Al0.3Ga0.7N MSM紫外探测器研究

用MOCVD生长的未掺杂的疗n-Al0．3Ga0．7N制备了MSM结构紫外探测器。器件在5.3V偏压时暗电流为1nA,在315nm波长处有陡峭的截止边,在1V偏压下305nm峰值波长处探测器的电流响应率为0．023A／W,要进一步提高器件的响应率,方法之一是优化器件的结构参数,尽量减小叉指电极的宽度。为了检验Au／n-Al0．3Ga0．7N肖特基接触特性,电击穿MSM右边结,由正向I-V特性曲线计算出理想因子n～1．05,零偏势垒高度ФB0～1．16eV,表明形成的Au／n-Al0．3Ga0．7N肖特基结较为理想。     

CdS肖特基紫外探测器的研制

基于微电子平面工艺,采用电子束蒸发Pt方法,制备了基于CdS材料的肖特基紫外探测器。对该器件的I-V特性、光谱响应率、量子效率等参数进行了测试,结果表明器件具有良好的整流特性,室温零偏压下光谱响应范围250~500 nm,在500 nm波长处达到最大光谱响应率0.285 A/W,量子效率为75.3%。并根据热电子发射理论对测试结果进行了计算得到理想因子为1.024,肖特基势垒高度为0.859 eV。     

GaN基肖特基结构紫外探测器

在蓝宝石(0001)衬底上采用低压金属有机物化学气相沉积(MOCVD)方法生长GaN外延层结构,以此为材料制作了GaN基肖特基结构紫外探测器.测量了该紫外探测器的暗电流曲线、C-V特性曲线、光响应曲线和响应时间曲线.该紫外探测器在5V偏压时暗电流为0.42nA,在10V偏压时暗电流为38.5nA.在零偏压下,该紫外探测器在250nm～365nm的波长范围内有较高的响应度,峰值响应度在363nm波长处达到0.12A/W,在365nm波长左右有陡峭的截止边;当波长超过紫外探测器的截止波长(365nm左右),探测器的响应度减小了三个数量级以上.该紫外探测器的响应时间小于2μs.     

高响应度GaN肖特基势垒紫外探测器的性能与分析

制作了反向饱和电流为5.5×10-14 A/cm2,势垒高度为1.18eV的GaN肖特基势垒紫外探测器.测量了探测器分别在零偏压及反向偏压下的光谱响应度,响应度随反向偏压无显著变化,零偏压下峰值响应度在波长358.2nm处达到了0.214A/W.利用波长359nm光束横向扫描探测器的光敏面,测量了探测器在不同偏压下的空间响应均匀性,相应偏压下的光响应在光敏面中央范围内响应幅值变化不超过0.6%.光子能量在禁带边沿附近的光束照射下,GaN肖特基势垒紫外探测器存在势垒高度显著降低现象,这种现象在肖特基透明电极边沿及其压焊电极附近表现得更为突出.探测器在368和810nm波长光一起照射时的开路电压比只有368nm光照射时的开路电压大,而零偏压下两者的光电流近似相等.利用这种开路电压变化效应估算了探测器在368nm光照射下,表面被俘获空穴的面密度变化量约为8.4×1010 cm-2.     

Au/4H-SiC肖特基UV光电二极管的温度特性

采用微电子平面工艺,高真空电子束蒸发金属Au做肖特基接触,多层金属Ni、Ti、Ag合金在背底上做欧姆接触,制作出Au/n-4H-SiC肖特基势垒紫外光电二极管(UV-SBD).测试并分析了在不同温度下该器件的I-V特性及光谱响应特性.实验表明:器件高温下有较低的反向漏电流,正向开启电压下降速度为-1.2 mV/℃;波长响应范围为200～400 nm,在23℃和260℃时,光谱响应峰值分别出现在320 nm和330 nm,每100℃波长红移约4 nm;响应灵敏度随温度升高而降低,平均每100℃降低2倍.     

GaN基肖特基结构紫外探测器

在蓝宝石 (0 0 0 1)衬底上采用低压金属有机物化学气相沉积 (MOCVD)方法生长GaN外延层结构 ,以此为材料制作了GaN基肖特基结构紫外探测器 .测量了该紫外探测器的暗电流曲线、C V特性曲线、光响应曲线和响应时间曲线 .该紫外探测器在 5V偏压时暗电流为 0 4 2nA ,在 10V偏压时暗电流为 38 5nA .在零偏压下 ,该紫外探测器在2 5 0nm～ 36 5nm的波长范围内有较高的响应度 ,峰值响应度在 36 3nm波长处达到 0 12A/W ,在 36 5nm波长左右有陡峭的截止边 ;当波长超过紫外探测器的截止波长 (36 5nm左右 ) ,探测器的响应度减小了三个数量级以上 .该紫外探测器的响     

AlGaN MSM紫外探测器

用通过MOCVD生长的未掺杂的n-Al0．3Ga0．7N制备了金属-半导体-金属 (MSM)结构紫外探测器。器件在2．5V偏压时的暗电流为1pA,在6．5V偏压时的暗电流为1nA．在1V偏压下和298nm波长处,探测器的电流响应率为0.038A／W,在300nm 波长处有陡峭的截止边,这与文献中介绍的AlxGa1-xN探测器在x=0．3时截止波长为 300nm相一致。     

紫外成像用高响应ZnS肖特基光电二极管阵列

基于分子束外延(MBE)生长技术,制备出了新颖的8×8 ZnS肖特基光电二极管阵列,研究了制备该器件的标准光刻,金属沉积,湿化学腐蚀,SiO2绝缘层沉积等一系列微电子处理工艺.该肖特基光电二极管阵列的光谱响应截止边为340nm.在400～250nm的可见光盲区域,光电响应测试显示该器件在截止边波长处具有0.15A/W的高响应度,相对应的量子效率为55%.成像测试显示该器件具有良好的紫外成像特性.     

紫外成像用高响应ZnS肖特基光电二极管阵列

基于分子束外延(MBE)生长技术,制备出了新颖的8×8 ZnS肖特基光电二极管阵列,研究了制备该器件的标准光刻,金属沉积,湿化学腐蚀,SiO2绝缘层沉积等一系列微电子处理工艺.该肖特基光电二极管阵列的光谱响应截止边为340nm.在400～250nm的可见光盲区域,光电响应测试显示该器件在截止边波长处具有0.15A/W的高响应度,相对应的量子效率为55%.成像测试显示该器件具有良好的紫外成像特性.     

AlGaN MSM结构日盲型紫外探测器

采用低压-金属有机化学气相沉积(MOCVD)法在(0001)方向的AlN/蓝宝石模板上生长得到Al组分为40%的AlGaN材料,设计并制作了MSM型AlGaN日盲紫外探测器。通过HRXRD,SEM,AFM对AlGaN材料进行了表征,结果表明:该材料为六方相结构,且应变程度很小,粗糙度(RMS)为1.32 nm。通过测试器件在230³20 nm之间、在不同偏压下的光谱响应曲线,发现器件的截止波长在285 nm附近,截止边很陡峭;器件的峰值响应波长为275 nm;在7 V偏压下,器件峰值响应度达到最大2.8 mA/W;零偏压下,器件的暗电流1×10-13A,器件的暗电流很小。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first