一种新的求解ULSI双介质互连电容的模拟电荷法

论述了一种模拟电荷法与镜像格林函数法相结合,对模拟电荷用DFP法进行最优设置的提取双介质ULSI互连电容参数的基本算法,并与其它互连电容模拟软件模拟的结果进行了比较,相对偏差小于10%,表明这种新的模拟电荷法是有效的和可行的．     

VLSI互连寄生电容准三维多极加速提取

随着VLSI向深亚微米发展,需要快速而精确地计算互连寄生电容以保证高性能电路设计的正确性.本文介绍一个单介质准三维电容提取软件.在位势理论建立的间接边界积分方程中,它在导体表面采用线电荷近似面电荷的思想简化3-D结构,并采用多极加速法进一步降低计算复杂度.由于既保留了三维形体的空间架构,又使大量电荷积分降为一维,取得了精度与速度的良好平衡.数值计算结果表明,其计算复杂性为O(n),n为边界元数.     

内导体偏置对矩形带状线电容影响的分析

本文提出了分析计算内导体偏置的矩形屏蔽带状线电容的部分模拟电荷法。电容计算值和实验结果吻合较好。此方法可通过增大级数项数来提高计算精度。     

开关电容网络Z域分析的回路电荷法

本文导出了一般开关电容支路的Z域电荷耦合模型,提出一种适用于多相开关电容网络Z域分析的回路电荷法。     

任意电压源输入下开关电容网络分析的回路电荷法

本文提出了一种适用于开关电容网络精确分析的回路电荷法。该网络包含电容、独立电压源,开关和零极子(nullors)。该方法适用于任意K相开关状态,能处理任意的连续时间和离散时间输入。用回路电荷法,还导出了用输入电压表示电容电压的精确表达式。     

一种用于提取超大规模集成电路电容的新型库查找法

提出了八种节点电容典型结构用以建立电容模型库,并阐明了这八种结构可以提取大多数VLSI互连线的电容参数,给出了这些结构的拟合公式.采用该库查找法计算的互连线电容结果与FastCap所得结果非常吻合.由于电容是直接代入拟合公式计算得到的,所以计算速度非常快.     

一种用于提取超大规模集成电路电容的新型库查找法

提出了八种节点电容典型结构用以建立电容模型库,并阐明了这八种结构可以提取大多数VLSI互连线的电容参数,给出了这些结构的拟合公式.采用该库查找法计算的互连线电容结果与FastCap所得结果非常吻合.由于电容是直接代入拟合公式计算得到的,所以计算速度非常快.     

基于全电荷格林函数的MEI方法在超高速集成电路互连线参数提取中的应用

本文提出了将全电荷格林函数用于测度不变方程（ＭＥＩ）法中，即将全电荷格林函数代替完全格林函数积分以求得测量函数从而决定测度不变方程．并以这种ＭＥＩ法计算了某些多导体互连线的分布电容矩阵．     

基于"有效电容"的耦合RC互连延时分析

本文在保证互连延时特性不变的基础上将两相邻耦合RC互连中的耦合电容和静态互连电路等效为一“有效电容”,并将其用于有源互连的Elmore延时计算。与传统的采用Miller电容的方法进行了比较,它不但提高了计算精度而且反映了延时随信号上升时间变化的规律。本文方法与Elmore延时具有相同的计算复杂度,可广泛用于考虑耦合电容的面向性能的布线优化。     

一种提取多层介质多导体互连电磁参数的快速算法：有限差分－不变性测试方程法

本文首次利用ＭＥＩ方法计算了多层介质多导体互连的电容和电感矩阵．由于引入了测试环的概念，避免了多层结构的格林函数的推导和Ｓｏｍｍｅｒｆｅｌｄ积分的计算，同时也去掉了传统ＭＥＩ方法中ＭＥＩ系数与几何形状有关的假设．计算结果表明：本文提出的算法正确，与常见的算法如矩量法，边界元法和有限元法等方法相比，计算速度大大加快，并且对结构的适应性强，可以分析截面为任意形状且导体有耗的互连，因此该方法是一种提取电磁参数的快速算法．在计算得到的电容和电感矩阵的基础上，本文还利用双重波形收敛法计算了端接非线性负载的多导体互连各端口的瞬态响应．     

Quantitative oxide charge determination by photocurrent analysis

A new method is presented for the quantitative determination of insulator charges Q_Is from photo induced diffusion currents. Q_Is is determined by analyzing the interface recombination of charge carriers in illuminated electrolyte/insulator/semiconductor structures. Measured characteristics are explained theoretically and an evaluation procedure is developed for the determination of Q_Is which is based on the comparison of the simulated with the experimental data. Q_Is values obtained from the proposed method are compared with those from capacitance voltage measurements. A very good agreement can be observed between the results of both methods.     

New signal readout method for ultrahigh-sensitivity CMOS image sensor

We propose a new signal readout method that uses a charge-transfer circuit. Its application is to an ultrahigh-sensitivity CMOS image sensor on which an avalanche-mode photoconductive film is overlaid. The charge-transfer circuit makes it possible to obtain high signal-to-noise ratio features by transferring signal charges accumulated in each photodiode to a parasitic capacitance that is small compared with the photodiode capacitance. A 138 /spl times/ 138 passive-pixel prototype sensor that had the charge-transfer circuit in each column was fabricated and tested. The prototype's column-to-column fixed-pattern noise and random noise were, respectively, 56.7 and 58.4 dB below the saturation signal level, which demonstrated its potential as a signal readout circuit for a next-generation ultrahigh-sensitivity CMOS image sensor.     

考虑填充哑元的有效三维互连电容提取与分析

向集成电路版图中填充金属哑元(dummy)可减少化学-机械抛光所产生的介质厚度差异,同时它也给传统的寄生电容提取工具带来性能上的巨大挑战.本文基于虚拟多介质加速的直接边界元法,提出一种有效处理含有哑元填充互连结构的三维电容提取算法.通过采用悬浮(floating)边界条件和有效的方程形成和求解方法,该算法在保持高精度的同时,速度比Raphael快几千倍、比文[5]中方法快十多倍.利用本文算法,还对含哑元结构进行了一系列试验,分析其对互连电容的影响,有助于集成电路的优化设计.     

多导体电容系统多端口表示方法

部分电容是工程电磁场课程的一个重要内容，是电气领域经常应用的重要知识。结合微分形式电荷守恒方程和等效电路模型获得了无损耗多导体电容系统部分电荷守恒方程；基于正弦稳态电路结点导纳法得到了用部分电容和支路电压表示的多端口库伏关系；以3+1多导体电容系统为例，讨论了多导体电容系统的部分电容、感应系数矩阵和电位系数矩阵对应元素关系。该教学思路在教学应用中更易被学生理解和接受。     

A novel experimental technique for the lateral profiling of oxideand interface state charges in hot-hole degraded n-MOSFETs

A new experimental technique, based on gate-to-drain capacitance C _gd^s and charge pumping (CP) current, is proposed for the lateral profiting of oxide and interface state charges in the LDD region of the n-MOSFETs. The device is injected with hot holes, which are subsequently removed by a low-level channel hot-electron stress. The degree of neutralization is monitored by C_gd^s until complete annihilation of trapped holes is realized. This allows the effects of oxide and interface state charges on CP characteristics to be clearly distinguished, and the spatial profiles of the two charges to be separately determined     

Weak inversion charge injection in analog MOS switches

The on-chip test circuit for examining the charge injection in analog MOS switches has been described in detail, and has been fabricated and characterized. Mixed-mode circuit and device simulations have been performed, creating excellent agreements not only with the experimental waveforms but also with the measured switch-induced error voltage. Further investigation of the experimental and simulated results has separated the charge injection into three distinct components: i) the channel charges in strong inversion; ii) the channel charges in weak inversion; and iii) the charges coupled through the gate-to-diffusion overlap capacitance. Important observations concerning the weak inversion charge injection have been drawn from the waveform of the current through the switched capacitor. In this work the channel charges in weak inversion have exhibited a 20% contribution to the switch-induced error voltage on a switched capacitor     

Negative capacitance and its photo-inhibition in organic bulk heterojunction devices

We report the dynamic admittance, both in the dark and under illumination, of heterojunctions made of poly(3-hexyl thiophene)/1-(3-methoxycarbonyl)propyl-1-phenyl[6,6]C₆₁ (P3HT:PCBM) blends, which are used in efficient organic solar cells. In the dark there appears a huge low frequency negative capacitance which we associate with slow electron hole bimolecular recombination at the heterojunction interfaces. Surprisingly, under photoexcitation the negative capacitance gradually disappears with increasing light intensity. We attribute this positive photoinduced capacitance to the combined effect of (1) long lived photogenerated charges at the P3HT:PCBM interfaces that increase electron-hole bimolecular recombination rate, which in turn renders the capacitance less negative and (2) trapped photogenerated charges that increase the capacitance upon re-emission.     

配电网直流定位法探测器的研究与实现

在配电网单相接地故障定位中,由于水泥杆接地故障的存在以及导线分布电容的影响,使得C行行波法和交流注入法不能有效定位。直流定位方法是在停电离线状态下,向故障相注入直流信号,然后手持直流信号检测器沿线路检测该直流信号,确定故障点的具体位置。文中对直流信号探测器的原理与组成进行了阐述,并对直流信号的注入进行了仿真。仿真结果表明,该方法是有效、可行的。