Fe-doped InP semi-insulating buried heterostructure for high speed and high power operations in directly modulated semiconductor laser

A buried heterostructure based on Fe-doped InP semi-insulating layers is optimised for both high output power and large modulation bandwidth operations up to 70/spl deg/C in a 10 Gbit/s directly modulated 1.3 /spl mu/m InGaAsP/InP distributed feedback laser. The slope efficiency of 0.19 W/A and -3 dB bandwidth of 10 GHz at 1.5 times threshold current is demonstrated experimentally.     

InP/InGaAsP p-type substrate and mass transported doubly buried heterostructure laser

A novel InP/InGaAsP buried heterostructure laser diode on p-type InP substrate has been developed. The laser has achieved a threshold current as low as 20 mA DC with high power output of 50 mW under CW operation in the fundamental transverse mode.     

A vertical monolithic combination of an InGaAsP/InP laser and a heterojunction bipolar transistor

A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together with an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.     

The growth of high quality InP/InGaAs/InGaAsP interfaces by CBE for SCH multi-quantum well lasers

Bulk InGaAsP and heterointerfaces of InP/InGaAs and InGaAsP/InGaAs have been grown by chemical beam epitaxy for use in multi-quantum well separate confinement heterostructure lasers. InGaAsP has been successfully grown for λ=1.1, 1.2 and 1.4 μm. The TMI and TEG incorporation coefficients have strong dependencies on substrate temperature and also charge as the InGaAsP composition tends towards InP. InP/InGaAs and InGaAsP/InGaAs quantum wells have been grown to determine the optimum gas switching sequence to minimize the measured photoluminescence FWHM. InGaAs quantum wells as narrow as 0.6 nm have been grown with 7K FWHM of 12.3 meV. Lattice matched MQW-SCH lasers were grown using different interface switching sequences with the best laser having a threshold current density of 792A/cm² for an 800 × 90 μm broad area device.     

InAs/InP量子点激光器制备工艺研究

报道了通过化学湿刻蚀制备窄脊条InAs/InP量子点激光器的方法。激光器脊条主要是由半导体材料InGaAs和InP构成,通过选择合适配比的H2SO4∶H2O2∶H2O和H3PO4∶HCl腐蚀溶液和InP的腐蚀方向,在室温下选择性地腐蚀了InGaAs和InP,获得了窄脊条宽为6μm的量子点激光器。此激光器能够在室温连续波模式下工作,激射波长在光纤通信重要窗口1.55μm,单面最大输出功率超过12mW。     

Monolithically integrated laser/rear-facet monitor arrays withV-groove for passive optical fiber alignment

An InGaAsP/InP laser monolithically integrated with a rear facet monitor and a fiber V-groove has been demonstrated for the first time. The integrated device incorporates an etched-facet laser fabricated using an in situ, multistep, reactive ion etch process. The integrated V-groove, which is etched directly into the InP substrate, is designed to enable passive alignment of an optical fiber to the active region of the laser. Passive coupling efficiencies of 18% and 8% have been obtained using cleaved multimode and single mode fibers, respectively. Responsivities of the rear facet monitor were as high as 0.49 A/W     

InGaAs／InP分别限制量子阱激光器的阱数优化设计和实验制备

根据对ＩｎＧａＡｓＰ－ＩｎＰ分别限制量子阱激光器结构的注入效率的分析和利用Ｘ射线衍射结ＩｎＧａＡｓＰ－ＩｎＰ２０个周期的多量子阱结构异质界面的研究，设计，制备了４个阱的ＩｎＧａＡｓＰ－ＩｎＰ分别限制量子阱激光器结构，利用质子轰击制得条形激光器，阈值电流为１００ｍＡ，直流室温连续工作，单面输出外微分子效率为３６％。     

Heat transfer and residual stress modeling of a diamond film heat sink for high power laser diodes

A three-dimensional finite element model of heat transfer and residual stress within high power laser diodes and their heat sinks is developed. These components are typically used in telecommunication applications. The model addresses both p-side down and p-side up laser diodes mounted on a variety of commercially available gold plated diamond heat sinks. In addition, the model is optimized with respect to the dimensions of the diamond film, and the laser diode cavity lengths. Finally, the design and performance of diamond film heat sinks for high performance GaAs and InP laser diodes are discussed. The results demonstrate the superior performance achieved through thermal engineering of the dominant thermal transport path from the laser diode heat source through diamond films to the heat sink.     

High-current InGaAsP-InP phototransistors and some monolithic optical devices

High-gain InGaAsP/InP heterojunction phototransistors (HPT's) have been fabricated by a liquid-phase epitaxial (LPE) technique. A collector current as high as 170 mA has been achieved at a 2-V bias and a 155-µW incident-light power. The optical gain is 1180. A monolithic optical device has been constructed in a InGaAsP/InP system which includes the HPT and a double heterojunction (DH) light-emitting diode (LED). The monolithic optical device is designable as an optical switching and an optical bistable or a light amplification device by controlling positive feedback between the HPT and the LED. A light amplification system comprised of a discrete InGaAsP/InP laser diode and a high-current HPT, has exhibited incoherent-coherent conversion with a positive amplification.     

Novel hemispherical vertical cavity 1.3 mu m surface-emitting laser on semi-insulating substrate

A vertical cavity GaInAsP/InP surface-emitting laser at 1.3 mu m wavelength is demonstrated with a hemispherical cavity structure. The laser consists of a circular mesa buried (passivated) in polyimide and is made on a semi-insulating InP substrate. CW operation was obtained at 77 K with a threshold current density of 90 kA/cm/sup 2/.<>     

InP/InGaAsP条形半导体激光器中的瞬态温度特性理论计算

本文首次通过建立二维热传导模型,给出了条形InP/InGaAsP四元系半导体激光器中的瞬态热特性的理论计算结果,它包括了在几种条件下,激光器管芯内温度的空间分布随阶跃电注入的时间变化关系.计算结果表明四元系条形激光器体内温度升高比三元系GaAs/GaAlAs激光器的温升低,有关原因在文中给予讨论.     

Low-threshold (3.2 mA per element) 1.3 μm InGaAsP MQW laserarray on a p-type substrate

A low-threshold 1.3-μm InGaAsP MQW laser array was fabricated on a p-type InP substrate taking compatibility with n/p/n-type laser-driver circuits into account. The laser has a p/n-type current-blocking structure and is made entirely by metal-organic chemical vapor deposition (MOCVD). A 10-channel laser array with a threshold current as low as 3.2±0.2 mA (per element) and a slope efficiency of 0.27±0.01 W/A is obtained     

1．55μm InGaAsP／InPDH激光器中的0．95μm发光带与Auger复合

报道了在１．５５μｍＩｎＧａＡｓＰ／ＩｎＰ激光器中发现的０．９５μｍ波长高能发光峰的一系列实验结果，并通过分析肯定了ＩｎＧａＡｓＰ有源区的Ａｕｓｅｒ复合是造成载流子向两侧ＩｎＰ限制层漏泄的主要原因，也是影响１．５５μｍＩｎＧａＡｓＰ／ＩｎＰＤＨ激光器Ｔ０值的主要因素。     

Current-injection efficiency in semiconductor lasers with a waveguide based on quantum wells

A dynamic distributed diffusion-drift model of laser heterostructures, which takes into account carrier capture by quantum wells, is developed. The leakage currents in the lasing mode are calculated for different laser structures without wide-gap emitters: InGaAs/GaAs (lasing wavelength λ = 0.98 μm), InGaAsP/InP (λ = 1.3 μm), and InGaAs/InP (λ = 1.55 μm). It is shown that consideration of the finite carrier-capture time is of major importance for calculating structures with deep quantum wells. The ratio of the leakage currents to the total current in the structures with deep quantum wells (InGaAsP/InP and InGaAs/InP) increases with an increase in the injection current and may reach a few percent when the lasing threshold is multiply exceeded.     

Low threshold InGaAsP/InP buried crescent laser with double current confinement structure

An InGaAsP/InP laser diode emitting at 1.3 μm with a crescent shaped active region is described. The active region is completely embedded in InP by a two-step LPE technique, and a double current confinement scheme is incorporated with two reverse biased p-n junctions at both sides of the active layer. A threshold current as low as 20 mA has been achieved in CW operation at room temperature. Fundamental transverse mode operation with linear light output-current characteristics and single longitudinal mode oscillation have been obtained.     

A high-speed InGaAsP/InP DFB laser with an air-bridge contactconfiguration

High-speed modulation with flat frequency response has been realized in an InGaAsP/InP DFB laser at 1.3-μ wavelength. The laser design uses an isolated narrow mesa and a novel air-bridge contact configuration. A direction current modulation bandwidth in excess of 17 GHz was measured     

GaInAsP/InP semiconductor vertical GRIN-lens for semiconductoroptical devices

A GaInAsP/InP vertical GRIN-lens (VGL), which is suitable for monolithic integration with semiconductor laser diodes (LDs) or semiconductor laser amplifiers (SLAs), was fabricated for the first time. A narrow FWHM of vertical far-field pattern of 6 degree was experimentally obtained with 8 layers of GRIN core region (8 μm thick) and InP cladding layers. An integration of this VGL with a taper waveguide SLA with the output width of 10 μm was also demonstrated     

InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxy

InGaAs/InGaAlAs/InAlAs/InP separate-confinement hetero-structure-multiquantum-well (SCH-MQW) laser diodes have been fabricated by molecular-beam epitaxy (MBE), and room-temperature pulsed operation at 1.57 ?m has been achieved. This SCH-MQW laser is composed of InGaAs well layers, InGaAlAs quaternary barrier layers, and InAlAs and InP cladding layers.     

Precise Grating Profile Evaluation for DFB Lasers Using an Optical Metrology

A precise grating profile evaluation method for distributed-feedback (DFB) laser diodes was achieved using a simple optical metrology. Spectroscopic scatterometry, an optical-wavelength light-diffraction technique, is emerging as a fast, accurate, and nondestructive means of monitoring profiles. A photoresist grating pattern on an InP substrate and an etched InP grating with periods of 0.2 and 0.24 mum were successfully evaluated by using unpolarized simple optical metrology. A precise grating profile evaluation technique with an accuracy of nanometers enabled us to obtain an accurate coupling coefficient (kappaL) for DFB laser diodes. DFB laser diodes with well-controlled kappaL are very promising for practical use in cost-effective optical networks.     

Tunable InGaAsP Lasers for Spectral Measurements of High Bandwidth Fibers

An ultrashort-cavity thin-film laser of InGaAsP, pumped with a mode-locked and Q-switched Nd: YAG laser, has been used as the source and an InGaAs/InP p-i-n photodiode as the detector to demonstrate a system capable of measuring bandwidths of 8.5 GHz in single-mode optical fibers. The film laser emits pulses shorter than 10 ps and is tunable over 1700 A near the chromatic dispersion minimum in fibers.