Flip-chip packaging solution for CMOS image sensor device

Chip scaled opto-electronic packaging is introduced as a cost and size effective packaging solution for mobile phone with built in camera. The chip scaled assembly includes gold bumped CMOS image sensor device and its flip-chip bonding on substrate using the anisotropic conductive material. Two types of flip-chip module were designed to have flip-chip on flex and flip-chip on glass. It is shown that well controlled bumping process of thin film deposition and wet etching gives no damage to image sensing surface during the deposition and stripping of metal film. As results, smart and high degree miniaturized image sensor module is actualized for mobile phone and the reliability test results proved the robustness of module structure having flip-chip. Solder bumping was also reviewed and successfully introduced to verify the alternative of image sensor bumping.     

Study of package warp behavior for high-performance flip-chip BGA

To meet the future needs of high pin count and high performance, the LSI die and package size of flip-chip BGA (FC-BGA) devices have become larger. As a result, package warpage due to mismatch of the coefficients of thermal expansion among the construction materials has become a more serious problem for package reliability. In this paper, package warpage is successfully measured by a 3-D surface profile method in the temperature range from −55 to 230 °C. Furthermore, the package warpage of FC-BGA was investigated to clarify the effect of the thermomechanical properties of the underfill resin. Based on the results, we constructed a model of the mechanism of package warpage. This paper proposes an optimized underfill resin that can achieve low package warpage and a long fatigue life of the solder bump. The future trends in underfill resin will be to have properties of extremely low elastic modulus and non-linear properties such as creep.     

Material properties of anisotropic conductive films (ACFs) and their flip chip assembly reliability in NAND flash memory applications

In this paper, the material properties of anisotropic conductive films (ACFs) and ACF flip chip assembly reliability for a NAND flash memory application were investigated. Measurements were taken on the curing behaviors, the coefficient of thermal expansion (CTE), the modulus, the glass transition temperature (T_g), and the die adhesion strength of six types of ACF. Furthermore, the bonding processes of the ACFs were optimized. After the ACF flip chip assemblies were fabricated with optimized bonding processes, reliability tests were then carried out. In the pressure cooker test, the ACF with the highest adhesion strength showed the best reliability and the ACF flip chip assembly revealed no delamination at the chip-ACF interface, even after 96 h. In the high temperature storage test and the thermal cycling test, the reliability of the ACF flip chip assembly strongly depends on the T_g value of the ACF. In the thermal cycling test, in particular, which gives ACF flip chip assemblies repetitive shear stress, high value of CTE above T_g accelerates the failure rate of the ACF flip chip assembly. From the reliability test results, ACFs with a high T_g and a low CTE are preferable for enhancing the thermal and thermo-mechanical reliability. In addition, a new double-sided chip package with a thickness of 570 μm was demonstrated for NAND flash memory application. In conclusion, this study verifies the ACF feasibility, and recommends the optimum ACF material properties, for NAND flash memory application.     

Reduced thermal strain in flip chip assembly on organic substrateusing low CTE anisotropic conductive film

Flip chip assembly directly on organic boards offers miniaturization of package size as well as reduction in interconnection distances, resulting in a high performance and cost-competitive packaging method. This paper describes the usefulness of low cost flip-chip assembly using electroless Ni/Au bump and anisotropic conductive films on organic boards such as FR-4. As bumps for flip chip, electroless Ni/Au plating was performed as a low cost bumping method. Effect of annealing on Ni bump characteristics informed that the formation of crystalline nickel with Ni₃P precipitation above 300°C causes an increase of hardness and an increase of the intrinsic stress. As interconnection material, modified ACFs composed of nickel conductive fillers for conductive fillers, and nonconductive fillers for modification of film properties, such as coefficient of thermal expansion (CTE), were formulated for improved electrical and mechanical properties of ACF interconnection. Three ACF materials with different CTE values were prepared and bonded between Si chips and FR-4 boards for the thermal strain measurement using moire interferometry. The thermal strain of the ACF interconnection layer, induced by temperature excursion of 80°C, was decreased according to the decreasing CTEs of ACF materials. This result indicates that the thermal fatigue life of ACF flip chip assembly on organic boards, limited by the thermal expansion mismatch between the chip and the board, could be increased by low CTE ACF     

Procedure for design optimization of a T-cap flip chip package

In this study, a 1/4 three-dimensional finite element model of a T-cap flip chip package containing the substrate, underfill, solder bump, silicon die, metal cap and cap attachment was established to conduct thermo-mechanical reliability study during the flip chip fabrication processes. The applied thermal load was cooled from 183 °C to ambience 25 °C to determine the thermal stress and warpage during the curing period of solder ball mounting process. Under fixed geometry, two levels of underfill, metal caps and cap attachments were used to conduct the 2³ factorial design for determining reliable material combinations. The statistical tests revealed that the significant effects affecting the thermal stress were the underfill, metal cap, cap attachment and the interaction between the underfill and cap attachment. The metal cap, cap attachment and their interaction significantly affected the warpage. The proposed regression models were used to perform the surface response simulations and were useful in selecting suitable materials for constructing the package. This study provides a powerful strategy to help the designer to easily determine reliable packaging structures under various reliability considerations.     

Reliability studies and design improvement of mirror image CSP assembly

In this paper, both simulation and testing techniques were used to address the reliability issue of mirror chip scale package (CSP) assembly. First, finite element modeling was employed to study the stress and strain of a mirror image CSP with comparison to a single-sided CSP. The study clearly illustrates that the strain distribution is not equally distributed across both sides of the CSP. The highest strain on one side of the mirror image CSP is often larger than the other one, which reduced the reliability of the package as a whole. In order to study the effects on the reliability of the mirror image CSP assembly, several parameters, such as PCB board materials selection, board thickness and warpage, PCB via design and routing, were investigated. Moreover, a design of experiment matrix was constructed to identify significant factors to minimize the highest strain in solder joints of mirror image. The test vehicle was then designed and assembled. Thermal cycling (0 to 100 °C) and thermal shock tests were thereafter performed to the mirror image CSPs and single-sided CSPs to compare with the simulation results.     

A study on thermal cycling (T/C) reliability of anisotropic conductive film (ACF) flip chip assembly for thin chip-on-board (COB) packages

In this work, thermal cycling (T/C) reliability of anisotropic conductive film (ACF) flip chip assemblies having various chip and substrate thicknesses for thin chip-on-board (COB) packages were investigated. In order to analyze T/C reliability, shear strains of six flip chip assemblies were calculated using Suhir’s model. In addition, correlation of shear strain with die warpage was attempted.The thicknesses of the chips used were 180 μm and 480 μm. The thicknesses of the substrates were 120, 550, and 980 μm. Thus, six combinations of flip chip assemblies were prepared for the T/C reliability test. During the T/C reliability test, the 180 μm thick chip assemblies showed more stable contact resistance changes than the 480 μm thick chip assemblies did for all three substrates. The 550 μm thick substrate assemblies, which had the lowest CTE among three substrates, showed the best T/C reliability performance for a given chip thickness.In order to investigate what the T/C reliability performance results from, die warpages of six assemblies were measured using Twyman–Green interferometry. In addition, shear strains of the flip chip assemblies were calculated using measured material properties of ACF and substrates through Suhir’s 2-D model. T/C reliability of the flip chip assemblies was independent of die warpages; it was, however, in proportion to calculated shear strain. The result was closely related with material properties of the substrates. The T/C reliability of the ACF flip chip assemblies was concluded to be dominatingly dependent on the induced shear strains of ACF layers.     

Failure mechanism study of anisotropic conductive film (ACF) packages

Anisotropic conductive film (ACF) consists of an adhesive polymer matrix with dispersed conductive particles. In flip-chip technology, ACF has been used in place of solder and underfill for chip attachment to glass or organic substrates. The filler particles establish the electrical contacts between the interconnecting areas. ACF flip-chip bonding provides finer pitch, higher package density, reduced package size and improved lead-free compatibility. Nevertheless, the interconnection is different from traditional solder joints, the integrity and durability of the ACF interconnects have major concerns. Failures in anisotropic conductive film (ACF) parts have been reported after temperature cycling, moisture preconditioning and autoclave. The failures have not been well understood and have been attributed to a wide variety of causes. This paper investigates the failure mechanism of ACF using finite element simulation. From a failure-initiation point of view, the response of ACF packages to environmental (temperature and humidity) exposure is very different from standard underfilled packages. These differences cause the ACF package to fail in different ways from an underfilled package. Simulation results have shown that moisture-induced ACF swelling and delamination is the major cause of ACF failure. With moisture absorption, the loading condition at the interface is tensile-dominant, which corresponds to lower interface toughness (or fracture resistance). This condition is more prone to interface delamination. Therefore, the reliability of ACF packages is highly dependent on the ACF materials. The paper suggests a new approach toward material selection for reliable ACF packages. This approach has very good correlation with experimental results and reliability testing of various ACF materials.     

Computational modelling for reliable flip-chip packaging at sub-100 μm pitch using isotropic conductive adhesives

This paper presents the assembly process using next generation electroformed stencils and Isotropic Conductive Adhesives (ICAs) as interconnection material. The utilisation of ICAs in flip-chip assembly process is investigated as an alternative to the lead and lead-free solder alloys and aims to ensure a low temperature (T < 100 °C) assembly process. The paper emphasizes and discusses in details the assembly of a flip-chip package based on copper columns bumped die and substrate with stencil printed ICA deposits at sub-100 μm pitch. A computational modelling approach is undertaken to provide comprehensive results on reliability trends of ICA joints subject to thermal cycling of the flip-chip assembly based on easy to use damage criteria and damage evaluation. Important design parameters in the package are selected and investigated using numerical modelling techniques to provide knowledge and understanding of their impact on the thermo-mechanical behaviour of the flip-chip ICA joints. Sensitivity analysis of the damage in the adhesive material is also carried out. Optimal design rules for enhanced performance and improved thermo-mechanical reliability of ICA assembled flip-chip packages are finally formulated.     

Effects of bonding temperature on the properties and reliabilities of anisotropic conductive films (ACFs) for flip chip on organic substrate application

The effects of bonding temperatures on the composite properties and reliability performances of anisotropic conductive films (ACFs) for flip chip on organic substrates assemblies were studied. As the bonding temperature decreased, the composite properties of ACF, such as water absorption, glass transition temperature (T_g), elastic modulus (E′) and coefficient of thermal expansion (α), were improved. These results were due to the difference in network structures of cured ACFs which were fully cured at different temperatures. From small angle X-ray scattering (SAXS) test result, ACFs cured at lower temperature, had denser network structures. The reliability performances of flip chip on organic substrate assemblies using ACFs were also investigated as a function of bonding temperatures. The results in thermal cycling test (−55 °C/+150 °C, 1000 cycles) and PCT (121 °C, 100% RH, 96 h) showed that the lower bonding temperature resulted in better reliability of the flip chip interconnects using ACFs. Therefore, the composite properties of cured ACF and reliability of flip chip on organic substrate assemblies using ACFs were strongly affected by the bonding temperature.     

晶圆尺寸级封装器件的热应力及翘曲变形

晶圆尺寸级封装(WLCSP)器件的尺寸参数和材料参数都会对其可靠性产生影响。使用有限元分析软件MSCMarc,对EPS/APTOS生产的WLCSP器件在热循环条件下的热应力及翘曲变形情况进行了模拟,分析了器件中各个尺寸参数对其热应力及翘曲变形的影响。结果表明:芯片厚度、PCB厚度、BCB厚度和上焊盘高度对WLCSP的热应力影响较为明显。其中,当芯片厚度由0.25mm增加到0.60mm时,热应力增加了21.60MPa;WLCSP的翘曲变形主要受PCB厚度的影响,当PCB厚度由1.0mm增加到1.60mm时,最大翘曲量降低了20%。     

Solder reflow process induced residual warpage measurement and its influence on reliability of flip-chip electronic packages

To meet the future needs of high pin count and high performance, package size of flip-chip devices is constrained to become larger. In addition, to fulfill the environment issues, lead free solders will be replacing lead contained eutectic (Sn/37Pb) in near future. Thus, in this work, the effect of residual warpage and consequent residual stress on the reliability of large flip-chip using lead free solder is examined. Several effective experimental approaches to accurately measure residual warpage, using Moiré interferometry, shadow Moiré, and image processing schemes, are introduced. Moreover, geometric, process, and material parameters affecting the residual warpage during reflow process are discussed and some modifications are suggested. Finally, it is verified that it is crucial to accurately quantify and control the residual warpage in order to guarantee the overall reliability of flip-chip packages regardless of presence of underfill.     

Electroless Ni/Au Bump on a Copper Patterned Wafer for the CMOS Image Sensor Package in Mobile Phones

Wafer bumping technology using an electroless Ni/Au bump on a Cu patterned wafer is studied for the flip chip type CMOS image sensor (CIS) package for the camera module in mobile phones. The effect of different pretreatment steps on surface roughness and etching of Cu pads is investigated to improve the adherence between the Cu pad and the Ni/Au bump. This study measures the shear forces on Ni/Au bumps prepared in different ways, showing that the suitable pretreatment protocol for electroless Ni plating on Cu pads is “acid dip followed by Pd activation” rather than the conventional progression of “acid-dip, microetching, and Pd activation.” The interface between the Cu pad and the Ni/Au bump is studied using various surface analysis methods. The homogeneous distribution of catalytic Pd on the Cu pad is first validated. The flip chip package structure is designed, assembled, and tested for reliability. The successful flip chip bonding in the CIS package is characterized in terms of the cross-sectional structure in which the anisotropic conductive film (ACF) particles are deformed to about 1.5 μm in diameter. The experimental results suggest that electroless Ni/Au can be applied to the flip chip type CIS package using Cu patterned wafers for high mega pixel applications.     

Parametric reliability analysis of no-underfill flip chip package

This research proposes a parametric analysis for a flip chip package with a constraint-layer structure. Previous research has shown that flip-chip type packages with organic substrates require underfill for achieving adequate reliability life. Although underfill encapsulant is needed to improve the reliability of flip chip solder joint interconnects, it will also increase the difficulty of reworkability, increase the packaging cost and decrease the manufacturing throughput. This research is based on the fact that if the thermal mismatch between the silicon die and the organic substrate could be minimized, then the reliability of the solder joint could be accordingly enhanced. This research proposes a structure using a ceramic-like material with CTE close to silicon, mounted on the backside of the substrate to constrain the thermal expansion of the organic substrate. The ceramic-like material could reduce the thermal mismatch between silicon die and substrate, thereby enhancing the reliability life of the solder joint. Furthermore, in order to achieve better reliability design of this flip chip package, a parametric analysis using finite element analysis is performed for package design. The design parameters of the flip chip package include die size, substrate size/material, and constraint-layer size/material, etc. The results show that this constraint-layer structure could make the solder joints of the package achieve the same range of reliability as the conventional underfill material. More importantly, the flip chip package without underfill material could easily solve the reworkability problem, enhance the thermal dissipation capability and also improve the manufacturing throughput     

Evaluation and optimization of package processing and design through solder joint profile prediction

Solder joints are generated using a variety of methods to provide both mechanical and electrical connection for applications such as flip-chip, wafer level packaging, fine pitch, ball-grid array, and chip scale packages. Solder joint shape prediction has been incorporated as a key tool to aid in process development, wafer level and package level design and development, assembly, and reliability enhancement. This work demonstrates the application of an analytical model and the Surface Evolver software in analyzing a variety of solder processing methods and package types. Bump and joint shape prediction was conducted for the design of wafer level bumping, flip-chip assembly, and wafer level packaging. The results from the prediction methodologies are validated with experimentally measured geometries at each level of design.     

Effects of underfill materials on the reliability of low-K flip-chip packaging

The reliability of low-K flip-chip packaging has become a critical issue owing to the low strength and poor adhesion qualities of the low-K dielectric material when compared with that of SiO₂ or fluorinated silicate glass (FSG). The underfill must protect the solder bumps and the low-K chip from cracking and delamination. However, the material properties of underfill are contrary to those required for preventing solder bumps and low-K chip from cracking and delamination. This study describes the systematic methodologies for how to specify the adequate underfill materials for low-K flip-chip packaging. The structure of the test vehicle is seven copper layers with a low-K dielectric constant value of 2.7-2.9, produced by the chemical vapor deposition (CVD) process. Initially, the adhesion and the flow test of the underfill were evaluated, and then the low-K chip and the bumps stress were determined using the finite element method. The preliminary screened underfill candidates were acquired by means of the underfill adhesion and flow test, and balancing the low-K chip and the bumps stress simulation results. Next, the low-K chips were assembled with these preliminary screened underfills. All the flip-chip packaging specimens underwent the reliability test in order to evaluate the material properties of the underfill affecting the flip-chip packaging stress. In addition, the failed samples are subjected to failure analysis to verify the failure mechanism. The results of this study indicate that, of the underfill materials investigated, those with a glass transition temperature (T_g) and a Young’s modulus of approximately 70–80 °C and 8–10 GPa, respectively, are optimum for low-K flip-chip packaging with eutectic solder bumps.     

Interconnect resistance characteristics of several flip-chip bumping and assembly techniques

Several flip-chip interconnection methods were compared by measuring interconnect resistance before and after exposure to environments including pre-conditioning, 85°C/85% RH exposure, 150°C storage, and 0–100°C temperature cycling. The goal was to determine an acceptable low-cost, reliable method for bumping and assembling chips to flexible or rigid substrates using flip-chip assembly techniques. Alternative flip-chip bumping methods are compared to a traditional wafer solder bumping method. Flip-chip interconnection methods evaluated included high lead content solder, silver filled conductive adhesive, and gold stud bumps. Under bump metallurgies evaluated included bare aluminum, evaporated Cr/Cr–Cu/Cu, and electroless nickel plating.     

60 mm尺度CMOS图像传感器装片工艺技术研究

为了在使用过程中得到高质量的图像,对CMOS图像传感器芯片的贴装精度、芯片倾斜度及装片胶的稳定性要严格控制.对一款60 mm尺度CMOS图像传感器芯片封装结构进行优化研究,进一步优化装片材料和装片工艺参数,解决了芯片倾斜和翘曲问题.芯片翘曲度在10 μm以内,满足图像传感器对封装的技术要求以及可靠性要求.     

Recent advances in flip-chip underfill: materials, process, and reliability

In order to enhance the reliability of a flip-chip on organic board package, underfill is usually used to redistribute the thermomechanical stress created by the coefficient of thermal expansion (CTE) mismatch between the silicon chip and organic substrate. However, the conventional underfill relies on the capillary flow of the underfill resin and has many disadvantages. In order to overcome these disadvantages, many variations have been invented to improve the flip-chip underfill process. This paper reviews the recent advances in the material design, process development, and reliability issues of flip-chip underfill, especially in no-flow underfill, molded underfill, and wafer-level underfill. The relationship between the materials, process, and reliability in these packages is discussed.     

Estimation of warpage and thermal stress of IVHs in flip–chip ball grid arrays package by FEM

Flip–chip substrates have been developed to meet the recent technical trend. They have a small IVH (Inner Via Hole) diameter to improve electrical packaging performance. However, under thermal loading conditions, substrate warpage increases as substrate thickness decreases. Performance of FCBGA may be severely limited by substrate warpage. Furthermore, large thermal deformation induces cracks and delaminations in an IVH. It is important to understand substrate thermal deformation to improve FCBGA reliability.Thermal deformation of the FCBGA (Flip–Chip Ball Grid Array) with assembly conditions has been calculated globally by finite element analysis. And residual plastic strain of an IVH has been estimated microscopically to understand thermal stress of the IVH. Finite element method considering non-linear material model is verified with experiment on warpage to improve simulation accuracy. Also, the Taguchi method is applied to optimize FCBGA substrate design.Based on the computed results by the Taguchi method, we know core thickness in FCBGA substrate is the most determining factor for thermal deformation. The second most significant factor is the core material properties. Even though the plugging material in the IVH has little thermal deformation macroscopically with respect to the entire FCBGA substrate, the plugging material lowers the reliability of the IVH alone microscopically. In some cases depending on the plugging material, the IVH may develop some cracks.