阶跃恢复二极管倍频器的设计

阶跃恢复二极管常用于单阶高次的倍频器设计,我们将讨论如何利用阶跃恢复二极管的强非线性特征,设计一个微波倍频器。倍频器的设计要求是输入频率为100MHz,能够宽带输出1～3GHz的信号,同时能够输出2GHz的点频信号。首先将使用软件HSpice仿真和设计一个梳状发生器,然后使用软件ADS(Advanceddesignsystem)仿真和设计一个其带宽为100MHz,通带为1．95GHz～2．05GHz的带通滤波器。     

用阶跃恢复二极管设计16次倍频器

利用阶跃恢复二极管的非线性特性设计并制作了一个16次倍频器,采用100MHz温补晶振提供输入信号,输出频率1.6GHz,输出功率10dBm,频谱纯度良好,该倍频器已经成功应用于某测试系统中。     

S频段小型化低相噪倍频器设计

本文利用阶跃恢复二极管的非线性特性设计了一款S频段低相噪高阶倍频器.倍频器输入频率100MHz,输出频率2GHz,输出功率0~5dBm,输出信号杂散10GHz内优于-90dBc,残留相位噪声指标优于-130dBc/Hz@1kHz.创新性地集成FBAR带通滤波器,电路尺寸小于24mm×14mm×5mm.     

微波窄带高次倍频器

叙述了用于频率合成器的微波窄带高次倍频器.倍频器输出频率为一个点频,作为频率标准.作者研制出21次倍频器和19次倍频器,采用阶跃恢复二极管.本器件结构简单、紧凑,易加工,易调整.在-30～+50℃温度范围内稳定工作.在一定频率范围内输出中心频率可变.     

XC波段阶跃恢复二极管五次倍频器

介绍了阶跃恢复二极管五次倍频器，叙述了其工作原理，电路设计及实验结果。该倍频器结构简单，电路设计及实验结果。该倍频器结构简单，性能稳定可靠，适用频率范围较宽，调整方便，目前已成功地应用于８千兆彩色电视微波传输设备中。     

0.1～5GHz梳状谱发生器的设计与实现

梳状谱信号发生器在捷变频雷达、频标发生器等要求激励源同时输出数十个高纯频点中有着普遍的应用,同时在仪器设备中常常是扩展频带的关键器件。阶跃恢复二极管常用于梳状谱发生器及单阶高次的倍频器的设计。这里利用阶跃恢复二极管的强非线性特性,设计一个0.1到5GHz梳状谱发生器,输入信号为100MHz。首先通过理论计算和ADS辅助仿真获得初值,然后通过在真实系统上大量的实验获得最终结果。     

（英）基于肖特基平面二极管的150 GHz和180 GHz固定调节式倍频源

利用GaAs肖特基平面二极管,基于石英薄膜电路工艺,采用场和路相结合的综合分析方法,研制出了两个不同频率带宽的倍频器.在场软件中,二极管非线性结采用集总端口模拟,以提取二极管的嵌入阻抗,设计二倍频器的无源匹配电路,优化倍频的整体电路性能,提取相应的S参数文件,分析倍频器的效率.150 GHz二倍频器在149.2 GHz测得最高倍频效率7.5％,在147.4～152 GHz效率典型值为6.0％;180 GHz二倍频器在170 GHz测得最高倍频效率14.8％,在150 ～ 200 GHz效率典型值为8.0％.     

基于石英基片的二毫米频段三倍频器的研制

介绍了一个基于石英基片的二毫米频段三倍频器.采用反向并联变容二极管对结构实现倍频.建立了该二极管管对的等效电路模型并提取了模型参数.设计实现的倍频器输入为K型接头结构,输出为WR-8波导结构.获得的倍频器在输出频率为112.8～118.2 GHz范围内,输出功率大于0 dBm,最大输出功率超过2 dBm,最小倍频损耗为...     

多阳极220GHz倍频器单片设计

介绍了一款基于GaAs肖特基二极管单片工艺的220 GHz倍频器的设计过程以及测试结果。为提高输出功率,倍频器采用多阳极结构,8个二极管在波导呈镜像对称排列,形成平衡式倍频器结构。采用差异式结电容设计解决了多阳极结构端口散射参数不一致问题,提高了倍频器的转换效率和工作带宽。对设计的倍频器进行流片、装配和测试,测试结果显示：倍频器在204～234 GHz频率范围内,转化效率大于15%;226 GHz峰值频率下实现最大输出功率为90.5 mW,转换效率为22.6%。设计的220 GHz倍频器输出功率高,转化效率高,工作带宽大。     

基于ADS仿真的X波段二倍频器设计

利用GaAsFET的非线性特性设计了一个X波段二倍频器,输入频率为6.1～6.3 GHz,输出频率为12.2～12.6 GHz,带宽400 MHz。在理论计算的基础上,结合微波仿真软件ADS对输入匹配电路、输出匹配电路和平行耦合带通滤波器进行了优化设计,最后通过S参数及谐波平衡仿真得到倍频器的各项性能参数。仿真结果表明,该设计完全满足性能指标要求。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks