Silicon-based optoelectronics

The decade of the 1990's is an opportune time for scientists and engineers to create cost-effective silicon “superchips” that merge silicon photonics with advanced silicon electronics on a silicon substrate. We can expect significant electrooptical devices from Column IV materials (Si, Ge, C and Sn) for a host of applications. The best devices will use strained-layer epitaxy, doped heterostructures, and bandgap engineering of quantum-confined structures. This paper reviews Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic     

降低超高频电光调制功率的一种新方法

本文提出根据超高频谐振腔的电场分布特性和利用ＤＫＤＰ（或ＫＤＰ）晶体纵向调制的性质￣［１］，巧妙地把Ｚ切割ＤＫＤＰ（或ＫＤＰ）晶体放置在谐振腔内高阻区，从而实现低功率下对激光或普通单色光进行超高频（５００ＭＨｚ～６６０ＭＨｚ）调制与解调，激励功率可降低１／２或更低。对超高精度激光测距，大功率激光主动锁模和光通讯等均有广泛的应用前景。     

Femtosecond excitonic optoelectronics

The authors discuss a novel approach to femtosecond optoelectronics which uses the excitonic response to electric fields as a detector and the excitonic nonlinear response to optical fields as a generator. The sensitivity of the quantum-well exciton to applied electric fields is used to measure electrical transients with femtosecond time resolution. The authors examine several mechanisms for femtosecond electrical pulse generation, including exciton ionization and two-photon absorption, and present measurements of the propagation properties of coplanar striplines on ultrathin semiconductor substrates in the 1-100-THz frequency range. The generation and detection of an electrical pulse with a 180-fs risetime propagating on a coplanar stripline on GaAs/AlGaAs quantum wells are demonstrated     

GaAs integrated optoelectronics

Monolithic integrated optoelectronic circuits, which incorporate electronic and optical devices on the same substrate, have the advantages of smaller size, and potentially higher reliability compared with conventional hybrid circuits. In addition, significant improvements in the speed and noise performance of communication systems can be realized. This paper reviews the various elements which constitute the integrated optoelectronic circuits (IOEC's) with emphasis on the structure of GaAlAs injection lasers. Several integrated circuits on GaAs substrates are described in detail. A view of optoelectronic circuits in other III-V compounds is presented.     

硅基光电子学中的SOI材料

SOI材料是近年来应用于硅基光电子学中的一种重要的光波导材料。本文首先简要介绍了常见的SOI材料的制备方法,包括注氧隔离（SIMOX-SOI）、硅键合背面腐蚀（BE-SOI）和注氢智能剥离（Smart Cut）等,并比较了它们各自的特点和优劣。其次介绍了SOI材料加工制造波导的基本工艺,包括光刻和刻蚀,其中刻蚀又分为干法刻蚀和湿法腐蚀。     

SOI材料在光电子学中的应用

SOI材料是应用于硅基光电子学中的一种重要的光波导材料。近年来随着SOI材料制备和加工技术的成熟,SOI基光波导器件的研究日益受到人们的重视。文章介绍了SOI材料在光电子学领域的一些具体应用,包括了在热光器件、电光器件、亚微米波导器件与光纤的耦合器以及光电子集成芯片等方面的最新研究进展。更小的波导截面尺寸是未来SOI光波导器件发展的必然趋势。     

Wafer-fused optoelectronics for switching

Wafer fusion technique for realization of compact waveguide switches and three-dimensional (3-D) photonic integrated circuits is investigated theoretically and experimentally. Calculations based on beam propagation method show that very short vertical directional couplers with coupling lengths from 40 to 220 μm and high extinction ratios from 20 to 32 dB can be realized. These extinction ratios can be further improved using a slight asymmetry in waveguide structure. The optical loss at the fused interface is investigated. Comparison of the transmission loss in InGaAsP-based ridge-loaded waveguide structures with and without a fused layer near the core region, reveals an excess loss of 1.1 dB/cm at 1.55 μm wavelength. Fused straight vertical directional couplers have been fabricated and characterized. Waveguides separated by 0.6 μm gap layer exhibit a coupling length of 62 μm and a switching voltage of about 2.2 V. Implications for GaAs-based fused couplers for 850 nm applications will also be discussed     

Two-dimensional silicon nanomaterials for optoelectronics

Silicon nanomaterials have been of immense interest in the last few decades due to their remarkable optoelectronic responses, elemental abundance, and higher biocompatibility. Two-dimensional silicon is one of the new allotropes of silicon and has many compelling properties such as quantum-confined photoluminescence, high charge carrier mobilities, anisotropic electronic and magnetic response, and non-linear optical properties. This review summarizes the recent advances in the synthesis of two-d...     

A wider vision of optoelectronics

The author points out that optoelectronics has a far wider meaning and applications than optical communications. The technology of storing, displaying and printing images is in the domain of optoelectronics. The author describes the technology involved in these three areas. The images are stored on disc. They are encoded in the form of 1 μm marks which are created by using a laser. The different types of display, how they work, and the prospects for each type of screen are discussed. This area is the one that presents the biggest challenge to the optoelectronics industry. The different types of printer are briefly reviewed and the D2T2 (dye diffusion thermal transfer) printer described in more detail     

Photonics West展览会展出了许多正在开发中的光电子产品

Photomics West展览会已经成为展示光学产品,激光产品,生物医学用光学产品,以及图像成像技术的最大的商业展览会。光能技术正在改变当今世界。今年1月19到25日,San Jose的会议中心将举办Photonics West展览会,届时光学产业将成为人们关注的焦点。     

从CLEO‘97会议看光电子学进展

综述了ＣＬＥＯ‘９７（国际激光器和光电子学会议）情况，扼要描述光电子学领域的重要进展，着重介绍半导体光电子学的新进展，包括大功率无铝半导体激光器、红光ＩｎＧａｎ发光二极管和激光器、量子级联激光器等。     

硅基光电子在通信中的应用和挑战

硅基光电子技术拥有光的宽带、高速和抗干扰特性以及微电子技术在大规模集成、低能耗、低成本等方面的优势。最近十年,硅基光电子技术开始进入通信产业领域,在800 Gbit/s以上的高速短距应用场景中发挥优势,对传统磷化铟（InP）的通信光模块形成挑战。浅谈硅基光电子技术在通信中的应用和发展,同时简要介绍硅基光电子技术在应用中的一些挑战。解决器件性能、封装技术、自动化软件等方面的不足,才能实现硅基光电子技术长足发展。     

Some aspects of the theory and measurement of frequency fluctuations in frequency standards

Precision quartz oscillators have three main sources of noise contributing to frequency fluctuations: thermal noise in the oscillator, additive noise contributed by auxiliary circuitry such as AGC, etc., and fluctuations in the quartz frequency itself as well as in the reactive elements associated with the crystal, leading to an f^-1type of power spectral density in frequency fluctuations. Masers are influenced by the first two types of noise, and probably also by the third. The influence of these sources of noise on frequency fluctuation vs. averaging time measurements is discussed. The f^-1-spectral density leads to results that depend on the length of time over which the measurements are made. An analysis of the effects of finite observation time is given. The characteristics of both passive and active atomic standards using a servo-controlled oscillator are discussed. The choice of servo time constant influences the frequency fluctuations observed as a function of averaging time and should be chosen for best performance with a given quartz oscillator and atomic reference. The conventional methods of handling random signals, i.e., variances, autocorrelation, and spectral densities, are applied to the special case of frequency and phase fluctuations in oscillators, in order to obtain meaningful criteria for specifying oscillator frequency stability. The interrelations between these specifications are developed in the course of the paper.