Relationship between photoluminescence and structural properties of the sputtered Zn1−xCdxO films on Si substrates

Zn_1−xCd_xO (x=0.2, 0.4) alloyed crystal thin films have been deposited on Si(1 1 1) substrates at different temperatures by using dc reactive magnetron sputtering technique. The Zn_1−xCd_xO films are of highly (0 0 2)-preferred orientation possessing the hexagonal wurtzite structure of pure ZnO. At 450 °C, the films have better crystal quality and photoluminescent characteristics. For the films with x=0.2 and 0.4, the corresponding near-band-edge (NBE) energies are 3.10 and 3.03 eV, respectively, both have red-shifts compared with that of ZnO (3.30 eV). For the substrate temperatures lower or higher than 450 °C, the other NBE emission peak appears, the X-ray diffraction intensity of (0 0 2) peak decreases and the related FWHM increases. With the Cd addition up to x=0.4 both the XRD and PL intensity of the Zn_1−xCd_xO films decrease sharply in comparison with x=0.2.     

Ca4REO(BO3)3 crystals for green and blue microchip laser generation: from crystal growth to laser and nonlinear optical properties

We have taken advantage of congruent melting behavior of the nonlinear rare-earth oxoborate Ca₄REO(BO₃)₃ family to perfect a process of collective fabrication of self-frequency doubling microchip laser based on Nd:GdCOB (Ca₄Gd_1−xNd_xO(BO₃)₃) crystals. The process goes from Czochralski boule to 1 × 3 mm² chips perfectly oriented (better than 0.1°) to the phase matching direction (θ=90°, φ=46°) in the XY principal plane, with dielectric mirrors directly deposited on both faces of the chips. 20 mW of self-frequency doubling output power at 530 nm was performed under 800 mW of diode laser as incident pump power at 812 nm. In addition, new compositions from the solid solution Ca₄Gd_1−xY_xO(BO₃)₃ (Gd_1−xY_xCOB) (x=0.13, 0.16, 0.44) have been grown by the Czochralski pulling method, in order to achieve noncritical phase matching (NCPM) second harmonic generation of ⁴F_3/2 → ⁴I_9/2 Nd³⁺ doped laser hosts. Three types of laser wavelengths have been chosen: Nd:YAP (YAlO₃) at 930 nm, Nd:YAG (Y₃Al₅O₁₂) at 946 nm, and Nd:ASL (Nd_ySr_1−x La_x−yMg_x Al_12−xO₁₉) at 900 nm. Angular acceptance measurements of these three types of compositions present very large values, compared to pure GdCOB or YCOB oriented in critical phase matching configurations.     

Microstructures and thermoelectric properties of p-type pseudo-binary AgxBi0.5Sb1.5−xTe3 (x = 0.05–0.4) alloys prepared by cold pressing

The p-type pseudo-binary Ag_xBi_0.5Sb_1.5−xTe₃ (x = 0.05–0.4) alloys were prepared by cold pressing. The thermal conductivities (κ) were calculated from the values of heat capacities, densities and thermal diffusivities measured, and range approximately from 0.66 to 0.56 (W K^− 1 m^− 1) for the Ag_xBi_0.5Sb_1.5−xTe₃ alloy with molar fraction x being 0.4. Combining with the electrical properties obtained in the previous study, the maximum dimensionless figure of merit ZT of 1.1 was obtained at the temperature of 558 K.     

Effects of Ho2O3 addition on defects of BaTiO3

Effects of Ho₂O₃ addition on defects of BaTiO₃ ceramic have been studied in terms of electrical conductivity at 1200 °C as a function of oxygen partial pressure (P_O2°) and oxygen vacancy concentration. The substitution of Ho³⁺ for the Ti site in Ba(Ti_1−xHo_x)O_3−0.5x resulted in a significant shift of conductivity minimum toward lower oxygen pressures and showed an acceptor-doped behavior. The solubility limit of Ho on Ti sites was confirmed less than 3.0 mol% by measuring the electrical conductivity and the lattice constant. Oxygen vacancy concentrations were calculated from the positions of P_O2° in the conductivity minima and were in good agreement with theoretically estimated values within the solubility limit. The Curie point moved to lower temperatures with increasing the oxygen vacancy concentration and Ho contents.     

Structural, electronic and optical properties of Sn1−xSbxO2

The goal of this paper is to undertake a detailed first principle calculation of the structural, electronic and optical properties of Sn_1−xSb_xO₂. The results show that the stability of Sn_1−xSb_xO₂ in the full range of Sb content points to the probability of a continuous solid solution, where the increasing Sb content leads to volume expansion with different variation trends in the lattice constants. The increase of Sb concentration in the semiconductor–metal–semimetal transition occurs in consonance with the corresponding changes in its structural, electronic and optical properties. Two competing mechanisms play essential roles in this transition, namely; the many body effect and the atom disorder. Our calculations concur with previous X-ray diffraction, sheet resistance, resistivity and optical parameters detections. The studies present a practical way of tailoring the physical behaviors of Sn_1−xSb_xO₂ through the alloying technique.     

Analyses of nano-crystalline LiCoVO4 prepared by solvothermal reaction

LiOH·H₂O, Co(NO₃)₂·6H₂O and NH₄VO₃ were used to prepare nano-crystalline LiCoVO₄ by 150 °C solvothermal reaction in isopropanol for 10–360 h and subsequent calcination at 300–500 °C for 6 h. XRD, TEM and selected area electron diffraction (SAED) revealed the presence of nano-crystalline LiCoVO₄ with inverse spinel structure. The V–O stretching vibration modes of VO₄ tetrahedrons were detected by FTIR over the range 617–835 cm^− 1 and by Raman spectrometer at 805.7 and 783.1 cm^− 1. Co, V and O were detected by EDX. TGA of solvothermal products shows weight loss due to the evaporation and decomposition processes at 40–648 °C.     

Luminescence properties of Sn2P2Se6 crystals

A large family of Sn_2yPb_2(1−y)P₂S_6xSe_6(1−x) semiconductor-ferroelectric crystals were obtained by the Bridgman technique. The photoluminescence properties of the Sn_2yPb_2(1−y)P₂S_6xSe_6(1−x) family crystals strongly depend on their chemical composition, excitation energy and temperature. The influence of the Pb → Sn and S → Se isovalent substitutions on the luminescence properties of a crystal with the Sn₂P₂Se₆ basic composition was investigated. A broad emission band observed in the Sn₂P₂Se₆ crystal with a maximum roughly at 600 nm (at T = 8.6 K) was assigned to a band-to-band electron-hole recombination, whereas broad emission bands, peaked near 785 nm (at T = 8.6 K) and 1025 nm (at T = 44 K) were assigned to an electron-hole recombination from defect levels localised within the bandgap. Possible types of recombination defect centres and specific mechanisms of luminescence in the Sn₂P₂Se₆ semiconductor-ferroelectric crystals were considered and discussed on the basis of the obtained results and the referenced data.     

Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate

The present work was made to investigate the effect of oxygen pressure of SiO_x layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiO_x buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiO_x layer as a buffer, the electrical resistivity of GZO/SiO_x/PET films gradually decreased from 7.6 × 10^− 3 to 6.8 × 10^− 4 Ω·cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiO_x buffer layers. In addition, the average optical transmittance of GZO/SiO_x/PET films in a visible regime was estimated to be ~ 90% comparable to that of GZO deposited onto a glass substrate.     

Rapid densification and reaction sequences in self-reinforced Y-α-SiAlON ceramics with barium aluminosilicate as an additive

Y-α-SiAlON (Y_1/3Si₁₀Al₂ON₁₅) ceramics with 5 wt.%BaAl₂Si₂O₈ (BAS) as an additive were synthesized by spark plasma sintering (SPS). The kinetic of densification, phase transformation sequences and grain growth during sintering process were investigated. Full densification could be achieved by 1600 °C without holding and using a heating rate of 100 °C min⁻¹, but the transformation from α-Si₃N₄ to α-SiAlON is not completed simultaneously with the densification process. The equilibrium phase assemblage could be reached after SPS at 1800 °C for 5 min and the resultant material possesses self-reinforced microstructure with high hardness of 19.2 GPa and fracture toughness of 6.8 MPa m^1/2. The complete crystallization of BAS is beneficial to the high temperature mechanical properties. The obtained could maintain the room strength up to 1300 °C.     

Origin of Spin-Glass Behavior of Zn1 ? xMnxO

Alternating current susceptibility has been studied for polycrystalline Zn_{1 – x} Mn _x O. Stoichiometric samples demonstrate Curie–Weiss behavior, which indicates mostly antiferromagnetic interactions. Magnetic susceptibility can be described by a diluted Heisenberg magnet model developed for semimagnetic semiconductors. High-pressure oxygen annealing induces spin-glass like behavior in Zn_{1 – x} Mn _x O by precipitation of ZnMnO₃ in the paramagnetic matrix.     

Synthesis and characterization of LiCo0.3−xGaxNi0.7O2 (x = 0, 0.05) as a cathode material for lithium ion battery

The single phase of LiCo_0.3−xGa_xNi_0.7O₂ (x = 0, 0.05) was synthesized by a sol–gel method. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrochemical performance. The powders are homogeneous and have a good-layered structure. The synthesized LiCo_0.25Ga_0.05Ni_0.7O₂ exhibits better electrochemical performance with an initial discharge capacity of 180.0 mAh g⁻¹ and a capacity retention of 95.2% after 50 cycles between 2.8 and 4.4 V at 0.2C rate. The study on the structural evolution of the material during the cycling shows that Ga-doping improves the structure stability of LiCo_0.3Ni_0.7O₂ at ambient temperature and 55 °C. Meanwhile, Ga-doping not only suppresses the alternating current (AC) impedance of LiCo_0.3Ni_0.7O₂ but also promotes the Li⁺ diffusion in LiCo_0.3Ni_0.7O₂. Furthermore, thermal stability of the charged LiCo_0.25Ga_0.05Ni_0.7O₂ is improved, which may be attributed to the retard of O₂ evolution in LiCo_0.3Ni_0.7O₂ and the suppression of electrolyte oxidation during cycling by Ga-doping_.     

Structural and mechanical characterization of BCxNy thin films deposited by pulsed reactive magnetron sputtering

BC_xN_y thin films deposited at 250 °C by pulsed reactive magnetron sputtering of a B₄C target in an Ar/N₂ plasma were studied by elastic recoil detection analysis, Fourier transform infrared, Raman, and photoelectron spectroscopy, electron microscopy, and nanoindentation. In the concentration range of 6% to 100% N₂ in the sputter plasma the segregation into nanocrystalline hexagonal boron nitride and amorphous sp² carbon is the dominant process during the film growth. The stoichiometric ratio and structural details of the major phases depend on the N₂ concentration in the plasma and have significant influence on the Young′s modulus and the elastic recovery of the BC_xN_y thin films.     

Doping-induced microstructural, textural and optical properties of In2Ti1−xVxO5+δ semiconductors and their role in the photocatalytic splitting of water

The physicochemical properties of V-doped indium titanates (In₂Ti_1−xV_xO_5+δ, 0.0 ≤ x ≤ 0.2) were investigated by using XPS, powder XRD, UV–vis, SEM and luminescence spectroscopy techniques. The Rietveld refinement of XRD data revealed that even though the V-containing samples were isostructural with In₂TiO₅ (orthorhombic space group Pnma), a systematic x-dependent variation was noticeable in the Ti–O bond lengths in [TiO₆] octahedral units, cell parameters and in the value of δ. XPS results confirmed the coexistence of V⁵⁺ and V⁴⁺ states, leading thereby to an enhancement in oxygen non-stoichiometry in the doped samples. A loading-dependent progressive shift from 400 to 750 nm was also observed in the onset of the absorption edge, indicating a significant narrowing of the band gap. Furthermore, the samples with higher V-content were comprised of the grain clusters having larger size and an irregular shape. The UV–vis, photoluminescence and thermoluminescence studies indicate that the doping-induced lattice defects may give rise to certain closely spaced acceptor/donor energy levels in between the band gap of host matrix. The indium titanates are found to serve as stable photocatalysts for water splitting under visible light, where oxygen was the major reaction product. The role of microstructural and morphological properties in the photocatalytic activity is discussed.     

The microwave-assisted synthesis and characterization of Zn1 − xCoxO nanopowders

In this paper, we present a simple microwave-assisted synthesis of Zn_1 − xCo_xO nanopowders. With the advantages of the microwave-assisted method, we have successfully synthesized good crystalline quality and good surface morphology Zn_1 − xCo_xO nanopowders. The nanopowders are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-VIS absorption, and micro-Raman spectroscopy. We found, in the synthesis process, the surfactant Triethanolamine (TEA) plays an important role on the morphology of Zn_1 − xCo_xO nanoparticles. The XRD study shows that for Co doping up to 5%, Co²⁺ ions are successfully incorporated into the ZnO host matrix. The absorption spectra of Zn_1 − xCo_xO (x = 1-5%) nanopowders show several peaks at 660, 611 and 565 nm, indicating the presence of Co²⁺ ions in the tetrahedral sites. The Raman study shows that the linewidth of E₂^low mode increases with Co concentration, which further indicates the incorporation of Co²⁺ ions into the ZnO host matrix.     

Structural, electrochemical and thermal properties of LiNi0.8−xCo0.2CexO2 as cathode materials for lithium ion batteries

A series of cathode materials for lithium ion batteries with the formula LiNi_0.8−xCo_0.2Ce_xO₂ (0 ≤ x ≤ 0.03) were synthesized by sol–gel method using citric acid as a chelating agent. The effects of cerium substitution on the structural, electrochemical and thermal properties of the cathode materials are investigated through X-ray diffraction (XRD), charge–discharge cycling, cyclic voltammogram (CV), electrochemical impedance spectroscopy (EIS) experiments and differential scanning calorimetry (DSC). Results show that the Ce substitution made the layered structure of materials more regular and less cation-ion mixing. An effective improved cycling performance is observed for cerium-doped cathode materials, which is interpreted to a significant suppression of phase transitions and charge-transfer impedance increasing during cycling. The thermal stability of cerium-doped materials is also improved, which can be attributed to its lower oxidation ability and enhanced structural stability at delithiated state.     

Structural Studies of the Superconducting La2.5Y0.5CaBa3(Cu1?xFex)7Oz (0 ≤ x ≤ 0.1) Perovskite System by Neutron Diffraction

We have investigated the effect of Fe substitution on the structural and superconducting properties of La_2.5Y_0.5CaBa₃(Cu_1–x Fe _x )₇O _z system by Rietveld refinement of the neutron diffraction patterns of three samples with x = 0.02 (labelled B₁), x = 0.06 (B₂), and x = 0.10 (B₃) along with X-ray diffraction, resistivity, AC susceptibility, and oxygen-content measurements. Samples B₁, B₂, and B₃ are superconducting with T _c ^R=0 values of 73, 62, and 41 K, respectively. Neutron diffraction studies confirm (i) the formation of a single phase tetragonal structure (space group P4/mmm) for all three samples, (ii) Ca and Y ions substitution at the La site concomitantly displaces La onto Ba sites, and (iii) increasing x from 0.02 to 0.10 increases oxygen content (the amount of oxygen per unit cell), as well as Cu(1)— O(4) and Cu(1)— O(1) bond lengths whereas Cu(2)— O(4) bond length decreases with corresponding decrease in T _c to 41 K due to increasing occupancy of Fe ions at Cu(2) site. The change in bond lengths with oxygen content are essentially the same as those of Fe content (x). Present studies establish a correlation between the bond lengths (Cu(1)— O(1), Cu(1)— O(4), and Cu(2)— O(4)) and the measured T _c values of three samples.     

Synthesis and characterization of nanocrystalline manganese pyrophosphate Mn2P2O7

Mn₂P₂O₇ polyhedral particles were synthesized by simple and cost-effective method using manganese nitrate hydrate and phosphoric acid in the presence of nitric acid with further calcinations at the temperature of 800 °C. The crystallite size obtained from X-ray line broadening is 31 ± 13 nm for the Mn₂P₂O₇. The X-ray diffraction and SEM results indicated that the synthesized nanoparticles have only the structure without the presence of any other phase impurities. The FT-IR and FT-Raman spectra show characteristic bands of the P₂O₇⁴⁻ anion. The UV–Vis–NIR spectrum confirms the octahedral coordination of Mn²⁺ ion.     

Chemical solution deposition of YBa2Cu3O7−x coated conductors

At present, the development of superconducting YBa₂Cu₃O_7−x coated conductors attracts much attention due to their enormous application potential in electric power systems. Worldwide research is focused on the investigation and improvement of buffer materials and YBa₂Cu₃O_7−x superconducting properties as well as low-cost manufacturing processes in cooperation with industrial companies. Accordingly, chemical solution deposition has emerged as a highly competitive, versatile, and cost-effective technique for fabricating coated conductors of high performance. New chemical solution approaches are under development for buffer layer deposition. In order to achieve high critical current carrying YBa₂Cu₃O_7−x layers, the established trifluoroacetate route is favored. This paper reviews the most recent work on chemical solution deposition within the IFW Dresden while also considering achievements on this specific research topic worldwide.     

SiCf/O′-SiAlON composite: properties and oxidation retained properties

A composite of O′SiAlON (Si_2-xAl_xN_2-xO_1+x, with x 0.14) reinforced with 20 vol.% SiC monofilaments was fabricated by hot-pressing, at 1600°C, for 2 h under 34 MPa pressure. The mechanical and interfacial properties of the composites, as-fabricated as well as post-oxidized, were, investigated. The composite exhibited a significant improvement in ultimate flexure strength (640 MPa) and work of fracture (42 kJ m⁻²) compared with that (350 MPa and 1.8 kJ m⁻², respectively) of the monolithic material. These mechanical properties were slightly increased after the composite was heat treated for 24 h in air at 1200 and 1300°C. However, the composite exhibited a significant degradation in ultimate strength, while the work of fracture (WOF) remained unchanged after exposure in air at temperatures beyond 1400°C. The as-fabricated composite revealed a low interfacial shear strength (6.2 MPa) and a frictional sliding stress (3.2 MPa). After the composite was oxidized at elevated temperatures, the interfacial bonding and sliding stresses were reduced to noticeable extents, resulting from the degradation of the carbon coating layer of the SiC monofilaments.     

Study on structural phase transitions and relaxation processes of Cs2Co(SO4)2·6H2O and Cs2Zn(SO4)2·6H2O crystals

The structural phase transitions and relaxation processes of Cs₂Co(SO₄)₂·6H₂O and Cs₂Zn(SO₄)₂·6H₂O single crystals were investigated, with the phase transitions of both crystals being determined from NMR data. The spin–lattice relaxation time, T₁, of the ¹³³Cs nucleus in two crystals undergoes a significant change near the phase transition temperature, T_C, and these changes coincide with the changes in the splitting of the ¹³³Cs resonance lines. The variations in the temperature dependence for the splitting of the ¹³³Cs resonance lines and T₁ near T_C are related to changes in the symmetry of surrounding Cs⁺. In addition, the ¹³³Cs T₁ of Cs₂Co(SO₄)₂·6H₂O, which contains paramagnetic ions, was found to be shorter than that of Cs₂Zn(SO₄)₂·6H₂O. This relaxation time is inversely proportional to the square of the magnetic moment of the paramagnetic ions. The differences between the ¹³³Cs T₁ of these compounds are probably due to the differences between the electronic structures of their metal ions.