Rheology and physical properties of Bi0.5(Na0.82K0.18)0.5TiO3 piezoelectric thick films by aqueous gel-tape casting process

Piezoelectric Bi_0.5(Na_0.82K_0.18)_0.5TiO₃ thick films were prepared by aqueous gel-tape casting. Bi_0.5(Na_0.82K_0.18)_0.5TiO₃ nano-powder with perovskite structure prepared by sol–gel process was obtained. The average particle size was 200 nm. A stable Bi_0.5(Na_0.82K_0.18)_0.5TiO₃ suspension with 46 vol% solid loading and <1 Pa s viscosity was prepared when 0.8 wt% of ammonium polyacrylate was added with the pH value controlled in the range 7–9. The plasticizer glycerol had a positive effect on the fluidity of the suspensions. The tensile strength and strain to failure of the green tape were 0.42 MPa and 0.04 mm/mm when the addition of glycerol was 50 wt% of the premix solvent. The resulting about 100 μm thick films had relative permittivity of 910, dielectric loss of 4.9% at 10 kHz, remanent polarization of 24 μC/cm², coercive field of 56 kV/cm, and longitudinal effective piezoelectric coefficient d₃₃eff of 102 pC/N. The good performance illustrated that gel-tape casting was the effective way to prepare Bi_0.5(Na_0.82K_0.18)_0.5TiO₃ thick film.     

Piezoelectric properties and microstructures of ZnO-doped Bi0.5Na0.5TiO3 ceramics

This article studies the microstructure and piezoelectric properties of a ceramic lead-free NBT under different amount of ZnO doping. X-ray diffraction shows that Zn²⁺ diffuses into the lattice of (Bi_0.5Na_0.5)TiO₃ to form a solid solution with a pure perovskite structure. By modifying the zinc oxide content, the sintering behavior of (Bi_0.5Na_0.5)TiO₃ ceramics was significantly improved and the grain size was increased. The piezoelectric coefficient d₃₃ for the 1.0 wt.% ZnO-doped (Bi_0.5Na_0.5)TiO₃ ceramics sintered at 1050 °C was found to be 95 pC/N, and the electromechanical coupling factor k_p = 0.13. However, the piezoelectric coefficient d₃₃ for the 0.5 wt.% ZnO-doped (Bi_0.5Na_0.5)TiO₃ ceramics sintered at 1140 °C was found to be 110 pC/N, and the electromechanical coupling factor k_p = 0.17.     

Piezoelectric and dielectric properties of (Bi0.5Na0.5)0.94Ba0.06TiO3–Ba(Zr0.04Ti0.96)O3 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics of (1 − x)(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃–xBa(Zr_0.04Ti_0.96)O₃ (abbreviated as BNBT–BZT100x, wherein x from 0 to 10 mol%) were fabricated. We have studied effects of amount of BZT content on the electrical properties and microstructures. X-ray diffraction analysis indicates that a solid solution is formed when BZT diffuses into the BNBT lattice, and further the crystal structure of sintered hybrid changes from rhombohedral to tetragonal symmetry along with increasing BZT content. Piezoelectric property measurements reveal that the BNBT–BZT4 ceramics has the highest piezoelectric performance, for example, the piezoelectric constant d₃₃ reaches to 167 pC/N and planar electromechanical coupling factor k_p is up to 0.27. In addition, the effect of Bi₂O₃ on the electrical properties and microstructure of the BNBT–BZT4 ceramics have also been studied, and found that the doping of Bi enhances the piezoelectric properties of ceramics.     

Effect of Eu doping on structure and electrical properties of lead-free (Bi0.5Na0.5)0.94Ba0.06TiO3 ceramics

Eu-doped (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ (BNBT6-xEu, x=0.00–2.00 at%) lead-free piezoelectric ceramics have been synthesized by the solution combustion method. The effect of Eu doping concentration on the phase structure, microstructure and electrical properties of BNBT6 ceramics has been investigated. The XRD analysis confirms that the europium additive incorporates into the BNBT6 lattice and results in a phase transition from the coexistence of rhombohedral and tetragonal phases to a more symmetric pseudocubic phase. The SEM images indicate that the europium additive has little effect on the ceramic microstructure and the average grain size is about 2.0 μm. The electrical properties of BNBT6 ceramics can be improved by appropriate Eu doping. The 0.25 at% Eu doped BNBT6 ceramic presents excellent electrical properties: piezoelectric constant d₃₃=149 pC/N, remnant polarization P_r=40.27 μC/cm², coercive field E_c=2.95 kV/mm, dielectric constant ε_r=1658 and dissipation factor tan δ=0.0557 (10 kHz).     

Enhancement in dielectric and ferroelectric properties of lead free Bi0.5(Na0.5K0.5)0.5TiO3 ceramics by Sb-doping

Lead free piezoelectric Bi_0.5(Na_0.5K_0.5)_0.5TiO₃ (pure and 1 wt.%, 2 wt.%, 4 wt.% Sb-doped) ceramics were synthesized away from its MPB. The crystalline nature of the BNKT ceramic was studied by XRD and SEM. Depolarization temperature (T_d) and transition temperature (T_c) were observed through phase transitions in dielectric studies which were found to increase after Sb-doping, thus increasing its usable temperature range. In the study of relaxation behavior, the activation energy for relaxation was found to be 0.33, 0.43, 0.57 and 0.56 eV for pure and Sb-doped samples, respectively. All samples were found to exhibit normal Curie-Weiss law above their T_c. Doping of Sb was found to restrain the diffused character of the pure sample. In P-E loop, Sb-doping was found to increase the ferroelectric properties.Pure and Sb-doped BNKT ceramics exhibited high values of piezoelectric charge coefficient (d₃₃) as 115, 121, 129 and 100 pC/N, respectively.     

Structure and electrical properties of Nd2O3-doped 0.82Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3 ceramics

Nd₂O₃ doped 0.82Bi_0.5Na_0.5TiO₃–0.18Bi_0.5K_0.5TiO₃ (abbreviated to BNKT) binary lead-free piezoelectric ceramics were synthesized by the conventional mixed-oxide method. The results show that the BNKT ceramics with 0–0.15 wt.% Nd₂O₃ doping possesses a single perovskite phase with rhombohedral structure. The grain size of BNKT decreased with the addition of Nd₂O₃ dopant. The temperature dependence of the dielectric constant ?_r revealed that there were two-phase transitions from ferroelectric to anti-ferroelectric and anti-ferroelectric to paraelectric. A diffuse character was proved by linear fitting of the modified Curie–Weiss law. At room temperature, the specimens containing 0.0125 wt.% Nd₂O₃ with homogeneous microstructure presented excellent electrical properties: the piezoelectric constant d₃₃ = 134 pC/N, the electromechanical coupling factor K_p = 0.27, and the dielectric constant ?_r = 925 (1 kHz).     

Depolarization temperature and piezoelectric properties of (Bi1/2Na1/2)TiO3–(Bi1/2Li1/2)TiO3–(Bi1/2K1/2)TiO3 lead-free piezoelectric ceramics

The phase transition temperature and piezoelectric properties of x(Bi_1/2Na_1/2)TiO₃–y(Bi_1/2Li_1/2)TiO₃–z(Bi_1/2K_1/2)TiO₃ [x + y + z = 1] (abbreviated as BNLKT100y–100z) ceramics were investigated. BNLKT100y–100z ceramics were prepared by conventional ceramic fabrication. The depolarization temperature T_d was determined by the temperature dependence of the dielectric and piezoelectric properties. This study focuses on the effect of Li¹⁺ and K¹⁺ ions on T_d and the piezoelectric properties of BNT ceramics. BNLKT100y–100z (y = 0–0.08) has a morphotropic phase boundary (MPB) between rhombohedral and tetragonal phases at z = 0.18–0.20, and high piezoelectric properties were obtained at the MPB composition. The piezoelectric constant d₃₃ increased with increasing y; however, T_d decreased above y = 0.06. The d₃₃ and T_d values of BNLKT4-20 and BNLKT8-20 were 176 pC/N and 171 °C, and 190 pC/N and 115 °C, respectively.     

Effect of Nb-doping on dielectric, ferroelectric and conduction behaviour of lead free Bi0.5(Na0.5K0.5)0.5TiO3 ceramic

Bi_0.5(Na_0.5K_0.5)_0.5TiO₃ + y wt.% Nb (y = 0-1) piezoelectric ceramics were synthesized by solid state reaction. The effect of varying Nb concentration on various properties of BNKT ceramic has been investigated in detail. The effect of Nb-doping on dielectric and ferroelectric property has been presented. An increase in its depolarization temperature and Curie temperature with Nb concentration was observed. The electrical properties of pure and Nb-doped BNKT ceramic over a wide range of frequencies (20 Hz to 2 MHz) and temperature (30-430 °C) were studied using impedance spectroscopic technique.     

Fabrication and electrical properties of textured (Na,K)0.5Bi0.5TiO3 ceramics by reactive-templated grain growth

Textured (Na_0.85K_0.15)_0.5Bi_0.5TiO₃ (NKBT) ceramics with a relative density of >94% were fabricated by reactive-templated grain growth. Plated-like Bi₄Ti₃O₁₂ template particles synthesized by the NaCl–KCl molten salt process were aligned by tape casting in a mixture of original oxide powders. The effect of sintering temperature on the grain orientation and electrical properties of textured NKBT ceramics were investigated. The results show that the textured ceramics have a microstructure with plated-like grains aligning in the direction parallel to the casting plane. The degree of grain orientation increased at increasing sintering temperature. The textured ceramics show anisotropic electrical properties in the directions parallel and perpendicular to the casting plane. The dielectric constant parallel to {h 0 0} plane is three times higher than that of the perpendicular direction in textured NKBT ceramics. The optimized sintering temperature is 1150 °C where the maximum dielectric constant is 2041, the remnant polarization is 68.7 μC/cm², the electromechanical coupling factor (k₃₁) and the piezoelectric constant (d₃₃) amount to 0.31 and 134 pC/N, respectively.     

Effect of SrZrO3 on phase structure and electrical properties of 0.974(K0.5Na0.5)NbO3–0.026Bi0.5K0.5TiO3 lead-free ceramics

(0.974−x)(K_0.5Na_0.5)NbO₃–0.026Bi_0.5K_0.5TiO₃–xSrZrO₃ lead-free piezoelectric ceramics have been prepared by the conventional solid state sintering method. Systematic investigation on the microstructure, crystalline structures as well as electrical properties of the ceramics was carried out. With the addition of SrZrO₃, the rhombohedral–orthorhombic phase transition temperature of the ceramics increases. Both the rhombohedral–orthorhombic and orthorhombic–tetragonal phase transitions of the ceramics were modified to be around room temperature when x~0.05, and as a result remarkably strong piezoelectricity has been obtained in 0.924(K_0.5Na_0.5)NbO₃–0.026Bi_0.5K_0.5TiO₃–0.05SrZrO₃ ternary system, whose piezoelectric parameters were d₃₃=324 pC/N and k_p=41%.     

Effect of Bi2O3 additives on sintering and microwave dielectric behavior of La(Mg0.5Ti0.5)O3 ceramics

Bi₂O₃ was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics. The sintering temperature of La(Mg_0.5Ti_0.5)O₃ ceramics is generally high, about 1600 °C. However, the sintering temperature was significantly lowered about 275 °C from 1600 °C to 1325 °C by incorporating in 15 mol% Bi₂O₃ and revealed the optimum microwave dielectric properties of dielectric constant (?_r) value of 40.1, a quality factor (Q × f) value of 60,231 GHz, and the temperature coefficient (τ_f) value of 70.1 ppm/°C. During all addition ranges, the relative dielectric constants (?_r) were different and ranged from 32.0 to 41.9, the quality factors (Q × f) were distributed in the range of 928–60,231 GHz, and the temperature coefficient (τ_f) varies from 0.3 ppm/°C to 70.3 ppm/°C. Noticeably, a nearly zero τ_f can be found for doping 5 mol% Bi₂O₃ sintering at 1325 °C. It implies that nearly zero τ_f can be achieved by appropriately adjusting the amount of Bi₂O₃ additions and sintering temperature for La(Mg_0.5Ti_0.5)O₃ ceramics.     

Pyroelectric,ferroelectric, piezoelectric and dielectric properties of Na0.5Bi0.5TiO3 ceramic prepared by sol-gel method

Sodium bismuth titanate (BNT) nanopowder of molar composition 50/50 (Na_0.5Bi_0.5TiO₃) was prepared by a sol-gel processing method. The structure and microstructure of the precursor gel as well as the ferroelectric, pyroelectric, dielectric and piezoelectric properties of the BNT were studied. BNT crystallized in the rhombohedra perovskites structure Na_0.5Bi_0.5TiO₃ was obtained from the precursor gel by heating at 700 °C for 2 h in air. The BNT ceramic at 1100 °C sintering temperature present high crystallinity, good dielectric properties at 1 kHz (ε′=885, tan δ=0.03, T_c=370 °C), piezoelectric properties (k₃₃=0.39, c₃₃=105 GPa, e₃₃=12.6 C/m², d₃₃=120 pC/N), high remnant polarization (P_r=47 μC/cm²) and pyroelectric coefficient ($p$=707 μC/m² K) and low coercive field (E_c=55 kV/cm). Hence, the BNT prepared by sol-gel method could be used for silicon based memory device application where a low synthesis temperature is a key requirement.     

The effect of pre-milling/pre-synthesis process and excess Ba on the microstructure and dielectric/piezoelectric properties of nano-sized 0.94[(Bi0.5Na0.5)TiO3]–0.06[Ba(1+x)TiO3]

Lead-free piezoelectric ceramic specimens of 0.94[(Bi_0.5Na_0.5)TiO₃]–0.06[Ba_(1+x)TiO₃] (where 0 ≤ x ≤ 0.03) (abbreviated as nano-sized BNBT6(x)) compositions containing excess Ba were synthesized by a modified mixed oxide method. In this modified process (Bi_0.5Na_0.5)TiO₃ and Ba_(1+x)TiO₃ were separately prepared by pre-milling the starting powders in high energy mill (HEM) in order to obtain nano-particle size. BNBT6(x) specimens were also prepared by the conventional process to be compared with the former one. The pre-milling of the raw materials lowered the calcination temperatures of (Bi_0.5Na_0.5)TiO₃ and Ba_(1+x)TiO₃ by 110 and 200 °C, respectively, as compared with the conventional process. High energy milling improved the reaction activity and homogeneity of the materials used throughout the process, enhanced the sintering density and grain uniformity, and decreased the grain size. The effects of excess Ba on the characteristic of nano-sized BNBT6(x) specimens were systematically investigated. The piezoelectric and dielectric properties of BNBT6(x) specimens containing various amounts of excess Ba show maximum values of the planar electromechanical coupling factor (k_p) of 38% and the piezoelectric constant (d₃₃) of 198 pC/N with Ba excess amount of 0.02 mol [BNBT6(0.02)]. The d₃₃ then decreases with increasing excess Ba content to 0.03 mol, whereas the relative dielectric permittivity (K^T₃₃) steadily increases with increasing excess Ba and reaches the maximum value of 785 for this composition. Besides, the depolarization temperature (T_d) slightly decreased within the range of x = 0–0.01 mol and then tends to rapidly decrease with the excess Ba of 0.02 mol. In addition to this, the T_d remains unchanged with the higher excess Ba of 0.03 mol. The modified mixing and milling method were considered to be a new and promising process for lead-free piezoelectric ceramics owing to their excellent piezoelectric/dielectric properties.     

Effect of Bi2O3 and B2O3 additives on the sintering temperature, microstructure, and microwave dielectric properties for Sm(Mg0.5Ti0.5)O3 ceramics

The microwave dielectric properties of Sm(Mg_0.5Ti_0.5)O₃ incorporated with various amount of Bi₂O₃ and B₂O₃ additives have been investigated systematically. In this study, both Bi₂O₃ and B₂O₃ additives acting as a sintering aid can effectively lower the sintering temperature from 1550 °C to 1300 °C. The ionic radius of Bi³⁺ for a coordination number of 6 is 0.103 nm, whereas the ionic radius of B³⁺ is 0.027 nm. Clearly, the ionic radius of Bi³⁺ is greatly larger than one of B³⁺, which resulted in the specimens incorporated with Bi₂O₃ having larger lattice parameters and cell volume than those incorporated with B₂O₃. The experimental results show that no second phase was observed throughout the entire experiments. Depending on the interfacial tension, the liquid phase may penetrate the grain boundaries completely, in which case the grains will be separated from one another by a thin layer as shown in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with Bi₂O₃. Whereas, in Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with B₂O₃, the volume fraction of liquid is high, the grains may dissolve into the liquid phase, and rapidly rearrange, in which case contact points between agglomerates will be dissolved due to their higher solubility in the liquid, leading plate-like shape microstructure.A dielectric constant (?_r) of 29.3, a high Q × f value of 26,335 GHz (at 8.84 GHz), and a τ_f of −32.5 ppm/°C can be obtained for Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 10 mol% Bi₂O₃ sintered at 1300 °C. While Sm(Mg_0.5Ti_0.5)O₃ ceramics incorporated with 5 mol% B₂O₃ can effectively lower temperature coefficient of resonant frequency, which value is −21.6 ppm/°C. The Sm(Mg_0.5Ti_0.5)O₃ ceramic incorporated with heavily Bi₂O₃ and B₂O₃ additives exhibits a substantial reduction in temperature (∼250 °C) and compatible dielectric properties in comparison with that of an un-doped one. This implied that this ceramic is suitable for miniaturization in the application of dielectric resonators and filters by being appropriately incorporated with a sintering aid.     

Temperature dependence of piezoelectric properties on Nd and V co-substituted Bi4Ti3O12 ceramics for ceramic resonator applications

The temperature dependences of the piezoelectric properties of (Bi_4−yNd_y)_1−(x/12)(Ti_3−xV_x)O₁₂ [BNTV-x, y (x = 0.01, y = 0.00–1.00)] were investigated for environmentally friendly lead-free piezoelectric ceramic resonators with low-temperature coefficients of resonance frequency, TC-f. The |TC-f| in the (33) mode improved with increasing concentration of modified Nd ions, y, and exhibited the smallest |TC-f| value of 77.4 ppm/°C at y = 0.75 (BNTV-0.75). The |TC-f| in the other vibration mode (t), was also investigated for the BNTV-0.75 ceramic, and a smaller value of 42 ppm/°C was obtained. The (t) mode of the BNTV-0.75 ceramic showed excellent piezoelectric properties: Q_m = 4200, Q_e max = 31 and TC-f = −49.8 ppm/°C. These properties are very similar to those of commercialized hard PZT ceramics for resonator applications. The BNTV-0.75 ceramic seems to be a superior candidate material for lead-free piezoelectric applications of ceramic resonators.     

Phase development and dielectric responses in PMN–BNT ceramics

(1 − x)Pb(Mg_1/3Nb_2/3)O₃–x(Bi_0.5Na_0.5)TiO₃ ceramics were prepared by the conventional mixed-oxide method. All compositions show complete perovskite solid solutions and the structure to change from cubic to rhombohedral at x = 0.5. The dielectric constant and dielectric loss tangent were measured as a function of both temperature and frequency. The results indicated a relaxor ferroelectric behavior for all ceramics. The temperature at maximum of the dielectric constant of PMN–BNT ceramics were seen to increase with increasing BNT content. Moreover, the broadest dielectric peak occurs at x = 0.9, which leads to a morphotropic phase boundary in this system.     

Phase structure,ferroelectric properties,and electric field-induced large strain in lead-free 0.99[(1−x)(Bi0.5Na0.5)TiO3-x(Bi0.5K0.5)TiO3]–0.01Ta piezoelectric ceramics

Lead-free 0.99[(1−x)(Bi_0.5Na_0.5)TiO₃-x(Bi_0.5K_0.5)TiO₃]–0.01Ta piezoelectric ceramics were prepared by a conventional solid-state reaction process. The ferroelectric properties, and strain behaviors were characterized. Increase of the (Bi_0.5K_0.5)TiO₃ content induces a phase transition from coexistence of ferroelectric tetragonal and rhombohedral to a relaxor pseudocubic phase. Accordingly, the ferroelectric order is disrupted significantly with the increase of (Bi_0.5K_0.5)TiO₃ content and the destabilization of the ferroelectric order is accompanied by an enhancement of the unipolar strain, which peaks at a value of 0.35% (corresponding to a large signal d₃₃ of 438 pm/V) in samples with 20 mol% (Bi_0.5K_0.5)TiO₃ content. Temperature dependent measurements of both polarization and strain from room temperature to 120 °C suggested that the origin of the large strain is due to a reversible field-induced nonpolar pseudocubic-to-polar ferroelectric phase transformation.     

Dielectric properties of Bi-doped Ba0.8Sr0.2TiO3 ceramic solid solutions

Bismuth-doped barium–strontium–titanate ceramics of the formula (Ba_0.8Sr_0.2)_(1−1.5y)Bi_yTiO₃ were prepared using a conventional solid-state reaction method. The structure, dielectric properties, and ferroelectric relaxor behaviour of all compositions were thoroughly investigated. The findings revealed a broad dielectric anomaly and a shift in dielectric maxima towards higher temperatures with increasing frequency. The diffuseness degree indicator γ was about 1.68, and dielectric relaxation was noted to follow the Vogel–Fulcher relationship, with T_f=185 K, f₀=1.18×10¹⁰ Hz, and Ea=0.35 eV, which further supported the spin-glass-like properties of BBSTs. The latter were also noted to display significant ferroelectric relaxor behaviour that could be attributed to the presence of Bi³⁺ doping ions. The degree of relaxation behaviour was noted to increase with the increase in bismuth concentration. Raman spectra were investigated as a function of temperature, and the findings confirmed the results from X-ray and dielectric measurements. Among the compositions assayed in this solid solution, 10% Bi-doped Ba_0.8Sr_0.2TiO₃ yielded promising relaxor properties that make it a strong candidate for future industrial application in the production of efficient and eco-friendly relaxor ferroelectric materials.