Microstructures and Microwave Dielectric Characteristics of Ba6 − 3x (Sm1 − y La y )8 + 2x Ti18O54 Solid Solutions (x = 2/3 and 0.75)

Ba_{6 – 3x} (Sm_{1 – y} La _y )_{8 + 2x} Ti₁₈O₅₄ solid solutions were prepared and characterized. For x = 2/3, tungsten bronze type solid solutions were observed in the entire range of y = 0–1. While, La substitution for Sm will change the phase constitution in Ba_{6 – 3x} Sm_{8 + 2x} Ti₁₈O₅₄ ceramics with x = 0.75. Though the single phase solid solutions were observed for the compositions at the vicinity of the end-members, La₄Ti₉O₂₄ secondary phase was detected for the compositions of y = 0.3–0.8. For x = 2/3, the dielectric constant increased continuously with increasing y, and the Q · f value increased slightly at first then decreased. The dielectric constant had more complex change with increasing y for the situation of x = 0.75 where Q · f value decreased continuously. In both cases, the temperature coefficient of resonant frequency varied from negative to positive with increasing y.     

Characterization and dielectric properties of Ba5LnNiTa9O30 (Ln = La, Nd and Sm) ceramics

Three novel Ba₅LnNiTa₉O₃₀ (Ln = La, Nd and Sm) ceramics were prepared and characterized in the BaO-Ln₂O₃-NiO-Ta₂O₅ system. All three compounds adopted the filled tetragonal tungsten bronze (TB) structure at room temperature. The present ceramics exhibited relaxor behavior, and the Curie temperature (at 10kHz) were −130, −80 and −45°C for Ba₅LaNiTa₉O₃₀, Ba₅NdNiTa₉O₃₀, and Ba₅SmNiTa₉O₃₀ respectively. At room temperature, Ba₅LnNiTa₉O₃₀ ceramics have a high dielectric constants in the range 102∼118, a low dielectric loss in range 0.0019∼0.0036, and the temperature coefficients of the dielectric constant (τ_ɛ) in the range −320∼−460 ppm°C⁻¹ (at 1 MHz).     

微波烧结La掺杂CaCu3Ti4O12陶瓷的结构、介电和压敏性能

采用微波快速烧结法制备了La掺杂CaCu3Ti4O12致密陶瓷,研究了其结构、介电和压敏性能。所有Ca1-3x/2LaxCu3Ti4O12陶瓷均形成了CCTO晶相,但是La含量低于0.10时存在CuO第二相。随着La含量增加,Ca1-3x/2LaxCu3Ti4O12陶瓷介电常数随频率和温度变化越来越小;压敏电压逐渐增大,非线性系数也明显改善。其中La含量x=0.15时,Ca1-3x/2LaxCu3Ti4O12陶瓷具有良好的压敏性能:压敏电场强度为5.25 kV/cm,非线性系数为26.3。     

Microwave Dielectric Characteristics of MgTiO<Subscript>3</Subscript>/CaTiO<Subscript>3</Subscript> Layered Ceramics

MgTiO₃/CaTiO₃ layered ceramics with differently stacking were fabricated and the microwave dielectric properties were evaluated with TE₀₁₁ mode. With increasing CaTiO₃ thickness fraction, the resonant frequency decreased and the dielectric constant increased with a near-linear relation for the bi-layer ceramics, while the values of the tri-layer MgTiO₃/CaTiO₃/MgTiO₃ ceramics with thickness ratio of 1:1:1 derived much from the curves of the bi-layer ceramics. The finite element method was used to give an explanation for the differences between the bi-layer and tri-layer ceramics.     

CaTiO3-NdAlO3系微波介质陶瓷的研究进展

综述了具有中等介电常数的CaTiO3-NdAlO3微波介质陶瓷在晶体结构、制备及反应过程、介电性能等方面的研究进展,总结了该体系微波介质陶瓷研究中存在的问题及其发展趋势。     

CaTiO3-NdAlO3系微波介质陶瓷的研究进展

综述了具有中等介电常数的CaTiO3-NdAlO3微波介质陶瓷在晶体结构、制备及反应过程、介电性能等方面的研究进展,总结了该体系微波介质陶瓷研究中存在的问题及其发展趋势。     

BCB对CSLLT陶瓷的烧结及介电性能的影响

在CaO-SrO-Li2O-Sm2O3-Nd2O3-TiO2(简称CSLLT)陶瓷中加入BaCu(B2O5)(简称BCB),研究了BCB对CSLLT陶瓷的烧结特性和介电性能的影响。结果表明:随BCB的添加,CSLLT陶瓷的烧结温度逐渐下降,并且具有高介电常数。其中,添加10?B后的CSLLT陶瓷其烧结温度从1 300℃显著下降到1 050℃,且在微波频率下具有如下介电性能:ε=77.3、Qf=4 735 GHz;τf=-48.1×10-6/℃(1 MHz)。     

Microwave Dielectric Properties of CuO-V<Subscript>2</Subscript>O<Subscript>5</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-Doped ZnNb<Subscript>2</Subscript>O<Subscript>6</Subscript> Ceramics with Low Sintering Temperature

Microwave dielectric properties of low temperature sintering ZnNb₂O₆ ceramics doped with CuO-V₂O₅-Bi₂O₃ additions were investigated systematically. The co-doping of CuO, V₂O₅ and Bi₂O₃ can significantly lower the sintering temperature of ZnNb₂O₆ ceramics from 1150 to 870C. The secondary phase containing Cu, V, Bi and Zn was observed at grain boundary junctions, and the amount of secondary phase increased with increasing CuO-V₂O₅-Bi₂O₃ content. The dielectric properties at microwave frequencies (7–9 GHz) in this system exhibited a significant dependence on the relative density, content of additives and microstructure of the ceramics. The dielectric constant ( _r) of ZnNb₂O₆ ceramics increased from 21.95 to 24.18 with increasing CuO-V₂O₅-Bi₂O₃ additions from 1.5 to 4.0 wt%. The quality factors (Q× f) of this system decreased with increasing CuO-V₂O₅-Bi₂O₃ content and ranged from 36118 to 67100 GHz for sintered ceramics, furthermore, all Q× f values of samples with CuO-V₂O₅-Bi₂O₃ additions are lower than that of un-doped ZnNb₂O₆ ceramics sintered at 1150C for 2 h. The temperature coefficient of resonant frequency ( _f) changed from –33.16 to –25.96 ppm/C with increasing CuO-V₂O₅-Bi₂O₃ from 1.5 to 4.0 wt%     

富钛 BaO-TiO2系微波介质陶瓷的物相分析

探讨了富钛BaO_TiO2(Ti/Ba=4~4.5)系微波介质陶瓷成分以及预烧温度对物相组成的影响。分析表明,当预烧温度为900℃时,已经有一定量的BaTi4O9相生成,但是主相仍为BaTiO3;随着预烧温度的升高,主相转变成BaTi4O9,而BaTiO3和TiO2逐渐减少直至消失;到1 200℃时,都形成了BaTi4O9单相。同时发现TiO2能促进BaTi4O9相的形成。此外,在研究的成分中都没有形成Ba2Ti9O20相。     

Dielectric and Ferroelectric Characterization of Na(Ta,Nb)O<Subscript>3</Subscript> Solid Solution Ceramics

Ceramics in the Na(Ta_{1 − x}Nb_x)O₃ system were prepared by a solid state reaction approach, and their dielectric characteristics were evaluated together with the structures. The complete solid solution with orthorhombic structures was observed in the present system, and three supposed phase transitions at about 475, 580 and 650^∘C were observed by DTA. Only one dielectric anomaly was observed at high temperature for x = 0.2 and 0.4, and alternative dielectric anomaly (a diffused dielectric peak) was observed around 170 and 380^∘C for x = 0.6 and 0.8, respectively. The compositions of 0.6 and 0.8 are weakly ferroelectric and those of 0.2 and 0.4 are supposed to be antiferroelectric at room temperature.     

Effect of CeO2 and Nd2O3 on the Microstructure and Microwave Dielectric Properties of (Zr0.8,Sn0.2)TiO4 Ceramics

(Zr_0.8,Sn_0.2)TiO₄ (ZST) ceramics were prepared by solid-state reaction method with 1 wt% ZnO and 0.5–1.5 wt% CeO₂ or Nd₂O₃ as sintering aids. The effect of processing parameters and additive concentration on the structure, microstructure and microwave dielectric properties of ZST ceramics were investigated. The dielectric constant (?_r) and temperature coefficient of the resonance frequency (τ_f) were not significantly affected by the addition of these additives. The unloaded quality factors (Q_u) were effectively promoted by CeO₂ and Nd₂O₃ additions. ?_r values of 40 and 38.3, Qxf_o values of 57,500 and 59,300 were obtained for the samples sintered with 1.5 and 0.5 wt% of CeO₂ and Nd₂O₃ respectively. The improvement in Qxf_o value is primarily attributed to the increase in uniform grain size and density.     

Microwave Dielectric Properties of Ferroelectric BaTiO3 Thin Film

The dielectric properties of c-axis epitaxial BaTiO₃ thin film on LaAlO₃ are investigated at frequencies of 0.5–30 GHz. For the measurements, interdigital capacitors with the Au/Ti electrode configurations of five fingers pairs that are 15 m wide and spaced 2 m apart are prepared by photolithography and lift-off patterning. Finger length varies from 20 to 80 m. The capacitance of epitaxial BaTiO₃ films exhibited no frequency dependence up to 10 GHz with the exception of slightly upward tendency of capacitance in BaTiO₃ film with a finger length of 80 m due to the self resonant frequency at 20 GHz. The Q-factors of the capacitors, defined as Q = 1/CR, are decreased up to 10 GHz with increased frequency. At 10 GHz, the BaTiO₃ film has a tunability [defined as k(V) = [C(0)–C(V)]C(0)] of 1.5% at 15 V, a loss tangent of 0.2 at room temperature. The small tunability can be interpreted as a result of in-plane compressive stress of BaTiO₃ film exhibiting large dielectric anisotropy. For the improvement of tunability and dielectric loss in the interdigital BaTiO₃ capacitor, the tetragonality (c/a) of epitaxial BaTiO₃ film and design of interdigital capacitor should be modified.     

Processing Effects on the Microstructure and Dielectric Properties of Barium Strontium Titanate (BST) Ceramics

Barium Strontium Titanate (BST) ferroelectric thick films have been investigated as potential candidates for use in frequency agile microwave circuit devices. Powder processing techniques such as screen-printing have been used to make BST thick films. However, due to the interactions between the BST and substrates such as alumina, the sintering temperatures for the BST thick films are limited and the resultant films are difficult to achieve full densification. In this paper, the effects of different powder processing conditions (calcination, sintering temperature and time) on the sintering behaviour and dielectric properties of the BST ceramics have been investigated. The dielectric behaviour of the ceramics has been correlated with composition and microstructural features such as chemical homogeneity, grain size and domain wall movements.     

Microwave dielectric properties of B2O3-added Li2MgTiO4 ceramics for LTCC applications

Li₂MgTiO₄ (LMT) ceramics which are synthesized using a conventional solid-state reaction route. The LMT ceramic sintered at 1250°C for 4 h had good microwave dielectric properties. However, this sintering temperature is too high to meet the requirement of low-temperature co-fired ceramics (LTCC). In this study, the effects of B₂O₃ additives and sintering temperature on the microstructure and microwave dielectric properties of LMT ceramics were investigated. The B₂O₃ additive forms a liquid phase during sintering, which decreases the sintering temperature from 1250°C to 925°C. The LMT ceramic with 8 wt% B₂O₃ sintered at 925°C for 4 h was found to exhibit optimum microwave dielectric properties: dielectric constant 15.16, quality factor 64,164 GHz, and temperature coefficient of resonant frequency -28.07 ppm/°C. Moreover, co-firing of the LMT ceramic with 8 wt% B₂O₃ and 20 wt% Ag powder demonstrated good chemical compatibility. Therefore, the LMT ceramics with 8 wt% B₂O₃ sintered at 925°C for 4 h is suitable for LTCC applications.     

微波烧结高介电常数钛酸钡复合材料的研究

分别采用微波烧结和传统烧结的方法对钛酸钡复合材料进行烧结。从微观结构、烧结后样品的收缩率、样品的电容以及介质损耗因数等几个方面进行了比较分析。结果表明：微波烧结比传统烧结得到的样品具有更致密、更均匀的微观结构。微波烧结对样品线性收缩率终值影响不大,但会增强烧结密度,使开始收缩温度降低20～25℃,得到的样品具有更小的介质损耗。     

Dielectric Characteristics and Tunability of Barium Stannate Titanate Ceramics

Ba(Ti_{1 –x} Sn _x )O₃ solid solutions were prepared by a solid state reaction method, and their dielectric and tunable characteristics were investigated together with the microstructures and diffused phase transition behaviors. The dielectric relaxation behaviors were observed and became stronger with increasing x.The obvious field dependence of the present system was observed with high dielectric constant and low loss at relatively lower DC electric field. The excellent tunable dielectric characteristics were achieved for x= 0.15 at room temperature: tunability 56%, tan 0.003 at 10 kHz under 7.6 kV/cm, indicating that it is a promising candidate for electric-field tunable dielectrics working at room temperature.     

Co-Modification of Ba5NdTi3Ta7O30 Dielectric Ceramics by Substitution and Introducing Secondary Phase

Co-modification of Ba₅NdTi₃Ta₇O₃₀ dielectrics ceramics was investigated through Pb substitution for Ba and introducing Bi₄Ti₃O₁₂ secondary phase. The dielectric constant increased from 150 to 283, the temperature coefficient of the dielectric constant decreased from –2500 ppm/°C to –1279 ppm/°C, and the dielectric loss decreased to 0.0007 at 1 MHz. Meanwhile, the bi-phase ceramics were investigated to achieve temperature stable ceramics with high dielectric constant and low dielectric loss. As the composition x varied from 0.4 to 0.7 for (1 – x)(Ba_0.8Pb_0.2)₅NdTi₃Ta₇O₃₀/xBi₄Ti₃O₁₂, the temperature coefficient of the dielectric constant changed from negative to zero to positive.     

Development of Translucent Aluminum Nitride (AIN) Using Microwave Sintering Process

Pure aluminum nitride (AIN) has been successfully sintered to highly translucent form by microwave sintering at 1850°C with a dwelling time of 30–60 minutes. The results showed that the sintering temperature should be at least 1850°C or higher to get reasonable translucency in the AIN sample by the microwave sintering process. On the other hand, the conventional sintering method requires much longer sintering time to obtain a translucent AIN ceramics.     

Processing and Electrical Properties of 0.5Pb(Yb1/2Nb1/2)O3-0.5PbTiO3 Ceramics

Pb(Yb_1/2Nb_1/2)O₃-PbTiO₃ ceramics at the morphotropic phase boundary (50:50) were sintered by conventional and reactive methods to 95% theoretical density and grain sizes <10 m. Excess PbO, added to enhance the densification, resulted in PbO-based non-ferroelectric phases that degraded the electrical properties. Volatilization of excess PbO by annealing the samples after sintering resulted in dense, perovskite samples and excellent electrical properties. The best electrical properties, obtained via reactive sintering, were a remanent polarization, P _r, of 0.36 C/m², a maximum dielectric constant of 31,000 (at the T _c = 371°C and 1 kHz), a piezoelectric charge coefficient, d ₃₃, of 508 pC/N, and an electromechanical coupling coefficient, k ₃₃, of 0.61.     

Temperature Dependence of Microwave and THz Dielectric Response in Srn + 1TinO3n + 1 (n = 1–4)

The microwave, near-millimetre and infrared (IR) dielectric response of Sr_{n + 1}Ti_nO_{3n + 1} (n = 1–4) Ruddlesden-Popper homologous series was studied in the temperature range 10 to 300 K. Remarkable softening of the polar optical mode was observed in Sr₄Ti₃O₁₀ and Sr₅Ti₄O₁₃ which explains the increase in microwave permittivity and dielectric loss upon cooling. However, both samples have a distinct content of SrTiO₃ dispersed between SrO layers. It is proposed therefore that the observed soft mode originates from the SrTiO₃ microscopic inclusions.