Temperature dependence of the growth of gallium oxide on CoGa(100)

The oxidation of a CoGa(100) surface at high temperatures has been studied by scanning tunnelling microscopy (STM) and auger electron spectroscopy (AES). When CoGa(100) is oxidised at a sufficiently high temperature (>600 K), an ordered Ga₂O₃ film is formed. The stability of the film depends on the sample temperature and partial oxygen pressure of the ambient gas. At negligible oxygen pressure (<10⁻¹¹ mbar) the oxide is stable up to 850 K. At an oxygen pressure of 10⁻⁶ mbar the oxide is stable up to 930 K and some of the oxide remains present up to 970 K. The oxide film is found to be very uniform. The thickness of the film is constant and independent of the oxidation temperature (600 K<T<930 K), oxygen pressure (<10⁻⁶ mbar), and exposure (10⁻⁴–10⁻² mbar.s≈10²–10⁴ L). We find a clear improvement of the order of the oxide film surface with increasing oxidation temperature. In STM images, a domain structure of the oxide film is observed. The size of the domains increases by a factor of 5–10 when the oxidation temperature is increased from 700 to 900 K.     

A kinetic model for the degradation of benzothiazole by Fe3+-photo-assisted Fenton process in a completely mixed batch reactor

The degradation of benzothiazole in aqueous solution by a photo-assisted Fenton reaction has been studied in a batch reactor in the pH range 2.0–3.2 and for H₂O₂ and Fe(III) concentrations respectively between 1.0×10⁻³–1.5×10⁻¹ and 1.0×10⁻⁶–4.0×10⁻⁶ M.

A kinetic model has been developed to predict the decay of benzothiazole at varying reaction conditions. The use of kinetic constants from the literature in the model allows to simulate the system behavior by taking into account the influence of pH, hydrogen peroxide, Fe(III) and sulfate concentrations and the ionic strength.     

Highly conducting indium tin oxide (ITO) thin films deposited by pulsed laser ablation

Highly conducting and transparent indium tin oxide (ITO) thin films were prepared on SiO₂ glass and silicon substrates by pulsed laser ablation (PLA) from a 90 wt.% In₂O₃-10 wt.% SnO₂ sintered ceramic target. The growths of ITO films under different oxygen pressures (P_O2) ranging from 1×10⁻⁴–5×10⁻² Torr at low substrate temperatures (T_s) between room temperature (RT) and 200°C were investigated. The opto-electrical properties of the films were found to be strongly dependent on the P_O2 during the film deposition. Under a P_O2 of 1×10⁻² Torr, ITO films with low resistivity of 5.35×10⁻⁴ and 1.75×10⁻⁴ Ω cm were obtained at RT (25°C) and 200°C, respectively. The films exhibited high carrier density and reasonably high Hall mobility at the optimal P_O2 region of 1×10⁻² to 1.5×10⁻² Torr. Optical transmittance in excess of 87% in the visible region of the solar spectrum was displayed by the films deposited at Po₂≥1×10⁻² Torr and it was significantly reduced as the P_O2 decreases.     

Cyclic deformation behavior of double-slip-oriented copper single crystals I: coplanar double slip orientation on 011-1&#x0304;11 side of the stereographic triangle

The cyclic deformation behaviors of [2̄33] coplanar double-slip-oriented and [4̄ 18 41] single-slip-oriented copper single crystals were investigated at constant plastic shear strain amplitude γ_pl in the range of about 10⁻⁴–10⁻² at ambient temperature in air. It was revealed that the cyclic deformation behavior of copper single crystal oriented on the 011-1̄11 side is distinctly dissimilar from that on the 001-1̄11 and 001-011 sides in the stereographic triangle. The plot of initial hardening rate θ_0.2 against γ_pl of [2̄33] crystal exhibits two regions as presented for single-slip-oriented crystals. The critical strain amplitude (≈3.5×10⁻³), corresponding to the occurrence of the secondary hardening stage in the cyclic hardening curve of the [2̄33] crystal, was found to be an intermediate value between that for single-slip-oriented single crystals and polycrystals. The result shows that the cyclic hardening behavior of the [2̄33] crystal, as compared with that of single-slip-oriented crystals, is more close to that of polycrystals. Instead of a clear plateau, the cyclic stress–strain (CSS) curves of the [2̄33] crystals shows a quasi-plateau over the range of about 3.0×10⁻⁴–2.0×10⁻³, which would be greatly attributed to the mode of dislocation interactions between slip systems operating in the crystal. The habit plane of two types of deformation bands DBI and DBII, formed in the cyclically deformed [2̄33] crystal, are perpendicular to each other strictly, and they develop with increasing applied strain amplitude.     

Up-conversion dynamics in GdAlO3:Er single crystal fibre

Green fluorescence has been obtained under continuous laser excitation in the 780–860 nm range in GdAlO₃:Er³⁺. With the help of the Judd-Ofelt treatment we built a model based on population rate equations to describe its time evolution. We found the intensity parameters to be Ω₂ = 2.045 × 10⁻²⁰ cm², Ω₄ = 1.356 × 10⁻²⁰ cm² Ω₆ = 1. 125 × 10⁻²⁰ cm². Even if a two-photon absorption and a looping mechanism are necessary to well describe the dynamics, the main process responsible for up-conversion is energy transfer between erbium ions.     

Structure-composition-property dependence in reactive magnetron sputtered ZnO thin films

Thin films of zinc oxide (ZnO) were prepared by dc reactive magnetron sputtering on glass substrates at various oxygen partial pressures in the range 1×10⁻⁴–6×10⁻³ mbar and substrate temperatures in the range 548–723 K. The variation of cathode potential of zinc target on the oxygen partial pressure was explained in terms of target poisoning effects. The stoichiometry of the films has improved with the increase in the oxygen partial pressure. The films were polycrystalline with wurtzite structure. The films formed at higher substrate temperatures were (0 0 2) oriented. The temperature dependence of Hall mobility of the films formed at various substrate temperatures indicated that the grain boundary scattering of charge carriers was predominant electrical conduction mechanism in these films. The optical band gap of the films increased with the increase of substrate temperature. The ZnO films formed under optimized oxygen partial pressure of 1×10⁻³ mbar and substrate temperature of 663 K exhibited low electrical resistivity of 6.9×10⁻² Ω cm, high visible optical transmittance of 83%, optical band gap of 3.28 eV and a figure of merit of 78 Ω⁻¹ cm⁻¹.     

Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC

Ohmic contacts to the top p-type layers of 4H-SiC p⁺–n–n⁺ epitaxial structures having an acceptor concentration lower than 1×10¹⁹ cm⁻³ were fabricated by the rapid thermal anneal of multilayer Al/Ti/Pt/Ni metal composition. The rapid thermal anneal of multilayer A1/Ti/Pt/Ni metal composition led to the formation of duplex cermet composition containing Ni₂Si and TiC phases. The decomposition of the SiC under the contact was found to be down to a depth of about 100 nm. The contacts exhibited a contact resistivity R_c of 9×10⁻⁵ Ω cm⁻² at 21°C, decreasing to 3.1×10⁻⁵ Ω cm⁻² at 186°C. It was found that thermionic emission through the barrier having a height of 0.097 eV is the predominant current transport mechanism in the fabricated contacts.     

Compression testing of a sintered Ti6Al4V powder compact for biomedical applications

In this study, the compression deformation behavior of a Ti6Al4V powder compact, prepared by the sintering of cold compacted atomized spherical particles (100–200 μm) and containing 36–38% porosity, was investigated at quasi-static (1.6×10⁻³–1.6×10⁻¹ s⁻¹) and high strain rates (300 and 900 s⁻¹) using, respectively, conventional mechanical testing and Split Hopkinson Pressure Bar techniques. Microscopic studies of as-received powder and sintered powder compact showed that sintering at high temperature (1200 °C) and subsequent slow rate of cooling in the furnace changed the microstructure of powder from the acicular alpha () to the Widmanstätten (+β) microstructure. In compression testing, at both quasi-static and high strain rates, the compact failed via shear bands formed along the diagonal axis, 45° to the loading direction. Increasing the strain rate was found to increase both the flow stress and compressive strength of the compact but it did not affect the critical strain for shear localization. Microscopic analyses of failed samples and deformed but not failed samples of the compact further showed that fracture occurred in a ductile (dimpled) mode consisting of void initiation and growth in phase and/or at the /β interface and macrocracking by void coalescence in the interparticle bond region.     

Room temperature indium tin oxide by XeCl excimer laser annealing for flexible display

A XeCl excimer laser (λ=308 nm) has been used to anneal Indium Tin Oxide (ITO) films deposited at 25 °C using DC magnetron sputtering. With increasing laser fluence, the film crystallinity was improved while retaining the as-deposited 111 texture. As a result of laser irradiation, the sheet resistance of 100 nm ITO films decreased from 191 Ω/□ (1.91×10⁻³ Ω cm) to 25 Ω/□ (2.5×10⁻⁴ Ω cm), while the optical transmittance in the visible range increased from 70% to more than 85%. Surface roughness and etching properties were also significantly improved following laser annealing.     

New transparent conducting MgIn2O4---Zn2In2O5 thin films prepared by magnetron sputtering

New materials for a transparent conducting oxide film are demonstrated. Highly transparent Zn₂In₂O₅ films with a resistivity of 3.9 × 10⁻⁴ Ω cm were prepared on substrates at room temperature using a pseudobinary compound powder target composed of ZnO (50 mol.%) and In₂O₃ (50 mol.%) by r.f. magnetron sputtering. MgIn₂O₄---Zn₂In₂O₅ films were prepared using MgIn₂O₄ targets with a ZnO content of 0–100 wt.%. The resistivity of the deposited films gradually decreased from 2 × 10⁻³ to 3.9 × 10⁻⁴ Ω cm as the Zn/(Mg + Zn) atomic ratio introduced into the films was increased. The greatest transparency was obtained in a MgIn₂O₄ film. The optical absorption edge of the films decreased as the Zn/(Mg + Zn) atomic ratio was increased, corresponding to the bandgap energy of their materials. It was found that the resistance of the undoped Zn₂In₂O₅ films was more stable than either the undoped MgIn₂O₄, ZnO or In₂O₃ films in oxidizing environments at high temperatures.     

Excited-state absorption at 1.57 μm in U:CaF2 and Co:ZnSe saturable absorbers

Appreciable excited-state absorption (ESA) in U²⁺:CaF₂ and Co²⁺:ZnSe saturable absorbers was measured at λ=1.573 μm by optical transmission versus light fluence curves of 30–40 ns long pulses. The ground- and excited-state absorption cross-sections obtained were (9.15±0.3)×10⁻²⁰ and (3.6±0.2)×10⁻²⁰ cm², respectively, for U²⁺:CaF₂, and (57±4)×10⁻²⁰ and (12.5±1)×10⁻²⁰ cm² for Co²⁺:ZnSe. Thus, ESA is not negligible in U²⁺:CaF₂ and Co²⁺:ZnSe, as previously estimated.     

Characterization of indium zinc oxide thin films prepared by pulsed laser deposition using a Zn3In2O6 target

Using a Zn₃In₂O₆ target, indium-zinc oxide films were prepared by pulsed laser deposition. The influence of the substrate deposition temperature and the oxygen pressure on the structure, optical and electrical properties were studied. Crystalline films are obtained for substrate temperatures above 200°C. At the optimum substrate deposition temperature of 500°C and the optimum oxygen pressure of 10⁻³ mbar, both conditions that indeed lead to the highest conductivity, Zn₃In₂O₆ films exhibit a transparency of 85% in the visible region and a conductivity of 1000 S/cm. Depositions carried out in oxygen and reducing gas, 93% Ar/7% H₂, result in large discrepancies between the target stoichiometry and the film composition. The Zn/In (at.%) ratio of 1.5 is only preserved for oxygen pressures of 10⁻²–10⁻³ mbar and a 93% Ar/7% H₂ pressure of 10⁻² mbar. The optical properties are basically not affected by the type of atmosphere used during the film deposition, unlike the conductivity which significantly increases from 80 to 1400 S/cm for a film deposited in 10⁻² mbar of O₂ and in 93% Ar/7% H₂, respectively.     

Mechanical and machining properties of X38CrMoV5-1/Al2O3 metal matrix composites and components

Large plates and discs of X38CrMoV5-1/Al₂O₃ metal matrix composites (MMCs) were produced via Ti-activated pressureless melt infiltration. After machining the plates were characterised using non-destructive testing methods (X-ray and ultrasonic C-scans) in order to investigate the quality of infiltration before preparing bars for four-point-bending tests. Subsequently, parts of the plates were used for machining tests, including sawing, welding and spark erosion. Furthermore, MMC discs were prepared for wear tests. The as-infiltrated MMC discs show a low wear rate of 1.6 × 10⁻¹⁰–2.2 × 10⁻¹⁰ m/s, which is 2–3 times better than the hardened steel itself, or 12–17 times better compared to X38CrMoV5-1 in the annealed state. As a first component a wire-drawing die was fabricated and successfully tested for drawing Al alloy AA6082 and steel 16MnCr5.     

Development of Bi-oxide superconducting tapes and coils

We have developed Bi-2212 and 2223 tapes. For Bi-2212, two double stacked pancake type coils were fabricated using Bi-2212/Ag tapes prepared by a combination of the continuous dip-coating process and melt-solidification. A small coil (13 mm inner bore, 46.5 mm outer diameter) was inserted in a conventional superconducting magnet system. In a bias field of 20.9 T, the generated field of the coil was 0.9 T, at an I_c of 310 A (criterion 10⁻¹³ Ωm) at 1.8 K. Thus, the superconducting magnet system achieved the generation of a field of 21.8 T in the full superconducting state. A large coil (20 mm inner bore, 94 mm outer diameter) generated a field of 2.6 T (I_c = 385 A (10⁻¹³ Ωm)) at 4.2 K and 1.53 T (I_c = 225 A (10⁻¹³Ωm)) at 20 K in self-field. For Bi-2223, tapes were prepared by the powder-in-tube technique using Ag-10% Cu-x%M (x = 0–1.0, M = Ti, Zr, Hf or Au) alloy sheaths. The high J_c values of 5–7 × 10⁴ A cm⁻² at 4.2 K and 14 T were obtained for the tapes doped with x = 0.03–0.1 at.% Ti, 0.1 at.% Zr, 0.1 at.% Hf or 0.3% Au. These tapes have a modified Bi-2223 grain structure at the sheath/core interface and also a dense and more aligned microstructure, resulting in higher J_c values.     

Comparison between measurements on Rayleigh scattering and form-factor theories for 1 Å ≤ x ≤ 50 Å

From our measured differential cross section of Rayleigh scattering, the form factor for momentum transfers in the range 1 Å⁻¹ ≤ x ≤ 50 Å⁻¹ was deduced. Data for U, Pb, Pt, W, Sn, Cd, Ag, Mo and Cu at energies from 60 to 662 keV and scattering angles ranging from 5° to 140° were used. In addition, for the region 1 Å⁻¹ ≤ x ≤ 50 Å⁻¹ of momenta, experimental data from other authors at higher energies were analyzed. The experimental values obtained were compared with various form-factor theories and limits of validity are established. For the relativistic modified form factor G a good agreement always exists for θ ≤ 65°, independently of energy and atomic number.     

Underlying mechanisms for unique elastic properties of nanocrystalline Au

In order to get an insight into the grain boundaries (GBs) in nanocrystalline (n-) metal, we prepared the high-density n-Au with ρ/ρ₀>99% by the gas-deposition method and carried out the vibrating reed measurements, where ρ/ρ₀ is the relative density referring to the bulk density. The strain amplitude dependence (SAMD) of the resonant frequency (f) and the internal friction (Q⁻¹) was measured for the strain () amplitude between 10⁻⁶ and 2×10⁻³ and for temperature between 5 and 300 K. No plastic deformations are detected for the present strain range, where f decreases for up to 10⁻⁴ and then turns to increase, showing saturation for between 10⁻⁴ and 2×10⁻³. The low temperature irradiation by 2 MeV electrons or 20 MeV protons causes an increase in the Young’s modulus at 6 K, which is surmised to reflect a modification of the anelastic process in the GB regions. In contrast, the SAMD of f is hardly modified by irradiation, suggesting that it is indicative of a collective motion of atoms in n-Au.     

Preparation of PbO nanoparticles by microwave irradiation and their application to Pb(II)-selective electrode based on cellulose acetate

Nanosized lead oxide particles were prepared by thermal decomposition of lead hydroxycarbonate synthesized under microwave irradiation. Urea and lead nitrate were used as the starting materials. Microstructure and morphology of the products were investigated by means of XRD, AFM, TEM, and IR absorption spectra. The results indicated that well crystallized, finely dispersed and spherical -PbO nanoparticles with a size of ca. 30 nm were obtained. Meanwhile, an orthogonal phase β-PbO with a size of ca. 38 nm was also obtained when the calcinations temperature was up to 600 °C. In addition, a Pb(II)-selective electrode based on cellulose acetate was prepared using nanosized -PbO powders synthesized. The electrode exhibited a Nernstian slope of 29±1 mV per decade in a linear range of 2.5×10⁻⁵ mol L⁻¹ to 1.0×10⁻¹ mol L⁻¹ for Pb²⁺ ion. The detection limit of this electrode is down to 8.0×10⁻⁶ mol L⁻¹. This sensor has a short response time of about 10 s and could be used in a pH range of 2.0–8.0. High selectivity was obtained over a wide variety of metal ions.     

Ordered Langmuir-Blodgett films of a substituted lutetium bisphthalocyanine

High-quality LB multilayers have been prepared from the Lu(III) sandwich complex of 2,3,9,10,16,17,23,24-octa (n-butoxy)phthalocyanine (LuPc₂(OBu)₁₆). Surface pressure-area isotherms were characterized and indicate that a stable monolayer is formed corresponding to an area per molecule of 2.4 nm² at 30 mN m⁻¹. The LB films were highly birefringent, and polarized spectra gave dichroic ratios of 3.3 for the 670 nm absorption band and between 0.5 and 2.8 for infrared absorptions. The results indicate that the phthalocyanine rings were highly oriented perpendicular to the dipping direction but somewhat tilted from the substrate normal. The order was shown to be absent when (i) unsubstituted LuPc₂ was used for LB films, or (ii) the horizontal lifting method of film deposition was used, or (iii) the surface pressure was increased to 50 mN m⁻¹, causing a molecular rearrangement. The ordering was improved at 100 °C and finally lost at 280 °C by annealing on a hot stage. The d.c. electrical conductivity of LB films of LuPc₂(OBu)₁₆ was low (σ ≈ 2 × 10⁻⁷ Ω⁻¹ m⁻¹), in contrast with unsubstituted LuPc₂ (σ ≈ 10⁻¹ Ω⁻¹ m⁻¹) and showed no evidence for anisotropy. The findings are in broad agreement with related studies and illustrate some of the many factors involved in improving the structure of phthalocyanine LB films for possible applications.     

Yb to Er energy transfer and rate-equations formalism in the eye safe laser material Yb:Er:Ca2Al2SiO7

Rate equations formalism is used to predict the population ratio of the Er^{3+ 4}I_13/2 levels involved in the 1.55 μm laser transition in the Yb:Er:CAS laser materials. An effective Yb → Er energy transfer, favourable to the Er³⁺ 1.55 μm laser emission, is demonstrated in this laser host. Indeed, the Yb → Er transfer and the Er → Yb back transfer rates are calculated to be 6 x 10⁻¹⁶ and 0.45 x 10⁻¹⁶ cm³ s⁻¹, respectively. Attempts of codoping the system with Nd³⁺, Eu³⁺ and Ce³⁺ have been realised in order to increase the population of the Er^{3+ 4}I_13/2 laser emitting level. Best results are obtained with Ce³⁺ ion since in the sample containing 6 x 10²⁰ Ce³⁺/cm³, the Er^{3+ 4}I_11/2 level lifetime is divided by a factor of 3 while the Er^{3+ 4}I_13/2 fluorescence lifetime remains unaffected. On the contrary, codoping with Nd³⁺ or Eu³⁺ ions simultaneously decreases the Er^{3+ 4}I_11/2 and ⁴I_13/2 kinetics parameters. The role of the other parameters such as Yb/Er concentrations ratios is also discussed.     

Atomic layer deposition growth of zirconium doped In2O3 films

Zirconium doped indium oxide thin films were deposited by the atomic layer deposition technique at 500 °C using InCl₃, ZrCl₄ and water as precursors. The films were characterised by X-ray diffraction, energy dispersive X-ray analysis and by optical and electrical measurements. The films had polycrystalline In₂O₃ structure. High transparency and resistivity of 3.7×10⁻⁴ Ω cm were obtained.