基于ARM和Linux的嵌入式视频监控系统研究

随着嵌入式技术和网络技术的不断发展,在视频监控中使用嵌入式系统已经成为可能,而这要建立在以ARM处理器为基础的Linux操作系统之上。对此,本文以基于ARM和Linux的嵌入式视频监控系统为研究对象,在对嵌入式系统及Linux操作系统分别介绍的基础上,对嵌入式视频监控系统的现状进行了分析,希望本文能够为相关部门提供参考。     

3G无线视频监控系统的设计与实现

随着3G技术的日益成熟和嵌入式技术的飞速发展,数字化视频监控系统将逐步替代传统的模拟视频监控系统,同时随着人们生活质量的提高和活动范围的不断扩大对无线视频监控系统的需求越来越迫切,所以利用3G网络进行实时视频传输必将成为一种趋势。该系统在Linux操作系统下,搭建了一个基于ARM9的视频图像采集环境,并通过CDMA2000网络完成了视频图像的传输接收,实现了远程视频监控的功能。     

基于Linux的无线视频监控系统的研究

随着嵌入式技术、图像压缩技术以及无线传输技术的发展,基于嵌入式系统的无线视频监控系统已成为视频监控领域的发展趋势。文章将嵌入式系统的特点与无线传输技术相结合,研究和开发出一种基于Linux的无线视频监控系统。本嵌入式视频监控系统采用C/S架构,服务器基于ARM11处理器,搭载嵌入式Linux系统,主要实现图像的采集、压缩、预览和传输;PC机作为客户端主要实现视频图像的解压、显示以及参数设置等功能。     

基于ARM嵌入式的视频监控系统的设计

提出一种基于ARM嵌入式开发平台视频监控的实现方案。通过V4L2在Linux下构建视频图像采集和显示,然后使用servfox和spcaview构建视频服务器,系统可在Linux和Windows操作系统下通过窗口或者网页进行视频监控和图像抓拍。测试表明系统的监控图像清晰,并具有体积小、成本低、可靠性强等优点。     

基于嵌入式ARM下的视频监控系统的实现

介绍了一种应用于智能家居视频监控系统的实现方案。通过对嵌入式技术的分析和理解,将无线局域网的特点和优势与嵌入式系统相结合,提出并实现了一种无线视频监控的解决方案。该系统以ARMS3C2440为硬件平台,利用Video4Linux2获得USB摄像头采集到的视频图像数据,将其通过UDP协议进行网络传输,最终在PC端的一个基于SDL库设计的程序上进行实时接收并显示。     

基于H．264的嵌入式网络监控系统

嵌入式网络视频监控系统是一种以嵌入式技术、视频压缩编码技术和网络传输控制技术为核心的新型视频监控系统,它在稳定性、实时性、处理速度、功能、价格、扩展性等方面与传统的视频监控系统相比有着突出的优势。本文设计了一种以S3C2410微处理器和嵌入式Linux操作系统为核心的先进视频监控系统设备。     

基于ARM的视频监控系统的研究及应用

文中提出了一种基于ARM9处理器和嵌入式Linux的远程视频监控系统。该系统采用USB接口的摄像头获取原始视频图像数据,经过JPEG压缩编码处理,然后通过UDP协议完成网络传输,最后构建嵌入式Boa服务器,客户端通过Java Applet与Boa服务器交互,完成了视频图像的远程控制。该系统具有开发成本低、安全性高、稳定性强及分布式远程监控的优点。     

嵌入式网络视频监控系统的设计与实现

本文介绍了基于嵌入式Linux和ARM9$3C2410平台的网络视频监控系统的设计与实现。该系统使用USB摄像头获取实时视频，采用H．264标准对原始视频进行压缩编码，通过JRTPLIB实时流媒体编程技术实现视频数据的网络传输．用户在客户端使用浏览器即可查看远程视频图像。     

嵌入式Linux的图像采集与显示

随着网络技术的发展,利用嵌入式系统实现远程视频监控、可视电话和视频会议等应用已成为可能。为了实现这些应用,如何获得图像数据和显示图像是一个重要环节。针对这一点,介绍了基于S3C2410平台与嵌入式Linux进行图像采集与显示的通用方法,并简单说明了软件的开发流程。     

OMAP3530在网络视频服务器设计中的应用

为了解决网络视频通信中对视频图像清晰度要求高以及减少视频过多占用网络资源的问题,构建高效、实时、可靠的数字视频监控系统,设计了一种基于OMAP3530双核视频处理芯片、H.264编码技术、嵌入式Linux操作系统、RTP/UDP网络传输协议的数字视频服务器,详细介绍了视频服务器的硬件结构、软件设计以及视频数据网络传输与处理等主要技术。实验结果表明,该服务器的关键技术指标满足应用要求,能够满足监控系统视频图像的实时性要求。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.