Tunnel diode integrated rectangular patch antenna for millimetre range

Theoretical investigations conducted for the Ge tunnel diode integrated rectangular patch antenna reveals that such an antenna exhibits frequency tunability with bias voltage. The Ge tunnel diode loaded patch can be operated in the millimetre range (53.517–56.4615GHz). The range of frequency obtainable for operation is 2944.5MHz. The radiation pattern shows variation with the bias voltage, and radiated power beamwidth and directivity vary inversely with bias voltage. Thus, the Ge tunnel diode loaded patch can be used to achieve electronic tuning (BW = 5.355%) with the bias voltage.     

Noise considerations for a tunnel diode integrated rectangular patch antenna

The tunnel diode integrated rectangular patch antenna is investigated, with emphasis mainly on noise considerations. Noise power is calculated and is found to increase very slightly with frequency for both GaAs and Ge tunnel diode loaded patches. Noise figure and noise temperature also increase with frequency for GaAs and Ge tunnel diode loaded patches. Loading the patch with the tunnel diode increases the effective noise figure and effective noise temperature of the patch, degrading the performance of the communication system significantly.     

Frequency Tunable Microstrip Patch Antenna Using RF MEMS Technology

A novel reconfigurable microstrip patch antenna is presented that is monolithically integrated with RF microelectromechanical systems (MEMS) capacitors for tuning the resonant frequency. Reconfigurability of the operating frequency of the microstrip patch antenna is achieved by loading it with a coplanar waveguide (CPW) stub on which variable MEMS capacitors are placed periodically. MEMS capacitors are implemented with surface micromachining technology, where a 1-mum thick aluminum structural layer is placed on a glass substrate with a capacitive gap of 1.5 mum. MEMS capacitors are electrostatically actuated with a low tuning voltage in the range of 0-11.9 V. The antenna resonant frequency can continuously be shifted from 16.05 GHz down to 15.75 GHz as the actuation voltage is increased from 0 to 11.9 V. These measurement results are in good agreement with the simulation results obtained with Ansoft HFSS. The radiation pattern is not affected from the bias voltage. This is the first monolithic frequency tunable microstrip patch antenna where a CPW stub loaded with MEMS capacitors is used as a variable load operating at low dc voltages     

MOS capacitor loaded frequency agile microstrip antenna

A new MOS capacitor loaded frequency agile microstrip patch antenna is proposed in which the operating frequency of the rectangular microstrip antenna is electronically controlled by the bias voltage of the MOS capacitor. Theoretical investigations, based on a modal expansion cavity model as well as an improved theory of Richards et al. (1981, IEEE Transactions on Antennas and Propagation, 29, 38-41), are carried out for five different oxide (Si₃N₄) thicknesses from 100 Å to 500 Å for the (Au-Si₃N₄-Si) MOS structure. The maximum obtainable frequency tuning range (76.08%) is achieved for the lowest value of oxide thickness (100 Å); this is almost 1.5 times the value reported for the varactor loaded patch antenna. The larger frequency variation is achieved with lower variation in the bias voltage as compared with the varactor.     

Integrated push-pull oscillating antenna

A new integrated self-oscillating patch antenna is presented. Two bipolar transistors, operating in push-pull mode, are embedded in a rectangular opening inside a rectangular patch in order to increase the power radiated by the antenna. Measurements show a high radiated power and linear frequency change with bias voltage. The radiation patterns of the patch are not affected by the introduced modifications     

Electrically tunable rectangular microstrip antenna

The tunable microstrip patch antenna using electrostatic force is presented. The antenna was patterned on the top side of a (poly-ethylene terephthalte) film. When a DC bias voltage is applied between the flexible patch and the fixed ground plane, the flexible patch bends downwards towards the fixed ground plane owing to the electrostatic force of attraction. The bending of the flexible patch decreases the air-gap, and consequently the effective permittivity of the antenna is increased. By increasing effective permittivity, the resonant frequency is shifted downwards. For the tunable microstrip patch antennas of 6, 8 and 10 GHz at DC bias 150 V, the measured tuning ranges were 217.04, 242.58 and 365.63 MHz, respectively.     

A quad-polarization and frequency reconfigurable square ring slot loaded microstrip patch antenna for WLAN applications

In this paper, a novel polarization and frequency reconfigurable microstrip patch antenna which can switch between vertical and horizontal linear polarizations, left hand and right hand circular polarizations at two WLAN frequencies is presented. The orthogonal linear polarizations are achieved by a square microstrip patch antenna fed by two ports on adjacent sides. By introducing corner truncated perturbation on opposite corners of right diagonal of a square patch, orthogonal circular polarizations are achieved. By controlling the bias voltage of two PIN diodes loaded at perturbed corners, a single structure can achieve quad polarization states. Furthermore, by superimposing a square ring slot into the corner truncated square patch and incorporating four PIN diodes into the square ring slot, quad polarization are achieved at dual frequencies. Simulated and measured results indicate that the antenna can achieve quad polarization at two WLAN bands (5.15–5.35 GHz) and (5.75–5.85 GHz). The proposed antenna is simple, has low profile and can be scaled easily for other frequencies.     

Double MOS Loaded Circular Microstrip Antenna with Airgap for Mobile Communication

A novel model of a wide frequency range double MOS loaded circular microstrip patch antenna with airgap between ground plane and substrate is proposed. In this structure two metal oxide semiconductor (MOS) devices are loaded on the patch to enhance the operating frequency range of antenna. To investigate the antenna, different parameters such as resonance frequency, input impedance, frequency agility, VSWR, radiation pattern etc. are calculated and simulated. The resonant frequency of proposed 10 mm radius patch is upward shifted from 5.2 to 6.8 GHz using 1 mm airgap and by loading MOS, antenna can be tuned down to 1.27 GHz operating frequency, which leads to compactness and tunability of antenna. Proposed antenna can be tuned between 1.27 and 6.8 GHz frequency of operation which makes the antenna highly suitable for wide frequency range of mobile communication. The proposed double MOS loaded antenna possessed 82.94 % frequency agility. The antenna is worth for GPS, WLAN, UMTS, and WiMAX operations.     

基于BST可变电容的电调微带天线研究

采用BaxSr1–xTiO3(BST)可变电容作为调谐元件研制了一种工作频率可调的电调谐微带天线。该天线通过利用单片机控制电源单元输出不同的偏置电压来改变BST可变电容的电容大小,进而实现工作频点的调整。结果表明,当电源输出偏压在0-52 V变化时,该微带天线的工作频点可在1.47-1.61 GHz调节,回波损耗低于–15 dB。     

Modified rectangular patches for self-oscillating active-antennaapplications

Two modifications to a rectangular-patch antenna, suitable for the integration of active devices, are presented. In the first modification, the impedance inverter was placed in the rectangular opening formed by removing the central part of the patch. This modification allows optimal matching of the active device by changing the position, width, and length of the impedance-line transformer. An oscillating antenna, using this modified patch and a Gunn diode, showed a high EIRP, higher spectral purity, and substantially lower cross-polarization levels, in comparison with the reference active antenna with an unmodified patch. Because of the higher overall Q, this modification is recommended for active-antenna applications with active devices that have a narrower negative-resistance bandwidth. In the second modification, an active device (Gunn diode) was integrated directly into a rectangular opening inside the patch, without the use of a line transformer. This reduced the overall Q of the antenna, thus allowing wide-band frequency tuning by changing the bias voltage. A clear spectrum, with no spurious components of the free-running oscillating antenna, was observed. Radiation patterns in the E and H planes were measured. Low levels of cross-polarization, as for the first modification, were obtained. Injection-locking properties were investigated throughout the tuning range. A relatively wide locking range, with a good locking gain, was achieved. Such a miniaturized wide-band VCO antenna is applicable for integration in injection-locked active arrays, and spatial power combiners     

Design and Simulation of a Novel Micromachined Frequency Reconfigurable Microstrip Patch Antenna

In this paper, a novel model of a frequency reconfigurable microstrip patch antenna based on MEMS (microelectromechanical system) technology is introduced. Fabrication process of the proposed antenna is comprised of bulk and surface micromachining. Patch of the antenna is deposited over a silicon platform. The platform is created by structuring the silicon membrane which is formed through bulk micromachining of a silicon chip. The patch and the platform beneath it are discretized to facilitate their vertical displacement over underside air gap. Thermal actuation is used as driving mechanism. Operational mechanism of the antenna is such that by downward relocation of the patch, its resonant frequency shifts downward. Thermal actuators are connected to the platform and applying voltage to them cause downward shift in resonant frequency of the antenna. FEM (finite element method) simulations confirm mechanical and microwave performances of the antenna which are investigated by theoretical analyses. From mechanical point of view, antenna has tolerable mechanical stability and microwave point of view indicates that return losses are good (below $-$ 10 dB) and radiation patterns are very close to each other with reasonable gains. Moreover VSWR is less than 2 throughout the frequency tuning range. In the proposed antenna by applying a CMOS compatible voltage in the range of 0–4.5 V to each thermal actuator, the resonant frequency of the antenna shifts from 17.37 GHz in up-sate position to 15.07 GHz in down-state position. As a result of this frequency shift, a frequency tuning range of 2.3 GHz with bandwidths of 3.9 % in up-state and 1.4 % in down-state positions is achieved.     

An RFID Tag Using a Planar Inverted‐F Antenna Capable of Being Stuck to Metallic Objects

This letter presents the design for a low‐profile planar inverted‐F antenna (PIFA) that can be stuck to metallic objects to create a passive radio frequency identification (RFID) tag in the UHF band. The designed PIFA, which uses a dielectric substrate for the antenna, consists of a U‐slot patch for size reduction, several shorting pins, and a coplanar waveguide feeding structure to easily integrate with an RFID chip. The impedance bandwidth and maximum gain of the tag antenna are about 0.3% at 914 MHz for a voltage standing wave ratio (VSWR) of less than 2 and 3.6 dBi, respectively. The maximum read range is about 4.5 m as long as the tag antenna is on a metallic object.     

Active inverted stripline circular patch antennas for spatial powercombining

An active antenna configuration is proposed for spatial-power-combining applications. The active patch antenna uses an inverted stripline topology to take advantage of several features. These features include avoiding drilling through the circuit substrate to insert the diode and the use of air within the resonant cavity to reduce loss. The inverted substrate serves as a radome for hermetic sealing. The active antenna and housing can be fabricated in modular form for reduced cost and easy replaceability of devices. The active inverted stripline patch antenna exhibits a much cleaner spectrum and greater stability than previously reported active antennas. The fixture serves as a ground plane, heat sink, and support in an active planar array or as a mirror in a quasi-optical power-combining resonator. A single active antenna operating at 9.23 GHz exhibited a 16-MHz locking bandwidth at 30-dB locking gain. Power-combining efficiencies of over 89% have been demonstrated for a four-element square array that maintained injection-locking and power-combining over a 60-MHz bias tuned bandwidth. Similarly, a four-element diamond array showed over 86% combining efficiency and 50-MHz bias tuned bandwidth. Beam steering was demonstrated by varying bias voltage to the individual antenna elements of the square array     

Wide-Range Varactor-Tuned Terahertz Oscillator Using Resonant Tunneling Diode

We propose a wide-range varactor-tuned terahertz oscillator using a resonant tunneling diode (RTD) and estimate the tuning range. In a slot antenna, a varactor diode is placed in parallel with an RTD and can be operated with different bias voltages. Frequency tuning is possible by changing the varactor-diode capacitance with the bias voltage. A wide frequency tuning range >200 GHz (500 to 740 GHz) is obtained with an oscillator with a 20-μm-long antenna, 1.3-μm² RTD mesa, and 16-μm² varactor-diode mesa by electromagnetic-field analysis including a varactor-diode model.     

左/右旋圆极化可重构微带天线

设计了一种左/右旋圆极化可重构的微带天线。在矩形微带贴片的两条边上增加枝节,贴片与枝节通过PIN 二极管开关连接,通过控制PIN 二极管的通断来改变正交模式的相位差,使天线在同一个馈电点上可实现左旋圆极化（LHCP）和右旋圆极化（RHCP）的重构。该天线在（2800±10）MHz 的频率范围内驻波比小于2,轴比小于3dB。仿真结果与测试结果均验证了该方案的可行性。     

Phase modulated active antenna

The authors demonstrate that an active microstrip antenna consisting of a rectangular patch radiator peripherally loaded with a GaAs MESFET can be operated simultaneously as a signal source and as a phase modulator. The experimental and simulated results presented illustrate the degree to which phase modulation can be obtained by applying variable DC bias to the active antenna in the presence of a fundamental frequency injection locking signal.<>     

Transient analysis of a space-borne microstrip patch antennailluminated by an electromagnetic pulse

The transient response of a microstrip patch antenna excited by a plane wave is studied using a finite difference algorithm applied to a total field version of Maxwell's curl equations in the time domain. A wide bandwidth study shows different behavior in the antenna, depending on the frequency and angle of incidence of the wave. At low frequencies, the voltage in a 50 Ω load is proportional to the derivative of the incident Eⁱ field. With increasing frequency, parasitic oscillations appear to be due to the short-circuited patch. In addition, at high frequencies, antenna sizes and wavelength are of the same order. The voltage contains oscillations at the frequency of the TM mode of the antenna. Two patterns of coupling appear: (1) capacitive coupling, where the current on the patch rises at the wire-metallic plane junction and spreads on the patch and on the finite ground plane; and (2) coupling due to the scattering, where the current rises at the edges of the patch and on the finite ground plane     

Polarisation-agile active patch antenna

A polarisation-agile active antenna has been constructed and tested. The radiation can be selected to be circularly polarised in either sense, or linearly polarised in the vertical, horizontal or either diagonal plane. The antenna consists of two varactor diode loaded active patches using npn bipolar transistors in the common base configuration as sources, and with the patch axes at right angles to each other. The two oscillators are locked to an external source, and the phase from each patch element is controlled by varying the diode bias voltage. By appropriate combination of the phase relationships, the various polarisations are produced.<>     

Analysis of Gunn integrated annular ring microstrip antenna

The analysis conducted on Gunn integrated annular ring microstrip antenna and evaluation of various parameters such as input impedance, voltage standing-wave radio voltage standing wave ratio (VSWR), return loss, bandwidth, radiation pattern, beamwidth, etc., as a function of bias voltage and threshold voltage reveals that the Gunn loaded patch offers wider tunability, better matching, enhanced radiated power as compared to the patch alone. Bandwidth of the Gunn loaded patch improves to 11.07% over the 7.9% bandwidth of the patch whereas the radiated power is enhanced by 3.7 dB as compared to the patch.     

A Gunn-Diode Active Leaky-Wave Frequency Scanning Antenna

A frequency tunable active leaky-wave scanning antenna using Gunn-diode voltage control oscillator (VCO) as source is developed. The frequency tuning controlled by changing either the varactor diode dc bias or the Gunn diode dc bias is demonstrated. The measured scanning angle of active antenna is close to 15 degree as the Gunn VCO frequency tuned from 12.58GHz to 12.98GHz. To excite the first higher order mode of the microstrip leaky-wave antenna is fed asymmetrically. The dominant mode excitation has been successfully suppressed by adding a sequence of covered wire in the middle line of the microstrip leaky wave antenna. This is a prototype of frequency scanning antenna using two terminal device, which can be easily scaled up to millimeter wave frequency region.