氮化硅陶瓷烧结过程中玻璃相的自动析晶

发现了Ｓｉ３Ｎ４ＭｇＯＣｅＯ２系陶瓷在烧结过程中玻璃相自动析晶现象。对于Ｓｉ３Ｎ４ＭｇＯＣｅＯ２系陶瓷,在１４５０℃,ＭｇＯＣｅＯ２与Ｓｉ３Ｎ４颗粒表面的ＳｉＯ２反应形成硅酸盐液相,冷却后成为玻璃相保留在烧结体中;当烧结温度高于１５５０℃时,发现ＣｅＯ２仍留在玻璃相中,但ＭｇＯ会自动析晶出来,其结果是大大减少了烧结体中严重影响其高温性能的玻璃相的含量,ＭｇＯＣｅＯ２是氮化硅陶瓷很理想的烧结助剂。     

微量Sc和Zr对Al—Mg合金铸态组织的晶粒细化作用

制备了Ａｌ５Ｍｇ、Ａｌ５Ｍｇ０．２Ｓｃ、Ａｌ５Ｍｇ０．１Ｚｒ和Ａｌ５Ｍｇ０．２Ｓｃ０．１Ｚｒ四种铸态合金，采用金相显微镜和扫描电镜观察分析了微量Ｓｃ和Ｚｒ对ＡｌＭｇ合金铸态组织的晶粒细化作用及其机理。结果发现，０２％的Ｓｃ并未使ＡｌＭｇ合金产生晶粒细化作用，而０２％的Ｓｃ与０１％的Ｚｒ复合添加则使ＡｌＭｇ合金产生了极其强烈的晶粒细化作用。这一作用的产生，是由于Ｓｃ、Ｚｒ与Ａｌ在合金熔体中生成了Ａｌ３Ｓｃ和Ａｌ３Ｚｒ复合粒子，这种粒子在合金凝固过程中，起到了非均质晶核细化晶粒的作用     

颗粒增强Al－4％Mg复合材料中显微孔隙的分析

探讨了Ａｌ２Ｏ３、ＳｉＣ、ＳｉＯ２等三种颗粒增强Ａｌ－４％Ｍｇ复合材料凝固组织中显微孔隙的形成规律．结果表明：前者显微孔隙是由Ａｌ２Ｏ３颗粒加入导致熔体粘度增加、颗粒堵塞枝晶间的补缩流动通道以及颗粒与基体合金的热膨胀系数的差异三种因素所引起；第二种材料由于气孔易在ＳｉＣ颗粒表面形核，或者ＳｉＣ颗粒与基体结合较弱，使得该复合材料比前者易形成显微孔隙；第三种复合材料，是由于ＳｉＯ２颗粒与基体间发生了界面反应，一定量的Ｓｉ溶入了基体，增大了基体的凝固潜热，从而提高了基体合金凝固时的补缩流动能力，所以ＳｉＯ２ｐ／Ａｌ－４％Ｍｇ复合材料的凝固组织比同样条件下Ａｌ２Ｏ３ｐ／Ａｌ－４％Ｍｇ和ＳｉＣｐ／Ａｌ－４％Ｍｇ复合材料致密。     

MgO─CeO2烧结助剂对常压烧结氮化硅陶瓷致密化和性能的影响

系统研究了ＭｇＯＣｅＯ２烧结助剂对常压烧结氮化硅陶瓷致密化过程及其性能的影响，发现ＭｇＯＣｅＯ２是一种非常有效的烧结助剂，其致密化效果比单独用ＭｇＯ或ＣｅＯ２要好得多，常压烧结的Ｓｉ３Ｎ４ＭｇＯＣｅＯ２陶瓷，相对密度为９８．５％，室温强度可达９４８ＭＰａ。     

Gr（C）／Mg复合材料纤维分布均匀性及其改善途径

纤维表面经ＳｉＯ２、Ａｌ２Ｏ３涂层处理，可以改善纤维与Ｍｇ合金熔体的润湿性能，显著降低浸渗时充型压力，使纤维分布均匀性明显改善。ＳｉＣ颗粒混杂改善了纤维分布状况，在一定程度上消除了低应力破坏的可能性，使弯曲强度提高了２０％以上。     

热法镁锭中硅的由来及脱除

介绍硅热法炼镁时，由于原料中的ＳｉＯ２ 与Ｓｉ 在还原过程中的化学作用生成Ｍｇ２Ｓｉ 以及机械夹杂物（ＳｉＯ２、Ｓｉ），是结晶镁中硅量增高的原因。采用含ＭｇＦ２ 熔剂在熔剂精炼条件下的脱硅方法。     

SOLIDIFICATION PROCESS OF α(Al)-Mg_2Ge PSEUDOBINARY EUTECTIC ALLOYS

ＳＯＬＩＤＩＦＩＣＡＴＩＯＮＰＲＯＣＥＳＳＯＦα（Ａｌ）Ｍｇ２ＧｅＰＳＥＵＤＯＢＩＮＡＲＹＥＵＴＥＣＴＩＣＡＬＬＯＹＳ①ＺｈａｏＳｈｅｎｇｘｕ,ＬｉＳｈｕｎｐｕ,ＺｈａｏＤｅｑｉａｎ,ＰａｎＭｉｎｇｘｉａｎｇａｎｄＣｈｅｎＸｉｃｈｅｎＩｎｓｔｉｔｕ...     

氮化硅陶瓷烧结过程中的致密化与相变

讨论了Ｓｉ３Ｎ４ＭｇＯＣｅＯ２陶瓷常压烧结过程中的致密化与相变。指出：对于Ｓｉ３Ｎ４ＭｇＯＣｅＯ２陶瓷，在１５００～１５５０℃为快速致密化阶段，在１５５０℃致密化过程已接近完成，αＳｉ３Ｎ４→βＳｉ３Ｎ４的相转变过程滞后于致密化过程，在１５５０～１６００℃为β相转变百分数急剧增加阶段，在１６００℃，α→β相变接近完成，α→β相变与其致密化并无直接、必然的关系     

融熔Cu-S/CaO-SiO2-Al2O3体系界面脱硫反应动力学的阻抗分析

用交流阻抗法研究了融熔ＣｕＳ／ＣａＯＳｉＯ２Ａｌ２Ｏ３体系界面脱硫反应动力学，得到了该体系的阻抗响应图。通过用Ｒａｎｄｌｅｓ等效电路，并将所得的阻抗用非线性最小二乘法拟合，获得ＣｕＳ／ＣａＯＳｉＯ２Ａｌ２Ｏ３体系界面脱硫反应动力学的参数，如熔渣电阻Ｒｅ，电极反应电荷传递电阻Ｒｃｔ，电极双电层电容Ｃｄｌ及脱硫反应速率常数ｋｆ等。     

颗粒增强Al—4%Mg复合材料中显微孔隙的分析

探讨了Ａｌ２Ｏ３、ＳｉＣ、ＳｉＯ２等三种颗粒增强Ａｌ－４％Ｍｇ复合材料凝固组织中显微孔隙的形成规律。结果表明：前者显微孔隙是由Ａｌ２Ｏ３颗粒加入导致熔体粘度增加、颗粒堵塞枝晶间的补缩流动通道以及颗粒与基体合金的热膨胀系数的差异三种因素所引起；第二种材料由于气孔易在ＳｉＣ颗粒表面形核，或者ＳｉＣ颗粒与基体结合较弱，使得该复合材料比前者易形成显微孔隙；第三种复合材料，是由于ＳｉＯ２颗粒与基体间发生了界     

Fabrication of SiC particle dispersed spheroidal graphite cast iron composite by vacuum assisted casting and its microstructure

Abstract

SiC particle preforms were infiltrated with spheroidal graphite cast iron melt by vacuum assisted casting in the sand mould, and spheroidal graphite cast iron composites in which the particles were dispersed in the surface region were fabricated. Although the melt infiltration was not accomplished when the melt was poured under atmospheric pressure, the infiltration was accomplished by the vacuum assisted casting when the SiC particle volume fraction and preform thickness were optimised. When the Si content of the cast iron was 2˙5 mass%, the phase consisting of mainly Fe₃Si was formed at the particle/matrix interface due to the reaction between the cast iron melt and the particles during the infiltration. The matrix of the composite consisted of fine spheroidal graphite particles, ferrite, pearite and chill crystal. Although the increase in the Si content suppressed the reaction and chill, no infiltrated area was observed in the composite.     

Mg2Si含量对过共晶Al-Si复合材料组织及性能的影响

用直接熔体反应法制备了Mg2Si增强过共晶Al-Si合金复合材料,研究了Mg2Si含量对复合材料的凝固组织和性能的影响.结果表明,Mg2Si的形貌随着其含量的增加而明显变化,由多边形块状向颗粒状转变,最终转变成粗大的树枝状.复合材料的硬度和耐磨性能与初生Mg2Si相的形态和数量有一定关系.     

Morphology and formation of Fe–Al intermetallic layers on iron hot-dipped in Al–Mg–Si alloy melt

We have examined the morphology and the growth of Fe–Al intermetallic layers of η-Fe₂Al₅ and θ-FeAl₃ phases formed on pure Fe sheets dipped in an Al-8.2Mg-4.8Si (wt.%) alloy melt and pure Al melt at 750 °C. The η phase layer grows one order of magnitude slower in the Al–Mg–Si alloy melt than in the pure Al melt. The change in thickness of Fe sheets with dipping time is less pronounced in the Al–Mg–Si alloy melt than in a pure Al melt. Microstructure observations suggest that the retarded interfacial reaction between solid Fe and liquid Al–Mg–Si alloy is associated with a continuous θ phase layer formed in the Al–Mg–Si alloy melt, which acts as the diffusion barrier.     

Centrifugal casting processes of manufacturing in situ functionally gradient composite materials of Al-19Si-5Mg alloy

Cylindrical components of in situ functionally gradient composite materials of Al-19Si-5Mg alloy were manufactured by centrifugal casting. Microstructure characteristics of the manufactured components were observed and the effects of the used process factors on these character-istics were analyzed. The results of observations shows that, in thickness, the components possess microstructures accumulating lots of Mg2Si particles and a portion of primary silicon particles in the inner layer, a little Mg2Si and primary silicon particles in the outer layer, and without any Mg2Si and primary silicon particle in the middle layer. The results of the analysis indicate that the rotation rate of centrifugal casting, mould temperature, and melt pouring temperature have evidently affected the accumulation of the second phase particles. Also, the higher the centrifugal rotation rate, mould temperature, and melt pouring temperature are, the more evident in the inner layer the degree of accumulation of Mg2Si and primary silicon particles is.     

Mg2B2O5晶须增强镁基复合材料的组织与界面结构研究

采用光学显微镜、透射电子显微镜和X射线衍射仪研究Mg2B2O5晶须增强镁基复合材料的铸态组织及Mg2B2O5/AZ91D界面反应产物。结果表明:Mg2B2O5晶须具有孪晶结构,其孪生面和晶体生长方向分别为(202)和[010];部分Mg2B2O5晶须中存在MgB4O7颗粒相;在基体晶界与Mg2B2O5晶须之间存在等轴状Mg2Si相;Mg2B2O5/AZ91D界面处存在厚度不均匀的MgO和MgB2相界面层。尽管Mg2B2O5、MgO和MgB2之间没有确定的晶体学位相关系,但在特定Mg2B2O5晶须表面观察到(202)Mg2B2O5//(002)MgO,[010]Mg2B2O5//[110]MgO和(002)MgO//(0001)MgB2,[110]MgO//[2110]MgB2取向关系。最后,讨论Mg2B2O5晶须对复合材料组织结构和性能的影响。     

Mg添加量对粉末冶金法制备泡沫铝材料过程中AlSi7基合金发泡行为的影响

本文研究了高镁添加量(2wt%, 4wt%, 6wt%)对AlSi7基合金发泡行为的影响。研究结果表明：镁可以和Al粉表层的氧化物Al2O3以及添加的硅发生反应,生成和铝熔体具有良好润湿性的MgAl2O4相以及Mg2Si相,这两相均能均匀的分布在泡沫体中以颗粒稳定机理,减小重力和毛细排液,起到稳定泡体的作用。高镁添加量最重要的作用是改变泡沫体的早期形核、长大方式,使泡体在液态熔池中以圆形孔的方式稳定的形核和长大,所以高镁添加量的泡沫体可以得到高的膨胀率和良好的孔结构。但镁添加量过高时,熔体表面张力降低,泡体很容易破裂,反而会使泡沫体的最大膨胀体积降低、孔结构恶化,综合利弊,本论文得出的AlSi7基合金的最优镁添加量为4wt%。     

镁合金金属型高铝矾土涂料阻燃性的研究

研究了镁合金金属型高铝矾土涂料的阻燃性。结果表明,合金液和高铝矾土容易在模具浇道处发生化学反应而导致涂料失效,反应产物为Mg2Al3和Mg2Si。阻燃剂可以减弱镁合金液与高铝矾土的反应,涂料的使用时间随着阻燃剂的增加而延长,试验中阻燃剂的最佳加入量为6%。     

Interfacial microstructure of 20% SO2/Al matrix composites reinforced with in situ formation ceramic phases

Al matrix composites reinforced with in situ ceramic phases by adding 20% SiO2 were fabricated by powder metallurgy process.The interfacial microstructure of the composites was studied by means of SEM and HREM.It was shown that the ceramic phases mainly composed of spinel MgAl2O4 are formed in situ in the original SiO2 particle and the size of small MgAl2O4 crystallites is about dozens of nanometers,which can adjacent to Al and Si.MgO could not found in original SiO2 particle but a little in matrix and may exist with Si,Mg2Si and Al.Si is mostly distributed in matrix and forms some segregation zones.The size of Mg2Si is about 50-100nm and can usually be seen in the matrix.     

Preparation of Al-Al3Ti in situ composites by direct reaction method

Al-Al3Ti composites were prepared by a direct reaction method, in which Al3Ti was formed by the reaction of Ti and Al in aluminum alloy melt. The morphology of Al3Ti changes apparently from the fine particle, needle-like to large block with the increase of Al3Ti content. The addition of magnesium can markedly change the morphology of Al3Ti and reduce their size. Short rod-like Al3Ti was formed and homogeneous distribution was obtained with the addition of 3 wt.% Mg. The effect of Al3Ti and Mg on the microstructure of Al-Al3Ti composites and the mechanism were also discussed.     

Al-Mg-Si合金中Mg_2Si和Si粒子在晶间腐蚀过程中的作用机理

研究Al-Mg-Si合金晶界组成相（Al-Mg2Si及Al-Mg2Si-Si）间的电化学行为和动态电化学耦合行为,提出Al-Mg-Si合金的晶间腐蚀机理。研究表明,晶界Si的电位比其边缘Al基体的正,在整个腐蚀过程中作为阴极导致其边缘Al基体的阳极溶解;晶界Mg2Si的电位比其边缘Al基体的负,在腐蚀初期作为阳极发生阳极溶解,然而由于Mg2Si中活性较高的元素Mg的优先溶解,不活泼元素Si的富集,致使Mg2Si电位正移,甚至与其边缘Al基体发生极性转换,导致其边缘Al基体的阳极溶解。当n（Mg）/n（Si）〈1.73时,随着腐蚀的进行,合金晶界同时会有Mg2Si析出相和Si粒子,腐蚀首先萌生于Mg2Si相和Si边缘的无沉淀带,而后,Si粒子一方面导致其边缘无沉淀带严重的阳极溶解,另一方面加速Mg2Si和晶界无沉淀带的极性转换,从而促使腐蚀沿晶界Si粒子及Mg2Si粒子边缘向无沉淀带发展。