镉汞外延材料基本相当,少子寿命较常规材料提高至少一个量级,芯片R0A提高至少5倍,并成功制备出了截止波长为10 μm的256×256探测器芯片,响应率非均匀性为2.85%,有效像元率为99.2%。     

长波红外材料n型Hg1—xCdxTe载波子寿命

测量了３种不同生长方法制备的长波红外碲镉汞晶体载流子寿命的温度变化关系,与窄禁带半导体载流子复合机构的理论计算结果比较表明,优质晶体中是以带间碰撞复合为主。     

砷离子注入体材料碲汞的二次离子质谱分析

用二次离子质谱（ＳＩＭＳ）分析了低能注放（１５０ｋｅＶ）砷在体材料碲镉汞中的分布和注入砷原子在碲镉汞中的热扩散情况,砷在碲镉汞中的分布表现出复杂的多元扩散机制。在缺陷密度（ＥＰＤ）比较低的碲镉汞材料中,砷扩散的主体符合恒定扩散系数的有限源扩散模型,呈现出浓度随深度的高斯分布。而在缺陷密度比较大的碲镉汞材料中,砷的分布呈多段指数型分布,表面出更复杂的多机制扩散特性。     

光刻工艺对大面阵长波碲镉汞芯片性能的影响

通过分析器件工艺对大面阵长波碲镉汞芯片性能的影响,发现光刻工艺非均匀性累积进而显著影响碲镉汞芯片性能的现象.应用Matlab仿真计算,定量分析了碲镉汞材料片表面凸点对不同线宽光刻工艺非均匀性的影响,提出了降低光刻工艺非均匀性累积的方法和高质量光刻工艺对碲镉汞材料平坦度的具体要求.     

瞬态光响应法测试中波碲镉汞器件少子寿命的新方法

在测试中波碲镉汞光伏器件的瞬态响应时,当激光光斑照射器件表面位置距离光敏面较远时,器件表现为特殊的双峰脉冲响应现象,分析表明出现这种异常双脉冲现象的原因是光敏区内的少子漂移和光敏区外侧向收集的少子扩散有时间上的差异。通过对器件施加反向偏压,脉冲响应随反向偏压的增大由双峰变成单峰的实验结果,验证了少子侧向收集是导致器件形成双峰的主要原因。对第二个峰拟合得到p区的少数载流子寿命。将瞬态响应获得的少子寿命与该p型中波碲镉汞材料的理论计算和光电导衰退法得到的少子寿命相对比,发现三种方式得到的少子寿命随温度的变化趋势基本一致,这说明了可以通过瞬态光响应得到中波碲镉汞器件的少子寿命。     

采用阳极氧化工艺的碲镉汞红外探测器在环境试验前后性能参数的变化情况

采用阳极氧化工艺的碲镉汞红外探测器在环境试验前后性能参数的变化情况田清华，范正风，郑苏丹（华北光电技术研究所北京１０００１５）碲镉汞红外探测器的表面钝化技术多种多样，阳极氧化法则是目前较常用的钝化工艺。氧化层本身起着两个重要作用：（１）提高薄膜附着力...     

不同介质层钝化的碲镉汞光导型探测器的氢化研究

利用氢等离子体对阳极氧化层和ZnS钝化的碲镉汞光导型探测器进行了氢化处理,发现对于阳极氧化层钝化的器件,氢化处理后性能衰退,表现在信号的降低和噪声的增加,从表面形貌的观察,发现原来呈蓝色的阳极氧化层在氢化处理后几乎完全消失,从光谱响应上表现为短波方向的响应下降,认为由于氢化过程中介质层的消失使得氢离子直接轰击碲镉汞表面,造成少子表面复合速度增加.对ZnS钝化的器件氢化处理后性能改善,表现为信号的提高和噪声的下降,从光谱响应上表现为短波方向的响应抬高,从表面形貌观察发现ZnS的颜色略有变化,台阶仪测试表明氢化后ZnS的厚度减薄了约70nm,通过SIMS测试分析发现氢化过程中H离子可以穿过ZnS层到达ZnS与碲镉汞的界面处,认为氢离子对界面态起到了钝化作用,降低了界面态密度从而提高了器件的性能.     

紫外辐照对碲镉汞MIS结构复合特性的影响

用光电导衰退法和ＭＩＳ器件的电容－电压特性测量研究了紫外辐照对碲镉汞样品的影响。研究表明：紫外辐照使ＭＩＳ器件的氧化膜／碲镉汞界面固定电荷减少，表面由积累向平带变化；紫外辐照使碲镉汞样品的电阻明显增大，样品的表面复合速度上升，少子体寿命下降．说明紫外辐射不仅对碲镉汞样品的表面有影响，而且在磅镉汞体内也有影响，这些效应可以用碲镉汞表面能带结构的模型来解释。     

碲镉汞晶片少数载流子寿命面分布的自动测试技术

建立了一套碲镉汞薄晶片加工过程中的少数载流子寿命面分布自动检测系统，用于碲镉汞我元光导器件制备工艺生产线，获得了１８０地器件性能分布同薄晶片少数载流子寿命分布一致的结果。     

非晶态碲镉汞的暗电导率和吸收边(英文)

研究了非晶态碲镉汞(x=0.2)薄膜的暗电导率随温度变化关系,发现非晶态结构的碲镉汞材料具有明显的半导体特性,其室温禁带宽度在0.88～0.91eV之间,与通过光学方法获得的结果相符。在80～240K的温度区间非晶态碲镉汞(x=0.2)的暗电导率从1×10—8Ω—1.cm—1缓慢增大到5×10-8Ω—1.cm—1,温度大于240K时,其电导率剧烈增大到1×10—5Ω—1.cm—1,说明在240K附近非晶态碲镉汞材料的导电机制发生了变化,这对非晶态碲镉汞材料的应用研究具有重要意义。还研究了退火过程对非晶态碲镉汞薄膜电导率的影响,结果表明140℃退火后非晶态碲镉汞薄膜发生了部分晶化。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.