基于DDS驱动PLL结构的宽带频率合成器设计

结合数字式频率合成器(DDS)和集成锁相环(PLL)各自的优点,研制并设计了以DDS芯片AD9954和集成锁相芯片ADF4113构成的高分辨率、低杂散、宽频段频率合成器,并对该频率合成器进行了分析和仿真,从仿真和测试结果看,该频率合成器达到了设计目标.该频率合成器的输出频率范围为594～999 MHz,频率步进为5 Hz,相位噪声为-91 dBc/Hz@10 kHz,杂散优于-73 dBc,频率转换速度为520 μs.     

高频谱纯度小步进频率合成器的设计与实现

讨论了一种杂散抑制高,频率步进小及相位噪声低的频率合成器的设计方法。设计采用混合式频率合成技术,研制实现了S波段频率合成器,实验结果表明,该频率合成器输出信号频率步进100 Hz,相位噪声优于-115dBc/Hz@10kHz,杂散抑制大于80dBc,跳频时间140μs。     

基于雷达信号模拟器的Ku波段宽带跳变源的设计

文章采用DDS驱动PLL的方式,实现了一种能完全覆盖Ku波段的宽带小步进低相位噪声低杂散频率合成器的设计,同时对DDS PLL频率合成器的输出特性进行了理论分析,并通过实验进行了验证.最终我们研制出了输出频率为12-18GHz的频综系统,步进为1MHz,相位噪声优于-90 dBc/Hz@10kHz,杂散优于-50dBc.     

基于DDS激励PLL方式的Ku波段频率源

采用Ku波段压控整荡器(VCO)HMC632,结合直接数字式频率合成器(DDS)AD9850、鉴相器ADF4107和运算放大器AD820设计了一款基于DDS激励PLL方式的Ku波段频率源。测试结果表明,该频率源在输出频率范围为15~15.5GHz,跳频时间间隔为20μs时的锁定时间为2μs,杂散小于-60dBc,相位噪声小于-70dBc/Hz@10kHz,输出功率大于7dBm。设计思路简洁,电路结构简单。     

基于DDS的锁相频率合成器设计

提出一种基于直接频率合成技术(DDS)的锁相环(PLL)频率合成器,该合成器利用DDS输出与PLL反馈回路中的压控振荡器(VCO)输出混频,替代多环锁相频率合成器中的低频率子环,使合成器输出频率在89.6~110.4 MHz之间分辨率达1 Hz,并保持DDS相噪、杂散水平不变。结合DDS的快速频率切换和PLL环路跟踪能力,实现信号的快速跳频。本文给出了技术方案,讨论部分电路设计,并对主要技术指标进行理论分析,最后给出了实验结果。     

一种L频段快速跳频频率合成器的设计和实现

结合数字式频率合成器(DDS)和集成锁相环(PLL)各自的优点,研制并设计了以DDS芯片AD9851和集成锁相芯片ADF4112、4106构建的高分辨率、低杂散、宽频段频率合成器,并对该频率合成器进行了分析、仿真和试验,从仿真和实际测试结果看,该频率合成器达到了设计目标。该频率合成器能在L波段上实现每赫兹频率步进,相位噪声能满足-73dBc/Hz@1kHz、-83dBc/Hz@10kHz、93dBc/Hz@10kHz,杂散优于-60dBc,频率转换速度优于为50μs。     

X波段低相噪细步进频率合成器的研制

采用多种频率合成技术,包括DDS技术、PLL技术等,设计了一种带宽200 MHz、全频带相位噪声小于-115dBc/Hz@5kHz、步进频率小于0.1Hz的X波段频率合成器。混频锁相模块中的偏移频率跟随输出频率跳变,从而实现全频带内相位噪声指标基本一致。设计了动态防失锁电路,以解决偏移频率跳变引起的失锁和错误锁定问题。研制结果验证了方案设计和电路设计的可实现性。此频率合成器特点是在X波段兼顾细步进、低相位噪声和高杂散抑制等各项指标。     

高纯度捷变频频率源研制

介绍了一种新颖的L波段低相噪、捷变频频率合成器.该方案所设计的频率合成器是一种可预置频率的合成器.在方案中,运用2个锁相环, 选择其中一个作为工作环,另外一个作为预置环（即：一个环工作,同时另一环预置下一工作频点, 锁相环锁定时间不影响跳频时间,可以减小环路带宽来提高纯度,得到高纯度频点）.这种乒乓工作原理实现了高纯度、捷变频的跳频源.其输出频率为960～1 160 MHz,步进10 MHz,相位噪声、跳频时间和杂散抑制.文中给出了详细的设计过程、样品研制及测试结果.     

C波段宽带高速跳频频率源的设计与实现

针对高速跳频通信系统的需求,设计并实现了一款工作在C波段、带宽为1 GHz、步进为3 MHz的宽带频率源。该频率源采用DDS激励PLL方案,用FPGA控制DDS实现低频段的小步进跳频,再用乒乓式锁相环进行倍频得到最终输出。采用2路DDS基准时钟来保证杂散指标,并对跳频时间和相位噪声等指标进行简单预算,得到整个系统最大跳频时间小于1μs,相位噪声优于-106 d Bc/Hz/10 k Hz,杂散优于-60 d Bc。     

超低相位噪声快速宽带频率合成器的研究

本文介绍了一种快速、高分辨力、低相、低杂散的频率合成器方案,该方案采用DDS＋PLL合成方法，通过大幅度降低环路内的分频比来改善相位噪声指标，同时采用加动态预制电压的方法来提高环路转换时间。实践证明该方案是成功的，达到的主要技术指标为：相位噪声≤-112dBc/Hz @ 10kHz,杂散≤-70dBc，步进间隔10Hz，转换速度＜100μs。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks