基片表面朝向对ZnO纳米线生长机理的影响

采用热蒸发ZnO粉末法,以金膜为催化剂,在两片表面分别朝上和朝下的Si(100)基片上生长ZnO纳米线(样品分别标为1#和2#)。X射线衍射(XRD)图谱上只存在ZnO的(002)衍射峰,说明ZnO纳米线沿(001)择优取向。通过扫描电子显微镜(SEM)表征发现,ZnO纳米线整齐排列在Si基片上,直径在100nm左右,平均长度为4mm。通过分析得出,两种基片上生长的ZnO纳米线的生长机理是不相同的:1#样品,在基片表面上先生长ZnO薄膜,再在薄膜上生长ZnO纳米线;2#样品,ZnO纳米线直接外延生长在基片表面。结果显示基片表面的朝向影响ZnO纳米线的生长机理。     

氨气退火对ZnO纳米线阵列光致发光性质的影响

采用水热方法在Si（100）衬底上制备ZnO纳米线．利用提拉法在Si衬底上首先制备ZnO晶种层,然后利用水热法在晶种层上生长ZnO纳米线．在不同温度下的NH。气氛中,对zn0纳米线进行退火处理．系统地研究了NHs退火对ZnO纳米线光学性质的影响,在低温光致发光光谱中观察到了-9氮受主相关的光发射,并通过自由电子一受主辐射复合光发射确定受主离化能为129meV．实验结果还表明,随着退火温度的升高,施主一受主对辐射复合发光呈现了微弱红移现象．在700℃退火的条件下制备的ZnO纳米线的低温PL谱中,观察到较为明显的自由激子光发射,并采用理论拟合进行证明．     

Structure and internal stress of Au films deposited on Si02/Si(100) and mica by dc sputtering

Au films with a thickness of about 300 nm were deposited on SiO2/Si(100) and mica substrates by dc sputtering. X-ray diffraction spectroscopy and field emission scanning electron microscopy were used to analyze the structure and internal stress of the Au films. The films grown on SiO2/Si(100) show a preferential orientation of [111] in the growth direction. However the films grown on mica have mixture crystalline orientations of [111], [200], [220] and [311] in the growth direction and the orientations of [200]and [311] are slightly more than those of [111] and [2201. An intemal stress in the films grown on SiO2/Si(100) is tensile. For Au films grown on mica the internal stresses in the [111]- and [311]-orientation grains are compressive while those in the [200]- and [220]-orientation grains are tensile. Au films grown SiO2/Si(100) have some very large grains with a size of about 400 nm and have a wider grain size distribution compared with those grown on mica.     

Structure and internal stress of Au films deposited on SiO2／Si（100） andmica by dc sputtering

Au films with a thickness of about 300 nm were deposited on SiO2/Si(100) and mica substrates by dc sputtering. X-ray diffraction spectroscopy and field emission scanning electron microscopy were used to analyze the structure and internal stress of the Au films. The films grown on SiO2/Si(100) show a preferential orientation of [111] in the growth direction. However the films grown on mica have mixture crystalline orientations of [111], [200], [220] and [311] in the growth direction and the orientations of [200] and [311] are slightly more than those of [111] and [220]. An internal stress in the films grown on SiO2/Si(100) is tensile. For Au films grown on mica the internal stresses in the [111]-and [311]-orientation grains are compressive while those in the [200]- and [220]-orientation grains are tensile. Au films grown SiOJSi(100) have some very large grains with a size of about 400 nm and have a wider grain size distribution compared with those grown on mica.     

P-doped germanium nanowires with Fano-broadening in Raman spectrum

The optimized growth conditions for high density germanium(Ge) nanowires and P-doped Ge nanowires on Si(111) substrate were investigated,the phosphorus(P)-doping in Ge nanowires was also characterized.Vapor liquid solid-low pressure chemical vapor deposition(VLS-LPCVD) of Ge nanowires was conducted with different thicknesses of Au film as catalyst,different flow rates of GeH_4 as precursor and PH_3/Ar as co-flow.The morphologies of the Ge nanowires were characterized by scanning electron microscopy(SEM),the P-doping was verified by micro Raman spectroscopy via measuring the P local vibrational peak(342-345 cm~(-1)) and asymmetric broadening of Ge-Ge vibrational peak(about 300 cm~(-1),respectively.The characterization results show that 1 run thickness of Au catalyst is the most suitable condition among thicknesses of 0.1,1,5,and 10 nm for the growth of high density Ge nanowires at 300 and 350℃,and 0.5 sccm is the best flow rate of PH_3/Ar to grow high density and large scale P-doped Ge nanowires among flow rates of 0.5,1 and 2sccm.The P impurity can be doped into Ge nanowires effectively during LPCVD process at 350 ℃.     

金属硅化物熔体中不同形貌SiC晶体的生长

以过渡族金属硅化物为溶剂，采用自发熔渗法和溶液法来研究不同形貌SiC晶体在金属硅化物熔体中的生长情况.利用光学显微镜（OM）、扫描电镜（SEM）、体视显微镜等对熔渗试样和采用溶液法生长的单晶和晶须的形貌结构进行了观察和表征，利用X射线衍射仪（XRD）对采用溶液法生长的晶体和晶须进行了相组成和晶型的表征，并讨论了SiC晶须和SiC单晶的生长机理.结果表明，Fe5Si3、CoSi、Co4.5CrSi4.5、Ti2.3Si7.7等熔体适合生长SiC单晶，FeSi、FeSi2等熔体适合生长SiC晶须，而当Fe3Si熔体渗入SiC预制件后，仅有石墨相析出.     

Synthesis of vertically aligned carbon nanotube arrays on silicon substrates

In 1991, Ijima first observed carbon nanotubes (CNTs) using a high-resolution transmission electron microscope[1]. CNTs represent a new material with unique struc-tural, electrical, mechanical, physical and chemical properties, and have received much attention from researchers worldwide. A significant amount of work has been done in the past decade to reveal the properties and synthesis of CNTs and great progress has been made. The focus of researches has transferred recently to the large-…     

Effect of annealing on composition, structure and electrical properties of Au layers grown on different thickness Cr layers

110 nm-thick Au layers were sputter-deposited on unheated glasses coated about a 10 nm-thick and a 50 nm-thick Cr layer respectively. The Au/Cr bilayer films were annealed in a vacuum of 1 mPa at 300~C for 2, 5 and 30 min, respectively. Auger electron spectroscopy, X-ray diffraction and Field emission scanning electron microscopy were used to analyze the composition and structure of the Au layers. The resistivity of the bilayer films was measured by using four-point probe technique. The adhesion of the bilayer films to the substrate was tested using tape tests. The amount of Cr atoms diffusing into the Au layer increases with increasing the annealing time, resulting in a decrease in lattice constant and an increase in resistivity of the Au layer. The content of Cr inside the Au layer grown on the thinner Cr layer is less than that grown on the thicker Cr layer. For the Au/Cr bilayer films, the lower resistivity and the good adhesion to the glass substrate can be obtained at a shorter annealing time for a thinner Cr layer.     

Metallurgical microstructure control in metal-silicon reactions

A comprehensive review on interfacial reactions to form silicides between metal and Si nanowire or wafer is given.Formation of silicide contacts on Si wafers or Si nanowires is a building block needed in making current-based Si devices.Thus,the microstructure control of silicide formation on the basis of kinetics of nucleation and growth has relevant applications in microelectronic technology.Repeating events of homogeneous nucleation of epitaxial silicides of Ni and Co on Si in atomic layer reaction is presented.The chemical effort on intrinsic diffusivities in diffusion-controlled layer-typed intermetallic compound growth of Ni2Si is analyzed.     

Preparation and Characterization of Amorphous Silicon Oxide Nanowires

Large-scale amorphous silicon nanowires （SiNWs） with a diameter about 100 nm and a length of dozens of micrometers on silicon wafers were synthesized by thermal evaporation of silicon monoxide （SiO）. Scanning electron microscope （SEM） and transmission electron microscope （TEM） observations show that the silicon nanowires are smooth. Selected area electron diffraction （SAED） shows that the silicon nanowires are amorphous and en-ergy-dispersive X-ray spectroscopy （EDS） indicates that the nanowires have the composition of Si and O elements in an atomic ratio of 1：2,their composition approximates that of SiO2. SiO is considered to be used as a Si sources to produce SiNWs. We conclude that the growth mechanism is closely related to the defect structure and silicon monoxide followed by growth through an oxide-assisted vapor-solid reaction.     

磁性Fe⁃Au复合材料的制备及SERS性能

表面增强拉曼散射光谱(SERS)是一种广泛应用于低浓度分子物种识别并且能够提供结构信息的技术。SERS检测中基底纳米材料的颗粒大小、形状和空间分布对检测结果有着重要影响。探索制备新型纳米结构可以为SERS研究和应用提供新的活性基底和理论基础。由于具有良好的传质和吸附性能,多孔材料广泛应用于构筑SERS活性基底纳米复合物。以多孔磁性纳米材料作固相载体,通过水热合成多孔纳米α⁃Fe2O3,再将其还原成Fe,使Fe的表面也有孔道存在。在Fe表面自组装Au纳米材料构筑SERS基底,以对巯基苯胺（PATP）和三聚氰胺水溶液作为目标分子,对其SERS性能进行测试。调控Au纳米粒子尺寸大小,考察其对SERS性能影响,得到50 nm Au具有最优性能。利用扫描电子显微镜（SEM）、X 射线衍射(XRD)和N2吸附等表征手段,对纳米复合物结构及组成进行分析表征。结果表明,得到了一种同时具有吸附和检测效果的纳米复合物SERS基底。     

Effect of interface layers on electron field emission properties of amorphous diamond films

Hydrogen-free high sp~3 content amorphous diamond (AD) films are deposited on three different substrates——Au-coated Si (Au/Si), Ti-coated Si (Ti/Si) and Si wafers. Electron field emission properties and fluorescent displays of the above AD films are studied by using a sample diode structure. The compositional profile of the interfaces of AD/Ti/Si and AD/Si is examined by using secondary ions mass spectroscopy (SIMS). Because of the reaction and interdiffusion between Ti and C, the formation of a thin TiC intermediate layer is possible between AD film and Ti/Si substrate. The field emission properties of AD/Ti/Si are sufficiently improved, especially its uniformity. A field emission density of 0.352 mA/cm~2 is obtained under an electric field of 19.7 V/μm. The value is much more than that of AD/Au/Si and AD/Si under the same electric field.     

Fabrication of metal suspending nanostructures by nanoimprint lithography (NIL) and isotropic reactive ion etching (RIE)

We report herein a rational approach for fabricating metal suspending nanostructures by nanoimprint lithography (NIL) and isotropic reactive ion etching (RIE). The approach comprises three principal steps: (1) mold fabrication, (2) structure replication by NIL, and (3) suspending nanostructures creation by isotropic RIE. Using this approach, suspending nanostructures with Au, Au/Ti or Ti/Au bilayers, and Au/Ti/Au sandwiched structures are demonstrated. For Au nanostructures, straight suspending nanostructures can be obtained when the thickness of Au film is up to 50 nm for nano-bridge and 90 nm for nano-finger patterns. When the thickness of Au is below 50 nm for nano-bridge and 90 nm for nano-finger, the Au suspending nanostructures bend upward as a result of the mismatch of thermal expansion between the thin Au films and Si substrate. This leads to residual stresses in the thin Au films. For Au/Ti or Ti/Au bilayers nanostructures, the cantilevers bend toward Au film, since Au has a larger thermal expansion coefficient than that of Ti. While in the case of sandwich structures, straight suspending nanostructures are obtained, this may be due to the balance of residual stress between the thin films. Supported by the National Natural Science Foundation of China (Grant No. 20573002) and the Major State Basic Research Development Program of China (973Pprogram) (Grant No. 2001CB6105)     

ZnO一维纳米结构在金属基底上的原位生长和表征

以Cu—Zn合金片为基底并提供Zn源,在含氧气氛中通过调控反应温度和氧偏压,采用热氧化法直接在Cu-Zn合金片上大面积可控地合成了多种形貌的ZnO一雏纳米材料薄膜（包括纳米带、纳米片、纳米梳和纳米线等）,采用多种分析方法对产物的形貌、结构进行了详细的表征,并对其相应的生长模型进行了讨论。结果表明,反应温度和氧偏压对ZnO纳米结构的生长至关重要,随着反应温度升高或氧含量的减少,气相Zn／O物种的偏压比增加,ZnO纳米结构尺寸变小。     

Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiNx mask layer by MOCVD

In this paper, 1 μm n-GaN was grown by using varied and fixed ammonia flow (NH₃) on SiN _x mask layer on Si(111) substrate using metal organic chemical vapor deposition (MOCVD). In-situ optical reflectivity traces of GaN growth show that the three- to two-dimensional process has been prolonged by using varied ammonia flow on SiN _x mask layer method compared with that grown by fixing ammonia flow. Structural and optical properties were characterized by high-resolution X-ray diffraction and photoluminescence, and compared with the sample grown by fixing ammonia flow, GaN grown using the varied ammonia flow on SiNx mask layer showed better structure and optical quality. It was assumed that the low NH₃ flow in the initial growth stage considerably increased the GaN island density on the nano-porous SiN _x layer by enhancing vertical growth. Lateral growth was significantly favored by high NH₃ flow in the subsequent step. As a result, the improved crystal and optical quality was achieved utilizing NH₃ flow modulation for GaN buffer growth on Si(111) substrate.     

Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN x mask layer by MOCVD

In this paper, 1 μm n-GaN was grown by using varied and fixed ammonia flow (NH₃) on SiN _x mask layer on Si(111) substrate using metal organic chemical vapor deposition (MOCVD). In-situ optical reflectivity traces of GaN growth show that the three- to two-dimensional process has been prolonged by using varied ammonia flow on SiN _x mask layer method compared with that grown by fixing ammonia flow. Structural and optical properties were characterized by high-resolution X-ray diffraction and photoluminescence, and compared with the sample grown by fixing ammonia flow, GaN grown using the varied ammonia flow on SiNx mask layer showed better structure and optical quality. It was assumed that the low NH₃ flow in the initial growth stage considerably increased the GaN island density on the nano-porous SiN _x layer by enhancing vertical growth. Lateral growth was significantly favored by high NH₃ flow in the subsequent step. As a result, the improved crystal and optical quality was achieved utilizing NH₃ flow modulation for GaN buffer growth on Si(111) substrate.

     

Fabrication and green emission of ZnO nanowire arrays

Well-aligned single-crystalline wurzite zinc oxide (ZnO) nanowire arrays were successfully fabricated on a Si substrate by a simple physical vapor-deposition (PVD) method at a relatively low temperature of about 500℃. The as-fabricated nanowires were preferentially arranged along the [001] direction of ZnO. The photoluminescence spectrum of ZnO nanowire arrays showed two emission bands: a strong green emission at around 500 nm and a weak ultraviolet emission at 380 nm. The strong green light emission was re...     

双AlN插入层法在Si图形衬底上进行AlGaN/GaN HEMT的MOCVD生长

双AlN插入层方法被用来在Si（111）图形衬底上进行AlGaN/GaN高迁移率晶体管（HEMT）的金属有机物化学气相沉积（MOCVD）外延生长。Si图形衬底采用SiO2掩膜和湿法腐蚀（无掩膜）两种方法进行制备。高温生长双AlN插入层用来释放GaN外延层和Si衬底之间由于晶格失配和热失配而产生的张应力。AlGaN/GaN HEMT的生长特性被讨论和分析。在使用优化的双AlN插入层之前,可以在图形[1-100]方向观察到比[11-20]方向更多的由于应力而引起的裂纹。这是由于GaN在（1-100）面比（11-20）更稳定。建议在图形设计中,长边应沿着[11-20]方向进行制备。拉曼测试显示在图形凹角处比凸角处有更大的拉曼频移,证明在图形凹角处有更大的张应力。     

A high-fe aluminum matrix welding filler metal for hardfacing aluminum-silicon alloys

A high-Fe containing aluminum matrix filler metal for hardfacing aluminum-silicon alloys has been dmeloped by using iron, nickel, and silicon as the major strengthening elements, and by measwing mechanical properties, room temperature and high temperature wear tests, and microstructural analysis. The filler metal,which contains 3.0% - 5.0% Fe and 11.0% - 13.0% Si, exhibits an excellent weldability. The as-cast and as-welded microstructures for the filler metal are of uniformly distribution and its dispersed network of hard phase is enriched with Al-Si-Fe-Ni. The filler metal shows high mechanical properties and wear resistance at both room temperature and high temperatures. The deposited metal has a better resistance to impact wear at 220℃ than that of substrate Al-Si-Mg-Cu piston alloy; at room temperature, the deposited metal has an equivalent resistance to slide wear with lubrication as that of a hyper-eutectic aluminmn-silicon allot with 27% Si and 1% Ni.     

Investigation on laser cladding of MoSi2 powder on steel

The feasibility of the fabrication of coatings for elevated-temperature structural applications by laser cladding MoSi2 pow- der on steel was investigated. A dense and crack-free fine coating, well-bonded with the substrate has been obtained by this technique This coating consists of FeMoSi, Fe2Si and a small amount of MosSi3 due to dilution of the substrate in the coating. The microstructure of the coating is characterized of typical fine dendrites, The dendrites are composed of FeMoSi primary phase, and the interdendritic areas are two eutectic phases of FeMoSi and Fe2Si. The hardness of the coating reaches 845 Hv0.5, 3.7 times larger than that of the steel substrate （180 Hv05）.